Abstract: A semiconductor device includes a plurality of memory cells connected to a match line; a word line driver connected to a word line; a valid cell configured to store a valid bit indicating valid or invalid of an entry; a first precharge circuit connected to one end of the match line and configured to precharge the match line to a high level; and a second precharge circuit connected to the other end of the match line and configured to precharge the match line to a high level. The plurality of memory cells are arranged between the first precharge circuit and the second precharge circuit, and the second precharge circuit is arranged between the word line driver and the plurality of memory cells.

Abstract: A semiconductor device includes first and second CPUs, first and second SPUs for controlling a snoop operation, a controller supporting ASIL D of a functional safety standard and a memory. The controller sets permission of the snoop operation to the first and second SPUs when a software lock-step is not performed. The controller sets prohibition of the snoop operation to the first and second SPUs when the software lock-step is performed. The first CPU executes a first software for the software lock-step, and writes an execution result in a first area for the memory. The second CPU executes a second software for the software lock-step, and writes an execution result in a second area of the memory. The execution result written in the first area is compared with the execution result written in the second area.

Abstract: To provide a semiconductor device with a digital-controlled DC-DC converter capable of stable feedback operation while minimizing area, the semiconductor device includes a DC-DC converter whose characteristic is determined by the control parameter, a flash memory and a processor that controls the flash memory, both of which operate at a power supply based on the output of the DC-DC converter. The control parameter is stored in the flash memory, and the control parameter is read out from the flash memory and set in the DC-DC converter by the processor while the DC-DC converter is operating.

Abstract: A manufacturing method of a semiconductor device includes: (a) forming a gate structure for a control gate electrode on a semiconductor substrate; (b) forming a charge storage film so as to cover a first side surface, a second side surface, and an upper surface of the gate structure; (c) forming a conductive film for a memory gate electrode on the charge storage film; (d) removing a part of the charge storage film and a part of the conductive film such that the charge storage film and the conductive film remain in this order on the first side surface and the second side surface of the gate structure, thereby forming the memory gate electrode; and (e) removing apart of the gate structure separate from the first side surface and the second side surface such that a part of the semiconductor substrate is exposed from the gate structure.

Abstract: A phase locking circuit includes: a phase comparator; a pulse generation circuit; a charge pump circuit; a loop filter circuit; and a voltage-controlled oscillator. The phase comparator samples a first level in synchronization with a received reference clock, and generates a first signal to be initialized to a second level that is different from the first level by using a feedback clock. The pulse generation circuit generates a second signal in accordance with the reference clock, and controls a phase of as output signal of the voltage-controlled oscillator to be the feedback clock to have a predetermined value by inputting the first signal and the second signal as a control voltage to the voltage-controlled oscillator through the charge pump circuit and the loop filter circuit.

Abstract: A circuit for use in frame filtering is disclosed. The circuit includes a plurality of comparator units. Each comparator unit configured, in response to receiving at least a part of a data frame, to perform a determination whether data in a portion of the at least part of the data frame matches respective reference data and to provide a result to a comparator unit output based on the determination. The circuit includes a crossbar switch having crossbar inputs coupled to respective comparator unit outputs and configured to provide sets of crossbar switch outputs via configurable interconnects; and a set of result-combining logic units, each result-combining logic unit coupled to a respective set of crossbar switch outputs, and configured to provide a respective logic unit output.

Abstract: An electronic device capable of reducing a process associated with a radar search is provided. The electronic device DEVa has a transmitting linear array antenna TXA, a receiving linear array antenna RXA, and a control circuit CTLU for controlling the transmitting linear array antenna TXA and the receiving linear array antenna RXA. The transmitting linear array antenna TXA includes a plurality of transmission antennas TXr[1] to TXr[4] arranged along the Z direction, and transmits a transmission wave. The receiving linear array antenna RXA includes a plurality of reception antennas RXr[1] to RXr[4] arranged along an X direction orthogonal to the Z direction, and receives a reflected wave of a transmission wave.

Abstract: Simulator includes a first core unit corresponding to the first simulation model, a second core unit corresponding to the second simulation model, a slave block unit for communicating with one of the first core unit and the second core unit, the first core unit and the second core unit and a simulation control unit for causing either to execute instructions. The first core unit includes a high-speed mode instruction execution control unit that stops executing subsequent instructions in response to a request for switching from the first simulation model to the second simulation model, and a transaction monitor unit that monitors whether or not the transaction processing between the first core unit and the slave block unit has been completed. The simulation control unit causes the second core unit to execute instructions in response to a notification of completion of the transaction processing from the transaction monitor unit.

Abstract: A semiconductor device has a timer unit and a processing unit. The timer unit includes a binary counter, a first converter that converts a first count value output from the binary counter to a gray code to output as first gray code data. The processing unit includes a first synchronizer that captures the first gray code data transferred from the timer unit in synchronization with the system clock signal and outputs the captured first gray code data as second gray code data, and a fault detection unit that generates a data for fault detection based on the first gray code data transferred from the timer unit and compares a second count value based on the second gray code data with a third counter value based on the data for fault detection.

Abstract: The present invention relates to a semiconductor device having a first processor element configured to receive a first interrupt request signal, a second processor element configured to receive a second interrupt request signal, a first priority determination circuit configured to receive a plurality of interrupt signals and to output the first interrupt request signal to the first processor element, a second priority determination circuit configured to receive the plurality of interrupt signals and to output the second interrupt request signal to the second processor element, a checker circuit configured detect failures of the first priority determination circuit and the second priority determination circuit, and a control circuit configured to select one of the first priority determination circuit or the second priority determination circuit as a circuit to be checked. The control circuit selects the circuit to be checked based on the first interrupt request signal and the second interrupt request signal.

Abstract: A gate electrode is formed on a semiconductor substrate between an n-type source region and an n-type drain region via a first insulating film. The first insulating film has second and third insulating films adjacent to each other in a plan view and, in a gate length direction of the gate electrode, the second insulating film is located on an n-type source region side, and the third insulating film is located on an n-type drain region side. The second insulating film is thinner than the third insulating film. The third insulating film is made of a laminated film having a first insulating film on the semiconductor substrate, a second insulating film on the first insulating film, and a third insulating film on the second insulating film, and each bandgap of the three insulating films is larger than that of the second insulating film.

Abstract: A microcontroller includes a CPU and a cryptographic circuit, and when a first program uses the cryptographic circuit, the second program transmits installation information of the first program and encrypted program installation information to the cryptographic circuit. The cryptographic circuit decrypts the encrypted program installation information and compares it with the installation information of the first program. In the case of match, the use of the cryptographic circuit by the first program is permitted.

Abstract: To provide a memory protection circuit and a memory protection method suitable for quick data transfer between a plurality of virtual machines via a common memory, according to an embodiment, a memory protection circuit includes a first ID storing register that stores therein an ID of any of a plurality of virtual machines managed by a hypervisor, an access determination circuit that permits the virtual machine having the ID stored in the first ID storing register to access a memory, a second ID storing register that stores therein an ID of any of the virtual machines, and an ID update control circuit that permits the virtual machine having the ID stored in the second ID storing register to rewrite the ID stored in the first ID storing register.

Abstract: In the conventional semiconductor device, it is impossible for two CPUs to operate memories to be debugged at synchronous timings. According to one embodiment, the operation verifying program analyzes the operation verifying command received by the first semiconductor device 10 from the external device 31 by its own device (S32), transfers the operation verifying command to the second semiconductor device 20 (S31, S41), also analyzes the operation verifying command in the second semiconductor device 20 (S42), outputs the trigger signal (S34, S44) to the first semiconductor device 10 from the second semiconductor device 20 based on the result of the analysis, writes the memory setting values included in the operation verifying command to the memories in the respective semiconductor device (S35, S45) based on the trigger signal, and restarts the device operation based on the written memory setting values.

Abstract: It is an object of the present invention to provide a technique for reducing the variation of a bias voltage. An analog-to-digital converter comprises a comparator including a first amplifier and a second amplifier inputted one output of the first amplifier. The first amplifier is a differential type of amplifier, and includes one input terminal for receiving a signal and the other input terminal for receiving a reference signal which changes with a predetermined slope. The second amplifier is a single-ended type amplifier, and determines an auto zero voltage based on the amplified voltage by an auto zero operation of the first amplifier and includes a self-bias circuit using the auto zero voltage as a bias voltage. The comparator is plural, the comparators are plurality which arranged in a row direction, and outputs a digital value based on an analog voltage inputted to the other input terminal in parallel operation.

Abstract: A semiconductor device that can reduce power consumption while improving the accuracy of learning and inference is provided. The semiconductor device is connected to data lines PBL, NBL, and comprises a product operation memory cell 1 for storing data of ternary value and performing a product-sum operation between a stored data and an input data INP and a data in the data lines PBL, NBL.

Abstract: A semiconductor device includes a transmission control unit which performs transmission processing, an area determination unit which determines whether an own vehicle is located in an intersection area, and an operation mode determination unit which determines either a control mode or a terminal mode as an operation mode of a radio terminal device based on an identification information for identifying a source of a received communication frame, and a determination result by the area determination unit. When the operation mode is determined to be the control mode, the transmission control unit outputs, as transmission data, a communication frame including generated control information. When the operation mode is determined to be the terminal mode, the transmission control unit outputs transmission data in synchronization with the received communication frame.

Abstract: A solid-state imaging device capable of suppressing variations in reference voltages and improving performance of reference voltages is provided. According to one embodiment, the solid-state imaging device includes a pixel outputting a luminance signal voltage corresponding to an amount of incident light, reference voltages, a reference voltage generation circuit outputting a ramp signal and an inverse ramp signal, and an AD converter, and the AD converter includes a comparator including an amplifier coupled to one input terminal, a reference voltage and an input terminal coupled to each of the ramp signals via a capacitor, and an input terminal coupled to each of the reference voltage and the ramp signal via a capacitor, and a ramp current cancel circuit coupled to each of the reference voltages via a cancel capacitor.

Abstract: To realize a low power consumption and a small area of a network communication system and a semiconductor device for mounting the same. In the processing method of the network router or network communication frame, the received frame is input to the hash generator, to obtain an address based on the resulting hash value, the position of the address in the rule table, stores the rule corresponding to the received frame.

Abstract: A semiconductor device includes a clock generating circuit and a jitter measurement circuit. The clock generating circuit is input with a control value for changing a cycle of the clock thereof. The jitter measurement circuit has a first logic circuit operated with using an output clock of the clock generating circuit as an input and a first delay element, and is configured to output the presence/absence of a jitter of the clock generating circuit.