Abstract: A wrist endoprosthesis (2) for functional replacement of the human wrist, containing a radius component (4) that has a shaft (10) for anchoring in the radius, a head (12), and a first joint surface (16), which is implemented on a distal head face (14), and a carpal component (6) that has a proximal carpal face (22), a distal carpal face (20) and a second joint surface (24) which is formed on the proximal carpal face (22) and interacts with the first joint surface (169) of the radius component (4), characterized in that the carpal component (6) is substantially trough-shaped, in order to at least partially surround the carpal bones. Also, a wrist endoprosthesis (2) that has anti-luxation protection (8), a method for producing wrist endoprostheses (2) and a computer program product.

Abstract: A method for producing a bonded joint between a light metal of a first component and a steel material of a second component, wherein a protective-gas joining process is used, a zinc-based filler material is used, and wherein an arc of the protective-gas joining process reaches at least the steel material of the second component, wherein a phase space of at least intermetallic phase composed of iron and the light metal is produced in a joining region adjacent to the steel material. Introduction of heat occurs so that the joint to the steel material is a solder or brazed connection and, during joining, a detachment of part of the solidified intermetallic phase(s) from the steel material of the second component starts in a melt of a solder or brazed matrix formed by the filler material and the at least one intermetallic phase is embedded in the solder matrix.

Abstract: A method for reading out a memory element comprises a series connection. of at least two memory cells A and B each have a stable state A0 or B0 having higher resistance and a stable state A1 or B1 having lower electrical resistance. An electrical variable of the series circuit is measured and an electrical variable is selected for this measurement, to which the memory cell A in state A0 makes a different contribution than the memory cell B in state B0 and/or to which the memory cell A instate A1 makes a different contribution than the memory cell B in state B1. The two state combinations A1 and B0 or A0 and B1 then result in differing values for the electrical variable that is measured by way of the series circuit. These state combinations can thus be distinguished from each other without having to change the logic state of the memory element during reading.