Abstract: An off-line tool for breaking in pad conditioning disks used in a chemical mechanical polishing (CMP) system. The off-line tool comprises a platen having a first surface for holding a polishing pad and a motor for rotating the polishing pad. The motor is coupled to the platen via a first drive shaft. The off-line tool further comprises a mechanical drive assembly for holding a second drive shaft in a position proximate the first surface of the platen and a first break-in head removably attached to the second drive shaft. The first break-in head receives a first pad conditioning disk and the second drive shaft moves the first break-in head toward the platen, thereby pressing the first pad conditioning disk against the polishing pad on the platen.

Abstract: An apparatus for breaking in new pad conditioning disks for use in a chemical mechanical polishing (CMP) system that polishes a semiconductor wafer by pressing the semiconductor wafer against a moving polishing pad. The apparatus comprises a break-in head that is removably attached to a drive shaft to which a polishing head that holds the semiconductor wafer is normally attached. The break-in head holds multiple pad conditioning disks and presses the plurality of pad conditioning disks against the moving polishing pad. The break-in head comprises a drive mechanism for rotating the multiple pad conditioning disks. The drive mechanism is coupled to the drive shaft and rotates the multiple pad conditioning disks by translating a rotating motion of the drive shaft into rotating motions of the multiple pad conditioning disks.

Abstract: Various embodiments of an apparatus for holding and processing semiconductor workpieces are provided. In one aspect, an apparatus is provided that includes a first base, a second base and three elongated members coupled to and between the first base and the second base. The three elongated members are spatially arranged so that a semiconductor workpiece may be positioned therebetween. Each of the elongated members has a first lateral edge, a second lateral edge and at least one radially inwardly projecting member. The at least one radially inwardly projecting member has a third lateral edge, a fourth lateral edge and an upper surface for receiving a portion of the semiconductor workpiece and a lower surface. The third lateral edge is displaced laterally inward from the first lateral edge and the fourth lateral edge is displaced laterally inward from the second lateral edge.

Abstract: Various embodiments of a semiconductor processing fluid delivery system and a method delivering a semiconductor processing fluid are provided. In aspect, a system for delivering a liquid for performing a process is provided that includes a first flow controller that has a first fluid input coupled to a first source of fluid and a second flow controller that has a second fluid input coupled to a second source of fluid. A controller is provided for generating an output signal to and thereby controlling discharges from the first and second flow controllers. A variable resistor is coupled between an output of the controller and an input of the second flow controller whereby the output signal of the controller and the resistance of the variable resistor may be selected to selectively control discharge of fluid from the first and second flow controllers.

Abstract: Various embodiments of a semiconductor processing fluid delivery system and a method delivering a semiconductor processing fluid are provided. In aspect, a system for delivering a liquid for performing a process is provided that includes a first flow controller that has a first fluid input coupled to a first source of fluid and a second flow controller that has a second fluid input coupled to a second source of fluid. A controller is provided for generating an output signal to and thereby controlling discharges from the first and second flow controllers. A variable resistor is coupled between an output of the controller and an input of the second flow controller whereby the output signal of the controller and the resistance of the variable resistor may be selected to selectively control discharge of fluid from the first and second flow controllers.

Abstract: Various embodiments of an apparatus for holding and processing semiconductor workpieces are provided. In one aspect, an apparatus is provided that includes a first base, a second base and three elongated members coupled to and between the first base and the second base. The three elongated members are spatially arranged so that a semiconductor workpiece may be positioned therebetween. Each of the elongated members has a first lateral edge, a second lateral edge and at least one radially inwardly projecting member. The at least one radially inwardly projecting member has a third lateral edge, a fourth lateral edge and an upper surface for receiving a portion of the semiconductor workpiece and a lower surface. The third lateral edge is displaced laterally inward from the first lateral edge and the fourth lateral edge is displaced laterally inward from the second lateral edge.

Abstract: Various methods are provided of forming capacitor electrodes for integrated circuit memory cells in which out-diffusion of dopant from doped silicon layers is controlled by deposition of barrier layers, such as layers of undoped silicon and/or oxide. In one aspect, a method of forming hemispherical grain silicon on a substrate is provided that includes forming a first doped silicon layer on the substrate and a first barrier layer on the doped silicon layer. A hemispherical grain polysilicon source layer is formed on the first barrier layer and a hemispherical grain silicon layer on the hemispherical grain polysilicon source layer. By controlling out-diffusion of dopant, HSG grain size, density and uniformity, as well as DRAM memory cell capacitance, may be enhanced, while at the same time maintaining reactor throughput.

Abstract: Various embodiments of a plasma coil, methods of making the same, a processing apparatus utilizing plasma processes and methods of manufacture are disclosed. In one aspect, a plasma coil is provided that includes a first conductor coil that has a plurality of turns. An innermost of the plurality of turns terminates to define a central void portion and an outermost of the plurality of turns defines a peripheral portion. A first conductor plate is positioned in the central void portion of and coupled in series to the first conductor coil. The conductor plate provides a more uniform and intense electrical field in order to retard residue formation on plasma chamber windows.

Abstract: Various embodiments of a plasma coil, methods of making the same, a processing apparatus utilizing plasma processes and methods of manufacture are disclosed. In one aspect, a plasma coil is provided that includes a first conductor coil that has a plurality of turns. An innermost of the plurality of turns terminates to define a central void portion and an outermost of the plurality of turns defines a peripheral portion. A first conductor plate is positioned in the central void portion of and coupled in series to the first conductor coil. The conductor plate provides a more uniform and intense electrical field in order to retard residue formation on plasma chamber windows.

Abstract: Various methods of fabricating circuit devices are provided. In one aspect, a method of fabricating a circuit device on a substrate is provided. The method includes forming a doped silicon structure on the substrate and forming a hemispherical grain silicon film on the silicon structure. The substrate is heated from a first temperature to a second temperature while undergoing exposure to a dopant gas to add a dopant to the hemispherical grain silicon film. The method provides for improved capacitor electrode fabrication via concurrent gas exposure and substrate temperature ramp-up. In this way, dopant gas is introduced before the doped silicon structure transitions from an amorphous state to a polycrystalline state.

Abstract: An auxiliary device for filter exchange in an air filtering system of a clean room for allowing easy exchange of the filter used in the clean room. The auxiliary device for filter exchange may include a block plate having a width to be inserted through a filter frame extended downwardly toward the inside of a production line and equipped with a filter thereon; a support for supporting the bottom of the block plate and facing with the inside wall of the filter frame keeping a constant distance between them; and a tube having an air passage and installed to closely adhere to the filter frame along the circumference of the support for sealing. Adjustable seal inserts (such as corner-shaped inserts) may be provided for auxiliary or additional sealing effect, for example, at corners of a filter frame. A pressure indicator may also be provided for monitoring correct inflation of the tube.

Abstract: Methods and apparatus for chemical mechanical polishing of substrates, such as semiconductor wafers, which employ retaining rings to hold a substrate in place during the polishing process. The retaining rings have surface characteristics that may be used to improve polishing uniformity, especially at a wafer periphery, and/or to improve removal rate of a chemical mechanical polishing (“CMP”) system. The surface characteristics may be recesses and/or protrusions on the pad-facing surface of a CMP retaining ring, which during polishing contact and act to flatten a CMP polishing pad beneath the substrate. Near the edge the surface characteristics may also condition the surface of a polishing pad during polishing and may be further configured to improve slurry transport.