Patents Assigned to Sanken Electric Co, Ltd.
  • Patent number: 11398828
    Abstract: An analog-to-digital converter that converts an inputted analog signal into a digital value is disclosed that may include unit circuits that each generate reference voltages comprising regular potential intervals by a series resistor circuit connected between a high potential side reference voltage and a low potential side reference voltage and convert the reference voltages into a digital value by comparing the reference voltages with the inputted analog signal, and an adder that adds the digital values converted by the unit circuits. Each unit circuit may include coupling switches that couple the series resistor circuit with the series resistor circuit of another one of the unit circuits and connect the series resistor circuits between the high potential side reference voltage and the low potential side reference voltage and a sharing switch that shares the inputted analog signal with the other unit circuit that is coupled with the series resistor circuit.
    Type: Grant
    Filed: March 23, 2021
    Date of Patent: July 26, 2022
    Assignee: SANKEN ELECTRIC CO., LTD.
    Inventor: Hideki Hayashi
  • Publication number: 20220223729
    Abstract: A semiconductor device is disclosed that includes a group of trenches positioned in active region inside a first semiconductor region. A first trench is positioned in an outer peripheral region on an outer side of an active region. A second trench is positioned on an outer side of the first trench positioned in the outer peripheral region on the outer side of the active region. A mesa portion is positioned between the first and the second trenches. An insulating layer is positioned inside the first and second trenches. A second field plate is positioned inside the insulating layer in the first trench. A third field plate positioned inside the second insulating layer in the second trench. The mesa portion includes the semiconductor region electrically coupled to the first main electrode on an outermost side. The first trench does not have the gate electrode at upper part of the first trench.
    Type: Application
    Filed: January 12, 2021
    Publication date: July 14, 2022
    Applicants: SANKEN ELECTRIC CO., LTD., Allegro MicroSystems, LLC
    Inventor: Taro KONDO
  • Publication number: 20220216782
    Abstract: A power conversion device according to an embodiment may include: an output circuit configured to perform a power conversion operation of converting input power into an output power and outputting the output power; and a microcomputer configured to control the power conversion operation by the output circuit with power supplied from an internal power source of the output circuit, wherein the microcomputer outputs a status signal notifying whether the microcomputer is in a power shutdown permit period or a power shutdown inhibit period, and the output circuit includes a power supply stop circuit configured, when receiving the operation stop signal that instructs to stop the power conversion operation, to stop the power supply from the internal power source to the microcomputer on a condition where the status signal indicates that the microcomputer is in the power shutdown permit period.
    Type: Application
    Filed: March 25, 2022
    Publication date: July 7, 2022
    Applicant: SANKEN ELECTRIC CO., LTD.
    Inventors: Junichi TAKADA, Toshihiro NAKANO
  • Publication number: 20220216310
    Abstract: A semiconductor device is disclosed including a sub-layer with first conductivity type, a drift layer with first conductivity type, a base region with second conductivity type positioned on the drift layer, a source region in contact with the base region, a source electrode, a plurality of trenches, at least one of the trenches in contact with the drift layer, the base region, and the source region, a plurality of insulating regions, at least one of the insulating regions positioned inside of each trench, a plurality of gate electrodes, at least one of the gate electrodes positioned inside of each trench; and a plurality of field plates, at least one of the field plates electrically connected to the source electrode and positioned in the insulating region in the trench. The field plate comprises high-resistance polysilicon.
    Type: Application
    Filed: March 23, 2022
    Publication date: July 7, 2022
    Applicants: SANKEN ELECTRIC CO., LTD., Allegro MicroSystems, LLC
    Inventor: Taro KONDO
  • Publication number: 20220200458
    Abstract: A DC-DC converter according to one or more embodiments is disclosed that may include: a drive voltage switching circuit of a drive circuit that drives a synchronous rectification MOS transistor. The drive voltage switching circuit may switch a connection so that the drive circuit supplies power from the output voltage to the drive circuit in response to the drive voltage for supplying power to the drive circuit being set to be lower than the output voltage. The drive voltage switching circuit may switch a connection so that the drive circuit supplies power from the drive voltage in response to the drive voltage for supplying power to the drive circuit being set to be higher than the output voltage.
    Type: Application
    Filed: September 28, 2021
    Publication date: June 23, 2022
    Applicant: SANKEN ELECTRIC CO., LTD.
    Inventors: Masaru NAKAMURA, Shinji ASO, Jianao YAO
  • Publication number: 20220179719
    Abstract: An event processing method of a processor according to one or more embodiments may include detecting an event input, which notifies an occurrence of an event, detecting a wait event by an event input, changing a status from an execution status to a wait status and outputs a count start signal by an event wait instruction, and changes a status from the wait status to the execution status and outputs a count end signal by the detection of the wait event, incrementing a counter value from an initial value by output of the count start signal, and ends counting by output of the count end signal; and receiving and storing a count value of the timer counter by output of the count end signal.
    Type: Application
    Filed: February 24, 2022
    Publication date: June 9, 2022
    Applicant: SANKEN ELECTRIC CO., LTD.
    Inventors: Hitomi SHISHIDO, Daeun LEE, Kazuhiro MIMA
  • Publication number: 20220149852
    Abstract: An analog-to-digital converter according to one or more embodiments is disclosed that converts an analog input to a digital converted value by repeating a conversion data generation operation by a conversion data generator, a potential generation operation by a capacitance DAC, and a comparison operation by a comparator for a resolution bit, the analog-to-digital converter. a comparator operation signal generation circuit predicts the time when a potential generated by the capacitance DAC becomes settled based on a charging or discharging time to a capacitance element whose characteristics are equal to those of the capacitance used in the capacitance DAC, and generates a comparator operation signal to allow the comparator to start the comparison operation.
    Type: Application
    Filed: September 29, 2021
    Publication date: May 12, 2022
    Applicant: SANKEN ELECTRIC CO., LTD.
    Inventor: Hideki HAYASHI
  • Publication number: 20220149853
    Abstract: One or more embodiments of a successive approximation type analog-to-digital converter that converts an analog input into a digital conversion value and outputs the digital conversion value, may include: a capacitance DAC that generates a bit-by-bit potential based on an analog input; a comparator that compares the potential generated by the capacitance DAC, wherein the comparator is a memory cell rewriting type, the comparator includes a first stage current mirror type operational amplifier; and a second stage memory cell; a conversion data generator that generates conversion data of resolution bits based on a comparison result of the comparator; and a correction circuit that corrects an output error of the conversion data caused by an offset error of the comparator by adding or subtracting an offset correction value that is a fixed value, and outputs the conversion data as a digital conversion value.
    Type: Application
    Filed: September 29, 2021
    Publication date: May 12, 2022
    Applicant: SANKEN ELECTRIC CO., LTD.
    Inventor: Hideki HAYASHI
  • Publication number: 20220123761
    Abstract: An analog-digital conversion circuit is disclosed for comparing a comparison potential with a reference potential generated based on a reference power supply to convert a comparison potential to a digital value. An analog-to-digital converter generates the comparison potential based on a sampled and held input potential, the digital value, and the reference power supply. A current amount control unit controls current amount flowing to the current amount control element in each bit circuit. In response to second switches of the bit circuits being turned on in order from the upper bit in each bit circuit by the digital value, the current amount control unit applies a current control potential to the current amount control element in any of the bit circuits that the noise current is more than allowable value while the noise current proportional to the charge flowing from the capacitor is more than the allowable value.
    Type: Application
    Filed: December 28, 2021
    Publication date: April 21, 2022
    Applicant: SANKEN ELECTRIC CO., LTD.
    Inventor: Hideki Hayashi
  • Publication number: 20220093727
    Abstract: A semiconductor device is disclosed including a sub-layer with first conductivity type, a drift layer with first conductivity type, a base region with second conductivity type positioned on the drift layer, a source region in contact with the base region, a source electrode, a plurality of trenches, at least one of the trenches in contact with the drift layer, the base region, and the source region, a plurality of insulating regions, at least one of the insulating regions positioned inside of each trench, a plurality of gate electrodes, at least one of the gate electrodes positioned inside of each trench; and a plurality of field plates, at least one of the field plates electrically connected to the source electrode and positioned in the insulating region in the trench. The field plate comprises high-resistance polysilicon.
    Type: Application
    Filed: February 1, 2021
    Publication date: March 24, 2022
    Applicants: SANKEN ELECTRIC CO., LTD., Allegro MicroSystems, LLC
    Inventor: Taro KONDO
  • Patent number: 11243587
    Abstract: A data processing device according to one or more embodiment is disclosed. The data processing device may include a first power-on reset circuit that generates a first power-on reset signal depending on power source voltage, and a processor that activates based on a first power-on reset signal generated by the first power-on reset circuit and that runs software. The processor determines if the normal first power-on reset signal is used to cause the processor to activate and run the software.
    Type: Grant
    Filed: June 26, 2019
    Date of Patent: February 8, 2022
    Assignee: SANKEN ELECTRIC CO., LTD.
    Inventor: Takanaga Yamazaki
  • Patent number: 11244929
    Abstract: A light emitting device (1) includes: three or more light emitting units (10, 20, 30) that individually include blue light emitting element, a wavelength range of the blue light emitting element accommodated in respective packages being different from each other. The light emitting device mixes output lights from the light emitting units (10, 20, 30) to output white light of a predetermined chromaticity. In an xy chromaticity diagram, the chromaticity of the output light from each of light emitting units (10, 20, 30) is located at a distance from the predetermined chromaticity. The difference between the chromaticity of the output light from each of the light emitting units (10, 20, 30) and the predetermined chromaticity is not greater than 0.04.
    Type: Grant
    Filed: October 30, 2017
    Date of Patent: February 8, 2022
    Assignee: Sanken Electric Co., Ltd.
    Inventors: Takaya Ueno, Hitoshi Murofushi
  • Patent number: 11245006
    Abstract: A trench semiconductor device includes a layer of semiconductor material, an exterior trench pattern formed in the layer of semiconductor material, and an interior trench pattern formed in the layer of semiconductor material, at least partially surrounded by the exterior trench pattern. The exterior trench pattern includes a plurality of exterior trench portions that are each lined with dielectric material and filled with conductive material, and the interior trench pattern includes a plurality of interior trench portions that are each lined with dielectric material and filled with conductive material.
    Type: Grant
    Filed: December 23, 2019
    Date of Patent: February 8, 2022
    Assignees: Polar Semiconductor, LLC, SANKEN ELECTRIC CO., LTD.
    Inventors: Dosi Dosev, Don Rankila, Tatsuya Kamimura, Shunsuke Fukunaga, Steven L. Kosier, Peter West
  • Publication number: 20210294609
    Abstract: A pipeline processing unit includes a fetch unit that fetches the instruction for the thread having an execution right, a decoding unit that decodes the instruction fetched by the fetch unit, and a computation execution unit that executes the instruction decoded by the decoding unit. When the WAIT instruction for the thread having the execution right is executed, an instruction holding unit holds instruction fetch information on a processing target instruction to be processed immediately after the WAIT instruction. An execution target thread selection unit selects a thread to be executed based on a wait command and, in response to a wait state started from the execution of the WAIT instruction being canceled, processes the processing target instruction from decoding thereof based on the instruction fetch information on the processing target instruction held in the instruction holding unit.
    Type: Application
    Filed: June 10, 2021
    Publication date: September 23, 2021
    Applicant: SANKEN ELECTRIC CO., LTD.
    Inventors: Kazuhiro MIMA, Hitomi SHISHIDO
  • Publication number: 20210225814
    Abstract: A light emitting device (1) includes: three or more light emitting units (10, 20, 30) that individually include blue light emitting element, a wavelength range of the blue light emitting element accommodated in respective packages being different from each other. The light emitting device mixes output lights from the light emitting units (10, 20, 30) to output white light of a predetermined chromaticity. In an xy chromaticity diagram, the chromaticity of the output light from each of light emitting units (10, 20, 30) is located at a distance from the predetermined chromaticity. The difference between the chromaticity of the output light from each of the light emitting units (10, 20, 30) and the predetermined chromaticity is not greater than 0.04.
    Type: Application
    Filed: October 30, 2017
    Publication date: July 22, 2021
    Applicant: Sanken Electric Co., Ltd.
    Inventors: Takaya UENO, Hitoshi MUROFUSHI
  • Publication number: 20210211136
    Abstract: An analog-to-digital converter that converts an inputted analog signal into a digital value is disclosed that may include unit circuits that each generate reference voltages comprising regular potential intervals by a series resistor circuit connected between a high potential side reference voltage and a low potential side reference voltage and convert the reference voltages into a digital value by comparing the reference voltages with the inputted analog signal, and an adder that adds the digital values converted by the unit circuits. Each unit circuit may include coupling switches that couple the series resistor circuit with the series resistor circuit of another one of the unit circuits and connect the series resistor circuits between the high potential side reference voltage and the low potential side reference voltage and a sharing switch that shares the inputted analog signal with the other unit circuit that is coupled with the series resistor circuit.
    Type: Application
    Filed: March 23, 2021
    Publication date: July 8, 2021
    Applicant: SANKEN ELECTRIC CO., LTD.
    Inventor: Hideki HAYASHI
  • Publication number: 20210151597
    Abstract: A SJ power MOSFET having a super junction structure includes a P? pillar layer buried in a drift layer as an N? pillar layer and including a P pillar upper layer and a P pillar lower layer, wherein the P? pillar layer is configured to fulfill the relationships: Db>Da and Ca>Cb, where Da is a defect density of the P pillar upper layer, Ca is an impurity concentration of the P pillar upper layer, Db is a defect density of the P pillar lower layer, and Cb is an impurity concentration of the P pillar lower layer, so as to achieve a higher switching speed and ensure higher breakdown stability.
    Type: Application
    Filed: May 22, 2018
    Publication date: May 20, 2021
    Applicant: Sanken Electric Co., Ltd.
    Inventor: Yuji TASAKI
  • Publication number: 20210151590
    Abstract: A semiconductor device according to one or more embodiments may include a first semiconductor region of a first conductivity type, a second semiconductor region of the first conductivity type with a higher impurity concentration than an impurity concentration of the first semiconductor region, the second semiconductor region being provided on a first principal surface of the first semiconductor region, a third semiconductor region of a second conductivity type provided on an upper surface of the second semiconductor region, the third semiconductor region being doped with an impurity in accordance with an impurity concentration profile including peaks along a film thickness direction, a fourth semiconductor region of the first conductivity type provided on an upper surface of the third semiconductor region.
    Type: Application
    Filed: January 28, 2021
    Publication date: May 20, 2021
    Applicant: SANKEN ELECTRIC CO., LTD.
    Inventor: Yuuichi OSHINO
  • Patent number: 11011512
    Abstract: A semiconductor device, comprising a nitride semiconductor layer, a switching element, and a driving transistor; the switching element comprises: a first portion of a first electrode formed on the nitride semiconductor layer; a second electrode formed on the nitride semiconductor layer; and a first control electrode formed on the nitride semiconductor layer and located between the first portion of the first electrode and the second electrode; the driving transistor comprises: a second portion of the first electrode formed on the nitride semiconductor layer and connecting the first portions of the adjacent first electrodes to each other; a third electrode formed on the nitride semiconductor layer and transmitting a signal to the first control electrode; and a second control electrode formed on the nitride semiconductor layer and located between the second portion of the first electrode and the third electrode.
    Type: Grant
    Filed: September 15, 2017
    Date of Patent: May 18, 2021
    Assignee: SANKEN ELECTRIC CO., LTD.
    Inventors: Osamu Machida, Yasushi Tasaka
  • Publication number: 20210124635
    Abstract: A multicore system according to one or more embodiments is disclosed, which may include processors that execute processing different from each other, a selector that selects one of the processors, a checker processor, a comparator that compares an external state of the processor selected by the selector with an external state of the checker processor, or compares an internal state of the processor selected by the selector with an internal state of the checker processor, and a controller that determines that the selected processor or the checker processor is abnormal in response to the external states or the internal states doing not match each other based on comparison results obtained by the comparator.
    Type: Application
    Filed: January 5, 2021
    Publication date: April 29, 2021
    Applicant: SANKEN ELECTRIC CO., LTD.
    Inventor: Takanaga YAMAZAKI