Abstract: A light emitting device (1) includes: three or more light emitting units (10, 20, 30) that individually include blue light emitting element, a wavelength range of the blue light emitting element accommodated in respective packages being different from each other. The light emitting device mixes output lights from the light emitting units (10, 20, 30) to output white light of a predetermined chromaticity. In an xy chromaticity diagram, the chromaticity of the output light from each of light emitting units (10, 20, 30) is located at a distance from the predetermined chromaticity. The difference between the chromaticity of the output light from each of the light emitting units (10, 20, 30) and the predetermined chromaticity is not greater than 0.04.
Abstract: An analog-to-digital converter that converts an inputted analog signal into a digital value is disclosed that may include unit circuits that each generate reference voltages comprising regular potential intervals by a series resistor circuit connected between a high potential side reference voltage and a low potential side reference voltage and convert the reference voltages into a digital value by comparing the reference voltages with the inputted analog signal, and an adder that adds the digital values converted by the unit circuits. Each unit circuit may include coupling switches that couple the series resistor circuit with the series resistor circuit of another one of the unit circuits and connect the series resistor circuits between the high potential side reference voltage and the low potential side reference voltage and a sharing switch that shares the inputted analog signal with the other unit circuit that is coupled with the series resistor circuit.
Abstract: A SJ power MOSFET having a super junction structure includes a P? pillar layer buried in a drift layer as an N? pillar layer and including a P pillar upper layer and a P pillar lower layer, wherein the P? pillar layer is configured to fulfill the relationships: Db>Da and Ca>Cb, where Da is a defect density of the P pillar upper layer, Ca is an impurity concentration of the P pillar upper layer, Db is a defect density of the P pillar lower layer, and Cb is an impurity concentration of the P pillar lower layer, so as to achieve a higher switching speed and ensure higher breakdown stability.
Abstract: A semiconductor device according to one or more embodiments may include a first semiconductor region of a first conductivity type, a second semiconductor region of the first conductivity type with a higher impurity concentration than an impurity concentration of the first semiconductor region, the second semiconductor region being provided on a first principal surface of the first semiconductor region, a third semiconductor region of a second conductivity type provided on an upper surface of the second semiconductor region, the third semiconductor region being doped with an impurity in accordance with an impurity concentration profile including peaks along a film thickness direction, a fourth semiconductor region of the first conductivity type provided on an upper surface of the third semiconductor region.
Abstract: A semiconductor device, comprising a nitride semiconductor layer, a switching element, and a driving transistor; the switching element comprises: a first portion of a first electrode formed on the nitride semiconductor layer; a second electrode formed on the nitride semiconductor layer; and a first control electrode formed on the nitride semiconductor layer and located between the first portion of the first electrode and the second electrode; the driving transistor comprises: a second portion of the first electrode formed on the nitride semiconductor layer and connecting the first portions of the adjacent first electrodes to each other; a third electrode formed on the nitride semiconductor layer and transmitting a signal to the first control electrode; and a second control electrode formed on the nitride semiconductor layer and located between the second portion of the first electrode and the third electrode.
Abstract: A multicore system according to one or more embodiments is disclosed, which may include processors that execute processing different from each other, a selector that selects one of the processors, a checker processor, a comparator that compares an external state of the processor selected by the selector with an external state of the checker processor, or compares an internal state of the processor selected by the selector with an internal state of the checker processor, and a controller that determines that the selected processor or the checker processor is abnormal in response to the external states or the internal states doing not match each other based on comparison results obtained by the comparator.
Abstract: A semiconductor device includes: a semiconductor base; a trench insulating film which is provided on the inner wall surface of a trench formed from the upper surface of the semiconductor base in a film thickness direction of the semiconductor base and including a charged region which is charged positively; and a gate electrode provided on the trench insulating film within the trench. The positive charge density of the charged region at least in a side part of an outer region of the trench insulating film which is provided on the side surface of the trench is higher than that of an inner region of the trench insulating film which is opposite to the outer region, the outer region being in contact with the semiconductor base.
Abstract: Apparatus and associated methods relate to a bond-pad structure having small pad-substrate capacitance for use in high-voltage MOSFETs. The bond-pad structure includes upper and lower polysilicon plates interposed between a metal bonding pad and an underlying semiconductor substrate. The lower polysilicon plate is encapsulated in dielectric materials, thereby rendering it floating. The upper polysilicon plate is conductively coupled to a source of the high-voltage MOSFET. A perimeter of the metal bonding pad is substantially circumscribed, as viewed from a plan view perspective, by a perimeter of the upper polysilicon plate. A perimeter of the upper polysilicon plate is substantially circumscribed, as viewed from the plan view perspective, by a perimeter of the lower polysilicon plate. In some embodiments, the metal bonding pad is conductively coupled to a gate of the high-voltage MOSFET. The pad-substrate capacitance is advantageously made small by this bond-pad structure.
September 13, 2017
Date of Patent:
January 19, 2021
Polar Semiconductor, LLC, Sanken Electric Co., Ltd.
Peter West, Dosi Dosev, Don Rankila, Tatsuya Kamimura, Steve Kosier
Abstract: A semiconductor device includes: a semiconductor base 10 in which a first trench 101 is formed in a mesh-like shape in a plan view and a second trench 102 is formed in a mesh opening surrounded by the first trench 101; a first semiconductor element 1 which is formed in the semiconductor base 10 and includes a first gate electrode 81 provided within the first trench 101; and a second semiconductor element 2 which is formed in the semiconductor base 10 and includes a second gate electrode 82 provided within the second trench 102 surrounded by the first gate electrode 81.
Abstract: A power conversion device according to one or more embodiments may include: a microcomputer; and an output circuit controlled by the microcomputer, including an output unit that converts an input power into a predetermined power and outputs the predetermined power, an internal power source that supplies a power source to the microcomputer, a driver that drives the output unit by a signal from the microcomputer, and a microcomputer stop transition unit that, when an operation of the power conversion device is stopped, outputs a microcomputer stop signal to the microcomputer and causes an operation of the microcomputer to transition to a stop state. In one or more embodiments, after the microcomputer stop transition unit causes the operation of the microcomputer to transition to a stop state, the microcomputer or the output circuit may stop an output of the internal power source.
Abstract: A non-contact power supply apparatus is disclosed. A power supply DC converter receives electric power and outputs a direct current. An inverter electrically connected to the power supply DC converter generates an alternating current. A coil electrically connected to the inverter allows the alternating current to flow therethrough. The power supply DC converter autonomously controls output power to decrease an output voltage when the direct current increases.
Abstract: A processor is disclosed that performs pipelining which processes a plurality of threads and executes instructions in concurrent processing, the instructions corresponding to thread numbers of the threads and including a branch instruction. The processor may include a pipeline processor, which includes a fetch part that fetches the instruction of the thread having an execution right, and a computation execution part that executes the instruction fetched by the fetch part. The processor may include a branch controller that determines whether to drop an instruction subsequent to the branch instruction within the pipeline processor based on the thread number of the thread where the branch instruction is executed and on the thread number of the subsequent instruction.
Abstract: A semiconductor device substrate including: a substrate; a buffer layer which is provided on the substrate and made of a nitride semiconductor; and a device active layer which is formed of a nitride semiconductor layer provided on the buffer layer, the semiconductor device substrate in that the buffer layer includes: a first region which contains carbon and iron; a second region which is provided on the first region and has average concentration of iron lower than that in the first region and average concentration of carbon higher than that in the first region, and the average concentration of the carbon in the second region is lower than the average concentration of the iron in the first region. The semiconductor device substrate which can suppress a transverse leak current in a high-temperature operation of a device while suppressing a longitudinal leak current and can inhibit a current collapse phenomenon is provided.
February 24, 2017
Date of Patent:
November 10, 2020
SANKEN ELECTRIC CO., LTD., SHIN-ETSU HANDOTAI CO., LTD.
Abstract: An alternating-current voltage detection circuit for detecting an alternating-current voltage from an alternating-current power source according to one or more embodiments may include: a rectification circuit that performs full-wave rectification on an alternating-current voltage from the alternating-current power source and supplies a rectified output to a load; a series circuit comprising a first capacitor and a second capacitor electrically connected in series between one end of the alternating-current power source and the ground terminal of the rectification element; a discharge circuit that causes the second capacitor to discharge such that an absolute value of dv/dt voltage does not reach a predetermined voltage, wherein the second capacitor is electrically connected to the ground terminal side of the rectification element; and a predetermined period generator that outputs a signal after an elapse of a predetermined period of time from stoppage of a discharge operation of the discharge circuit.
Abstract: A current collapse characteristic is sufficiently suppressed. After forming a large opening (first opening) passing through both a TEOS oxide layer 42 and an oxide layer 41, a thin oxide layer (third insulating layer) 43 is formed entirely covering the layers 41 and 42 and the first opening. In the thin oxide layer 43 inside the first opening, a second opening for exposing a group-III nitride semiconductor layer 10 is provided. A gate electrode 50 is formed at a slanted portion of the first opening including the second opening. A taper angle of the first opening is smaller in the TEOS oxide layer 42 than in the oxide layer 41.
Abstract: A semiconductor device is disclosed that includes a substrate; a first semiconductor region arranged in the cell region on a first surface side of the substrate; a second semiconductor region arranged in a cell region; a channel stopper electrode arranged in a termination region; a first electrode arranged on the first surface and electrically connected to the second semiconductor region; an insulation film arranged between the channel stopper electrode and the first electrode; first conductors arranged inside the insulation film; second conductors arranged on the insulation film; and a second electrode arranged on a second surface side of the substrate. A width of an overlapping portion in a height direction of the first conductor and the second conductor on the first electrode side is larger than a width of an overlapping portion in the height direction of the first and second conductors on the channel stopper electrode side.
Abstract: An ignition coil includes a first winding, a second winding, and a third winding. A first switch is electrically connected to the first winding. A battery is electrically connected to the first winding. A booster is electrically connected to the battery. A second switch is electrically connected to the third winding. A drive device drives the first switch and the second switch. The drive device turns the first switch from on-state to off-state to allow a secondary current to flow through the second winding, turns the second switch from off-state to on-state to supply an output of the booster to the third winding, and superimpose a second current to the second winding. When a third winding current becomes equal to or greater than a predetermined value, the booster controls such that power generated by the third winding current and an output voltage of the booster is restricted to constant power.
March 14, 2018
Date of Patent:
September 29, 2020
SANKEN ELECTRIC CO., LTD., DENSO CORPORATION
Abstract: A light emitting device includes: a substrate (40); blue light emitting elements (10) arranged on the main surface of the substrate (40); and a phosphor sheet (30) containing a phosphor that is excited by emission light from the blue light emitting elements and emits excitation light, the phosphor sheet (30) being disposed above the blue light emitting elements (30), wherein the blue light emitting elements (10) includes first blue light emitting elements (11) which emit first emission light having a first wavelength taken as a peak wavelength of a light emission spectrum, and second blue light emitting elements (12) which emit second emission light having a second wavelength taken as a peak wavelength of a light emission spectrum, and the second wavelength being a longer wavelength than the first wavelength by a wavelength difference of at least 10 nm.
Abstract: A device and method for controlling a power converter. The device includes an activation terminal configured to obtain a first voltage based on the input voltage; a controlling terminal configured to obtain a second voltage based on the output voltage; and a digital controller configured to obtain a driving power based on the first voltage and/or the second voltage; the digital controller is configured to obtain the driving power at least based on the first voltage when the power converter is stopped. Therefore, a sufficient driving power can be provided for the digital controller even when the power converter is stopped.