Patents Assigned to Santa Barbara Reserarch Center
  • Passivation of mercury cadmium telluride semiconductor surfaces by ozone oxidation
    Patent number: 4414040
    Abstract: A process is provided for forming the native oxide on a semiconductor surface comprising Hg.sub.1-x Cd.sub.x Te, where x ranges from 0 to 1. The process comprises exposing the semiconductor surfce to a mixture of ozone and oxygen containing an effective amount of ozone sufficient to form a native oxide thereon. The desired amount of ozone is conveniently obtained by passing oxygen from a source through an ozone generator provided with a source of high voltage.
    Type: Grant
    Filed: August 20, 1981
    Date of Patent: November 8, 1983
    Assignee: Santa Barbara Reserarch Center
    Inventor: Robert E. Kvaas