Abstract: Heating treatment is performed on a semiconductor wafer in an ammonia atmosphere formed in a chamber by light irradiation from halogen lamps and flash lamps. For the formation of the ammonia atmosphere in the chamber, pressure in the chamber is once reduced. The pressure in the chamber is also reduced after the heating treatment of the semiconductor wafer. Light irradiation from the halogen lamps is performed to heat the atmosphere in the chamber before the pressure in the chamber is reduced by exhausting the atmosphere from the chamber. The heating of the atmosphere in the chamber before the pressure reduction activates the thermal motion of gas molecules in the atmosphere and decreases a gas density. As a result, the gas molecules in the chamber are discharged rapidly during the pressure reduction, so that the pressure in the chamber is reduced to a predetermined pressure in a short time.
Abstract: An inkjet printing apparatus for forming images with ink droplets includes the following elements: an inkjet head, a plurality of holders for removably holding a plurality of ink tanks storing inks interchangeable with each other, branch pipes each having one end thereof connected to one of the ink tanks, a mixer provided at the other ends of the branch pipes, a pump for feeding the inks to the mixer, a feed pipe connecting the mixer and the inkjet head, and a controller for controlling ink feeding. The controller makes different a feed rate of the ink from each of the ink tanks.
Abstract: In a second liquid supply step, a second liquid film and a first liquid film surrounding a side of the second liquid film are formed on an upper surface of a substrate. Then, in a vapor layer formation step, by heating the substrate, a second vapor layer is formed by evaporating the second liquid contacting the upper surface of the substrate, and the second liquid film is held on the second vapor layer. Since the second liquid included in the second liquid film has a high vapor pressure, a height position of a lower surface of the floating second liquid film may be kept high. By blowing a gas to the floating second liquid film, a hole is formed in the second liquid film, and by expanding the hole toward an outer periphery of the substrate, the first liquid and the second liquid are removed outside the substrate.
Abstract: An upstream drive roller transports an elongate medium. An upstream tension sensor detects tension of the medium. A downstream drive roller transports the medium. A downstream tension sensor detects tension of the medium in a position between the upstream and downstream drive rollers. A control unit controls transportation of the medium by operating the upstream drive roller based on a first difference which is a difference between a first detection value and a target value, operating the downstream drive roller based on a second difference which is a difference between a second detection value and a target value, and when a specific condition is satisfied, further operating the downstream driver roller with an adjustment value, which is based on the first difference, added to the second difference.
Abstract: A front surface of a semiconductor wafer is momentarily heated by irradiation with a flash of light from flash lamps. An upper radiation thermometer and a high-speed radiation thermometer unit measure a temperature of the front surface of the semiconductor wafer after the irradiation with the flash of light. The temperature data are sequentially accumulated, so that a temperature profile is acquired. An analyzer determines the highest measurement temperature of the semiconductor wafer subjected to the flash irradiation from the temperature profile to calculate a jump distance of the semiconductor wafer from a susceptor, based on the highest measurement temperature. If the calculated jump distance is greater than a predetermined threshold value, there is a high probability that the semiconductor wafer is significantly out of position, so that the transport of the semiconductor wafer to the outside is stopped.
Abstract: Nitrogen gas supplied from the outside of a chamber flows into an annular first buffer to diffuse uniformly along the circumferential direction of a gas ring. The nitrogen gas filled in the first buffer flows into a second buffer with having a volume larger than that of the first buffer to diffuse more uniformly along the circumferential direction of the gas ring. The nitrogen gas filled in the second buffer flows into a labyrinth portion to flow through a bent flow path of the labyrinth portion from the inside toward the outside along the radial direction of the gas ring, so that a flow rate of the nitrogen gas decreases. The nitrogen gas flowing out of the labyrinth portion flows into a discharge flow path, and flows from the outside toward the inside along the radial direction of the gas ring to be discharged from the gas discharge opening.
Abstract: A printing apparatus performs image printing by controlling discharge of a color ink from a color ink printing part on the basis of print data and performing flushing in which the color ink printing part is caused to discharge the color ink, separately from the discharge of the color ink on the basis of the print data, wherein a control part controls a flushing print rate indicating the area to which the color ink discharged in the flushing is adhered per unit area of a printing medium in accordance with a result of determining a white region to which only white ink is adhered and a color region to which the color ink is adhered in the printing medium on the basis of the print data, and the flushing print rate for the white region is lower than the flushing print rate for the color region.
Abstract: A substrate processing method which processes a substrate having a metal layer on a surface thereof includes a metal oxide layer forming step of forming a metal oxide layer formed of one atomic layer or several atomic layers on a surface layer of the metal layer by supplying an oxidizing fluid to the surface of the substrate, and a metal oxide layer removing step of selectively removing the metal oxide layer from the surface of the substrate by supplying an etchant to the surface of the substrate.
Abstract: A substrate cleaning brush for cleaning a wafer includes a brush main body, a brush holding unit, and a main flow path forming body. The brush main body has a liquid permeable structure and includes a lower surface that comes into contact with a substrate. The brush holding unit holds the brush main body while exposing a distal end portion in a vertical direction of the brush main body to the outside. The main flow path forming body includes a main flow path and a plurality of sub flow paths. The main flow path is formed to allow a processing liquid supplied from the outside to pass therethrough. The plurality of sub flow paths branch off from the main flow path, extend outward in a width direction perpendicular to the vertical direction of the brush main body, and are connected to an upper surface of the brush main body.
Abstract: A semiconductor wafer serving as a treatment target has a stack structure in which a high-dielectric-constant gate insulating film is formed on a silicon base material with an interface layer film of silicon dioxide sandwiched therebetween, and a metal gate electrode containing fluorine is further formed thereon. A heat treatment apparatus radiates flash light from a flash lamp to the semiconductor wafer in an atmosphere containing hydrogen to carry out heating treatment for an extremely short period of time of 100 milliseconds or less. As a result, diffusion of nitrogen contained in the metal gate electrode is inhibited, at the same time, only the fluorine is diffused from the high-dielectric-constant gate insulating film to an interface between the interface layer film and the silicon base material to reduce an interface state, and reliability of the gate stack structure can be improved.
Abstract: A substrate processing apparatus includes a substrate holding unit having a spin base; a blocking member having a substrate facing surface facing an upper surface of the substrate held by the substrate holding unit and having a diameter larger than the spin base; a blocking member lifting unit raising and lowering the blocking member between a blocking position where a space between the substrate facing surface and the upper surface is blocked from lateral side on the upper surface and a retreat position where the space is not blocked from the lateral side on the upper surface; guards including an inner side and an outer side guards respectively surrounding periphery of the substrate holding unit and surrounding periphery of the inner side guard. An inner circumferential end of the outer side guard is positioned on radial outer side of an inner circumferential end of the inner side guard.
Abstract: An image data processing method for estimating an ink consumption amount includes: an image data compression step of compressing image data after RIP processing by run-length encoding; and an ink consumption amount estimation step of calculating a predicted ink consumption amount when printing based on image data is performed by an inkjet printing device based on information on the number of occurrences for each gradation value obtained when run-length encoding is applied to image data and information on an ink consumption amount for each gradation value held in an ink consumption amount table prepared in advance.
Abstract: A substrate processing apparatus processes a surface of a substrate with a processing fluid and includes a support tray in which a concave part for housing the substrate is provided on an upper surface thereof; a storage container in which a cavity is formed, wherein the support tray may be stored in a horizontal posture in the cavity; and a fluid supply part supplying the processing fluid to the cavity, wherein the storage container has a flow path which receives the processing fluid and discharges the processing fluid in a horizontal direction into the cavity from a discharge port that opens on a side wall surface of the cavity and toward the cavity, and a lower end position of the discharge port in a vertical direction is the same as or higher than a position of the upper surface of the support tray stored in the cavity.
Abstract: The disclosure provides a substrate processing apparatus that processes a surface of a substrate with a processing fluid in a supercritical state, in which the substrate is protected from the pressure fluctuation caused by partial vaporization of the processing fluid in the flow path. A substrate processing apparatus which processes a surface of a substrate with a processing fluid in a supercritical state includes a chamber housing provided therein with a processing space capable of housing the substrate and a flow path which receives the processing fluid from outside and guides the processing fluid to the processing space, and a fluid supply part which pressure-feeds the processing fluid to the flow path, wherein a plurality of bent parts which change a flow direction of the processing fluid are provided in the flow path.
Abstract: First irradiation which causes an emission output from a flash lamp to reach its maximum value over a time period in the range of 1 to 20 milliseconds is performed to increase the temperature of a front surface of a semiconductor wafer from a preheating temperature to a target temperature for a time period in the range of 1 to 20 milliseconds. This achieves the activation of the impurities. Subsequently, second irradiation which gradually decreases the emission output from the maximum value over a time period in the range of 3 to 50 milliseconds is performed to maintain the temperature of the front surface within a ±25° C. range around the target temperature for a time period in the range of 3 to 50 milliseconds. This prevents the occurrence of process-induced damage while suppressing the diffusion of the impurities.
Abstract: An upper spin chuck and a lower spin chuck are arranged in a vertical direction. In the lower spin chuck, a substrate holder sucks a center portion of a lower surface of a substrate, so that the substrate is held. In this state, a peripheral portion of the lower surface of the substrate rotated by a spin motor is cleaned by a brush of a first back surface cleaning mechanism. In the upper spin chuck, a plurality of chuck pins abut against an outer peripheral end of the substrate, so that the substrate is held. In this state, a region inward of the peripheral portion of the lower surface of the substrate rotated by the spin motor is cleaned by a brush of a second back surface cleaning mechanism. Receiving and transferring of the substrate are performed by a receiving transferring mechanism between the upper and the lower spin chucks.
Abstract: A continuous lighting lamp irradiates a semiconductor wafer held by a quartz susceptor with light from below to perform preliminary heating, and then irradiation of a flash of light is performed by a flash lamp from above. A light absorption ring is provided so as to be close to a peripheral portion of the semiconductor wafer held by the susceptor. The light absorption ring absorbs infrared light and transmits visible light through itself. During preliminary heating, the light absorption ring absorbs light emitted from the continuous lighting lamp to be increased in temperature so that heat radiated from the peripheral portion of the wafer is compensated to cause in-plane temperature distribution of the semiconductor wafer to be uniform. Meanwhile, the flash of light is transmitted through the light absorption ring, so that the light absorption ring is prevented from being damaged by the irradiation of the flash of light.
Abstract: A valve is closed while a cleaning liquid is fed into a tubular body of a cleaning nozzle, and a piezoelectric element applies vibrations to the cleaning liquid. This causes droplets of the cleaning liquid to be produced and discharged from a plurality of discharge holes. The droplet diameter of the discharged droplets is in the range from 15 to 200 ?m, and the distribution of the droplet diameter is such that the value of where a value of 3? does not exceed 10% of the average droplet diameter. The droplet speed is in the range from 20 to 100 meters per second, and the distribution of the droplet speed is such that the value of where a value of 3? does not exceed 10% of the average droplet speed. The droplet flow rate is not less than 10 milliliters per minute. Discharging the droplets of the cleaning liquid from the cleaning nozzle toward a substrate while satisfying these discharge conditions improves cleaning efficiency without damages to the substrate.
Abstract: A substrate processing method includes a rinse liquid supplying step of supplying a rinse liquid containing water to a major surface of a substrate, a rotating step of rotating the substrate around a rotation axis passing through a central portion of the major surface of the substrate, and a hydrophobizing agent supplying step of supplying a hydrophobizing agent containing a first dissolving agent to the major surface of the substrate to replace a liquid held on the major surface of the substrate with the hydrophobizing agent in parallel with the rotating step after the rinse liquid supplying step is performed, and the hydrophobizing agent supplying step includes a hydrophobizing agent discharging step of discharging a continuous flow of the hydrophobizing agent from a discharge port of a nozzle toward the major surface of the substrate held by a substrate holding unit with a Reynolds number at the discharge port being not more than 1500.
Abstract: A substrate processing apparatus includes a base portion 1541 that is disposed in a manner of being adjacent to a chamber; a hand 155 that holds a substrate S; an arm 1542 that is attached to the base portion 1541, supports the hand, and moves the hand forward and rearward by horizontally moving the hand with respect to the base portion; and a cover portion 156 that accommodates the hand in an internal space. The cover portion has a cover main body 1561 forming the internal space and an extending member 1562 having a hollow structure which penetrates the cover portion in a horizontal direction and of which one end serves as an opening 1562a and being engaged with the cover main body in a state of being movable in the horizontal direction while the opening communicates with the internal space.
May 13, 2020
November 19, 2020
SCREEN Holdings Co., Ltd.
Hiroyuki KAWAHARA, Koji HASHIMOTO, Noriyuki KIKUMOTO, Noritake SUMI