Patents Assigned to Seiwa Electric Mfg. Co., Ltd.
  • Patent number: 11043314
    Abstract: A conductive sheet capable of improving conductivity by suppressing reaggregation of carbon nanotubes, and a manufacturing method thereof are provided. Also, carbon composite paste and carbon composite filler are provided. The conductive sheet is characterized in that carbon nanotubes and carbon black as conductive materials are dispersed in a resin material. Carbon composite filler, which is composed of the carbon nanotubes in an amount of 10-30 wt. % and the carbon black in an amount of 90-70 wt. %, is dispersed uniformly in the resin material. The conductive sheet is composed of the carbon composite filler in an amount of 10-50 wt. % and the resin material in an amount of 90-50 wt. %, whose surface resistance value is 1-10 ?/sq.
    Type: Grant
    Filed: October 30, 2014
    Date of Patent: June 22, 2021
    Assignees: UNIVERSITY PUBLIC CORPORATION OSAKA, SEIWA ELECTRIC MFG. CO., LTD.
    Inventors: Shinichi Kitamura, Kenji Matsuno, Yukihiro Hijiri, Takeshi Horiguchi
  • Publication number: 20160268017
    Abstract: A conductive sheet capable of improving conductivity by suppressing reaggregation of carbon nanotubes, and a manufacturing method thereof are provided. Also, carbon composite paste and carbon composite filler are provided. The conductive sheet is characterized in that carbon nanotubes and carbon black as conductive materials are dispersed in a resin material. Carbon composite filler, which is composed of the carbon nanotubes in an amount of 10-30 wt. % and the carbon black in an amount of 90-70 wt. %, is dispersed uniformly in the resin material. The conductive sheet is composed of the carbon composite filler in an amount of 10-50 wt. % and the resin material in an amount of 90-50 wt. %, whose surface resistance value is 1-10 ?/sq.
    Type: Application
    Filed: October 30, 2014
    Publication date: September 15, 2016
    Applicants: OSAKA PREFECTURE UNIVERSITY, SEIWA ELECTRIC MFG. CO., LTD.
    Inventors: Shinichi KITAMURA, Kenji MATSUNO, Yukihiro HIJIRI, Takeshi HORIGUCHI
  • Patent number: 9261665
    Abstract: A locking device for optical drop cable 100 comprising a cable conductor optical fiber 210, tension members 220 sandwiching the cable conductor optical fiber 210, a sheath 230 having a notched portion 250 covering the cable conductor optical fiber 210 and the tension members 220, a rubber sleeve 20 of the shape constituting a part of the conical wherein several through-holes 26 corresponding to an outline of the sheath 230 are formed along a shaft center, and a slit portion 18 and a tapered portion 34 configured to squeeze the rubber sleeve 20 toward the shaft center direction in a state where a optical drop cable 200 is passed through the through-hole 26, is provided to easily realize waterproofing measures for the optical drop cable of a peculiar shape.
    Type: Grant
    Filed: August 9, 2013
    Date of Patent: February 16, 2016
    Assignee: Seiwa Electric MFG. Co., Ltd.
    Inventors: Misa Fukumoto, Akira Kuto
  • Publication number: 20120125169
    Abstract: A movable stage on which an LED chip is placed is moved in horizontal directions (for example, the x-axis direction and the y-axis direction) under the control of a position adjusting section. A probe needle is brought into contact with a bonding electrode on the surface of the LED chip to apply a desired voltage to the LED chip. A light detecting section detects light from the LED chip. An optical characteristic measuring section measures, based on the results of detection by the light detecting section, optical characteristics of the LED chip. A laser light source removes a part of the surface of the LED chip by laser light.
    Type: Application
    Filed: November 18, 2011
    Publication date: May 24, 2012
    Applicant: SEIWA ELECTRIC MFG. CO., LTD.
    Inventor: Shuhei SUDA
  • Publication number: 20110284883
    Abstract: Provided is a light-emitting element in which two LED structures are dividedly formed on a rectangular substrate. The LED structures are each a semiconductor layer made by laminating an n-type semiconductor layer (a LED structure), an active layer (not shown), and a p-type semiconductor layer, and are respectively provided near both ends of a diagonal line of the upper surface of the substrate. On the upper surface of the substrate, two bonding electrodes each having a circular surface are also respectively formed near both ends of the other diagonal line, and two resistance elements each formed of the n-type semiconductor layer are respectively provided near two opposite sides of the substrate.
    Type: Application
    Filed: May 24, 2011
    Publication date: November 24, 2011
    Applicant: SEIWA ELECTRIC MFG. CO., LTD.
    Inventor: Shuhei SUDA
  • Patent number: 7265486
    Abstract: In an LED (Light Emitting Diode) including a cover covering an LED element, the cover is formed using glass having a composition RnSiO2-n/2. The glass according to the present invention is low melting point glass with a softening temperature of ?40° C. to 300° C., melts at lower temperatures compared to conventional glass, and can safely form the cover without damaging the LED element. Since glass has better moisture shield performance and resistance to light compared to epoxy resins, the cover is formed using glass, and consequently deterioration of the LED element and a phosphor caused by moisture is reduced, deterioration of the cover caused by light is reduced, and changes in color and luminous intensity are restrained.
    Type: Grant
    Filed: July 29, 2004
    Date of Patent: September 4, 2007
    Assignees: Seiwa Electric Mfg. Co., Ltd.
    Inventors: Toshinobu Yoko, Masahide Takahashi, Kenji Matsuno
  • Publication number: 20060056945
    Abstract: An object of the present invention is to minimize a fear of damaging parts when they are transferred from a carry-in cassette to a carry-out cassette and to shorten a transferring time. Tip end portions of a thrusting-down pin 30 and a suction collet 50 are brought into contact with a back face of an adhesive sheet 11 of a carry-in cassette 10 to thrust down a semiconductor chip 1 and the thrust-down semiconductor chip 1 is received on a carry-out cassette 20A, 20B, or 20C and stuck on an adhesive sheet 21A, 21B, or 21C of a receiving face 201A, 201B, or 201C of the carry out cassette 20A, 20B, or 20C.
    Type: Application
    Filed: August 5, 2005
    Publication date: March 16, 2006
    Applicant: C/O SEIWA ELECTRIC MFG. CO., LTD.
    Inventor: Koji DAIO
  • Patent number: 7005086
    Abstract: A fluorescent substance is obtained by weighing and mixing CaS, Ga2S3, EuS and Ce2S3 in a mole ratio of (1-x):a:x:y (wherein 0.001?x?0.2, 0.0001?y?0.02 and 0.5?a?5) and by sintering the mixture. A light-emitting diode comprises an LED chip 2 and an LED chip sealing portion 5, made of silicone resin and including the fluorescent substance, for enclosing the LED chip 2. Hence, a fluorescent substance that is excited by light having a predetermined wavelength to emit light, a light-emitting diode having excellent luminous efficiency and luminous intensity, and a method for producing the fluorescent substance are attained by the present invention.
    Type: Grant
    Filed: November 6, 2003
    Date of Patent: February 28, 2006
    Assignee: Seiwa Electric Mfg. Co., Ltd.
    Inventor: Kenji Matsuno
  • Patent number: 5296718
    Abstract: ZnSSE mixed crystal semiconductors and ZnCdSe mixed crystal semiconductors are alternately laminated on a single crystal substrate composed of a III-V or II-VI compound to form a light emitting semiconductor device of a multilayer structure so that electrons and holes are efficiently confined therein. This increases the carrier recombination probability and emission efficiency. A device may be arranged where mixed crystal semiconductors of two types respectively having different component compositions of Zn.sub.1-x1 Cd.sub.x1 S.sub.y1 Se.sub.1-y1 and Zn.sub.1-x2 Cd.sub.x2 S.sub.y2 Se .sub.1-y2 are alternately laminated on a single crystal substrate composed of a III-V or II-VI compound such that the ratio of components of the mixed crystal semiconductors of two types satisfies the relationship that x.sub.1 is smaller than x.sub.2 and y.sub.1 is greater than y.sub.2. Alternately, a device may be arranged where a Zn.sub.1-x Cd.sub.x S.sub.y Se.sub.
    Type: Grant
    Filed: February 18, 1992
    Date of Patent: March 22, 1994
    Assignee: Seiwa Electric Mfg. Co., Ltd.
    Inventors: Shigeo Fujita, Shizuo Fujita