Patents Assigned to Semiconductor Energy Laboratory Co., Ltd.
  • Publication number: 20220352279
    Abstract: A display device with less display unevenness is provided. The display device includes a first layer and a second layer over the first layer; the first layer includes first circuits arranged in m rows and n columns; the second layer includes pixel blocks arranged in the m rows and the n columns; the pixel blocks each comprise pixels arranged in a rows and b columns; the pixel block includes a first wiring and a second wiring electrically connected to the pixel; the first wiring and the second wiring included in the pixel block in the i-th row and the j-th column are each electrically connected to the first circuit in the i-th row and the j-th column; the first wiring has a function of supplying an input signal from the first circuit to the pixel; and the second wiring has a function of supplying an output signal from the pixel to the first circuit.
    Type: Application
    Filed: June 15, 2020
    Publication date: November 3, 2022
    Applicant: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Hidetomo Kobayashi, Takayuki IKEDA
  • Patent number: 11488668
    Abstract: Provided is a semiconductor device capable of reducing its area, operating at a high speed, or reducing its power consumption. A circuit 50 is used as a memory circuit with a function of performing an arithmetic operation. One of a circuit 80 and a circuit 90 has a region overlapping with at least part of the other of the circuit 80 and the circuit 90. Accordingly, the circuit 50 can perform the arithmetic operation that is essentially performed in the circuit 60; thus, a burden of the arithmetic operation on the circuit 60 can be reduced. Moreover, the number of times of data transmission and reception between the circuits 50 and 60 can be reduced. Furthermore, the circuit 50 functioning as a memory circuit can have a function of performing an arithmetic operation while the increase in the area of the circuit 50 is suppressed.
    Type: Grant
    Filed: August 17, 2020
    Date of Patent: November 1, 2022
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventor: Hikaru Tamura
  • Patent number: 11487144
    Abstract: A novel input/output device that is highly convenient or reliable is provided. The input/output device includes a display portion and an input portion, and the display portion includes a liquid crystal element. The liquid crystal element includes a first electrode, a second electrode, a layer containing a liquid crystal material, a first alignment film, and a second alignment film, and the second electrode is provided such that an electric field is applied to the layer containing a liquid crystal material between the first electrode and the second electrode. The layer containing a liquid crystal material scatters incident light with first scattering intensity when the electric field is in a first state, the layer containing a liquid crystal material scatters the incident light with second scattering intensity when the electric field is in a second state, which is higher than that in the first state, and the second scattering intensity is 10 or more times as high as the first scattering intensity.
    Type: Grant
    Filed: July 30, 2019
    Date of Patent: November 1, 2022
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Koji Kusunoki, Tetsuji Ishitani
  • Patent number: 11489077
    Abstract: The impurity concentration in the oxide semiconductor film is reduced, and a highly reliability can be obtained.
    Type: Grant
    Filed: August 24, 2020
    Date of Patent: November 1, 2022
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Masahiro Watanabe, Mitsuo Mashiyama, Kenichi Okazaki, Motoki Nakashima, Hideyuki Kishida
  • Patent number: 11488528
    Abstract: To provide a display device capable of displaying a plurality of images by superimposition using a plurality of memory circuits provided in a pixel. A plurality of memory circuits are provided in a pixel, and signals corresponding to images for superimposition are retained in each of the plurality of memory circuits. In the pixel, the signals corresponding to the images for superimposition are added to each of the plurality of memory circuits. The signals are added to the signals retained in the memory circuits by capacitive coupling. A display element can display an image corresponding to a signal in which a signal written to a pixel through a wiring is added to the signals retained in the plurality of memory circuits. Reduction in the amount of arithmetic processing for displaying images by superimposition can be achieved.
    Type: Grant
    Filed: October 30, 2018
    Date of Patent: November 1, 2022
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Susumu Kawashima, Koji Kusunoki, Kei Takahashi, Shunpei Yamazaki
  • Patent number: 11489076
    Abstract: To improve field-effect mobility and reliability in a transistor including an oxide semiconductor film. A semiconductor device includes a transistor including an oxide semiconductor film. The transistor includes a region where the maximum value of field-effect mobility of the transistor at a gate voltage of higher than 0 V and lower than or equal to 10 V is larger than or equal to 40 and smaller than 150; a region where the threshold voltage is higher than or equal to minus 1 V and lower than or equal to 1 V; and a region where the S value is smaller than 0.3 V/decade.
    Type: Grant
    Filed: July 1, 2020
    Date of Patent: November 1, 2022
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Junichi Koezuka, Kenichi Okazaki, Yukinori Shima, Shinpei Matsuda, Haruyuki Baba, Ryunosuke Honda
  • Patent number: 11489151
    Abstract: A positive electrode active material particle with little deterioration is provided. A power storage device with little deterioration is provided. A highly safe power storage device is provided. The positive electrode active material particle includes a first crystal grain, a second crystal grain, and a crystal grain boundary positioned between the crystal grain and the second crystal grain; the first crystal grain and the second crystal grain include lithium, a transition metal, and oxygen; the crystal grain boundary includes magnesium and oxygen; and the positive electrode active material particle includes a region where the ratio of the atomic concentration of magnesium in the crystal grain boundary to the atomic concentration of the transition metal in first crystal grain and the second crystal grain is greater than or equal to 0.010 and less than or equal to 0.50.
    Type: Grant
    Filed: May 1, 2018
    Date of Patent: November 1, 2022
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Masahiro Takahashi, Teruaki Ochiai, Yohei Momma, Ayae Tsuruta
  • Patent number: 11489065
    Abstract: A minute transistor is provided. A transistor with low parasitic capacitance is provided. A transistor having high frequency characteristics is provided. A semiconductor device including the transistor is provided. A semiconductor device includes an oxide semiconductor, a first conductor, a second conductor, a third conductor, a first insulator, and a second insulator. The first conductor overlaps with the oxide semiconductor with the first insulator positioned therebetween. The second insulator has an opening and a side surface of the second insulator overlaps with a side surface of the first conductor in the opening with the first insulator positioned therebetween. Part of a surface of the second conductor and part of a surface of the third conductor are in contact with the first insulator in the opening. The oxide semiconductor overlaps with the second conductor and the third conductor.
    Type: Grant
    Filed: October 19, 2020
    Date of Patent: November 1, 2022
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Satoru Okamoto, Shinya Sasagawa
  • Patent number: 11487373
    Abstract: A display device featuring a touch detection and a fingerprint imaging functions is provided. A display device includes a light-emitting element and a light-receiving element. The light-emitting element includes a first pixel electrode, a light-emitting layer, and a common electrode, and the light-receiving element includes a second pixel electrode, an active layer, and the common electrode. The first pixel electrode and the second pixel electrode are provided on the same plane. The common electrode overlaps with the first pixel electrode with the light-emitting layer therebetween, and overlaps with the second pixel electrode with the active layer therebetween. A first conductive layer, a second conductive layer, and an insulating layer are provided above the common electrode. The insulating layer is provided above the first conductive layer, and the second conductive layer is provided above the insulating layer.
    Type: Grant
    Filed: September 21, 2020
    Date of Patent: November 1, 2022
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Daisuke Kubota, Ryo Hatsumi, Taisuke Kamada, Koji Kusunoki, Kazunori Watanabe, Susumu Kawashima, Kensuke Yoshizumi
  • Patent number: 11489148
    Abstract: An object of one embodiment of the present invention is to provide a secondary battery in which deterioration of charge-discharge cycle characteristics is suppressed, to suppress generation of defects caused by expansion and contraction of an active material in a negative electrode, or to prevent deterioration caused by deformation of a secondary battery. To prevent deterioration, a material that can be alloyed with lithium and fluidified easily is used for a negative electrode. To hold a negative electrode active material over a surface of a current collector, a covering layer that covers the negative electrode active material is provided. Furthermore, a portion where the current collector and the negative electrode active material are in contact with each other is alloyed. In other words, an alloy that is in contact with both the current collector and the negative electrode active material is provided in the negative electrode.
    Type: Grant
    Filed: January 28, 2020
    Date of Patent: November 1, 2022
    Assignee: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Nobuhiro Inoue, Ryota Tajima, Naoki Kurihara, Junpei Momo
  • Publication number: 20220344391
    Abstract: The structure of an imaging device is simplified. An imaging device capable of imaging without a lens or an image processing method is provided. Image data which is out of focus is sharpened. An image processing method of image data in which a plurality of pixels are arranged is provided. Adjacent two pixels are each divided into a first region showing the same pixel value between the adjacent two pixels and a second region other than the first region, an initial value is supplied to the second region of an endmost pixel of the image data, and the pixel values of the first regions and the second regions of the plurality of arranged pixels are determined inductively and sequentially on the basis of the initial value.
    Type: Application
    Filed: September 17, 2019
    Publication date: October 27, 2022
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Ryo HATSUMI, Taisuke KAMADA, Daisuke KUBOTA
  • Patent number: 11482155
    Abstract: Variations in a receiving circuit employing differential signaling are reduced. The receiving circuit converts a first signal and a second signal which are supplied through differential signaling into a third signal which is a single-ended signal and outputs the third signal. The receiving circuit includes an operational amplifier, a first element, a first transistor, and a first circuit. The first element is connected to the first circuit through a first node to which the first transistor is connected. The first signal and the second signal that is the inverse of the first signal are supplied to the operational amplifier. The operational amplifier supplies an output signal to the first element, and a first preset potential is supplied to the first node through the first transistor. A signal including variations of the operational amplifier is stored in the first element in accordance with the first preset potential.
    Type: Grant
    Filed: July 10, 2019
    Date of Patent: October 25, 2022
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Takeya Hirose, Takahiro Fukutome
  • Patent number: 11482674
    Abstract: A light-emitting element containing a light-emitting material with high light emission efficiency is provided. The light-emitting element includes a high molecular material and a guest material. The high molecular material includes at least a first high molecular chain and a second high molecular chain. The guest material has a function of exhibiting fluorescence or converting triplet excitation energy into light emission. The first high molecular chain and the second high molecular chain each include a first skeleton, a second skeleton, and a third skeleton, and the first skeleton and the second skeleton are bonded to each other through the third skeleton. The first high molecular chain and the second high molecular chain have a function of forming an excited complex.
    Type: Grant
    Filed: March 1, 2021
    Date of Patent: October 25, 2022
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Satoshi Seo, Nobuharu Ohsawa
  • Patent number: 11480621
    Abstract: It is difficult to know the remaining amount and the degradation state of a power storage device, and it is also difficult to estimate how long the power storage device can be used. Data obtained through midway discharge and mid-to-full charge is used as the learning data to calculate the degradation state and the capacity. In other words, the learning data includes both a discharge curve of midway discharge and a charge curve of mid-to-full charge, and neural network processing is performed with the use of the learned data.
    Type: Grant
    Filed: October 25, 2018
    Date of Patent: October 25, 2022
    Assignee: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Ryota Tajima, Toshiyuki Isa, Akihiro Chida
  • Patent number: 11482146
    Abstract: An object is to provide a display system with a novel structure and a vehicle. The display system includes a display and a control IC. The control IC includes a frame memory, an arithmetic circuit, and a memory circuit. The display has a curved display surface. The frame memory has a function of holding first image data dedicated to displaying an image on a flat surface. The memory circuit has a function of storing shape data on the display. The arithmetic circuit has a function of converting first coordinates of the curved display surface into second coordinates of the flat surface included in the first image data, by performing arithmetic operation in accordance with the shape data. The arithmetic circuit has a function of outputting the first image data stored in the frame memory to the display as second image data on the basis of the second coordinates.
    Type: Grant
    Filed: May 4, 2020
    Date of Patent: October 25, 2022
    Assignee: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Shunpei Yamazaki, Takayuki Ikeda
  • Patent number: 11482625
    Abstract: A novel oxide semiconductor, a novel oxynitride semiconductor, a transistor including them, or a novel sputtering target is provided. A composite target includes a first region and a second region. The first region includes an insulating material and the second region includes a conductive material. The first region and the second region each include a microcrystal whose diameter is greater than or equal to 0.5 nm and less than or equal to 3 nm or a value in the neighborhood thereof. A semiconductor film is formed using the composite target.
    Type: Grant
    Filed: September 17, 2019
    Date of Patent: October 25, 2022
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventor: Shunpei Yamazaki
  • Patent number: 11482626
    Abstract: A semiconductor device with favorable electrical characteristics is provided. A semiconductor device having stable electrical characteristics is provided. The semiconductor device includes a semiconductor layer containing a metal oxide, a first insulating layer, a second insulating layer, a third insulating layer containing a nitride, and a first conductive layer. The first insulating layer includes a projecting first region that overlaps with the semiconductor layer and a second region that does not overlap with the semiconductor layer and is thinner than the first region. The second insulating layer is provided to cover a top surface of the second region, a side surface of the first region, and the semiconductor layer. The first conductive layer is provided over the second insulating layer and a bottom surface of the first conductive layer over the second region includes a portion positioned below a bottom surface of the semiconductor layer.
    Type: Grant
    Filed: March 15, 2019
    Date of Patent: October 25, 2022
    Assignee: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Shunpei Yamazaki, Kenichi Okazaki, Masami Jintyou, Takahiro Iguchi, Yukinori Shima
  • Publication number: 20220338316
    Abstract: A novel functional panel that is highly convenient or reliable is provided. A novel display device is provided. The functional panel includes an optical element, a first insulating film, and a region. The optical element has a first refractive index; the optical element is a concave lens; the optical element has a first surface and a second surface; the optical element has a first cross section on a first plane; the first surface forms a first curve in the first cross section; the first curve has a first radius of curvature; the second surface faces the first surface; the second surface is irradiated with first light; the first insulating film is interposed between the optical element and the region; the first insulating film is in contact with the second surface; the region overlaps with the second surface; the region faces the second surface; the region emits the first light; and a distance L1 is a distance between the region and the second surface.
    Type: Application
    Filed: September 25, 2020
    Publication date: October 20, 2022
    Applicant: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Daiki NAKAMURA, Tomoya AOYAMA
  • Publication number: 20220336755
    Abstract: A novel mixed material for a light-emitting device with improved heat resistance is provided. The mixed material for a light-emitting device includes a first heteroaromatic compound and a second heteroaromatic compound. The first heteroaromatic compound includes a first heteroaromatic ring. The first heteroaromatic ring includes a ring including two or more nitrogen atoms and any one of a benzene ring and a pyridine ring or a ring including a diazine ring or a triazine ring. The second heteroaromatic compound includes a second heteroaromatic ring. The second heteroaromatic ring includes a ring including two or more nitrogen atoms and any one of a benzene ring and a pyridine ring or a ring including a diazine ring or a triazine ring. A structure of the first heteroaromatic ring is different from a structure of the second heteroaromatic ring.
    Type: Application
    Filed: March 24, 2022
    Publication date: October 20, 2022
    Applicant: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Yui Yoshiyasu, Naoaki Hashimoto, Tatsuyoshi Takahashi, Sachiko Kawakami, Satoshi Seo
  • Patent number: 11476280
    Abstract: To provide a display device including a flexible panel that can be handled without seriously damaging a driver circuit or a connecting portion between circuits. The display device includes a bent portion obtained by bending an element substrate. A circuit for driving the display device is provided in the bent portion and a wiring extends from the circuit, whereby the strength of a portion including the circuit for driving the display device is increased and failure of the circuit is reduced. Furthermore, the element substrate is bent in a connecting portion between an external terminal electrode and an external connecting wiring (FPC) so that the element substrate provided with the external terminal electrode fits the external connecting wiring, whereby the strength of the connecting portion is increased.
    Type: Grant
    Filed: May 14, 2021
    Date of Patent: October 18, 2022
    Assignee: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventor: Atsushi Miyaguchi