Patents Assigned to Semiconductor Energy Laboratory Co., Ltd.
  • Patent number: 11063066
    Abstract: The stability of a step of processing a wiring formed using copper, aluminum, gold, silver, molybdenum, or the like is increased. Moreover, the concentration of impurities in a semiconductor film is reduced. Moreover, the electrical characteristics of a semiconductor device are improved. In a transistor including an oxide semiconductor film, an oxide film in contact with the oxide semiconductor film, and a pair of conductive films being in contact with the oxide film and including copper, aluminum, gold, silver, molybdenum, or the like, the oxide film has a plurality of crystal parts and has c-axis alignment in the crystal parts, and the c-axes are aligned in a direction parallel to a normal vector of a top surface of the oxide semiconductor film or the oxide film.
    Type: Grant
    Filed: May 23, 2019
    Date of Patent: July 13, 2021
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Junichi Koezuka, Yasutaka Nakazawa, Yukinori Shima, Masami Jintyou, Masayuki Sakakura, Motoki Nakashima
  • Patent number: 11061058
    Abstract: The present invention provides a radio field intensity measurement device having a display portion with improved visibility, in the case of measuring a weak radiowave from a long distance. In the radio field intensity measurement device, a battery is provided as a power source for power supply and the battery is charged by a received radiowave. When a potential of a signal obtained from the received radiowave is higher than an output potential of the battery, the power is stored in the battery. On the other hand, when the potential of the signal obtained from the received radiowave is lower than the output potential of the battery, power produced by the battery is used as power to drive the radio field intensity measurement device. As an element to display the radio field intensity, a thermochromic element or an electrochromic element is used.
    Type: Grant
    Filed: April 22, 2020
    Date of Patent: July 13, 2021
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Hiroki Dembo, Atsushi Miyaguchi
  • Patent number: 11063102
    Abstract: The present invention provides a TFT that has a channel length particularly longer than that of an existing one, specifically, several tens to several hundreds times longer than that of the existing one, and thereby allowing turning to an on-state at a gate voltage particularly higher than the existing one and driving, and allowing having a low channel conductance gd. According to the present invention, not only the simple dispersion of on-current but also the normalized dispersion thereof can be reduced, and other than the reduction of the dispersion between the individual TFTs, the dispersion of the OLEDs themselves and the dispersion due to the deterioration of the OLED can be reduced.
    Type: Grant
    Filed: March 20, 2019
    Date of Patent: July 13, 2021
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Makoto Udagawa, Masahiko Hayakawa, Jun Koyama, Mitsuaki Osame, Aya Anzai
  • Patent number: 11062666
    Abstract: A semiconductor device with a small circuit area that consumes low power is provided. The semiconductor device includes a shift register, a sample-and-hold circuit, a first buffer circuit, and a second buffer circuit. The sample-and-hold circuit includes a first input terminal, a second input terminal, and an output terminal. An output terminal of the first buffer circuit is electrically connected to the first input terminal. The shift register is electrically connected to the second input terminal. An input terminal of the second buffer circuit is electrically connected to the output terminal of the sample-and-hold circuit. In the semiconductor device, the potential of an input analog signal is retained in the sample-and-hold circuit and the analog signal is output from an output terminal of the second buffer circuit.
    Type: Grant
    Filed: February 20, 2020
    Date of Patent: July 13, 2021
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Yoshiyuki Kurokawa, Takayuki Ikeda, Tatsunori Inoue
  • Publication number: 20210210517
    Abstract: A display device capable of improving image quality is provided. A storage node is provided in each pixel and first data can be held in the storage node. Second data is added to the first data by capacitive coupling, which can be supplied to a display element. Thus, the display device can display a corrected image. A reference potential for the capacitive coupling operation is supplied from a power supply line or the like, and thus the first data and the second data can be supplied from a common signal line.
    Type: Application
    Filed: November 15, 2018
    Publication date: July 8, 2021
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Susumu KAWASHIMA, Naoto KUSUMOTO
  • Publication number: 20210206767
    Abstract: A novel compound is provided. The novel compound is represented by General Formula (G1). Each of A1 and A2 independently represents a substituted or unsubstituted condensed aromatic ring, a substituted or unsubstituted condensed heteroaromatic ring, or a structure represented by Formula (Z-1) or (Z-2); and each of Z1 and Z2 independently has a structure represented by Formula (Z-1) or (Z-2). Each of X1 and X2 independently represents any one of an alkyl group, a cycloalkyl group, a substituted or unsubstituted cycloalkyl group having a bridge structure, and a trialkylsilyl group. Each of Ar1 and Ar2 independently represents a substituted or unsubstituted aromatic hydrocarbon group, and at least one of Ar1 and Ar2 includes the same substituent as X1. Each of R1 to R16 independently represents any one of hydrogen, an alkyl group, a substituted or unsubstituted cycloalkyl group, a trialkylsilyl group, and a substituted or unsubstituted aryl group.
    Type: Application
    Filed: December 23, 2020
    Publication date: July 8, 2021
    Applicant: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Takuya HARUYAMA, Nobuharu OHSAWA, Satoshi SEO
  • Publication number: 20210206775
    Abstract: Provided is a novel organic compound, a benzofuropyrimidine derivative or a benzothienopyrimidine derivative, which is an organic compound represented by General Formula (G1) below. In General Formula (G1), Q represents oxygen or sulfur. Furthermore, A is a group having 12 to 100 carbon atoms in total and includes one or more of a benzene ring, a naphthalene ring, a fluorene ring, a phenanthrene ring, a triphenylene ring, a heteroaromatic ring including a dibenzothiophene ring, a heteroaromatic ring including a dibenzofuran ring, a heteroaromatic ring including a carbazole ring, a benzimidazole ring, and a triphenylamine structure.
    Type: Application
    Filed: May 21, 2019
    Publication date: July 8, 2021
    Applicant: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Satomi WATABE, Hideko YOSHIZUMI, Satoshi SEO, Hiromitsu KIDO, Toshiki SASAKI
  • Patent number: 11056515
    Abstract: To reduce a leakage current of a transistor so that malfunction of a logic circuit can be suppressed. The logic circuit includes a transistor which includes an oxide semiconductor layer having a function of a channel formation layer and in which an off current is 1×10?13 A or less per micrometer in channel width. A first signal, a second signal, and a third signal that is a clock signal are input as input signals. A fourth signal and a fifth signal whose voltage states are set in accordance with the first to third signals which have been input are output as output signals.
    Type: Grant
    Filed: March 12, 2020
    Date of Patent: July 6, 2021
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Jun Koyama, Masashi Tsubuku, Kosei Noda
  • Patent number: 11054710
    Abstract: A display device capable of performing image processing is provided. Each pixel is provided with a memory circuit, and desired correction data is held in the memory circuit. The correction data is calculated in an external device and written into each pixel. The correction data is added to image data owing to capacitive coupling, and the resulting data is supplied to a display element. Thus, a corrected image can be displayed with the display element. The correction enables image upconversion or can compensate for an image quality reduction due to characteristics variations of transistors included in pixels.
    Type: Grant
    Filed: July 26, 2018
    Date of Patent: July 6, 2021
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Koji Kusunoki, Kazunori Watanabe, Susumu Kawashima
  • Patent number: 11054687
    Abstract: A method for manufacturing a display device with low power consumption is provided. A method for manufacturing a display device includes a step of forming a first layer over a substrate by using a material containing a resin or a resin precursor, a step of forming a first region and a second region thinner than the first region in the first layer, a step of forming a first resin layer including a first region and a second region thinner than the first region by performing first heat treatment on the first layer in a gas containing oxygen, a step of forming, over the first resin layer, a layer to be separated including a display element, and a step of separating the layer to be separated and the substrate from each other. A step of forming a conductive layer over the first resin layer in a position overlapping with the second region is included in the step of forming the layer to be separated.
    Type: Grant
    Filed: May 11, 2017
    Date of Patent: July 6, 2021
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Masakatsu Ohno, Seiji Yasumoto, Naoto Goto, Hiroki Adachi
  • Patent number: 11054858
    Abstract: A structure suitable for a portable information terminal or a wearable device is provided. In addition, an electronic device having a novel structure that can have various forms is provided. It is preferable that a buffer layer which absorbs a difference in the amount of change in form be provided between adjacent film substrates which overlap with each other. As the buffer layer, a gelled resin material, a rubber resin material, a liquid material, an air layer, or the like can be used. Furthermore, an optical film such as a polarizing film or a color filter may be used as the buffer layer. A plurality of buffer layers may be provided in an electronic device.
    Type: Grant
    Filed: October 29, 2020
    Date of Patent: July 6, 2021
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Masaaki Hiroki, Daisuke Furumatsu
  • Patent number: 11056491
    Abstract: A semiconductor device that can be highly integrated is provided. The semiconductor device includes a transistor, an interlayer film, and a first conductor. The transistor includes an oxide over a first insulator; a second conductor over the oxide; a second insulator provided between the oxide and the second conductor and in contact with a side surface of the second conductor; and a third insulator provided for the side surface of the second conductor with the second insulator therebetween. The oxide includes a first region, a second region, and a third region. The first region overlaps with the second conductor. The second region is provided between the first region and the third region. The third region has a lower resistance than the second region. The second region has a lower resistance than the first region. The interlayer film is provided over the first insulator and the oxide. The first conductor is electrically connected to the third region.
    Type: Grant
    Filed: June 19, 2018
    Date of Patent: July 6, 2021
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Daisuke Matsubayashi, Tatsuya Onuki
  • Patent number: 11056678
    Abstract: An object is to suppress electrochemical decomposition of an electrolyte solution and the like at a negative electrode in a lithium ion battery or a lithium ion capacitor: thus, irreversible capacity is reduced, cycle performance is improved, or operating temperature range is extended. A negative electrode for a power storage device including a negative electrode current collector, a negative electrode active material layer which is over the negative electrode current collector and includes a plurality of particles of a negative electrode active material, and a film covering part of the negative electrode active material. The film has an insulating property and lithium ion conductivity.
    Type: Grant
    Filed: April 15, 2019
    Date of Patent: July 6, 2021
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Nobuhiro Inoue, Sachiko Kataniwa, Kazutaka Kuriki, Junpei Momo
  • Patent number: 11056516
    Abstract: Disclosed is a power storage element including a positive electrode current collector layer and a negative electrode current collector layer which are arranged on the same plane and can be formed through a simple process. The power storage element further includes a positive electrode active material layer on the positive electrode current collector layer; a negative electrode active material layer on the negative electrode current collector layer; and a solid electrolyte layer in contact with at least the positive electrode active material layer and the negative electrode active material layer. The positive electrode active material layer and the negative electrode active material layer are formed by oxidation treatment.
    Type: Grant
    Filed: September 3, 2019
    Date of Patent: July 6, 2021
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Kazutaka Kuriki, Ryota Tajima, Tamae Moriwaka
  • Publication number: 20210202745
    Abstract: A semiconductor device which has favorable electrical characteristics is provided. A method for manufacturing a semiconductor device with high productivity is provided. A method for manufacturing a semiconductor device with a high yield is provided.
    Type: Application
    Filed: February 22, 2021
    Publication date: July 1, 2021
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Yasutaka NAKAZAWA, Yukinori SHIMA, Kenichi OKAZAKI, Junichi KOEZUKA, Shunpei YAMAZAKI
  • Publication number: 20210202866
    Abstract: A light-emitting element which includes a plurality of light-emitting layers between a pair of electrodes and has low driving voltage and high emission efficiency is provided. A light-emitting element including first to third light-emitting layers between a cathode and an anode is provided. The first light-emitting layer includes a first phosphorescent material and a first electron-transport material; the second light-emitting layer includes a second phosphorescent material and a second electron-transport material; the third light-emitting layer includes a fluorescent material and a third electron-transport material; the first to third light-emitting elements are provided in contact with an electron-transport layer positioned on a cathode side; and a triplet excitation energy level of a material included in the electron-transport layer is lower than triplet excitation energy levels of the first electron-transport material and the second electron-transport material.
    Type: Application
    Filed: March 11, 2021
    Publication date: July 1, 2021
    Applicant: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Tsunenori Suzuki, Naoaki HASHIMOTO, Eriko SAIJO, Satoshi SEO
  • Patent number: 11050032
    Abstract: A light-emitting element that includes a fluorescent material and has a high emission efficiency is provided. A light-emitting element in which a delayed fluorescence component due to TTA accounts for a high proportion of emissive components is provided. A novel light-emitting device with a high emission efficiency and a low power consumption is provided. A light-emitting element includes an anode, a cathode, and an EL layer. The EL layer includes a light-emitting layer including a host material and an electron-transport layer including a first material in contact with the light-emitting layer. The LUMO level of the first material is lower than that of the host material. The proportion of a delayed fluorescence component due to TTA is greater than or equal to 10 percent of the light emission from the EL layer. The proportion of the delayed fluorescence component due to TTA may be greater than or equal to 15 percent of the light emission.
    Type: Grant
    Filed: February 14, 2020
    Date of Patent: June 29, 2021
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Naoaki Hashimoto, Tsunenori Suzuki, Satoshi Seo, Hiromi Seo, Hiromitsu Kido
  • Patent number: 11049733
    Abstract: In a transistor including an oxide semiconductor layer, an oxide insulating layer is formed so as to be in contact with the oxide semiconductor layer. Then, oxygen is introduced (added) to the oxide semiconductor layer through the oxide insulating layer, and heat treatment is performed. Through these steps of oxygen introduction and heat treatment, impurities such as hydrogen, moisture, a hydroxyl group, or hydride are intentionally removed from the oxide semiconductor layer, so that the oxide semiconductor layer is highly purified.
    Type: Grant
    Filed: May 23, 2019
    Date of Patent: June 29, 2021
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Junichi Koezuka
  • Patent number: 11048135
    Abstract: It is an object of the present invention to apply a sufficient electrical field to a liquid crystal material in a horizontal electrical field liquid crystal display device typified by an FFS type. In a horizontal electrical field liquid crystal display, an electrical field is applied to a liquid crystal material right above a common electrode and a pixel electrode using plural pairs of electrodes rather than one pair of electrodes. One pair of electrodes includes a comb-shaped common electrode and a comb-shaped pixel electrode. Another pair of electrodes includes a common electrode provided in a pixel portion and the comb-shaped pixel electrode.
    Type: Grant
    Filed: September 24, 2020
    Date of Patent: June 29, 2021
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Hajime Kimura, Hideki Uochi
  • Patent number: 11049977
    Abstract: An object is to provide a material suitably used for a semiconductor included in a transistor, a diode, or the like. Another object is to provide a semiconductor device including a transistor in which the condition of an electron state at an interface between an oxide semiconductor film and a gate insulating film in contact with the oxide semiconductor film is favorable. Further, another object is to manufacture a highly reliable semiconductor device by giving stable electric characteristics to a transistor in which an oxide semiconductor film is used for a channel. A semiconductor device is formed using an oxide material which includes crystal with c-axis alignment, which has a triangular or hexagonal atomic arrangement when seen from the direction of a surface or an interface and rotates around the c-axis.
    Type: Grant
    Filed: September 13, 2018
    Date of Patent: June 29, 2021
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Motoki Nakashima, Tatsuya Honda