Patents Assigned to Semiconductor Energy Laboratory Co., Ltd.
  • Patent number: 11044538
    Abstract: To provide an environmental sensor with reduced power consumption. A semiconductor device includes a first sensor, a second sensor, a control circuit, a transmission amplifier, a modulation circuit, a memory device, an analog-to-digital converter circuit, and an antenna. The memory device and the analog-to-digital converter circuit each include a transistor in which an oxide semiconductor is formed in a channel region. The second sensor is an optical sensor, and has a function of transmitting a trigger signal to the control circuit when receiving laser light. The control circuit has a function of transmitting a control signal to the first sensor, the transmission amplifier, the modulation circuit, the memory device, and the analog-to-digital converter circuit when receiving the trigger signal. The first sensor is a sensor that senses a physical or chemical quantity, and the measured data is subjected to digital conversion by the analog-to-digital converter circuit and stored in the memory device.
    Type: Grant
    Filed: September 24, 2018
    Date of Patent: June 22, 2021
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventor: Jun Koyama
  • Patent number: 11043509
    Abstract: Photolithography and etching steps for forming an island-shaped semiconductor layer are omitted, and a liquid crystal display device is manufactured with four photolithography steps: a step of forming a gate electrode (including a wiring formed using the same layer as the gate electrode), a step of forming source and drain electrodes (including a wiring formed using the same layer as the source and drain electrodes), a step of forming a contact hole (including the removal of an insulating layer and the like in a region other than the contact hole), and a step of forming a pixel electrode (including a wiring formed using the same layer as the pixel electrode). By the reduction in the number of photolithography steps, a liquid crystal display device can be provided at low cost and high productivity. Formation of a parasitic channel is prevented by an improvement in shape and potential of a wiring.
    Type: Grant
    Filed: December 28, 2018
    Date of Patent: June 22, 2021
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventor: Jun Koyama
  • Patent number: 11043637
    Abstract: A light-emitting element having a long lifetime is provided. A light-emitting element exhibiting high emission efficiency in a high luminance region is provided. A light-emitting element includes a light-emitting layer between a pair of electrodes. The light-emitting layer contains a first organic compound, a second organic compound, and a phosphorescent compound. The first organic compound is represented by a general formula (G0). The molecular weight of the first organic compound is greater than or equal to 500 and less than or equal to 2000. The second organic compound is a compound having an electron-transport property. In the general formula (G0), Ar1 and Ar2 each independently represent a fluorenyl group, a spirofluorenyl group, or a biphenyl group, and Ar3 represents a substituent including a carbazole skeleton.
    Type: Grant
    Filed: August 20, 2018
    Date of Patent: June 22, 2021
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Takao Hamada, Hiromi Seo, Kanta Abe, Kyoko Takeda, Satoshi Seo
  • Patent number: 11043186
    Abstract: A method for transmitting image data to a display device at high speed is provided. Image data to be transmitted is input to a phase modulation portion, and is mixed with a high-frequency carrier wave. The carrier wave is modulated with a technique of phase-shift keying, and output to a transmission line determined in consideration of the transmission characteristics of the high-frequency wave. A phase regulating portion of the phase modulation portion has a function of adjusting the amount of change in phase with the use of an electric signal. A phase demodulation portion beyond the transmission line demodulates the modulated carrier wave and extracts the image data. The multi-bit image data can be transmitted by the technique of the phase-shift keying. The high-speed transmission enables serial conversion of the original image data and decreases the number of transmission lines.
    Type: Grant
    Filed: October 24, 2017
    Date of Patent: June 22, 2021
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Hitoshi Kunitake, Yoshiyuki Kurokawa
  • Patent number: 11043543
    Abstract: A thin touch panel is provided. A touch panel with a simple structure is provided. The number of components of a touch panel is reduced. Each of a pair of wirings of a touch sensor is positioned closer to a substrate supporting light-emitting elements than a common electrode is, and includes a portion positioned between two adjacent pixel electrodes in a plan view. Furthermore, an island-like structure body with an inverse tapered shape is provided over each of the pair of wirings. A conductive layer in an electrically floating state is provided over the structure body. Each conductive layer has a portion overlapping with one of the pair of wirings. Moreover, the conductive layer and the common electrode are formed using the same conductive film.
    Type: Grant
    Filed: June 21, 2016
    Date of Patent: June 22, 2021
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Kensuke Yoshizumi, Hideaki Shishido, Kazunori Watanabe
  • Patent number: 11043851
    Abstract: An electronic device earned around by the user is desired to be used for a long period. In order to achieve this, a high-capacity battery may be incorporated. Since a high-capacity battery is large, its incorporation in an electronic device increases the weight of the electronic device. An electronic device used while being implanted in the body of the user, provided with an emergency power supply, is provided, in an electronic device provided with a plurality of batteries, a transmitting portion and a receiving portion conduct wireless charging among different batteries, and the battery to be charged or used is selected by a power supply management circuit depending on the circumstances.
    Type: Grant
    Filed: December 4, 2019
    Date of Patent: June 22, 2021
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventor: Shunpei Yamazaki
  • Publication number: 20210184150
    Abstract: A light-emitting element is provided, including a first electrode and a second electrode, a first layer including first and second organic compounds, the first layer being formed between the first electrode and the second electrode wherein the first organic compound is capable of emitting a first light and the second organic compound has an electron transporting property, and a second layer including third and fourth organic compounds, the second layer being formed between the first layer and the second electrode wherein the third organic compound is capable of emitting a second light and has an electron trap property and the fourth organic compound has an electron transporting property.
    Type: Application
    Filed: February 25, 2021
    Publication date: June 17, 2021
    Applicant: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Tsunenori Suzuki, Satoshi Seo
  • Publication number: 20210184130
    Abstract: A novel organic compound with favorable thermophysical properties is provided. An organic compound represented by General Formula (G1) is provided. At least one of X1 to X5 is a secondary or tertiary alkyl group having 3 to 6 carbon atoms in which a carbon atom bonded to a phenyl group branches. Each of R1 to R7 is independently any of hydrogen, an alkyl group having 1 to 6 carbon atoms, a cycloalkyl group having 3 to 12 carbon atoms, and an unsubstituted or alkyl-substituted aryl group having 6 to 13 carbon atoms. Ar1 represents a substituted or unsubstituted condensed heteroaromatic ring skeleton having 8 to 60 carbon atoms and composed of two or more aromatic rings, and Ar2 represents a substituted or unsubstituted aryl group having 6 to 25 carbon atoms. Furthermore, n is any of 1 to 3.
    Type: Application
    Filed: December 9, 2020
    Publication date: June 17, 2021
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Kyoko TAKEDA, Harue OSAKA, Hiroshi KADOMA, Satoshi SEO, Tsunenori SUZUKI, Naoaki HASHIMOTO
  • Publication number: 20210183860
    Abstract: A novel semiconductor device is provided. A semiconductor device includes a plurality of cell arrays and a plurality of peripheral circuits. The cell array includes a plurality of memory cells. The peripheral circuit includes a first driver circuit, a second driver circuit, a first amplifier circuit, a second amplifier circuit, a third amplifier circuit, and a fourth amplifier circuit. The first driver circuit and the second driver circuit each have a function of supplying a selection signal to the cell array. The first amplifier circuit and the second amplifier circuit each have a function of amplifying a potential input from the cell array. The third amplifier circuit and the fourth amplifier circuit each have a function of amplifying a potential input from the first amplifier circuit or the second amplifier circuit.
    Type: Application
    Filed: April 11, 2019
    Publication date: June 17, 2021
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Shunpei YAMAZAKI, Kiyoshi KATO, Tatsuya ONUKI, Takanori MATSUZAKI
  • Publication number: 20210181561
    Abstract: A display device capable of improving image quality is provided. A display device includes a plurality of pixel blocks in a display region. The pixel blocks each include a first circuit and a plurality of second circuits. The first circuit has a function of adding a plurality of pieces of data supplied from a source driver. The second circuit includes a display element and has a function of performing display in accordance with the added data. One pixel has a configuration including one second circuit and an component of the first circuit that is shared. When the first circuit is shared by a plurality of pixels, the aperture ratio can be increased.
    Type: Application
    Filed: April 19, 2019
    Publication date: June 17, 2021
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Susumu KAWASHIMA, Naoto KUSUMOTO
  • Patent number: 11037513
    Abstract: It is an object to provide a display device which can favorably display a image without delayed or distorted signals. The display device includes a first gate driver and a second gate driver. The first gate driver and the second gate driver each include a plurality of flip flop circuits and a plurality of transfer signal generation circuits. Both the flip flop circuit and the transfer signal generation circuit are circuits which output a signal inputted to a first input terminal with a half clock cycle delay. In addition, an output terminal of the transfer signal generation circuit is directly connected to a first input terminal of the flip flop circuit in the next stage. Therefore, delay and distortion of the signal which is inputted from the transfer signal generation circuit to the flip flop circuit can be reduced.
    Type: Grant
    Filed: March 13, 2020
    Date of Patent: June 15, 2021
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventor: Atsushi Umezaki
  • Patent number: 11037622
    Abstract: A semiconductor device whose operating speed is increased is provided. The semiconductor device includes a write word line, a read word line, a write bit line, a read bit line, a first wiring, and a memory cell. The memory cell includes three transistors of a single conductivity type and a capacitor. Gates of the three transistors are electrically connected to the write word line, a first terminal of the capacitor, and the read word line, respectively. A second terminal of the capacitor is electrically connected to the read bit line. A source and a drain of one transistor are electrically connected to the write bit line and the gate of another transistor, respectively. Two of the three transistors are electrically connected in series between the read bit line and the first wiring. A channel formation region of each of the three transistors includes, for example, a metal oxide layer.
    Type: Grant
    Filed: November 12, 2018
    Date of Patent: June 15, 2021
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Tomoaki Atsumi, Kiyoshi Kato, Shuhei Maeda
  • Patent number: 11038134
    Abstract: A light-emitting element containing a fluorescent material and having high emission efficiency is provided. The light-emitting element contains the fluorescent material and a host material. The host material contains a first organic compound and a second organic compound. The first organic compound and the second organic compound can form an exciplex. The minimum value of a distance between centroids of the fluorescent material and at least one of the first organic compound and the second organic compound is 0.7 nm or more and 5 nm or less.
    Type: Grant
    Filed: October 8, 2019
    Date of Patent: June 15, 2021
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunsuke Hosoumi, Takahiro Ishisone, Tatsuyoshi Takahashi, Satoshi Seo
  • Patent number: 11038065
    Abstract: The transistor includes a first gate electrode, a first insulating film over the first gate electrode, an oxide semiconductor film over the first insulating film, a source electrode over the oxide semiconductor film, a drain electrode over the oxide semiconductor film, a second insulating film over the oxide semiconductor film, the source electrode, and the drain electrode, and a second gate electrode over the second insulating film. The first insulating film includes a first opening. A connection electrode electrically connected to the first gate electrode through the first opening is formed over the first insulating film. The second insulating film includes a second opening that reaches the connection electrode. The second gate electrode includes an oxide conductive film and a metal film over the oxide conductive film. The connection electrode and the second gate electrode are electrically connected to each other through the metal film.
    Type: Grant
    Filed: December 5, 2019
    Date of Patent: June 15, 2021
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Yoshiaki Oikawa, Nobuharu Ohsawa, Masami Jintyou, Yasutaka Nakazawa
  • Patent number: 11038207
    Abstract: Provided is a power storage device whose charging and discharging characteristics are unlikely to be degraded by heat treatment or a power storage device that is highly safe against heat treatment. The power storage device includes a positive electrode, a negative electrode, a separator, an electrolyte, and an exterior body. The separator is positioned between the positive electrode and the negative electrode and includes polyphenylene sulfide or cellulosic fiber. The electrolyte includes propylene carbonate, ethylene carbonate, and vinylene carbonate, lithium hexafluorophosphate, and lithium bis(pentafluoroethanesulfonyl)amide. A concentration of lithium hexafluorophosphate with respect to the electrolyte is more than or equal to 0.01 wt % and less than or equal to 1.9 wt % in a weight ratio.
    Type: Grant
    Filed: November 22, 2017
    Date of Patent: June 15, 2021
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Kazuhei Narita, Ryota Tajima
  • Patent number: 11037964
    Abstract: A semiconductor device having a configuration hardly generating variations in the current value due to a deteriorated EL element is to be provided. A capacitance element is disposed between the gate and the source of a driving TFT, video signals are inputted to the gate electrode, and then it is in the floating state. Suppose an EL element is deteriorated and the anode potential rises, that is, the source potential of the driving TFT rises, the potential of the gate electrode of the driving TFT, being in the floating state by coupling of the capacitance element, is to rise by the same amount. Accordingly, even when the anode potential rises due to the deteriorated EL element, the rise is added to the gate electrode potential as it is, and the gate-source voltage of the driving TFT is allowed to be constant.
    Type: Grant
    Filed: November 7, 2018
    Date of Patent: June 15, 2021
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventor: Hajime Kimura
  • Patent number: 11036324
    Abstract: A touch panel including an oxide semiconductor film having conductivity is provided. The touch panel includes a transistor, a second insulating film, and a touch sensor. The transistor includes a gate electrode; a gate insulating film; a first oxide semiconductor film; a source electrode and a drain electrode; a first insulating film; and a second oxide semiconductor film. The second insulating film is over the second oxide semiconductor film so that the second oxide semiconductor film is positioned between the first insulating film and the second insulating film. The touch sensor includes a first electrode and a second electrode. One of the first and second electrodes includes the second oxide semiconductor film.
    Type: Grant
    Filed: March 26, 2020
    Date of Patent: June 15, 2021
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Hajime Kimura, Masami Jintyou, Yasuharu Hosaka, Naoto Goto, Takahiro Iguchi, Daisuke Kurosaki, Junichi Koezuka
  • Patent number: 11038135
    Abstract: Provided is a light-emitting element with high external quantum efficiency, or a light-emitting element with a long lifetime. The light-emitting element includes, between a pair of electrodes, a light-emitting layer including a guest material and a host material, in which an emission spectrum of the host material overlaps with an absorption spectrum of the guest material, and phosphorescence is emitted by conversion of an excitation energy of the host material into an excitation energy of the guest material. By using the overlap between the emission spectrum of the host material and the absorption spectrum of the guest material, the energy smoothly transfers from the host material to the guest material, so that the energy transfer efficiency of the light-emitting element is high. Accordingly, a light-emitting element with high external quantum efficiency can be achieved.
    Type: Grant
    Filed: February 25, 2019
    Date of Patent: June 15, 2021
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Satoko Shitagaki, Satoshi Seo, Nobuharu Ohsawa, Hideko Inoue, Masahiro Takahashi, Kunihiko Suzuki
  • Publication number: 20210175429
    Abstract: A light-emitting element includes a light-emitting layer including a guest, an n-type host and a p-type host between a pair of electrodes, where the difference between the energy difference between a triplet excited state and a ground state of the n-type host (or p-type host) and the energy difference between a triplet excited state and a ground state of the guest is 0.15 eV or more. Alternatively, in such a light-emitting element, the LUMO level of the n-type host is higher than the LUMO level of the guest by 0.1 eV or more, or the HOMO level of the p-type host is lower than the HOMO level of the guest by 0.1 eV or more.
    Type: Application
    Filed: February 18, 2021
    Publication date: June 10, 2021
    Applicant: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Satoshi Seo, Nobuharu Ohsawa, Satoko Shitagaki, Hideko Inoue, Hiroshi Kadoma, Harue Osaka, Kunihiko Suzuki, Yasuhiko Takemura
  • Publication number: 20210175235
    Abstract: A semiconductor device including a first oxide including a first region and a second region adjacent to each other and a third region and a fourth region with the first region and the second region sandwiched between the third region and the fourth region, a second oxide over the first region, a first insulator over the second oxide, a first conductor over the first insulator, a second insulator over the second oxide and on side surfaces of the first insulator and the first conductor, a third insulator over the second region and on a side surface of the second insulator, a second conductor over the second region with the third insulator positioned between the second region and the second conductor and on the side surface of the second insulator with the third insulator positioned between the side surface of the second insulator and the second conductor, and a fourth insulator covering the first oxide, the second oxide, the first insulator, the first conductor, the second insulator, the third insulator, and th
    Type: Application
    Filed: February 10, 2021
    Publication date: June 10, 2021
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Shunpei YAMAZAKI, Yuta ENDO, Shuhei NAGATSUKA