Abstract: A 4-T SRAM cell in which two layers of permanent SOG (with an intermediate oxide layer) are used to provide planarization between the first and topmost poly layers.

Abstract: A gate structure in a transistor and method for fabricating the structure. A gate structure is formed on a substrate. The gate structure includes three layers: an oxide layer, a nitride layer and a polysilicon layer. The oxide layer is located on the substrate, the nitride layer is located on the oxide layer, and the polysilicon layer is located on the nitride layer. The gate structure is reoxidized to form a layer of oxide over the gate structure.

Abstract: According to the present invention, when faulty data bits in a cache memory are not repairable through conventional repair means such as row/column redundancy, the faulty bits are made inaccessible to the microprocessor by rendering invalid an appropriate line of data in the cache memory containing the faulty data. The present invention employs address detection circuitry which detects when a faulty data address stored in the tag RAM is presented during a microprocessor memory cycle and forces the valid bit for that faulty data to a predetermined logic level. When the valid bit associated with the faulty data is set to the predetermined logic level, the tag RAM generates a signal indicative of a "miss" condition. The "miss condition" is communicated to the microprocessor which must access the requested data from main memory, thus effectively bypassing the faulty data. The address detection circuitry of the invalidation circuitry may be expanded to handle any number of faulty data.

Abstract: A protection structure and method are provided for protecting a first pad of an integrated circuit, the integrated circuit having a second pad to receive a first supply voltage. The protection structure includes a first region of a first conductivity type coupled to the first pad; a second region of a second conductivity type coupled to the second pad; a substrate of the second conductivity type contacting the first and second regions; and an epitaxial layer of the first conductivity type. The epitaxial layer has an epitaxial region that contacts the first and second regions. A first diode can be formed outside the substrate between the first and second pads through at least two of the first region, the second region, and the epitaxial region. The protection structure may include a first portion and a second portion, wherein each portion has a different voltage threshold. Accordingly, the first diode can be formed through the second portion, but not the first portion.

Abstract: A complementary-metal-oxide-semiconductor, static-random-access-memory cell has two pairs of n-channel and p-channel transistors in complementary symmetry, push-pull arrangement. One pair of complementary transistors stores the binary state of the memory cell, and the other pair of complementary transistors stores the complement of the binary state of the memory cell. Both transistors in each of the complementary pairs of complementary transistors in the memory cell have nearly equal current carrying capacity and provide a voltage trip point for a change of state of the memory cell equal to approximately 1/2 the bias voltage across the memory cell. Complementary word lines and bit lines select a memory cell for reading or writing. The wordline control gates have complementary transistors, and those complementary transistors push or pull current to the memory cell in parallel to minimize the effect of transistor threshold voltage on the flow of current to the complementary transistors in the memory cell.

Abstract: An integrated circuit having a normal operating mode and a special operating mode, such as a special test mode, is disclosed. The special test mode is enabled by a series of signals, such as overvoltage excursions at a terminal, rather than by a single such excursion, so that it is less likely that the special test mode is entered inadvertently, such as due to noise or power-down and power-up of the device. The circuit for enabling the test mode includes a series of D-type flip-flops, each of which are clocked upon detection of the overvoltage condition together with a particular logic level applied at another terminal; multiple series of flip-flops may be provided for multiple special test modes. Additional features include the provision of a power-on reset circuit which locks out the entry into the test mode during power-up of the device.

Abstract: A low power, low voltage level shifter is provided. The voltage level shifter includes a first switching circuit, and a second switching circuit. The first switching circuit has a first input terminal for receiving a first oscillating signal, and based on the first oscillating signal, switches the output of the first switching circuit between a first voltage level and a second voltage level. The second switching circuit has a second input terminal connected to the output terminal of the first switching circuit. The second switching circuit also has a third input terminal for receiving a second oscillating signal which is out of phase with the first oscillating signal. Based on the input signals received, the second switching circuit generates an output signal that switches between a third voltage level and a fourth voltage level at a selected rate and frequency.

Abstract: A semiconductor device includes an insulating support. A strip of semiconductor material has two ends in contact with the insulating support and a midsection extending between the ends. A dielectric layer encircles the midsection, and a conductive layer encircles the dielectric layer. The conductive layer has a substantially constant width such that a gate electrode formed within the conductive layer is fully self-aligned with drain and source regions formed within the ends.

Abstract: A method is provided for forming an improved landing pad of a semiconductor integrated circuit, and an integrated circuit formed according to the same. A first opening is formed through a first dielectric layer to expose a portion of a diffused region. A first polysilicon landing pad is formed over the first dielectric layer and in the opening. This landing pad will provide for smaller geometries and meet stringent design rules such as that for contact space to gate. A dielectric pocket is formed over the polysilicon landing pad over the active region. A second conductive landing pad is formed over the polysilicon landing pad and the dielectric pocket. A second dielectric layer is formed over the landing pad having a second opening therethrough exposing a portion of the landing pad. A conductive contact, such as aluminum, is formed in the second contact opening. The conductive contact will electrically connect with the diffused region through the landing pad.

Abstract: A method is provided for forming an improved landing pad of a semiconductor integrated circuit, and an integrated circuit formed according to the same. A first opening is formed through a first dielectric layer to expose a portion of a diffused region. A first polysilicon landing pad is formed over the first dielectric layer and in the opening. This landing pad will provide for smaller geometries and meet stringent design rules such as that for contact space to gate. A dielectric pocket is formed over the polysilicon landing pad over the active region. A second conductive landing pad is formed over the polysilicon landing pad and the dielectric pocket. A second dielectric layer is formed over the landing pad having a second opening therethrough exposing a portion of the landing pad. A conductive contact, such as aluminum, is formed in the second contact opening. The conductive contact will electrically connect with the diffused region through the landing pad.

Abstract: An integrated circuit includes test circuitry and test mode enable circuitry. During power-up, an over-voltage on a package pin of the integrated circuit can initiate a test mode. The test mode enable signal may be latched into its activity state by a signal provided on a second package pin. Thereafter, the first and second package pins may be used in the normal voltage range during the test operations.

Abstract: According to the present invention, the data access time of a chip select condition of a synchronized memory integrated circuit device is pipelined so that it approximates the normal access time of data for the device. The response time to the chip enable signal during a deselect condition is immediate and thus is not pipelined. The access time of data due to a chip select condition is pipelined and matched with the normal access time of data propagation so that any access time pushout previously incurred when transitioning the device output signal from a high impedance (disabled) to a low impedance (enabled) state is eliminated. The circuitry of the present invention tri-states the output pin of the synchronized memory device on the initial rising edge of an external clock signal supplied to the device upon a deselect condition. Upon the first cycle of the select condition, when the external clock signal initially rises, an Output Disable Internal signal remains a high logic state.

Abstract: An innovative disk drive system which provides a regulated bias current to a magnetoresistive read head, and controls the voltage of the magnetoresistive read head terminals so that the CENTER of the resistor is at ground. This halves the peak magnitude of the head-to-disk voltage.

Abstract: A passivation structure is formed using two passivation layers and a protective overcoat layer using two masking steps. The first passivation layer is formed over the wafer and openings are provided to expose portions of the pads for testing the device and fusible links. After testing and laser repair, a second passivation layer is formed over the wafer followed a deposit of the protective overcoat. The protective overcoat is patterned and etched, exposing the pads. The remaining portions of the protective overcoat are used as a mask to remove portions of the second passivation layer overlying the pads. Leads are then attached to pads and the devices are encapsulated for packaging.

Abstract: A passivation structure is formed using two passivation layers and a protective overcoat layer using two masking steps. The first passivation layer is formed over the wafer and openings are provided to expose portions of the pads for testing the device and fusible links. After testing and laser repair, a second passivation layer is formed over the wafer followed a deposit of the protective overcoat. The protective overcoat is patterned and etched, exposing the pads. The remaining portions of the protective overcoat are used as a mask to remove portions of the second passivation layer overlying the pads. Leads are then attached to pads and the devices are encapsulated for packaging.

Abstract: An innovative circuit for driving the write head. All of the driving transistors are NPN, and are prevented from saturation. This is achieved by shifting and scaling down the differential drive applied to the pull-up transistors, to drive the pull-down transistors with levels such that the pull-down transistors cannot reach saturation. This provides a very simple circuit in which all four of the drive transistors are NPN, and all are kept out of saturation. Moreover, the peak write current applied to the head is precisely limited.

Abstract: A method for creating isolation structures in a substrate without having to increase the field implant doses to prevent punch through. This particular advantage is achieved by first growing a pad oxide on the substrate. Polysilicon is deposited on top of the pad oxide layer. Next, silicon nitride, used for masking, is deposited on the polysilicon layer. An opening, also called an isolation space, is etched into the three layers, exposing part of the substrate. A first field oxide is grown in the opening. This first field oxide layer is etched to expose a portions of the substrate along the edge of the field oxide region. Then, trenches are etched into the exposed portions of the substrate, and field implantation of dopants is performed. After implantation, a second field oxide layer is grown. The silicon nitride, polysilicon, and pad oxide are then removed, resulting in the isolation structure of the present invention.

Abstract: A short circuit protection circuit which has a first short circuit protection circuit in parallel with a second short circuit protection circuit is disclosed. The first short circuit protection circuit includes a sense resistor and a comparator for detecting the short circuit, and a transistor and current source for turning off the low side driver when the short circuit is detected. The second short circuit protection circuit includes a current mirror, zener diode, transistor, and current source connected in series. The second short circuit protection circuit is in parallel with the first short circuit protection circuit. The second short circuit protection circuit accelerates the turn-off of the low-side driver with out affecting the stability of the circuit.

Abstract: An integrated circuit package with a path of high thermal conductivity is disclosed. A thermally conductive slug, formed of a material such as copper, is attached to an underside portion of a substrate, such as a printed circuit board or a ceramic substrate, through which an opening has been formed. An integrated circuit chip is mounted to one side of the slug exposed in the opening. An opposing surface of the slug lies below the plane of the underside of the substrate. The chip is wire bonded to the substrate, and is encapsulated in the conventional manner. Solder balls are attached to a portion of the underside of the substrate not covered by the slug in a ball-grid-array manner, for mounting to a circuit board. Upon mounting to the circuit board, a path of high thermal conductivity is provided between the chip and the circuit board, through the slug and the solder balls.

Abstract: A memory device includes an address decoder, a global data line, and a plurality of memory blocks, which are each coupled to the address decoder and the global data line. Each memory block includes a plurality of column lines, a local data line, and a plurality of memory cells that are arranged in columns and are each coupled to a corresponding one of the column lines. Each memory block also includes or has associated therewith a switching circuit that is coupled to the column lines and the local data line. The switching circuit couples a selected column line to the local data line and couples the local data line to the global data line when the memory block is selected. The switching circuit uncouples each of the column lines from the local data line when the memory block is unselected, or during a read cycle when the memory block is selected and the sense-amplifier is enabled.