Abstract: Provided is a charging detection circuit, a charging case and a communication apparatus of charging. The charging detection circuit includes: a first touch point, a second touch point, a switching circuit, a charging circuit, a detecting circuit and a first communication circuit, where the switching circuit is connected to the first touch point; the charging circuit is connected to the detecting circuit via the second touch point; the first communication circuit is connected to the first touch point and/or the second touch point; when a supply voltage of the first touch point is a system voltage, and the first touch point and the second touch point are both in contact with a first device, the detecting circuit triggers the first communication circuit to acquire a state of charge of the first device.

Abstract: Embodiments of the present application provide a memristor electrode material preparation method and apparatus, and a memristor electrode material. The preparation method includes: depositing a metal nitride on a substrate by a reactive sputtering process to obtain a metal nitride substrate; and subjecting the metal nitride substrate to laser annealing treatment in a nitrogen-containing atmosphere to nitride an unreacted metal on the metal nitride substrate, so as to obtain a memristor electrode material.

Abstract: An embodiment of the present application relates to a trench capacitor and a method for manufacturing the same. The method for manufacturing the capacitor includes: fabricating a trench reaching a depth of a middle insulating layer on a semiconductor layer of an SOI substrate; and further growing an epitaxial layer of the semiconductor layer on a sidewall of the trench by selective epitaxial growth technology so as to further reduce a width of the trench; filling the trench with an electrically insulating material; and finally, fabricating two electrodes of the capacitor separately through a surface electrode. According to a trench capacitor and a method for manufacturing the same provided in an embodiment of the present application, a process flow is simple, and the capacitor manufactured has two advantages of high capacitance density and high breakdown voltage.

Abstract: The present disclosure relates to touch technology, and provides a method for preventing an edge from being unintentionally touched, a touch control apparatus and a storage medium. The method comprises: acquiring touch data of a touch screen in real time; judging whether there is any edge touch operation according to the touch data; calculating a coordinate point movement track of the edge touch operation according to the touch data if there is an edge touch operation; judging whether the edge touch operation is an edge mis-operation according to the touch data and the coordinate point movement track; and suppressing the edge mis-operation if the edge touch operation is an edge mis-operation. With embodiments of the present disclosure, accuracy of edge mis-operation recognition is improved while ensuring a normal response of an edge region of a screen.

Abstract: A capacitor is disclosed, including: a semiconductor substrate including opposite upper and lower surfaces; one first trench disposed in the semiconductor substrate and formed downward from the upper surface; one second trench disposed in the substrate and corresponding to the first trench, and formed upward from the lower surface; a first conductive layer disposed above the substrate and in the first trench; a first insulating layer disposed between the substrate and the first conductive layer; a second conductive layer disposed on the substrate and in the first trench, the second conductive layer being electrically connected to the substrate; a second insulating layer disposed between the second conductive layer and the first conductive layer; a third conductive layer disposed below the substrate and in the second trench; and a third insulating layer disposed between the third conductive layer and the substrate, which is electrically connected to the first conductive layer.

Abstract: A method for fabricating a double-sided capacitor is disclosed, which includes: etching trenches having depths not reaching an intermediate insulating layer and trench structures having depths exceeding the intermediate insulating layer on both sides of a silicon-on-insulator (SOI) substrate; and sequentially depositing an insulating dielectric film and a conductive material on surfaces of the trenches and the trenches, then removing insulating material at a bottom of the trenches and the trenches are filled with the conductive material to form conductive channels. The upper conductive channel of the SOI substrate is insulated from an upper layer and is electrically connected to a lower layer; and the lower conductive channel is insulated from the lower layer and is electrically connected to the upper layer.

Abstract: An e-fuse and a manufacturing method thereof, and a memory cell are provided. The method includes: providing a semiconductor substrate including a preset active region; forming an isolating region on the substrate, where the isolating region and the preset active region have a height difference and are connected by at least one side wall; forming a negative electrode and a positive electrode on the preset active region; and forming a fuse link on the side wall for connecting the negative electrode and the positive electrode. Accordingly, the line width of the fuse link is out of the limitation of the limit line width of the semiconductor process, the actual line width of the e-fuse may be smaller than the limit line width of the semiconductor process, and low fusing current is required for fusing.

Abstract: An optical path modulator, applied to a fingerprint identification apparatus, is configured to direct reflected light reflected back from a surface of a finger to an optical detection unit disposed below the optical path modulator, and the optical detection unit is configured to detect the received reflected light, where an array of through holes is arranged between an upper surface and a lower surface of the optical path modulator, and the array of through holes includes a plurality of tilt through holes, where each tilt through hole has a tilt angle greater than 0°, and the tilt angle is an angle between an axial direction of the tilt through hole and a normal direction perpendicular to a surface of the optical path modulator. In a case of the same hole depth, a thinner optical path modulator can be obtained.

Abstract: A capacitor and a method of fabricating the capacitor are provided. The capacitor includes a structure for forming a three-dimensional capacitor, the structure being a pillar structure or a trench structure; where when the structure is a pillar structure, the aspect ratio of the pillar structure is more than 10; when the structure is a trench structure, the capacitor further includes a substrate, the trench structure is formed by a material layer disposed on the surface of a base trench of the substrate, and the aspect ratio of the trench structure is more than 10. The aspect ratio of the pillar structure of the capacitor or the aspect ratio of the trench structure may be more than 10, so that the performance of the capacitor is better.

Abstract: The present disclosure provides a touch controller, which includes, a monitoring circuit, configured to configured to detect a sensing signal generated via a touch sensor when a display panel is driven, and obtain at least one synchronizing signal according to the sensing signal; and a touch detecting circuit, configured to output a touch driving signal to the touch sensor according to the synchronizing signal. The touch controller provided by the present disclosure reduces the signal interference between the touch controller and the display driving circuit by using a touch sensor to obtain the synchronizing signal from the display panel.

Abstract: The present disclosure provides a capacitance detection circuit, which includes a front end circuit and a processing circuit; where the front end circuit comprises a first driving circuit, a first cancel circuit and a PGA circuit, the first driving circuit, the first cancel circuit and the PGA circuit are connected to a first end of a detection capacitor, a second end of the detection capacitor is grounded, and the processing circuit is connected to an output end of the front end circuit, and configured to determine a capacitance variation of a capacitance of the detection capacitor with respect to the base capacitance according to a voltage signal output by the front end circuit.

Abstract: A PUF device and a method of outputting a random sequence are disclosed. The PUF device includes: at least one processing unit and at least one PUF unit, and a first PUF unit of the at least one PUF unit includes a first MOS transistor and a second MOS transistor, two sources of the two MOS transistors are connected to a same input voltage; two gates of the two MOS transistors are floating; and two drains of the two MOS transistors are respectively connected with a first processing unit, and the first processing unit is configured to: output a first random value corresponding to the first PUF unit according to a difference between two results output by the two drains of the two MOS transistors, when the input voltage is greater than or equal to a preset voltage.