Patents Assigned to Shin-Etsu Quartz Products Co., Ltd.
  • Patent number: 10323334
    Abstract: The present invention is a method for producing a quartz glass crucible for pulling a single crystal silicon from a silicon melt held therein, including the steps of: producing a quartz glass crucible having an outer layer including an opaque quartz glass containing bubbles therein and an inner layer including a transparent quartz glass containing substantially no bubbles; roughening a region of an inner surface of the produced quartz glass crucible, the region being in contact with the silicon melt when holding the silicon melt; and heating the quartz glass crucible having the roughened inner surface to crystallize a surface of the roughened region. This can produce a quartz glass crucible for pulling a single crystal silicon which can suppress generation of a brown ring on the inner surface of the crucible during pulling the single crystal silicon and can suppress crystallinity disorder of the single crystal silicon.
    Type: Grant
    Filed: June 1, 2015
    Date of Patent: June 18, 2019
    Assignee: SHIN-ETSU QUARTZ PRODUCTS CO., LTD.
    Inventor: Yuji Baba
  • Publication number: 20180305236
    Abstract: One aspect is a process to producing a synthetic quartz glass, including an annealing treatment that includes: putting a synthetic quartz glass as a parent material into a heat treatment furnace; elevating a temperature in the heat treatment furnace to a prescribed keeping temperature that is equal to or higher than the annealing point; keeping the keeping temperature; annealing the synthetic quartz glass; and taking the synthetic quartz glass out of the heat treatment furnace. The process includes determining an annealing rate v [° C./h] of the annealing step based on a value of S/V [mm2/mm3], wherein S [mm2] is the surface area of the synthetic quartz glass as a parent material and V [mm3] is the volume thereof and a target birefringence Re [nm/cm] for the synthetic quartz glass after the annealing, and the annealing step is performed at the determined annealing rate v.
    Type: Application
    Filed: April 23, 2018
    Publication date: October 25, 2018
    Applicants: Shin-Etsu Quartz Products Co., Ltd., Heraeus Quarzglas GmbH & Co. KG
    Inventor: Manabu UTSUMI
  • Patent number: 10104768
    Abstract: Provided are a sizing agent for quartz glass fibers capable of suppressing charging of quartz glass fibers, and suppressing generation of fluff in a production process for quartz glass fibers and a weaving process for a quartz glass cloth, a quartz glass fiber or a quartz glass yarn having applied thereonto the sizing agent, a quartz glass cloth, a prepreg for a printed circuit board, and a product using the quartz glass fiber. The sizing agent for quartz glass fibers includes an aqueous solution containing: a cationic vinyl acetate copolymer emulsion in which a cationic vinyl acetate copolymer having a weight average molecular weight of from 5,000 to 500,000 is dispersed in water; and starch, in which emulsion particles of the cationic vinyl acetate copolymer emulsion have a 50% diameter on a volume basis of from 0.1 ?m to 5 ?m.
    Type: Grant
    Filed: June 9, 2016
    Date of Patent: October 16, 2018
    Assignee: SHIN-ETSU QUARTZ PRODUCTS CO., LTD.
    Inventor: Yuya Yokosawa
  • Publication number: 20170175291
    Abstract: The present invention is a method for producing a quartz glass crucible for pulling a single crystal silicon from a silicon melt held therein, including the steps of: producing a quartz glass crucible having an outer layer including an opaque quartz glass containing bubbles therein and an inner layer including a transparent quartz glass containing substantially no bubbles; roughening a region of an inner surface of the produced quartz glass crucible, the region being in contact with the silicon melt when holding the silicon melt; and heating the quartz glass crucible having the roughened inner surface to crystallize a surface of the roughened region. This can produce a quartz glass crucible for pulling a single crystal silicon which can suppress generation of a brown ring on the inner surface of the crucible during pulling the single crystal silicon and can suppress crystallinity disorder of the single crystal silicon.
    Type: Application
    Filed: June 1, 2015
    Publication date: June 22, 2017
    Applicant: SHIN-ETSU QUARTZ PRODUCTS CO., LTD.
    Inventor: Yuji BABA
  • Patent number: 9409812
    Abstract: [Problem] The provision of a synthetic quartz glass heat treatment method that can, by a single heat treatment, and without particular limitations on the OH group concentration distribution of the starting material, regulate the birefringence fast axis direction in the synthetic quartz glass after it has been heat-treated. [Means of overcoming the problem] A heat treatment method for synthetic quartz glass whereby columnar synthetic quartz glass having two opposing end faces and a lateral face is heat-treated covered with thermal insulator; wherein said heat treatment is performed using as end face thermal insulator which covers said two end faces, and as lateral face thermal insulator which covers said lateral face, thermal insulators that differ in at least either type or thickness to afford different thermal insulation effects such that the birefringence fast axis direction of said synthetic quartz glass is regulated.
    Type: Grant
    Filed: July 18, 2013
    Date of Patent: August 9, 2016
    Assignees: Heraeus Quarzglas GmbH & Co. KG, Shin-Etsu Quartz Products Co., Ltd.
    Inventor: Shigeo Harada
  • Patent number: 9403620
    Abstract: A silica container contains a substrate having a rotational symmetry, containing mainly a silica, and gaseous bubbles in a peripheral part of the substrate; a transparent silica glass in an inner peripheral part of the substrate; and an inner layer, formed on an inner surface of the substrate and containing a transparent silica glass; wherein the substrate contains Li, Na, and K in a total concentration of 50 or less ppm by weight; the substrate has a linear light transmittance of 91.8% to 93.2% at a light wavelength of 600 nm; the inner layer contains Li, Na, and K in a total concentration of 100 or less ppb by weight and at least one of Ca, Sr, and Ba in a total concentration of 50 to 2000 ppm by weight; and the inner layer has a linear light transmittance of 91.8% to 93.2% at a light wavelength of 600 nm.
    Type: Grant
    Filed: April 12, 2013
    Date of Patent: August 2, 2016
    Assignee: SHIN-ETSU QUARTZ PRODUCTS CO., LTD.
    Inventors: Shigeru Yamagata, Tomomi Usui
  • Patent number: 9382640
    Abstract: The present invention provides a single-crystal silicon pulling silica container including an outer layer made of opaque silica glass containing gaseous bubbles and an inner layer made of transparent silica glass that does not substantially contain the gaseous bubbles; the container also including: a bottom portion, a curved portion, and a straight body portion, wherein continuous grooves are formed on a surface of the inner layer from at least part of the bottom portion to at least part of the straight body portion through the curved portion. As a result, there are provided the single-crystal silicon pulling silica container that can reduce defects called voids or pinholes in the pulled single-crystal silicon and a method for manufacturing such a silica container.
    Type: Grant
    Filed: October 2, 2012
    Date of Patent: July 5, 2016
    Assignee: SHIN-ETSU QUARTZ PRODUCTS CO., LTD.
    Inventor: Shigeru Yamagata
  • Patent number: 9376761
    Abstract: The present invention is directed to a single-crystal silicon pulling silica container, the silica container including a straight body portion, a curved portion, and a bottom portion, wherein the OH group concentration in the straight body portion is 30 to 300 ppm by mass, the OH group concentration in the bottom portion is 30 ppm by mass or less, and the difference in the OH group concentration between the straight body portion and the bottom portion is 30 ppm by mass or more. As a result, a low-cost single-crystal silicon pulling silica container, the silica container that can reduce cavity defects called voids and pinholes in pulled single crystal silicon, is provided.
    Type: Grant
    Filed: November 8, 2012
    Date of Patent: June 28, 2016
    Assignee: SHIN-ETSU QUARTZ PRODUCTS CO., LTD.
    Inventor: Shigeru Yamagata
  • Patent number: 9216923
    Abstract: A mold for making a fused silica crucible includes a cylindrical can having an interior bore. A graphite insert is received in the bore and has an upper surface adapted to form the lower surface of the crucible while the interior bore of the can forms the side wall of the crucible. Silica grain is deposited in the mold while it rotates. Bores formed in the can above the insert and in the insert draw air through the silica during fusion.
    Type: Grant
    Filed: July 25, 2011
    Date of Patent: December 22, 2015
    Assignee: Shin-Etsu Quartz Products Co., Ltd.
    Inventors: Katsuhiko Kemmochi, Larry Baer, Carl Hagstrom
  • Publication number: 20150353417
    Abstract: Provided are a quartz glass member for wavelength conversion that is high in environmental resistance, heat resistance, durability, and color rendering property, can be manufactured by a low temperature process, and can efficiently convert a wavelength, and a method of manufacturing the same. The quartz glass member for wavelength conversion includes: a quartz glass base material; and a quartz glass surface layer film formed on a surface of the quartz glass base material, in which: the quartz glass surface layer film is obtained by applying, onto the surface of the quartz glass base material, a polysilazane-containing solution containing fluorescent material particles having an average particle diameter of from 0.
    Type: Application
    Filed: December 25, 2014
    Publication date: December 10, 2015
    Applicant: SHIN-ETSU QUARTZ PRODUCTS CO., LTD.
    Inventors: Tatsuya Mori, Tatsuhiro Sato, Akira Fujinoki
  • Patent number: 9145325
    Abstract: A method for producing a silica container having a rotational symmetry includes forming a preliminarily molded article by feeding a powdered substrate's raw material to an inner wall of an outer frame having aspiration holes with rotating the frame, and forming a silica substrate. The preliminarily molded article is aspirated from an outer peripheral side with controlling a humidity inside the outer frame by ventilating gases present in the outer frame with charging from inside the preliminarily molded article a gas mixture comprised of an O2 gas and an inert gas and made below a prescribed dew-point temperature by dehumidification, and at the same time heated from inside the preliminarily molded article by a discharge-heat melting method with carbon electrodes, thereby making an outer peripheral part of the preliminarily molded article to a sintered body while an inner peripheral part to a fused glass body.
    Type: Grant
    Filed: June 13, 2014
    Date of Patent: September 29, 2015
    Assignee: SHIN-ETSU QUARTZ PRODUCTS CO., LTD.
    Inventors: Shigeru Yamagata, Tomomi Usui
  • Patent number: 9067823
    Abstract: It is an object of the invention to provide a synthetic silica glass for a cladding of a core from a fiber laser. The refractive index should be low and there should be no foaming foreign substances. This object is achieved by a synthetic silica glass for an optical element, which contains paramagnetic E? defect centers in an amount that is sufficient to set the absorption coefficient at 215 nm is in the range between 0.001 cm?1 and 2 cm?1; it contains paramagnetic oxygen defect centers in an amount that is sufficient to set the absorption coefficient at 250 nm is in the range between 0.001 cm?1 and 2 cm?1; the OH group concentration is 5 wtppm or less; the viscosity at 1100° C. is in the range between 1×1013.5 poise and 1×1015.5; the total content of metallic elements of Group 3 and Group 13 of the periodic table is 50.000 wtppm or less; and the relative refractive index difference of said synthetic silica glass is in the range between +0.
    Type: Grant
    Filed: April 20, 2011
    Date of Patent: June 30, 2015
    Assignees: Heraeus Quarzglas GmbH & Co. KG, Shin-Etsu Quartz Products Co., Ltd
    Inventors: Tatsuhiro Sato, Tomoichi Kumata
  • Patent number: 9051203
    Abstract: Provided in a facile manner are a black synthetic quartz glass with a transparent layer, which meets demands for various shapes, has a black portion satisfying required light shield property and emissivity in an infrared region, keeps a purity equivalent to that of a synthetic quartz glass in terms of metal impurities, has a high-temperature viscosity characteristic comparable to that of a natural quartz glass, can be subjected to high-temperature processing such as welding, does not release carbon from its surface, and is free of bubbles and foreign matter in the transparent layer and the black quartz glass, and at an interface between the transparent layer and the black quartz glass, and a production method therefor.
    Type: Grant
    Filed: September 13, 2012
    Date of Patent: June 9, 2015
    Assignee: Shin-Etsu Quartz Products Co., Ltd.
    Inventors: Hiroyuki Watanabe, Takayuki Imaizumi, Tatsuhiro Sato
  • Patent number: 8915096
    Abstract: A method for producing a silica container includes forming a preliminarily molded substrate, wherein a first powdered raw material is fed to an inner wall of an outer frame having aspiration holes while rotating the outer frame; forming a preliminarily molded intermediate layer, wherein a second powdered raw material added with an aluminum compound or a crystal nucleating agent as an additive is fed to an inner wall of the preliminarily molded substrate; and forming an inner layer, wherein the preliminarily molded substrate and the preliminarily molded intermediate layer are degassed by aspiration from a peripheral side with heating from an inside forming a substrate and an intermediate layer, and a third powdered raw material having a high silica purity is spread from inside the substrate having the formed intermediate layer with heating from the inside forming an inner layer on an inner surface of the intermediate layer.
    Type: Grant
    Filed: March 11, 2013
    Date of Patent: December 23, 2014
    Assignee: Shin-Etsu Quartz Products Co., Ltd.
    Inventors: Shigeru Yamagata, Tomomi Usui
  • Patent number: 8915097
    Abstract: Producing a silica container includes forming a powder mixture by adding an Al compound or a crystal nucleating agent into a first powdered raw material; preliminarily molding to an intended shape by feeding the powder mixture to an inner wall of an outer frame while rotating the outer frame having aspiration holes; forming a silica substrate; and forming a transparent silica glass layer on an inner surface of the silica substrate, wherein the preliminarily molded article is degassed by aspiration from a peripheral side and heated from inside the preliminarily molded article at high temperature making a peripheral part of the preliminarily molded article to a sintered body while an inner part to a fused glass body, and a second powdered raw material having a higher silica purity than the first powdered raw material is spread from inside the silica substrate and heated from the inside at high temperature.
    Type: Grant
    Filed: March 12, 2013
    Date of Patent: December 23, 2014
    Assignee: Shin-Etsu Quartz Products Co., Ltd
    Inventors: Shigeru Yamagata, Tomomi Usui
  • Publication number: 20140290308
    Abstract: A method for producing a silica container having a rotational symmetry includes forming a preliminarily molded article by feeding a powdered substrate's raw material to an inner wall of an outer frame having aspiration holes with rotating the frame, and forming a silica substrate. The preliminarily molded article is aspirated from an outer peripheral side with controlling a humidity inside the outer frame by ventilating gases present in the outer frame with charging from inside the preliminarily molded article a gas mixture comprised of an O2 gas and an inert gas and made below a prescribed dew-point temperature by dehumidification, and at the same time heated from inside the preliminarily molded article by a discharge-heat melting method with carbon electrodes, thereby making an outer peripheral part of the preliminarily molded article to a sintered body while an inner peripheral part to a fused glass body.
    Type: Application
    Filed: June 13, 2014
    Publication date: October 2, 2014
    Applicant: SHIN-ETSU QUARTZ PRODUCTS CO., LTD.
    Inventors: Shigeru YAMAGATA, Tomomi USUI
  • Publication number: 20140283737
    Abstract: The present invention is directed to a single-crystal silicon pulling silica container, the silica container including a straight body portion, a curved portion, and a bottom portion, wherein the OH group concentration in the straight body portion is 30 to 300 ppm by mass, the OH group concentration in the bottom portion is 30 ppm by mass or less, and the difference in the OH group concentration between the straight body portion and the bottom portion is 30 ppm by mass or more. As a result, a low-cost single-crystal silicon pulling silica container, the silica container that can reduce cavity defects called voids and pinholes in pulled single crystal silicon, is provided.
    Type: Application
    Filed: November 8, 2012
    Publication date: September 25, 2014
    Applicant: SHIN-ETSU QUARTZ PRODUCTS CO., LTD.
    Inventor: Shigeru Yamagata
  • Patent number: 8815403
    Abstract: A method for producing a silica container having a rotational symmetry is provided. The method includes forming a preliminarily molded article by feeding a powdered substrate's raw material to an inner wall of an outer frame having aspiration holes with rotating the frame, and forming a silica substrate. The preliminarily molded article is aspirated from an outer peripheral side with controlling a humidity inside the outer frame by ventilating gases present in the outer frame with charging from inside the preliminarily molded article a gas mixture comprised of an O2 gas and an inert gas and made below a prescribed dew-point temperature by dehumidification, and at the same time heated from inside the preliminarily molded article by a discharge-heat melting method with carbon electrodes, thereby making an outer peripheral part of the preliminarily molded article to a sintered body while an inner peripheral part to a fused glass body.
    Type: Grant
    Filed: June 25, 2010
    Date of Patent: August 26, 2014
    Assignee: Shin-Etsu Quartz Products Co., Ltd.
    Inventors: Shigeru Yamagata, Tomomi Usui
  • Publication number: 20140150715
    Abstract: A single-crystal silicon pulling silica container includes: a transparent layer made of transparent silica glass in an inner side of the silica container, and an opaque layer made of opaque silica glass containing gaseous bubbles in an outer side of the silica container, wherein the transparent layer is constituted of a high-OH group layer that is placed in an inner surface side of the silica container and contains the OH group at a concentration of 200 to 2000 ppm by mass and a low-OH group layer that has the OH group concentration lower than that of the high-OH group layer, and Ba is applied to the inner surface of the high-OH group layer at a concentration of 25 to 1000 ?g/cm2.
    Type: Application
    Filed: March 18, 2013
    Publication date: June 5, 2014
    Applicant: SHIN-ETSU QUARTZ PRODUCTS CO., LTD.
    Inventor: Shigeru Yamagata
  • Patent number: 8733127
    Abstract: A method for producing a silica container, the method including forming a preliminarily molded silica substrate to an intended shape by feeding a powdered substrate's raw material (silica particles) to an inner wall of a carbon-made outer frame having aspiration holes with rotating the outer frame, and forming the silica substrate wherein the preliminarily molded substrate is degassed by aspiration from its outer peripheral side with charging from an inner peripheral side of the preliminarily molded silica substrate a reducing gas containing more than 10% by volume of an H2 gas, and at the same time heated from inside the preliminarily molded silica substrate by a discharge-heat melting method with carbon electrodes, thereby making an outer peripheral part of the preliminarily molded silica substrate to a sintered body while an inner peripheral part of the preliminarily molded silica substrate to a fused glass body.
    Type: Grant
    Filed: June 1, 2010
    Date of Patent: May 27, 2014
    Assignee: Shin-Etsu Quartz Products Co., Ltd.
    Inventors: Shigeru Yamagata, Tomomi Usui