Patents Assigned to Shindengen Electric Manufacturing Co., Ltd.
  • Patent number: 11342452
    Abstract: A MOSFET includes: a semiconductor base substrate having an n-type column region and a p-type column region, the n-type column region and the p-type column region forming a super junction structure; and a gate electrode formed by way of a gate insulation film. Assuming a region of the semiconductor base substrate which provides a main operation of the MOSFET as an active region, a region of the semiconductor base substrate maintaining a withstand voltage of the MOSFET as an outer peripheral region, and a region of the semiconductor base substrate disposed between the active region and the outer peripheral region as an active connecting region, out of the active region, the active connecting region, and the outer peripheral region of the semiconductor base substrate, the crystal defects are formed only in the active region and the active connecting region.
    Type: Grant
    Filed: December 27, 2017
    Date of Patent: May 24, 2022
    Assignee: SHINDENGEN ELECTRIC MANUFACTURING CO., LTD.
    Inventors: Daisuke Arai, Mizue Kitada, Takeshi Asada, Noriaki Suzuki, Koichi Murakami
  • Patent number: 11342435
    Abstract: A wide gap semiconductor device has: a drift layer 12 using a first conductivity type wide gap semiconductor material; a well region 20, being a second conductivity type and provided in the drift layer 12; a polysilicon layer 150 provided on the well region 20; an interlayer insulating film 65 provided on the polysilicon layer 150; a gate pad 120 provided on the interlayer insulating film 65; and a source pad 110 electrically connected to the polysilicon layer 150.
    Type: Grant
    Filed: December 14, 2017
    Date of Patent: May 24, 2022
    Assignee: SHINDENGEN ELECTRIC MANUFACTURING CO., LTD.
    Inventor: Shunichi Nakamura
  • Patent number: 11323032
    Abstract: A power conversion device according to the present invention is provided with two or more sets of power modules each of which includes a switching element and a switching element control circuit having a third electrode voltage control part and a temperature detection part. The power modules PM1, PM2 are connected in parallel to each other. The switching element control circuit includes a temperature comparison part which calculates an average operation temperature of the switching element, and compares an operation temperature of the corresponding switching element and the average operation temperature. The third electrode voltage control part controls a third electrode voltage based on information including an average operation temperature, an operation temperature of the switching element, and a threshold voltage during operation.
    Type: Grant
    Filed: December 28, 2017
    Date of Patent: May 3, 2022
    Assignee: SHINDENGEN ELECTRIC MANUFACTURING CO., LTD.
    Inventors: Kenichi Suzuki, Wataru Miyazawa
  • Patent number: 11322448
    Abstract: An electronic module has a first substrate 11; a second substrate 21 provided in one side of the first substrate 11; and a chip module 100 provided between the first substrate 11 and the second substrate 21. The chip module 100 has an electronic element 13, 23 and a connecting body 60, 70, 80 electrically connected to the electronic element 13, 23. The electronic element 13, 23 extends along a first direction that is a thickness direction of the electronic module.
    Type: Grant
    Filed: January 17, 2018
    Date of Patent: May 3, 2022
    Assignee: SHINDENGEN ELECTRIC MANUFACTURING CO., LTD.
    Inventor: Kosuke Ikeda
  • Patent number: 11315850
    Abstract: A semiconductor device according to an embodiment is attached to a radiator and includes a heat-generating electronic component, a sealing part sealing the electronic component, a lead member that includes an inner lead part sealed with the sealing part and an outer lead part exposed from the sealing part, and a lead member that includes an inner lead part sealed with the sealing part and an outer lead part exposed from the sealing part. The inner lead part has a heat-dissipating end part that releases heat propagating from the outer lead part to the radiator and an electrical connecting part that is positioned between the heat-dissipating end part and the outer lead part and is electrically connected to the main electrode of the electronic component.
    Type: Grant
    Filed: August 24, 2017
    Date of Patent: April 26, 2022
    Assignee: SHINDENGEN ELECTRIC MANUFACTURING CO., LTD.
    Inventor: Mitsumasa Sasaki
  • Patent number: 11309415
    Abstract: A wide gap semiconductor device has: a first MOSFET region (M0) having a first gate electrode 10 and a first source region 30 provided in a first well region 20 made of a second conductivity type; a second MOSFET region (M1) provided below a gate pad 100 and having a second gate electrode 110 and a second source region 130 provided in a second well region 120 made of the second conductivity type; and a built-in diode region electrically connected to the second gate electrode 110. The second source region 130 of the second MOSFET region (M1) is electrically connected to the gate pad 100.
    Type: Grant
    Filed: March 29, 2018
    Date of Patent: April 19, 2022
    Assignee: SHINDENGEN ELECTRIC MANUFACTURING CO., LTD.
    Inventor: Shunichi Nakamura
  • Patent number: 11309274
    Abstract: An electronic module has a sealing part 90; a rear surface-exposed conductor 10, 20, 30 having a rear surface-exposed part 12, 22, 32 whose rear surface is exposed; a rear surface-unexposed conductor 40, 50 whose rear surface is not exposed; an electronic element 15, 25, which is provided in the sealing part 90 and provided on a front surface of the rear surface-exposed conductor 40, 50; a first connector 60 for electrically connecting the electronic element 15, 25 with the rear surface-exposed conductor 10, 20, 30; and a second connector 70 for electrically connecting the electronic element 15, 25 with the rear surface-unexposed conductor 40, 50. A thickness T1 of the first connector 60 is thicker than a thickness T2 of the second connector 70.
    Type: Grant
    Filed: November 10, 2017
    Date of Patent: April 19, 2022
    Assignee: SHINDENGEN ELECTRIC MANUFACTURING CO., LTD.
    Inventor: Yoshihiro Kamiyama
  • Patent number: 11309273
    Abstract: An electronic module has a first substrate 11, a first electronic element 13 provided on one side of the first substrate 11, a first connection body 60 provided on one side of the first electronic element 13, a second electronic element 23 provided on one side of the first connection body 60, a second substrate 21 provided on one side of the second electronic element 23, and an abutment body 250 that abuts on a face on one side of the second electronic element 23 and is capable of imparting a force toward one side with respect to the second substrate 21.
    Type: Grant
    Filed: May 19, 2017
    Date of Patent: April 19, 2022
    Assignee: SHINDENGEN ELECTRIC MANUFACTURING CO., LTD.
    Inventors: Kosuke Ikeda, Osamu Matsuzaki
  • Patent number: 11309250
    Abstract: An electronic module has a first substrate 11; an electronic element 13, 23 provided on one side of the first substrate 11; a sealing part 90 that seals at least the electronic element 13, 23; a connection terminal 110 electrically connected to the electronic element 13, 23 and exposed from a side surface of the sealing part 90; and a stress relaxation terminal 150, which is not electrically connected to the electronic element 13, 23, exposed from the side surface of the sealing part 90.
    Type: Grant
    Filed: January 17, 2018
    Date of Patent: April 19, 2022
    Assignee: SHINDENGEN ELECTRIC MANUFACTURING CO., LTD.
    Inventor: Kosuke Ikeda
  • Patent number: 11309232
    Abstract: A semiconductor device includes: a substrate; a semiconductor element that disposed on the upper surface of the substrate; a sealing portion that seals the substrate and the semiconductor element; a first lead frame that has one end in contact with a upper surface of the first conductive layer at an end extending in the side direction of the upper surface of the substrate in the sealing portion, and has the other end exposed from the sealing portion; a first conductive bonding material that bonds between the upper surface of the first conductive layer and the lower surface side of the one end portion of the first lead frame at the end portion of the substrate, and has electrical conductivity.
    Type: Grant
    Filed: October 26, 2017
    Date of Patent: April 19, 2022
    Assignee: SHINDENGEN ELECTRIC MANUFACTURING CO., LTD.
    Inventors: Soichiro Umeda, Takenori Ishioka
  • Patent number: 11300593
    Abstract: A semiconductor component 150 has a semiconductor layer 1 including a winding wire part 10 and a winding return wire part 50 connected at a terminal end part of the winding wire part 10 and returning from the terminal end part toward a starting end part side, wherein the semiconductor component is disposed so as to surround an object to be measured.
    Type: Grant
    Filed: November 24, 2017
    Date of Patent: April 12, 2022
    Assignee: SHINDENGEN ELECTRIC MANUFACTURING CO., LTD.
    Inventors: Kenichi Suzuki, Kazuyuki Sashida, Mizue Yamaji, Kenichi Yoshida, Shinji Kunori
  • Patent number: 11289993
    Abstract: A switching element control circuit: a third electrode voltage control part; a temperature detection part; a first electrode current detection part; a memory part which stores information including an initial threshold voltage and an operation temperature/first electrode current characteristic of the threshold voltage; and a threshold voltage calculation part which calculates a threshold voltage at the time of operating the switching element based on information including the initial threshold voltage, the operation temperature of the switching element, and a first electrode current, and information relating to an operation temperature/first electrode current characteristic of a threshold voltage, wherein the third electrode voltage control part controls the third electrode voltage based on a threshold voltage at the time of operating the switching element calculated by the threshold voltage calculation part.
    Type: Grant
    Filed: September 25, 2017
    Date of Patent: March 29, 2022
    Assignee: SHINDENGEN ELECTRIC MANUFACTURING CO., LTD.
    Inventors: Kenichi Suzuki, Wataru Miyazawa
  • Patent number: 11280812
    Abstract: A semiconductor device has a first electrode 61; a second electrode 62; and a semiconductor layer 1 having a winding wire part 10 provided so as to surround a current flowing between the first electrode 61 and the second electrode 62, a winding return wire part, which is provided so as to surround the current, is connected to a terminal end part of the winding wire part 10 and returns toward a starting end part side from the terminal end part, and an integration circuit configuration part connected to the winding wire part 10 or the winding return wire part. The integration circuit configuration part has one or more of a resistance part 115, a capacitor part 125 and an operational amplifier part 135.
    Type: Grant
    Filed: November 24, 2017
    Date of Patent: March 22, 2022
    Assignee: SHINDENGEN ELECTRIC MANUFACTURING CO., LTD.
    Inventors: Kazuyuki Sashida, Mizue Yamaji, Kenichi Suzuki, Kenichi Yoshida, Shinji Kunori
  • Patent number: 11276663
    Abstract: An electronic module has a first substrate 11, a first conductor layer 12 that is provided on one side of the first substrate 11, a first electronic element 13 that is provided on one side of the first conductor layer 12, a second electronic element 23 that is provided on one side of the first electronic element 23, and a second connecting body 70 that has a second head part 71 provided on one side of the second electronic element 23 and an extending part 75 extending from the second head part 71 to the other side and abutting against the first substrate 11 or the first conductor layer 12.
    Type: Grant
    Filed: May 19, 2017
    Date of Patent: March 15, 2022
    Assignee: SHINDENGEN ELECTRIC MANUFACTURING CO., LTD.
    Inventors: Kosuke Ikeda, Osamu Matsuzaki
  • Patent number: 11268988
    Abstract: A detection substrate 150 has a body film 1a having a through hole 91; a winding wire part 10 provided on a surface of one side of the body film 1a, on a surface of another side of the body film 1a and in the through hole 91, and disposed so as to surround a current to be detected; and a winding return wire part 50, provided on the body film 1a, connected at a terminal end part of the winding wire part 10 and returning from the terminal end part toward a starting end part side.
    Type: Grant
    Filed: November 24, 2017
    Date of Patent: March 8, 2022
    Assignee: SHINDENGEN ELECTRIC MANUFACTURING CO., LTD.
    Inventors: Kazuyuki Sashida, Kenichi Suzuki, Mizue Yamaji, Kenichi Yoshida, Shinji Kunori
  • Patent number: 11264919
    Abstract: [Problem] An object is to provide an inverter circuit that can improve the efficiency and stabilize the operation, the inverter circuit executes normal control when the output voltage rises, even when the output frequency is low, and the inverter circuit divides the normal control and regenerative control operations so that the regenerative control is executed when the output voltage drops. [Solution] When the error value is greater than or equal to the first threshold value, the control unit of the inverter circuit executes a normal control of the capacitive load, by operating the primary side switch with the secondary side switch turned off, and on the other hand, when the error value is less than the first threshold value, the control unit executes a regenerative control to the direct current power supply, by operating the secondary side switch with the primary side switch turned off.
    Type: Grant
    Filed: June 7, 2019
    Date of Patent: March 1, 2022
    Assignee: SHINDENGEN ELECTRIC MANUFACTURING CO., LTD.
    Inventor: Masaaki Hayashi
  • Patent number: 11264494
    Abstract: A wide gap semiconductor device has: a drift layer 12 using wide gap semiconductor material being a first conductivity type; a plurality of well regions 20 being a second conductivity type and formed in the drift layer 12; a polysilicon layer 150 provided on the well regions 20 and on the drift layer 12 between the well regions 20; an interlayer insulating film 65 provided on the polysilicon layer 150; a gate pad 120 provided on the interlayer insulating film 65; and a source pad 110 electrically connected to the polysilicon layer 150.
    Type: Grant
    Filed: November 13, 2017
    Date of Patent: March 1, 2022
    Assignee: SHINDENGEN ELECTRIC MANUFACTURING CO., LTD.
    Inventor: Shunichi Nakamura
  • Patent number: 11264351
    Abstract: A method of manufacturing a chip module comprises a step of disposing a first electronic element 13 on a first jig 500, a step of disposing a first connector 60 on the first electronic element 13 via a conductive adhesive 5, a step of disposing a second electronic element 23 on the first connector 60 via a conductive adhesive 5, a step of disposing a second connector 70 on a second jig 550, a step of reversing the second jig in a state where the second connector 70 is fixed to the second jig 550 and disposing the second connector 70 on the second electronic element 23 via a conductive adhesive 5, and a step of curing the conductive adhesives 5.
    Type: Grant
    Filed: May 19, 2017
    Date of Patent: March 1, 2022
    Assignee: SHINDENGEN ELECTRIC MANUFACTURING CO., LTD.
    Inventors: Kosuke Ikeda, Osamu Matsuzaki
  • Patent number: 11239741
    Abstract: A semiconductor switch control circuit includes: a pulse signal generating part configured to generate a pulse signal which becomes a time reference for performing an ON/OFF control of a semiconductor switch; a drive current generating part configured to generate a drive current based on the pulse signal which the pulse signal generating part generates and to supply the drive current to a gate electrode of the semiconductor switch; a current detecting part configured to detect a drain current or a source current of the semiconductor switch; and a drive current control part configured to have a function of controlling a drive current which the drive current generating part generates based on the pulse signal which the pulse signal generating part generates and the current which the current detecting part detects.
    Type: Grant
    Filed: March 16, 2018
    Date of Patent: February 1, 2022
    Assignee: SHINDENGEN ELECTRIC MANUFACTURING CO., LTD.
    Inventors: Wataru Miyazawa, Shigeru Hisada
  • Patent number: 11234303
    Abstract: A vehicle lighting control device that controls lighting of a plurality of LED units mounted on a vehicle including an electronic device, the vehicle lighting control device including: a plurality of converters that are connected to a power supply and transform a power supply voltage supplied from the power supply; an output circuit that is connected to an output of the converter and outputs a drive signal to the LED unit with a voltage transformed by the converter; and a processor that generates a plurality of switching signals and outputs the generated switching signals to the corresponding converters, wherein at least one of a rising timing and a falling timing differs between the plurality of switching signals output to the plurality of converters.
    Type: Grant
    Filed: January 16, 2018
    Date of Patent: January 25, 2022
    Assignee: SHINDENGEN ELECTRIC MANUFACTURING CO., LTD.
    Inventor: Ryo Natsuki