Patents Assigned to Shindengen Electric Manufacturing Co., Ltd.
  • Patent number: 11032907
    Abstract: A printed board joining method according to an embodiment includes preparing a printed board having, on an upper surface, a plurality of connection land portions provided along a side end, preparing a printed board having, on a lower surface, a plurality of connection land portions along a side end, and joining the printed board and the printed board together with a conductive joining material such that the upper surface is opposed to the lower surface and the plurality of connection land portions are electrically connected to the corresponding connection land portions. One or more cutout portions are provided between the plurality of connection land portions and/or between the plurality of connection land portions.
    Type: Grant
    Filed: May 23, 2016
    Date of Patent: June 8, 2021
    Assignee: SHINDENGEN ELECTRIC MANUFACTURING CO., LTD.
    Inventor: Toshifumi Okano
  • Patent number: 11031932
    Abstract: A power module includes a switching element, a temperature detection part which detects an operation temperature T of the switching element, a control electrode voltage control part which controls a control electrode voltage based on a threshold voltage Vth during an operation of the switching element which is calculated based on information including the operation temperature T of the switching element detected by the temperature detection part, and a switching speed control part which controls a switching speed of the switching element based on the operation temperature T of the switching element detected by the temperature detection part.
    Type: Grant
    Filed: December 22, 2017
    Date of Patent: June 8, 2021
    Assignee: SHINDENGEN ELECTRIC MANUFACTURING CO., LTD.
    Inventors: Kenichi Suzuki, Wataru Miyazawa
  • Patent number: 11005354
    Abstract: A power conversion circuit includes: a MOSFET having a super junction structure; an inductive load; and a freewheel diode. A switching frequency of the MOSFET is 10 kHz or more. When the MOSFET is turned off, a first period during which a drain current decreases, a second period during which the drain current increases, and a third period during which the drain current decreases again appear in this order. The freewheel diode is an Si-FRD or an SiC-SBD, and current density obtained by dividing a current value of the forward current by an area of an active region of the freewheel diode falls within a range of 200 A/cm2 to 400 A/cm2 when the freewheel diode is the Si-FRD, and the current density falls within a range of 400 A/cm2 to 1500 A/cm2 when the freewheel diode is the SiC-SBD.
    Type: Grant
    Filed: November 17, 2017
    Date of Patent: May 11, 2021
    Assignee: SHINDENGEN ELECTRIC MANUFACTURING CO., LTD.
    Inventors: Daisuke Arai, Shigeru Hisada, Mizue Kitada
  • Publication number: 20210134709
    Abstract: A semiconductor module includes a die pad frame; a semiconductor chip disposed in a chip region an an upper surface of the die pad frame, the semiconductor chip having an upper surface on which a first electrode is disposed and a lower surface on which a second electrode is disposed; a conductive connection member for die pad disposed between the second electrode of the semiconductor chip and the upper surface of the die pad frame, the conductive connection member for die pad electrically connecting the second electrode of the semiconductor chip and the upper surface of the die pad frame; and a sealing resin for sealing the semiconductor chip, the die pad frame, and the conductive connection member for die pad.
    Type: Application
    Filed: May 29, 2018
    Publication date: May 6, 2021
    Applicants: SHINDENGEN ELECTRIC MANUFACTURING CO., LTD., KATOH ELECTRIC CO., LTD.
    Inventors: Hiroyoshi URUSHIHATA, Takashi SHIGENO, Eiki ITO, Wataru KIMURA, Hirotaka ENDO, Toshio KOIKE, Toshiki KOUNO
  • Publication number: 20210134763
    Abstract: An electronic module has a first substrate 11; a first electronic element 13 provided on one side of the first substrate 11; a first connection body 60 provided on the one side of the first electronic element 13; a second electronic element 23 provided on the one side of the first connection body 60; and a second connection body 70 provided on the one side of the second electronic element 23. The first electronic element 13 and the second electronic element 23 do not overlap in a plane direction.
    Type: Application
    Filed: July 4, 2018
    Publication date: May 6, 2021
    Applicant: SHINDENGEN ELECTRIC MANUFACTURING CO., LTD.
    Inventor: Kosuke IKEDA
  • Publication number: 20210123954
    Abstract: An electronic module has an electronic element 210; a connection body 250 provided on a front face of the electronic element 210; and a detection part 100 having a winding wire part 10 provided so as to surround the connection body 250, and a winding return wire part 50 connected to a terminal end part of the winding wire part 10 and returns from the terminal end part toward a starting end part.
    Type: Application
    Filed: July 4, 2018
    Publication date: April 29, 2021
    Applicant: SHINDENGEN ELECTRIC MANUFACTURING CO., LTD.
    Inventors: Kosuke IKEDA, Kazuyuki SASHIDA
  • Publication number: 20210123953
    Abstract: A semiconductor device has a first electrode 61; a second electrode 62; and a semiconductor layer 1 having a winding wire part 10 provided so as to surround a current flowing between the first electrode 61 and the second electrode 62, a winding return wire part, which is provided so as to surround the current, is connected to a terminal end part of the winding wire part 10 and returns toward a starting end part side from the terminal end part, and an integration circuit configuration part connected to the winding wire part 10 or the winding return wire part. The integration circuit configuration part has one or more of a resistance part 115, a capacitor part 125 and an operational amplifier part 135.
    Type: Application
    Filed: November 24, 2017
    Publication date: April 29, 2021
    Applicant: SHINDENGEN ELECTRIC MANUFACTURING CO., LTD.
    Inventors: Kazuyuki SASHIDA, Mizue YAMAJI, Kenichi SUZUKI, Kenichi YOSHIDA, Shinji KUNORI
  • Publication number: 20210119008
    Abstract: A semiconductor device has: a semiconductor substrate; a drift layer of a first conductivity type; a well region of a second conductivity type; a high-concentration region of the second conductivity type, a source region of the first conductivity type; an insulating film provided on the drift layer; a first contact metal film in contact with the source region and the high-concentration region through a first opening provided in the insulating film; and a second contact metal film formed on a surface of the first contact metal film and contacting the high-concentration region through a second opening provided in the first contact metal film; a source electrode film formed on a surface of a contact metal layer including the first contact metal film and the second contact metal film. The first contact metal film includes titanium nitride, and the second contact metal film includes titanium.
    Type: Application
    Filed: April 11, 2018
    Publication date: April 22, 2021
    Applicant: SHINDENGEN ELECTRIC MANUFACTURING CO., LTD.
    Inventors: Teppei TAKAHASHI, Tetsuto INOUE, Akihiko SUGAI, Takashi MOCHIZUKI, Shunichi NAKAMURA
  • Patent number: 10985092
    Abstract: A semiconductor device includes: a seal portion; a first electronic element; a first lead terminal; a second lead terminal having one end that is disposed to be close to the one end of the first lead terminal within the seal portion, and another end that is exposed from another end of the seal portion, the other end of the seal portion being along the longitudinal direction; a first connecting element disposed within the seal portion, and having one end that is electrically connected to the first electrode disposed on the first electronic element, and another end that is electrically connected to the one end of the second lead terminal; and a conductive bonding agent.
    Type: Grant
    Filed: September 5, 2017
    Date of Patent: April 20, 2021
    Assignee: SHINDENGEN ELECTRIC MANUFACTURING CO., LTD.
    Inventor: Yoshihiro Kamiyama
  • Patent number: 10979043
    Abstract: A switching element control circuit includes a third electrode voltage control part which controls a third electrode voltage; a temperature detection part which detects an operation temperature of the switching element; a memory part which stores an initial threshold voltage, an initial temperature when the initial threshold voltage is measured, and a temperature characteristic of a threshold voltage; and a threshold voltage calculation part which calculates a threshold voltage at the time of operating the switching element based on information including the operation temperature of the switching element, the initial threshold voltage, and an initial temperature when the initial threshold voltage is measured, and information relating to a temperature characteristic of a threshold voltage, wherein the third electrode voltage control part controls the third electrode voltage based on a threshold voltage at the time of operating the switching element calculated by the threshold voltage calculation part.
    Type: Grant
    Filed: September 21, 2017
    Date of Patent: April 13, 2021
    Assignee: SHINDENGEN ELECTRIC MANUFACTURING CO., LTD.
    Inventors: Kenichi Suzuki, Wataru Miyazawa
  • Publication number: 20210091004
    Abstract: An electronic module has a first substrate 11; an electronic element 13, 23 provided on one side of the first substrate 11; a sealing part 90 that seals at least the electronic element 13, 23; a connection terminal 110 electrically connected to the electronic element 13, 23 and exposed from a side surface of the sealing part 90; and a stress relaxation terminal 150, which is not electrically connected to the electronic element 13, 23, exposed from the side surface of the sealing part 90.
    Type: Application
    Filed: January 17, 2018
    Publication date: March 25, 2021
    Applicant: SHINDENGEN ELECTRIC MANUFACTURING CO., LTD.
    Inventor: Kosuke IKEDA
  • Patent number: 10957630
    Abstract: A semiconductor device includes: a circuit unit including a semiconductor chip; a plurality of pin terminals formed in a rod shape extending in a same direction from the circuit unit and electrically connected to the circuit unit; a sealing resin portion sealing the circuit unit and first portions of the plurality of pin terminals positioned on a side of the circuit unit; and a plurality of covering resin portions integrally extending from an outer surface of the sealing resin portion from which second portions of the plurality of pin terminals protrude, the plurality of covering resin portions being formed in a cylindrical shape respectively covering base end portions of the second portions of the plurality of pin terminals, which are positioned on a side of the sealing resin portion.
    Type: Grant
    Filed: December 19, 2018
    Date of Patent: March 23, 2021
    Assignee: SHINDENGEN ELECTRIC MANUFACTURING CO., LTD.
    Inventors: Soichiro Umeda, Atsushi Kyutoku
  • Patent number: 10950522
    Abstract: An electronic device has an electronic module having an insulating substrate 60, a conductor layer 20 provided on the insulating substrate 60, an electronic element 40 provided on the conductor layer 20 and a heat dissipation layer 10 provided on the insulating substrate in an opposite side of the electronic element 40 and a cooling body 100 which abuts on the heat dissipation layer 10. The cooling body 100 has a divided part 110 being provided at a portion which abuts on the heat dissipation layer 10 and being a plurality of divided regions.
    Type: Grant
    Filed: February 13, 2017
    Date of Patent: March 16, 2021
    Assignee: SHINDENGEN ELECTRIC MANUFACTURING CO., LTD.
    Inventors: Junya Yuguchi, Kousuke Ikeda, Kenichi Suzuki
  • Publication number: 20210074827
    Abstract: A wide gap semiconductor device has: a drift layer 12 using a first conductivity type wide gap semiconductor material; a well region 20, being a second conductivity type and provided in the drift layer 12; a polysilicon layer 150 provided on the well region 20; an interlayer insulating film 65 provided on the polysilicon layer 150; a gate pad 120 provided on the interlayer insulating film 65; and a source pad 110 electrically connected to the polysilicon layer 150.
    Type: Application
    Filed: December 14, 2017
    Publication date: March 11, 2021
    Applicant: SHINDENGEN ELECTRIC MANUFACTURING CO., LTD.
    Inventor: Shunichi NAKAMURA
  • Publication number: 20210075416
    Abstract: A power module includes a switching element, a temperature detection part which detects an operation temperature T of the switching element, a control electrode voltage control part which controls a control electrode voltage based on a threshold voltage Vth during an operation of the switching element which is calculated based on information including the operation temperature T of the switching element detected by the temperature detection part, and a switching speed control part which. controls a switching speed of the switching element based on the operation temperature T of the switching element detected by the temperature detection part.
    Type: Application
    Filed: December 22, 2017
    Publication date: March 11, 2021
    Applicant: SHINDENGEN ELECTRIC MANUFACTURING CO., LTD.
    Inventors: Kenichi SUZUKI, Wataru MIYAZAWA
  • Publication number: 20210050293
    Abstract: An electronic module includes a power supply wiring line disposed on a substrate along a first side and connected to a power supply terminal, a ground wiring line disposed on the substrate along a second side and connected to a ground terminal, and first to third half bridges each having a high-side switch and a low-side switch connected in series between the power supply wiring line and the ground wiring line. Connection points of the high-side switches and the low-side switches are connected to first to third motor terminals and also connected in parallel to one another. The first motor terminal, the second motor terminal, and the third motor terminal are disposed between the power supply terminal and the ground terminal.
    Type: Application
    Filed: January 26, 2018
    Publication date: February 18, 2021
    Applicant: SHINDENGEN ELECTRIC MANUFACTURING CO., LTD.
    Inventor: Yoshihiro KAMIYAMA
  • Publication number: 20210050795
    Abstract: An electronic module includes a shunt resistor having one end that is connected to one end of a first ground wiring line and another end that is connected to another end of a second ground wiring line. Signal terminals are disposed to be close to the shunt resistor, the signal terminals including a first current detection terminal electrically connected to the one end of the shunt resistor, and a second current detection terminal disposed to be close to the shunt resistor and electrically connected to the other end of the shunt resistor. The shunt resistor is disposed to be close to a first side of a substrate along which the signal terminals are arranged.
    Type: Application
    Filed: January 26, 2018
    Publication date: February 18, 2021
    Applicant: SHINDENGEN ELECTRIC MANUFACTURING CO., LTD.
    Inventor: Yoshihiro KAMIYAMA
  • Patent number: 10910292
    Abstract: An electronic device has a sealing part 90, an electronic element 95 provided in the sealing part 90 and a connection body 50 having a head part 40 connected to a front surface of the electronic element 95 via a conductive adhesive 75. The head part 40 has a second projection protruding 42 toward the electronic element 95 and a first projection 41 protruding from the second projection 42 toward the electronic element 95.
    Type: Grant
    Filed: February 20, 2017
    Date of Patent: February 2, 2021
    Assignee: SHINDENGEN ELECTRIC MANUFACTURING CO., LTD.
    Inventors: Soichiro Umeda, Yuji Morinaga
  • Patent number: 10906523
    Abstract: A controlling apparatus 1 according to an embodiment is a controlling apparatus of a hybrid vehicle 30 including a motor generator 3 that is mechanically connected to an internal combustion engine 2 and that can generate power in response to rotation of the internal combustion engine 2 and provide torque to the internal combustion engine 2, the controlling apparatus 1 including a rotation information acquiring unit 11 that acquires rotation information of the motor generator 3 with a higher resolution than rotation information of the internal combustion engine 2 and a power generation determining unit 12 that makes a determination regarding the power generation by the motor generator 3 based on the rotation information of the motor generator 3.
    Type: Grant
    Filed: September 9, 2016
    Date of Patent: February 2, 2021
    Assignees: Shindengen Electric Manufacturing Co., Ltd., Honda Motor Co., Ltd.
    Inventors: Takayuki Meguro, Mitsuhiro Kimura, Ryuichi Takao, Isao Shokaku
  • Patent number: D920937
    Type: Grant
    Filed: March 29, 2019
    Date of Patent: June 1, 2021
    Assignee: SHINDENGEN ELECTRIC MANUFACTURING CO., LTD.
    Inventors: Soichiro Umeda, Atsushi Kyutoku