Abstract: A wide gap semiconductor device has a wide gap semiconductor layer 10; and a metal electrode 20 disposed on the wide gap semiconductor layer 10. The metal electrode 20 has a monocrystalline layer 21 having a hexagonal close-packed (HCP) structure in an interface region between the metal electrode 20 and the wide gap semiconductor layer 10. The monocrystalline layer 21 has a specific element-containing region 22 containing O, S, P or Se.

Abstract: A semiconductor device is provided, including a seal portion; an electronic element within the seal portion; first, second, and third lead terminals; first and second connecting elements; and first and second conductive bonding agents, one end of the first connecting element having a protrusion downward and electrically connected to a control electrode of the electronic element with the first conductive bonding agent, a first side surface extending from the one end to the other end of the first connecting element is parallel to an extending direction along which the one end of the second connecting element extends, a wall portion being disposed on a top surface of the one end of the second lead terminal, and the wall portion being in contact with the other end of the first connecting element.

Abstract: An electronic module has a first substrate 11, a first electronic element 13, a second electronic element 23, a second substrate 21, a first terminal part 110 provided on a side of the first substrate 11 and a second terminal part 120 provided on a side of the second substrate 21. The first terminal part 110 has a first surface direction extending part 114 and a first normal direction extending part 113 extending toward one side or the other side. The second terminal part 120 has a second surface direction extending part 124 and a second normal direction extending part 123 extending toward one side or the other side. The second surface direction extending part 124 is provided on one side of the first surface direction extending part 114, and the first surface direction extending part 114 and the second surface direction extending part 124 overlap one another in a surface direction.

Abstract: A semiconductor device includes: a semiconductor base substrate including a semiconductor layer; a first main electrode; a second main electrode; a plurality of peripheral trenches formed on a surface of the semiconductor layer and having bottom portions covered by the semiconductor layer in a peripheral region; and a plurality of in-trench electrodes each embedded in each of the plurality of peripheral trenches byway of an insulation layer formed on an inner surface of the each peripheral trench, wherein the semiconductor base substrate further includes, in the peripheral region, a plurality of second conductive type floating regions disposed in the semiconductor layer at a depth position deeper than the bottom portions of the peripheral trenches in a spaced apart manner from the peripheral trenches and having a potential in a floating state.

Abstract: A wide gap semiconductor device has: a wide gap semiconductor layer; and a metal layer 20 provided on the wide gap semiconductor layer. The metal layer 20 has a single crystal layer 21 in an interface region at an interface with the wide gap semiconductor layer. When it is assumed that a lattice constant, in an equilibrium state, of a metal constituting the metal layer 20 is L, the single crystal layer 21 in the interface region includes a first region in which a lattice constant L1 is smaller than L by 1.5% to 8%.

Abstract: A semiconductor device including a substrate; a chip on which a surface electrode is formed; and a lead. The lead includes a first electrode connecting portion disposed on the surface electrode and electrically connected to the surface electrode of the chip via a conductive bonding material; a second electrode connecting portion electrically connected to an electrode portion of a wiring pattern. A lead connected to the first electrode connecting portion and the second electrode connecting portion. The lead further has a thermal shrinking stress equalizing structure on a portion of an outer periphery of the first electrode connecting portion. The lead is configured to make a thermal shrinking stress applied to a conductive bonding material between the first electrode connecting portion and the surface electrode equal.

Abstract: A terminal member connected to a connection target portion includes: a bent portion bent toward the connection target portion; and a tip connection portion provided at a tip part of the bent portion, in which the tip connection portion is connected to the connection target portion via a conductive bonding material.

Abstract: A semiconductor device includes: an insulating substrate; a first conductor portion and a second conductor portion that are formed on the insulating substrate; a semiconductor element disposed on the first conductor portion; a first terminal having a flat plate-shape that is connected to a first electrode of the semiconductor element; a second terminal having a flat plate-shape that is connected to the first conductor portion; and a sealing resin that seals the insulating substrate, the first conductor portion, the second conductor portion, and the semiconductor element. Each of the first terminal and the second terminal includes: an inner terminal portion disposed inside the sealing resin; and an outer terminal portion disposed in a state of being exposed to an exterior of the sealing resin, and a female thread portion is provided in the outer terminal portion of each of the first terminal and the second terminal.

Abstract: A semiconductor device includes: plural conductor portions formed on an insulating substrate; a semiconductor element disposed on one of the plural conductor portions on the insulating substrate; a support member that is disposed at a predetermined distance from one of the plural conductor portions on the insulating substrate; a columnar pin terminal that is supported by the support member and is connected to the one of the plural conductor portions on the insulating substrate from which the support member is disposed at the predetermined distance; and a sealing resin that seals the insulating substrate, the plural conductor portions, the semiconductor element, and the support member. The support member has a through-hole having a polygonal shape and penetrating in a plate thickness direction of the support member, and the pin terminal is supported by the support member in a state in which the pin terminal is inserted through the through-hole.

Abstract: A semiconductor device includes: an insulating substrate; a first conductor portion and a second conductor portion that are formed on the insulating substrate; a semiconductor element disposed on the first conductor portion; a first terminal that is connected to a first electrode of the semiconductor element; a second terminal that is connected to the first conductor portion; a connection member electrically connecting a control electrode of the semiconductor element and the second conductor portion to each other; a support member that is disposed at a predetermined distance from the second conductor portion; a pin terminal having that is supported in a state of being inserted through the support member and connected to the second conductor portion; and a sealing resin that seals the insulating substrate, the first conductor portion, the second conductor portion, the semiconductor element, the connection member, and the support member.

Abstract: An electronic module includes a power supply wiring line disposed on a substrate along a first side and connected to a power supply terminal, a ground wiring line disposed on the substrate along a second side and connected to a ground terminal, and first to third half bridges each having a high-side switch and a low-side switch connected in series between the power supply wiring line and the ground wiring line. Connection points of the high-side switches and the low-side switches are connected to first to third motor terminals and also connected in parallel to one another. The first motor terminal, the second motor terminal, and the third motor terminal are disposed between the power supply terminal and the ground terminal.

Abstract: An electronic module has an electronic element 210; a connection body 250 provided on a front face of the electronic element 210; and a detection part 100 having a winding wire part 10 provided so as to surround the connection body 250, and a winding return wire part 50 connected to a terminal end part of the winding wire part 10 and returns from the terminal end part toward a starting end part.

Abstract: A semiconductor module is configured to convert a direct current to a three-phase alternating current, and to supply the three-phase alternating current to a three-phase motor to drive the three-phase motor, wherein the first ground terminal GND1, the second ground terminal GND2, and the third ground terminal GND3 are arranged along the second side B2 to be separated from one another and electrically isolated from one another.

Abstract: A power module according to the present invention switches an operation mode between a control mode where an ON/OFF operation of a switching element having a first electrode, a second electrode, and a third electrode is controlled, and a deterioration determination mode where the deterioration is determined based on information including ?Vgs based on information including a threshold voltage detected before a stress current is supplied to the switching element and a threshold voltage detected after the stress current is supplied to the switching element. According to the power module of the present invention, the deterioration can be determined during an operation time and hence, breaking of the device can be prevented, and operation efficiency of the power module can be increased, and a manufacturing cost of the power module can be lowered.

Abstract: An electronic device includes: a substrate at which an electronic component is mounted; and a resin case configured to accommodate the substrate internally, in which: the case has an attachment portion configured to attach the case to a flat plate-shaped fixing portion of a fixture target by the fixing portion being inserted into the attachment portion and the attachment portion engaging with the fixing portion; the attachment portion has a first pressing portion having a convex portion that is inserted into a concave portion of the inserted fixing portion, and a pair of second pressing portions that hold between them respective side faces of the inserted fixing portion; and leading end sides of the pair of second pressing portions abut on the inserted fixing portion and are resiliently deformed in directions away from each other, holding between them the respective side faces of the fixing portion in a state in which the leading end sides have been resiliently deformed.

Abstract: An electronic module has a first electronic element 13, a first connector 60 provided in one side of the first electronic element 13, and having a first columnar part 62 extending to another side and a first groove part 64 provided in a one-side surface, and a second electronic element 23 provided in one side of the first connector 60 via a conductive adhesive agent provided inside a circumference of the first groove part 64. The first connector 60 has a first concave part 67 on one side at a position corresponding to the first columnar part 62.

Abstract: An electronic module has a first substrate 11, an electronic element 13, 23 disposed on one side of the first substrate 11, a second substrate 21 disposed on one side of the electronic element 13, 23, a first coupling body 210 disposed between the first substrate 11 and the second substrate 21, a second coupling body 220 disposed between the first substrate 11 and the second substrate 21, and shorter than the first coupling body 210, and a sealing part 90 which seals at least the electronic element. The first coupling body 210 is not electrically connected to the electronic element. The second coupling body 220 is electrically connected to the electronic element 13, 23.

Abstract: A wide gap semiconductor device has: a drift layer using wide gap semiconductor material being a first conductivity type; a well region being a second conductivity type and provided in the drift layer; a source region provided in the well region; a gate contact region provided in the well region and electrically connected to a gate pad; and a Zener diode region provided in the well region and provided between the source region and the gate contact region.

Abstract: An electronic device has a sealing part 90, a first terminal 11 projecting outward from a first side surface of the sealing part 90, a second terminal 13 projecting outward from a second side surface different from the first side surface of the sealing part 90, an electronic element 95 provided inside the sealing part 90, and a head part 40 coupled to the first terminal 11 and the second terminal and connected to a front surface of the semiconductor element 95 via a conductive adhesive 75.