Abstract: A stacked layer structure including a single crystal substrate; an amorphous or polycrystalline buffer layer formed from a boron-containing Group III-V compound semiconductor. The buffer layer is provided on the substrate; a cladding layer formed from a boron-containing Group III-V compound semiconductor is provided on the buffer layer; and a light-emitting layer having a quantum well structure including a barrier layer formed from a boron-containing Group III-V compound semiconductor and a well layer formed from a Group III nitride semiconductor is provided on the cladding layer. The barrier layer is formed from a boron-containing Group III-V compound semiconductor having the same lattice constant as a boron-containing Group III-V compound semiconductor constituting the cladding layer.

Abstract: The present invention provides a process for producing ultrafine particulate complex oxide containing titanium oxide, including vapor-phase producing a complex oxide containing titanium oxide having a BET specific surface area of about 5 to about 200 m2/g, where a starting material gas containing titanium tetrachloride and an oxidizing gas are preheated to about 700° C. or more, and are reacted with a solution or a slurry of a salt containing a metallic element. The present invention also provides an ultrafine particulate complex oxide containing titanium oxide obtained by the process, and use of the oxide.

Abstract: Particulates, particularly ultrafine particulates of titanium oxide having a BET specific surface area of from about 3 m2/g to about 200 m2/g, preferably from about 5 m2/g to about 200 m2/g, and more preferably from about 10 m2/g to about 200 m2/g are obtained using a vapor phase process of producing titanium oxide by oxidizing titanium tetrachloride with an oxidizing gas at a high temperature, wherein a titanium tetrachloride-containing gas and an oxidizing gas are reacted after preheating each gas at about 500° C. or more. The particulates, particularly ultrafine particulates of titanium oxide have less aggregation and have highly excellent dispersibility.

Abstract: A p-n junction-type compound semiconductor light-emitting device having a substrate formed of a single crystal, a first barrier layer provided on the substrate and formed of a compound semiconductor of a first conduction type, a light-emitting layer provided on the first barrier layer and formed of an indium (In)-containing group III nitride semiconductor of a first or a second conduction type, and an evaporation-preventing layer provided on the light-emitting layer for preventing the evaporation of indium from the light-emitting layer. The evaporation-preventing layer is formed of an undoped boron phosphide (BP)-base semiconductor of a second conduction type. A method for producing the semiconductor-light emitting device is also disclosed.

Abstract: A pn-junction-type semiconductor light-emitting device having a single-crystal silicon (Si) substrate of first conduction type; a first boron-phosphide-based semiconductor layer of first conduction type provided on the substrate; a light-emitting layer formed of a Group III-V semiconductor layer of first or second conduction type which is doped with an element belonging to Group IV of the periodic table provided on the first boron-phosphide-based semiconductor layer; and second boron-phosphide-based semiconductor layer of second conduction type formed of a boron-phosphide-based semiconductor layer of second conduction type containing a Group IV element provided on the light-emitting layer. The first boron-phosphide-based semiconductor layer, the light-emitting layer, and the second boron-phosphide-based semiconductor layer form a pn-junction-type hetero structure. In addition, the second conduction type is opposite the first conduction type. Also, disclosed is a method for producing the device.

Abstract: When a polybasic acid salt containing at least one species selected from the group consisting of an alkaline earth metal, a transition metal, and Al is caused to be present on the surfaces of titanium dioxide fine particles, there are obtained photocatalytic particles and powder exhibiting sufficent photocatalytic properties when irradiated with light from a light source of low quantity of light. By use of the photo-functional particles and powder, an organic polymer composition, a slurry, a coating agent, and a product having a surface exhibiting photocatalytic property and hydrophilicity are obtained.

Abstract: A magnetic recording medium exhibiting excellent read-write conversion characteristics, including a non-metallic substrate including, on its surface, texture grooves having a line density of 7,500 lines/mm or more; an orientation-determining film; a non-magnetic undercoat layer; and a magnetic layer in order is disclosed. A production process for the medium; and a magnetic recording and reproducing apparatus are also disclosed.

Abstract: A magnetic recording medium having a non-magnetic substrate; an orientation-regulating layer for regulating the crystal orientation of a layer provided directly thereon; a perpendicular magnetic layer in which easy-magnetization axes are oriented generally perpendicular to the substrate; and a protective layer is disclosed. The perpendicular magnetic layer is formed from a material containing Co as a primary component and at least Cr, Pt, and Nd. A process to produce the magnetic recording medium and a magnetic recording and reproducing apparatus are also disclosed.

Abstract: A solid electrolytic capacitor having a solid electrolytic capacitor element having an anode part assigned to one end part of an anode substrate composed of a valve-acting metal having on the surface thereof a dielectric film layer, and a cathode part including of a solid electrolyte layer formed on the dielectric film layer in the remaining portion of the anode substrate and having an electrically conducting layer formed thereon. The anode part is connected to a lead frame via a weld metal provided on the anode part of the solid electrolytic capacitor element by irradiating the anode part with a laser ray. Also disclosed is a method of producing the solid electrolytic capacitor.

Abstract: A boron-phosphide-based semiconductor light-emitting device having a semiconductor substrate of a first conduction type having, on its bottom surface, a bottom electrode; a first boron-phosphide-based semiconductor layer of a first conductive type provided on the substrate; a Group III-V compound semiconductor active layer provided on the first boron-phosphide-based semiconductor layer; a second boron-phosphide-based semiconductor layer of second conduction type provided on the active layer; and a top electrode provided on the surface of the second boron-phosphide-based semiconductor layer.

Abstract: A composite structure having a photocatalytic function and can be used for deodorization and wastewater treatment, comprising a foamed or porous substrate having apparent specific gravity of 0.9 to 0.01 and finely divided titanium oxide particles having a photocatalytic function which are adhered onto the surface of the foamed or porous substrate. Gas such as air having offensive odor or wastewater is allowed to be in contact with the composite structure having a photocatalytic function, whereby smelly or harmful substances contained in the gas or wastewater are decomposed.

Abstract: Silicon carbide single crystal is produced by allowing a silicon raw material to continuously react with a carbon raw material to generate gas, which reaches a seed crystal substrate on which a silicon carbide single crystal grows. Preferably, the silicon raw material is continuously fed onto the carbon raw material placed in a reaction crucible, and the carbon raw material is maintained at a temperature such that carbon is allowed to react with silicon in a molten state or a gaseous state to generate the reaction gas.

Abstract: A boron phosphide-based semiconductor device including a substrate having thereon an oxygen-containing boron phosphide-based semiconductor layer having boron and phosphorus as constituent elements and oxygen, and a production process therefor.

Abstract: When a chromium-iron-based alloy, preferably a chromium-iron-based alloy having a chromium content of about 60 to about 95 mass % is subjected to heat treatment at about 500 to about 1,300° C., and subsequently to grinding treatment by use of an impact mill, grindability of the chromium-iron-based alloy is improved, and running cost can be reduced. In addition, the resultant powdery thermal spraying material exhibits stable fluidity during spray coating, and thus a uniform coating can be formed.

Abstract: An earth-acid metal is alloyed, whereby a metal foil comprising an earth-acid metal as a main component, which surface can be roughened by etching, can be obtained. An alloy of niobium with at least one element selected from Groups 3 to 16 of the periodic table is preferred. This alloy foil is etched, whereby an etched foil having an etching magnification of about 50 times or more and containing pores having an average pore size of about 0.05 to about 3 &mgr;m to the depth corresponding to at least about 5% or more of the foil thickness can be obtained. A capacitor fabricated from this etched foil as at least one part electrode and a dielectric material interposed between this one part electrode and another part electrode, is also disclosed.

Abstract: A high emission intensity group-III nitride semiconductor light-emitting device obtained by eliminating crystal lattice mismatch with substrate crystal and using a gallium nitride phosphide-based light emitting structure having excellent crystallinity. A gallium nitride phosphide-based multilayer light-emitting structure is formed on a substrate via a boron phosphide (BP)-based buffer layer. The boron phosphide-based buffer layer is preferably grown at a low temperature and rendered amorphous so as to eliminate the lattice mismatch with the substrate crystal. After the amorphous buffer layer is formed, it is gradually converted into a crystalline layer to fabricate a light-emitting device while keeping the lattice match with the gallium nitride phosphide-based light-emitting part.

Abstract: A fine particle of aluminum hydroxide is disclosed, comprising a particulate aluminum hydroxide X having a specific surface area of 1.0 m2/g or less and a secondary particle size of 35 to 150 &mgr;m, a particulate aluminum hydroxide Y having a specific surface area of 1.0 m2/g or less and a secondary particle size of 10 to 35 &mgr;m and a particulate aluminum hydroxide Z having a specific area of 3.0 m2/g or less and a secondary particle size of 0.5 to 10 &mgr;m, in a compositional mass ratio falling in the area surrounded by four points of Point &agr;, Point &bgr;, Point &ggr; and Point &dgr; including the lines in the ternary composition diagram shown in FIG. 1. By this fine particle of aluminum hydroxide, a fine particle of aluminum hydroxide and a resin composition comprising the fine particle of aluminum hydroxide, which can be reduced in the viscosity at the filling in a resin and attain high filling and when filled in a thermosetting resin, can be shortened in the curing time, can be provided.

Abstract: An object of the present invention is to provide a method for producing at high productivity graphite powder containing no impurity, in which carbon powder material is effectively heated for graphitization; and an apparatus for producing the graphite powder. Carbon powder is placed in a carbon-made container, and the container is heated through a supply of electricity to the container. An apparatus comprising a heating chamber is provided. The container can be continuously conveyed to the apparatus, heated in the apparatus, and removed from the apparatus. Through use of the apparatus, graphite carbon powder which is suitably employed in a lithium-ion secondary battery can be produced.

Abstract: The present invention relates to a solid electrolytic capacitor comprising a solid electrolyte layer and an electrically conducting layer comprising metallic powder or an electrically conducting layer comprising an electrically conducting carbon layer and a layer formed thereon and comprising metallic powder in which at least one of said layers contains a rubber-like elastic material; a production process thereof; a solid electrolyte for use in the solid electrolytic capacitor; a production process of the solid electrolyte; an electrically conducting paste for use in the solid electrolytic capacitor; and an electrically carbon conducting paste for use in the solid electrolytic capacitor. The solid electrolytic capacitor of the present invention can be made compact and can be endowed with high-capacitance and low-impedance and is excellent in external force-relaxing properties, productivity, heat resistance and moisture resistance, etc.

Abstract: A niobium hydride or niobium hydride alloy is ground at a temperature of −200 to 30° C. in the presence of a dispersion medium to obtain a niobium powder for capacitors, having a low oxygen content, the niobium powder for capacitors is granulated to obtain a niobium granulated product for capacitors, having an average particle size of 10 to 500 &mgr;m, the niobium powder or granulated powder for capacitors is sintered to obtain a sintered body, and a capacitor is fabricated by forming a dielectric material on the surface of the sintered body and providing another part electrode on the dielectric material, whereby a capacitor having good LC characteristics and less dispersed in the LC characteristics is obtained.