Abstract: Disclosed are apparatus and methods related to junction ferrite devices having improved insertion loss performance. In some implementations, a ferrite disk assembly can be configured for a radio-frequency (RF) circulator. The disk assembly can include a ferrite-based disk having a ferrite portion and a metalized layer formed on a grounding surface of the disk to improve electrical contact between the grounding surface of the disk with an external grounding surface. The ferrite-based disk can further include a dielectric portion disposed around the periphery of the ferrite center portion. In some embodiments, the metalized layer can be a silver layer formed on the grounding surface of the disk and having a desired thickness.

Abstract: Circuits, devices and methods for achieving fast changes in voltage regulator outputs. In some embodiments, a voltage regulation system can include a voltage regulator configured to receive an input voltage Vin and generate an output voltage Vout at an output node, and to transition Vout between V1 and V2. The voltage regulation system can further include a transition circuit coupled to the output node. The transition circuit can include a first voltage source that is switchably coupled to the output node and configured to provide a voltage associated with one of the V1 and V2 voltages to the output node during at least the transition of the voltage regulator. The voltage provided by the first voltage source can be substantially equal to one of the V1 and V2 voltages.

Abstract: Aspects of the present disclosure relate to determining a layout of a racetrack that forms part of an RF isolation structure of a packaged module and the resulting RF isolation structures. The racetrack layout can be determined based on identifying low radiating areas of a module and/or areas of a module that are less sensitive to external radiation. The racetrack can be disposed below a surface of a module on which a radio frequency component is disposed. The racetrack and a conductive layer over the radio frequency component can form part of a radio frequency isolation structure around the RF component.

Abstract: Circuits and devices related to multi-harmonic control of amplified signals. In some embodiments, an amplifier circuit assembly can include an amplifier configured to provide a signal at an output. The amplifier circuit assembly can further include a matching network configured to provide impedance matching for the signal having a fundamental frequency, a broadband harmonic trap configured to substantially trap a plurality of harmonics associated with the fundamental frequency, and a dipole network configured to tune reactances associated with the broadband harmonic trap. The matching network, the broadband harmonic trap and the dipole network can be implemented in series from the output of the amplifier.

Abstract: Various implementations include circuits, devices and/or methods that provide open loop current limiting power amplifiers and the like. In some implementations, an open loop current clamp includes a trim module to provide a control value and a limiting source having respective input and output terminals. The input terminal is coupled to the trim module to receive the control value. The output terminal coupled to a control terminal of the first transistor to provide a limiting electrical level produced in response to the control value by the limiting source. The limiting electrical level substantially setting a first mode of operation for the first transistor such that the current draw of the first transistor is substantially determined by the first mode of operation and the limiting electrical level such that a voltage at an output terminal of the first transistor exerts reduced influence on the current draw.

Abstract: Aspects of this disclosure relate to systems and methods of performing dynamic impedance tuning. Certain aspects may be performed by or include a dynamic impedance matching network. The dynamic impedance matching network can determine a desired output power for a power amplifier, true power information for the power amplifier, and an output power delivered to a load by the power amplifier. In addition, the dynamic impedance matching network can determine whether the output power satisfies the true power information. Responsive to this determination, the dynamic impedance matching network may modify a load line impedance for the power amplifier using an impedance tuning network.

Abstract: Compression control through power amplifier load adjustment. A power amplifier module can include a power amplifier including a cascode transistor pair. The cascode transistor pair can include a first transistor and a second transistor. The power amplifier module can include a power amplifier bias controller including a current comparator configured to compare a first base current of the first transistor and a second base current of the second transistor to obtain a comparison value. The power amplifier module can include a saturation controller configured to supply a reference signal to an impedance matching network based on the comparison value. The impedance matching network can be configured to modify a load impedance of a load line in electrical communication with the power amplifier based at least in part on the reference signal.

Abstract: Power amplification system with adjustable common base bias. A power amplification system can include a first transistor having a base coupled to a radio-frequency input. The power amplification can further include a second transistor having an emitter coupled to a collector of the first transistor and having a collector coupled to a radio-frequency output. The power amplification system can include a biasing component configured to apply a fixed biasing signal to the base of the first transistor and to apply an adjustable biasing signal to the base of the second transistor.

Abstract: Aspects of this disclosure relate to a mode linearization switch circuit that can adjust an effective impedance provided to an output of an amplifier. In an embodiment, an apparatus includes an amplifier configured to amplify a radio frequency (RF) signal and a mode linearization switch circuit electrically coupled to an output of the amplifier. The mode linearization switch circuit can include a capacitor, a switch in series with the capacitor, and a series LC circuit in parallel with the switch.

Abstract: One aspect of this disclosure is a power amplifier module that includes a power amplifier die including a power amplifier configured to amplify a radio frequency (RF) signal, the power amplifier including a heterojunction bipolar transistor (HBT) and a p-type field effect transistor (PFET), the PFET including a semiconductor segment that includes substantially the same material as a layer of a collector of the HBT, the semiconductor segment corresponding to a channel of the PFET; a load line electrically connected to an output of the power amplifier and configured to provide impedance matching at a fundamental frequency of the RF signal; and a harmonic termination circuit electrically connected to the output of the power amplifier and configured to terminate at a phase corresponding to a harmonic frequency of the RF signal. Other embodiments of the module are provided along with related methods and components thereof.

Abstract: Disclosed are devices and methods related to a CMOS switch for radio-frequency (RF) applications. In some embodiments, the switch can be configured to include a resistive body-floating circuit to provide improved power handling capability. The switch can further include an electrostatic discharge (ESD) protection circuit disposed relative to the switch to provide ESD protection for the switch. Such a switch can be implemented for different switching applications in wireless devices such as cell phones, including band-selection switching and transmit/receive switching.

Abstract: Methods for improving thermal performance, such as thermal dissipation, of flip chip packages that include one or more flip chip dies are disclosed. In some embodiments, a thermal collection layer can be formed on a surface of a flip chip die. The thermal collection layer can be configured to dissipate heat generated by the flip chip die. In some variations, the thermal collection layer can be constructed using materials having high thermal conductivity.

Abstract: A decoder for a radio-frequency module includes a control signal output, first control signal generator circuitry configured to receive an input signal indicating an operational state of a radio-frequency core communicatively coupled to the decoder, and generate an output control signal for controlling one or more radio-frequency devices of the radio-frequency core, second control signal generator circuitry configured to generate an intermediate output signal, and transition detection circuitry configured to receive a least a portion of the input signal and selectively provide the intermediate output signal on the control signal output when the input signal indicates a transition of the radio-frequency core for a first operational state of a first group of operational states to a second operational state of a second group of operational states.

Abstract: A radio frequency (RF) power combining amplifier circuit has a circuit input and a circuit output. A first amplifier is connected to the circuit input and to a first bias input. A first output matching network is connected to an output of the first amplifier and to the circuit output. A second amplifier is connected to the circuit input and to a second bias input. A second output matching network is connected to an output of the second amplifier, and to the circuit output. A voltage level of an input signal applied to the circuit input, together with the respective first bias input and the second bias input, selectively activates the first amplifier and the second amplifier.

Abstract: Radio-frequency (RF) switch circuits are disclosed providing improved switching performance. An RF switch system includes at least one field-effect transistor (FET) disposed between a first node and a second node, each having a respective source, drain, gate, and body. The system includes a coupling circuit including a first path and a second path, the first path being between the respective source or the respective drain and the respective gate of the at least one FET, the second path being between the respective source or the respective drain and the respective body of the at least one FET. The coupling circuit may be configured to allow discharge of interface charge from either or both of the coupled gate and body.

Abstract: Voltage supply system with boost converter and charge pump. A voltage supply system can include a boost converter controllable to receive an input voltage at an input node and generate an output voltage when the output voltage is greater than or equal to the input voltage. The voltage supply system can include a charge pump controllable to receive the input voltage at the input node and generate the output voltage when the output voltage is less than the input voltage. The voltage supply system can further include a controller configured to receive a control signal and control the boost converter or the charge pump to generate the output voltage at an output node based on the control signal.

Abstract: This disclosure relates to a transmission line for high performance radio frequency (RF) applications. One such transmission line can include a bonding layer configured to receive an RF signal, a barrier layer, a diffusion barrier layer, and a conductive layer proximate to the diffusion barrier layer. The diffusion barrier layer can have a thickness that allows a received RF signal to penetrate the diffusion barrier layer to the conductive layer. In certain implementations, the diffusion barrier layer can be nickel. In some of these implementations, the transmission line can include a gold bonding layer, a palladium barrier layer, and a nickel diffusion barrier layer.

Abstract: Cascode power amplifier with voltage limiter. A power amplification system can include an input transistor having an input transistor gate configured to receive a radio-frequency (RF) signal, an input transistor source coupled to a ground voltage, and an input transistor drain. The power amplification can further include an output transistor having an output transistor drain configured to output an amplified version of the RF signal, an output transistor gate coupled to a bias voltage, and an output transistor source. The power amplification system can further include a high voltage limiter coupled between the output transistor drain and output transistor gate. The high voltage limiter can be configured to prevent a gate-drain voltage of the output transistor from exceeding a high voltage threshold.

Abstract: In semiconductor switches, the isolation can be limited by the capacitive coupling between the switch input and the switch output. Ultra-high isolation can be achieved by adding a coupled transmission line to the semiconductor switch. The coupled transmission line introduces inductive coupling, which cancels at least a part of the capacitive coupling between the switch input and the switch output.

Abstract: A device includes a controller and an adaptive continuous-time filter that includes a control input and a first array of elements. The controller generates a digital word responsive to a time constant and compares a select bit of the digital word to a corresponding reference word to generate a control bit. The controller includes a duplicate array of elements, and applies the control bit to an adjustable element of the duplicate array of elements to modify the time constant. The controller provides the output word to the control input of the adaptive continuous-time filter to generate a filter response that accounts for effects of semiconductor process variation in the first array of elements.