Abstract: The invention is aimed at improving the spectral response of a photoconductive structure intended to receive a luminous radiation and comprising a substrate (3), an electrically conductive transparent layer (5), a photoelectric conversion semiconductive layer (7) in which is incorporated at least one complementary semiconductive sublayer (13a, 13b, 13c) which has an optical absorption threshold and an electrical charge diffusion length which are lower than those of the materials constituting the photoelectric conversion layer, According to the invention, the complementary sublayers (13a, 13b, 13c, etc.) are incorporated in the immediate neighborhood of several of the regions where the square of the optical electrical field of the stationary waves produced by the combination of the incident and reflected luminous radiations is at a maximum. The invention applies in particular to the manufacture of solar cells and other photoreceptive structures.