Abstract: In accordance with an embodiment, a method includes: producing a set of delayed replicas of a reference clock signal, wherein delayed replicas in the set of delayed replicas have respective signal edges delayed in time by a mutual time delay therebetween; producing a set of edge detecting signals comprising edge detecting signals indicative of respective distances of edges of delayed replicas in the set of delayed replicas from an edge of a clock signal having a clock period; selecting based on edge detecting signals in the set of edge detecting signals a delayed replica in the set of delayed replicas having a distance from the clock signal edge that is shorter than the distance from the clock signal edge of any other delayed replica in the set of delayed replicas.

Abstract: The present disclosure relates to a switched-mode Power Supply Buck Converter comprising: a switch connected between a node receiving a supply potential and an internal node; another switch connected between the internal node and a node receiving a reference potential; an inductive element coupling the internal node to an output node; and a control circuit controlling the switches so that current pulses in the inductive element have a maximum value selected from among at least a first value and a second value based on an average current drawn at the output node.

Abstract: In accordance with an embodiment, a digital-to-analog converter (DAC) includes: a W-2W current mirror that includes a first plurality of MOS transistors having a first width, and second plurality of MOS transistors having a second width that is twice the first width, where ones of the second plurality of MOS transistors are coupled between drains of adjacent ones of the first plurality of MOS transistors; and a bulk bias generator having a plurality of output nodes coupled to corresponding bulk nodes of the first plurality of MOS transistors, wherein the plurality of output nodes are configured to provide voltages that are inversely proportional to temperature.

Abstract: A system includes at least one first application and a shared software platform. The shared software platform identifies each first application a first random number. The first random number is stored in encrypted fashion in an executable code of the first application. The first application is further identified by a second number which is representative of the first random number. The second number is stored in a first portion of a memory only accessible to the shared software platform.

Abstract: A buffer circuit for driving a GaN power switch includes an input node to receive an input signal and an output node to produce a gate signal for the GaN power switch. The buffer includes a push-pull stage that includes a first transistor coupled between a supply voltage node and the output node, a second transistor coupled between the supply voltage node and the output node, a third transistor coupled between the output node and a reference voltage node, and a fourth transistor coupled between the output node and the reference voltage node. The buffer includes a pre-buffer stage configured to receive the input signal and to produce respective driving signals for the first, second, third and fourth transistors to produce the gate signal at the output node in four consecutive phases.

Abstract: A PMUT includes a substrate being doped and having a plurality of conductive vias formed therein, each conductive via formed of a portion of the substrate extending completely from a back side of the substrate to a front side of the substrate and being encircled by an isolating structure that electrically isolates that portion of the substrate from other portions of the substrate. An insulating layer stacked on the front side of the substrate and has through-holes therein over the plurality of conductive vias. An interconnection layer is stacked on the insulating layer and is connected to the plurality of conductive vias. A membrane carried is by the interconnection layer and underlying substrate, the membrane being shaped so as to delimit a chamber. A piezoelectric stack formed on the membrane over the chamber and vibrates the membrane in response to application of an alternating voltage to the piezoelectric stack.

Abstract: A system for performing scan testing on a device core uses a test access port (TAP). The TAP includes a test clock (TCK) pin, a test data in (TDI) pin, and a test mode select (TMS) pin, along with a test control register (TCR) associated with it. The TCR is used to set a scan mode signal, which configures the scan flip flops within the device core for scan testing and performs the scan testing on the device core. The TCR can also be reset to exit the scan testing, with the reset being triggered by a reset circuit receiving the deassertion of both a scan enable (SE) signal and a scan input (SI) signal during the capture-phase of scan testing.

Abstract: A wafer includes a semiconductor substrate, an interconnection network provided with metal layers and at least one ultra-low dielectric constant dielectric layer, at least one contact region and at least one dicing region. A hard mask is formed having a pattern that defines a dicing line. The formation of the hard mask includes a first etching of an opening in the dicing region to expose the semiconductor substrate in the dicing region, a second etching of an opening in the contact region to expose a surface of a metal contact in the contact region, and a chemical treatment for cleaning the uncovered surface of the metal contact. A vertical dielectric layer is deposited to cover edges of the opening defining the dicing line. This layer is deposited before the chemical treatment is performed.

Abstract: The present description concerns a method of checking a first data element, executed by an electronic device comprising a processor and a memory, wherein said first data element is not stored in said memory and is divided in N second data elements independent from the first data element, each second data element being stored in said memory, and a result of an application of a XOR function to the N second elements being equal to the first data element, wherein an image of the first data element by a CRC function linear with respect to the XOR function is stored in said memory, and said method comprising a step, executed by said processor, of checking if said image of the first data element by said CRC function is equal to an application of the XOR function to the images of N second elements by said CRC function.

Abstract: A system on chip (SoC) includes a CPU, a main bus, and a plurality of subsystems. The SoC also includes an address remapping module coupled between the CPU and the bus. The address remapping module quickly and efficiently changes any memory addresses that need to be changed with the CPU requests a read or write operation associated with the addresses.

Abstract: The present disclosure relates to a method of manufacturing first electronic components, each comprising a second electronic component, each second component comprising at least two contact metallizations, the method comprising: a) forming, on a substrate, at least two metal pillars; b) forming, over a portion of the surface of each pillar, a metallization of the component; c) covering the surface of the substrate, the pillars, and the metallizations of the first components with a first resin layer; d) removing the substrate to expose a surface of the pillars, opposite to the metallizations of the components; e) bonding and electrically connecting the second components, by their metallizations, to the surface of the pillars opposite to the metallizations of the first components; and f) expose the surface of the metallizations of the first components opposite to the pillars.

Abstract: The present description concerns a method of checking a first data element, executed by an electronic device comprising a processor and a memory, wherein the first data element is divided in N second data elements being stored in the memory, and first data element being equal to the sum, modulo the dimension of a space comprising the first data element, of the N second data elements, wherein an image of the first data element by a LCG function is stored in the memory, and the method comprising a step of checking if the image of the first data element by the LCG function is equal to the sum, modulo the module of the LCG function, of a product of an integer varying from 0 to N?1 and an image of the dimension by the LCG function, and of the images of the second data elements by the LCG function.

Abstract: An integrated circuit chip is bonded to a support. The chip includes a first connection pad and two second connection pads. The support includes a third connection pad and two fourth connection pads. A stack layers includes first, second, and third conductive layers and insulating layers. The first, second, and third conductive layers are separated from one another by the insulating layers. The second conductive layer is positioned between the first and third conductive layers. The first and third conductive layers electrically connect the two second connection pads to the two fourth connection pads. The second conductive layer electrically connects the first connection pad to the third connection pad.

Abstract: A voltage converter includes a circuit formed by a parallel association, connected between first and second nodes, of a first branch and a second branch. The first branch includes a first controlled rectifying element having a first impedance. The second branch includes a resistor associated in series with a second rectifying element having a second impedance substantially equal to the first impedance. The second rectifying element may, for example, be a triac having its gate coupled to receive a signal from an intermediate node in the series association of the second branch. Alternatively, the second rectifying element may be a thyristor having its gate coupled to receive a signal at the anode of the thyristor.

Abstract: A cell includes a Z2-FET-type structure that is formed with two front gates extending over an intermediate region between an anode region and a cathode region. The individual front gates of the two front gates are spaced apart by a distance that is shorter than 40% of a width of each individual front gate.

Abstract: An integrated circuit includes a semiconductor substrate, a conductive layer above a front face of the substrate, a first metal track in a first metal level, and a pre-metal dielectric region located between the conductive layer and the first metal level. A metal-insulator-metal-type capacitive structure is located in a trench within the pre-metal dielectric region. The capacitive structure includes a first metal layer electrically connected with the conductive layer, a second metal layer electrically connected with the first metal track, and a dielectric layer between the first metal layer and the second metal layer.

Abstract: A LED driver chip includes driver circuits, each being coupled to a different pin and including a fault-detection circuit. Each fault-detection circuit includes a force circuit forcing current to a force node, and a sense circuit including a current sensor coupled to the force node, and a comparator comparing a voltage at the force node to a reference voltage to generate a comparison output. Control circuitry, in a pin-to-pin short detection mode, activates the force circuit of a first of the driver circuits and activates thep sense circuit of a second of the driver circuits, in a pin-to-ground short detection mode, activates the force and the sense circuit of the same driver circuits. The comparison output of the comparator of the activated sense circuit, if is higher or if lower of the reference voltage, indicates if short between pin or to ground, respectively, is present.

Abstract: An integrated power device includes a heterostructure, having a channel layer and a barrier layer, a source contact, a drain contact, and a gate region, arranged on the barrier layer between the source contact and the drain contact. An insulating field structure is arranged on the barrier layer between the gate region and the drain contact. A field plate extends over the insulating field structure. The insulating field structure includes a first dielectric region made of a first dielectric material on the barrier layer and a second dielectric region made of a second dielectric material, selectively etchable with respect to the first dielectric material on the first dielectric region. On a side of the insulating field structure towards the gate region, the field plate is in contact with the first dielectric region.

Abstract: The present disclosure is directed to arranging user data memory cells and test memory cells in a configurable memory array that can perform both differential and single ended read operations during memory start-up and normal memory use, respectively. Different arrangements of the user data memory cells and the test memory cells in the memory array result in increased effectiveness of memory array, in terms of area optimization, memory read accuracy and encryption for data security.

Abstract: The present disclosure relates to an USB PD-type interface including a first node receiving a first potential, a second node delivering a second potential, and a third node at a reference potential; a resistor connected between a fourth node coupled to the first node, and a fifth node; a MOS transistor connected between the fifth node and the second node; a bipolar transistor having a collector connected to a gate of the MOS transistor and an emitter connected to the fourth node or to the fifth node; and a circuit configured to deliver a control potential to a base of the bipolar transistor determined from a current in the first resistor.