Abstract: A process or apparatus for producing polyethylene with improved film thinning and handleability involves polymerizing high-pressure ethylene using an autoclave-type reactor in the presence of a polymerization initiator. The reaction zone of the reactor has at least two different temperature sections; the polymerization initiator and the ethylene are supplied to the upstream temperature section in the reaction zone and the ethylene is polymerized to generate polyethylene; unreacted ethylene and the polyethylene generated at the upstream temperature section in the reactor flow into the downstream temperature section in communication with the upstream temperature section, so that additional polyethylene is generated at the downstream temperature section. A difference (?T [° C.]) between a temperature (T1 [° C.]) of the temperature section positioned upstream and a temperature (T2 [° C.

Abstract: The present disclosure provides a light emitting device having an anode and a cathode, and a first layer and a second layer disposed between the anode and the cathode.

Abstract: The present disclosure provides a light emitting device having an anode and a cathode, and a first layer and a second layer disposed between the anode and the cathode.

Abstract: The present invention provides a cured film of a mixed composition of an organosilicon compound (A) including a fluoropolyether structure and an organosilicon compound (C) having an amino group or an amine skeleton, in which, when the elements constituting one side surface (W) of the cured film and amounts thereof are measured by X-ray photoelectron spectroscopy (XPS), the cured film has an F content of 60 atom % or more and an O content of 17 atom % or more.

Abstract: A sensor including a detection film formed from a resin composition, a first electrode provided on a first surface of the detection film, and a second electrode provided on a second surface of the detection film, wherein the first surface of the detection film includes a rough surface having fine irregularities with a root mean square roughness (Rq) of 0.3 ?m to 3.0 ?m in a portion that is in contact with the first electrode.

Abstract: A liquid crystal polyester fiber includes a liquid crystal polyester having a tensile strength is 25 cN/dtex to 30 cN/dtex, and an orientation degree of the fiber is 94% to less than 100%. The liquid crystal polyester has repeating units of Formula (1), Formula (2), and Formula (3). At least one repeating unit of Formula (1), Formula (2), and Formula (3) contains 2,6-naphthylene. A content of the repeating unit containing the 2,6-naphthylene is 68 to 80 mol % with respect to a total content of all the repeating units. The liquid crystal polyester fiber has a fiber diameter of 5 to 100 ?m; (1) —O—Ar1—CO—, (2) —CO—Ar2—CO—, and (3) —X—Ar3—Y—, wherein Ar1 represents phenylene, naphthylene, or biphenylylene, Ar2 and Ar3 each independently represent phenylene, naphthylene, or biphenylylene, Ar1, Ar2, or Ar3 contains 2,6-naphthylene, X and Y independently represent oxygen or —NH—, and Ar1, Ar2, or Ar3 may be substituted.

Abstract: Provided are an acrylic resin layer laminate having excellent impact resistance and a manufacturing method of the same. The laminate includes a first acrylic resin layer, a thermoplastic resin layer, and a second acrylic resin layer in this order, in which the thermoplastic resin layer contains 71% or more of a component having a spin-spin relaxation time T2H in pulse NMR measurement of 0.03 ms or longer. The manufacturing method of the laminate includes: discharging, from a die, a molten resin laminate containing at least a melt of a resin composition (1) containing a (meth)acrylic resin, a melt of a resin composition containing a thermoplastic resin, and a melt of a resin composition (2) containing a (meth)acrylic resin; and cooling the discharged molten resin laminate to obtain a laminate.

Abstract: The present disclosure provides a light emitting device having an anode and a cathode, and a first layer and a second layer disposed between the anode and the cathode.

Abstract: The present disclosure relates to a light-emitting composition containing a perovskite compound and inorganic fine particles.

Abstract: There is provided a temperature sensor element including a pair of electrodes and a temperature-sensitive film disposed in contact with the pair of electrodes, in which the temperature-sensitive film includes a matrix resin and a plurality of conductive domains contained in the matrix resin, the conductive domains include a conjugated polymer and a dopant, and the number of structural units constituting the conjugated polymer is 65 or less.

Abstract: A light emitting device contains an anode, cathode, and two organic layers provided therebetween. One organic layer contains a phosphorescent compound, the second organic layer contains a block copolymer containing an end group, a block that binds to the end group and/or a block that does not bind to the end group, and a crosslinked product of the block copolymer. The non-terminal block contains a non-crosslinkable unit represented by the formula (X) and/or a non-crosslinkable unit represented by the formula (Z). At least one of XI>XII; ZI>ZII; XI+ZI>XII+ZII is satisfied when the total number of units having formula (X) and the total number of units having formula (Z) in the non-terminal block are XI and ZI, respectively, and the total number of units having formula (X) and the total number of units having formula (Z) in the terminal block are XII and ZII, respectively.

Abstract: To provide a thermoelectric conversion module member which has a high connecting property between a thermoelectric conversion layer and a diffusion prevention layer and is also excellent in heat resistance. A thermoelectric conversion module member comprising a thermoelectric conversion layer and a diffusion prevention layer in contact with the above-described thermoelectric conversion layer, wherein the above-described thermoelectric conversion layer is a layer containing a thermoelectric conversion material having a silicon element or a tellurium element, the above-described diffusion prevention layer is a layer containing a metal and the same thermoelectric conversion material as that contained in the above-described thermoelectric conversion layer, and the amount of the above-described thermoelectric conversion material in the above-described diffusion prevention layer is 10 to 50 parts by weight with respect to 100 parts by weight of the above-described metal.

Abstract: A liquid composition comprises two or more pesticidal active compounds, a hydrophobic organic solvent, a first surfactant and water. The two or more pesticidal active compounds are a first ingredient which is a compound represented by the following formula (I), and second ingredient consisting of one or more pesticidal active compounds that differ from the first ingredient, are poorly water-insoluble, and are solid at a temperature of 25° C. The first surfactant is a polyoxyethylene polyoxypropylene block copolymer.

Abstract: Provided is a pesticidal composition comprising a compound represented by the formula (I), an organic solvent having a water solubility at 25° C. of 10 mass % or less, a surfactant and water, wherein the pesticidal composition contains an aqueous phase and particles of an oil phase dispersed in the aqueous phase, the oil phase contains the organic solvent and the compound represented by the formula (I) dissolved or suspended in the organic solvent, and a volume median diameter of the particles is 0.10 ?m or larger and 11 ?m or smaller.

Abstract: Provided is a film including a thermoplastic resin, in which a relative permittivity of the film at a frequency of 1 GHz is 3 or less, a dielectric loss tangent of the film at a frequency of 1 GHz is 0.005 or less, and a molecular orientation (MOR) value of the film, which is measured by a microwave orientation meter, is in a range of 1 to 1.1.

Abstract: A composition containing a p-type semiconductor material and an n-type semiconductor material, an insulating material; and a solvent, wherein the n-type semiconductor material contains a non-fullerene compound, the insulating material is preferably a material that dissolves in an amount of 0.1 wt % or more at 25° C. in a solvent, preferably contains a polymer containing a constituent unit represented by Formula (I): wherein Ri1 represents a hydrogen atom, a halogen atom, or an alkyl group having 1 to 20 carbon atoms, and Ri2 represents a hydrogen atom, a halogen atom, an alkyl group having 1 to 20 carbon atoms, a group represented by the following Formula (II-1), a group represented by the following Formula (II-2), or a group represented by the following Formula (II-3).

Abstract: A microcapsule contains a core material included in a coating made of a resin, the core material including a liquid with a compound represented by the following formula (1) dissolved or suspended in an adjuvant, wherein a ratio between a weight of the core material and a weight of the coating (weight of the core material/weight of the coating) is 9 or more and 7999 or less:

Abstract: The present invention provides a mixed composition of an organosilicon compound (C) having an amino group or an amine skeleton, a solvent 1, and a solvent 2, in which, when the ratio of the hydrogen bond term (?H) to the dispersion term (?D) in the Hansen solubility parameters is defined as ?H/?D, the ratio (?H/?D) for the solvent 1 is less than 0.410 and the ratio (?H/?D) for the solvent 2 is 0.410 or more.

Abstract: A method for producing conjugated diene rubber is provided, including: a first step of obtaining a conjugated diene polymer chain having an active end by polymerizing a monomer comprising a conjugated diene compound and a vinyl compound having a functional group interactive with silica using a polymerization initiator in an inert solvent; a second step of reacting a siloxane compound with the active end of the conjugated diene polymer chain having the active end; and a third step of reacting a hydrocarbyloxysilane compound with the conjugated diene polymer chain with which the siloxane compound has been reacted that is obtained in the second step.

Abstract: This light detecting element has a simple configuration, and is highly sensitive to a prescribed wavelength region. The light detecting element comprises a positive electrode, a negative electrode, and an active layer that is provided between the positive electrode and the negative electrode, and that includes a p-type semiconductor material and n-type semiconductor material. The thickness of the active layer is at least 800 nm. The weight ratio between the p-type semiconductor material and the n-type semiconductor material included in the active layer (p/n ratio) is at most 99/1. The work function of the negative electrode side surface in contact with the active layer is lower than the absolute value of the LUMO energy level of the n-type semiconductor material.