Patents Assigned to Sumitomo Electric Industries, Ltd.
  • Patent number: 11956936
    Abstract: A shielded cable includes a first insulated wire including a first central conductor, and a first insulating layer provided around the first central conductor, a second insulated wire including a second central conductor, and a second insulating layer provided around the second central conductor, the second insulated wire being disposed parallel to the first insulated wire, a third insulating layer provided around the first insulated wire and the second insulated wire, a shielding layer provided around the third insulating layer, a drain wire in contact with the shielding layer, and a fourth insulating layer provided around the shielding layer and the drain wire.
    Type: Grant
    Filed: August 30, 2022
    Date of Patent: April 9, 2024
    Assignee: SUMITOMO ELECTRIC INDUSTRIES, LTD.
    Inventor: Yuto Kobayashi
  • Patent number: 11955251
    Abstract: An electrically conductive GaAs crystal has an atomic concentration of Si more than 1×1017 cm?3, wherein density of precipitates having sizes of at least 30 nm contained in the crystal is at most 400 cm?2. In this case, it is preferable that the conductive GaAs crystal has a dislocation density of at most 2×10?2 cm2 or at least 1×10?3 cm2.
    Type: Grant
    Filed: April 19, 2021
    Date of Patent: April 9, 2024
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Takashi Sakurada, Tomohiro Kawase
  • Publication number: 20240113245
    Abstract: A semiconductor photodetector includes an optical absorption layer. The optical absorption layer includes a plurality of unit structures stacked in a first direction, each of the plurality of unit structures includes a laminate and a gallium arsenide antimonide layer, the laminate includes a first gallium arsenide layer including j gallium arsenide monolayers, a first indium arsenide layer including m indium arsenide monolayers, k stacked structures, and a second gallium arsenide layer including (j?1) gallium arsenide monolayers, each of the k stacked structures includes a third gallium arsenide layer including n gallium arsenide monolayers, and a second indium arsenide layer including m indium arsenide monolayers, j, m, and n are each an integer of 1 or more, and k is an integer of 0 or more.
    Type: Application
    Filed: September 6, 2023
    Publication date: April 4, 2024
    Applicant: Sumitomo Electric Industries, Ltd.
    Inventor: Takashi KATO
  • Publication number: 20240111097
    Abstract: A spot size converter includes a first optical waveguide, and a second optical waveguide. The first optical waveguide has a first tapered portion. The first tapered portion extends in a direction in which the first optical waveguide extends, and is thicker with decreasing distance from an end portion of the first optical waveguide and is thinner with decreasing distance from the second optical waveguide. The second optical waveguide is separated from the first tapered portion and has a second tapered portion. The second tapered portion extends in a direction in which the second optical waveguide extends, and is thinner with decreasing distance from the first tapered portion and is thicker with increasing distance from the first tapered portion.
    Type: Application
    Filed: September 6, 2023
    Publication date: April 4, 2024
    Applicant: Sumitomo Electric Industries, Ltd.
    Inventors: Kunio KOBAYASHI, Yasutaka MIZUNO
  • Publication number: 20240113244
    Abstract: A semiconductor photodetector includes a first group III-V semiconductor layer of a first conductivity type; a second group III-V semiconductor layer of a second conductivity type; and an optical absorption layer disposed between the first group III-V semiconductor layer and the second group III-V semiconductor layer in a first direction. The optical absorption layer includes a plurality of unit structures stacked in the first direction. Each of the plurality of unit structures includes a gallium arsenide layer, an indium arsenide layer, and a gallium arsenide antimonide layer. The gallium arsenide layer and the indium arsenide layer each have a thickness smaller than a thickness of the gallium arsenide antimonide layer.
    Type: Application
    Filed: September 6, 2023
    Publication date: April 4, 2024
    Applicant: Sumitomo Electric Industries, Ltd.
    Inventor: Takashi KATO
  • Publication number: 20240114028
    Abstract: A detection device includes: a monitoring unit configured to monitor a periodic message and an event message as messages in an in-vehicle network, each message having, assigned thereto, identification information of a transmission source and a sequence number; a counter unit configured to change a counter value corresponding to the identification information, when the detection device has received the event message from the in-vehicle network; and a detection unit configured to compare the sequence number with the counter value, based on a result of monitoring, and perform provisional determination for detection of an unauthorized message, based on a result of the comparison. The detection unit performs conclusive determination for detection of the unauthorized message, based on an interval of messages that satisfy a predetermined condition regarding the sequence number, among messages to which the same identification information is assigned, and on a predetermined transmission cycle of the periodic message.
    Type: Application
    Filed: September 8, 2021
    Publication date: April 4, 2024
    Applicants: Sumitomo Electric Industries, Ltd., Sumitomo Wiring Systems, Ltd., AutoNetworks Technologies, Ltd.
    Inventors: Hiroyuki TSUKAMOTO, Hiroshi UEDA
  • Publication number: 20240111008
    Abstract: A diamond sensor unit includes: a sensor part that includes a diamond having a color center with electron spin; an irradiation part that irradiates the diamond with excitation light; a detection part that detects radiated light from the color center of the diamond; and an optical waveguide that transmits the excitation light, and the radiated light.
    Type: Application
    Filed: January 26, 2022
    Publication date: April 4, 2024
    Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.
    Inventors: Yoshiki NISHIBAYASHI, Hiromi NAKANISHI, Hiroshige DEGUCHI, Tsukasa HAYASHI, Natsuo TATSUMI
  • Patent number: 11945382
    Abstract: A system including: one or a plurality of sensors correspondingly connected to each of a plurality of devices; a reception unit configured to receive sensor information corresponding to a detection signal of each of the one or plurality of sensors, the sensor information being transmitted from the plurality of devices; a plurality of processing units configured to process the sensor information received by the reception unit; and a control unit configured to input the sensor information received by the reception unit, to any of the plurality of processing units, on the basis of information about delay in communication of the sensor information.
    Type: Grant
    Filed: March 30, 2018
    Date of Patent: April 2, 2024
    Assignee: SUMITOMO ELECTRIC INDUSTRIES, LTD.
    Inventor: Akihiro Ogawa
  • Patent number: 11949111
    Abstract: In a lithium ion secondary battery (1), a positive electrode (2) and a negative electrode (3) are alternately adjacent to each other via separators (4) and (5). The positive electrode (2) includes a positive electrode current collector composed of a metal porous body, a first positive electrode active material (21) held on one side of the positive electrode current collector, and a second positive electrode active material (22) held on the other side. The negative electrode (3) includes a negative electrode current collector composed of a metal porous body, a first negative electrode active material (31) held on one side of the negative electrode current collector, and a second negative electrode active material (32) held on the other side. The first positive electrode active material (21) faces the first negative electrode active material (31), and the positive electrode active material (22) faces the second negative electrode active material (32).
    Type: Grant
    Filed: May 9, 2019
    Date of Patent: April 2, 2024
    Assignees: HONDA MOTOR CO., LTD., SUMITOMO ELECTRIC INDUSTRIES, LTD.
    Inventors: Kiyoshi Tanaami, Akihisa Tanaka, Shintaro Aoyagi, Kazuki Okuno, Akihisa Hosoe, Kikuo Senoo, Hiroshi Takebayashi
  • Patent number: 11947161
    Abstract: A resin composition comprises: a base resin containing an oligomer, a monomer, and a photopolymerization initiator; and inorganic oxide particles, wherein the inorganic oxide particles are lump-shaped aggregated particles, and the volume average particle size of the inorganic oxide particles measured by an X-ray small angle scattering method is 5 nm or more and 800 nm or less.
    Type: Grant
    Filed: June 5, 2020
    Date of Patent: April 2, 2024
    Assignee: SUMITOMO ELECTRIC INDUSTRIES, LTD.
    Inventors: Katsushi Hamakubo, Kazuyuki Sohma, Kazuya Tokuda, Tatsuya Konishi
  • Patent number: 11949575
    Abstract: An in-vehicle communication device on a transmitting side of a message includes: a delay time measuring unit measuring a delay time from when transmission of a message is first attempted to when the transmission of the message is started; and an assigning unit assigning the delay time measured by the delay time measuring unit to the message. An in-vehicle communication device on a receiving side of a message includes: a reception point acquisition unit acquiring a point in time when a message from the in-vehicle communication device on the transmitting side is received; a delay time acquisition unit acquiring a delay time assigned to the received message; and a calculation unit calculating a transmission cycle of each message based on a point in time acquired by the reception point acquisition unit and a delay time acquired by the delay time acquisition unit for each of two received messages.
    Type: Grant
    Filed: June 3, 2020
    Date of Patent: April 2, 2024
    Assignees: National University Corporation Tokai National Higher Education and Research System, Sumitomo Wiring Systems, Ltd., AutoNetworks Technologies, Ltd., Sumitomo Electric Industries, Ltd.
    Inventors: Ryo Kurachi, Hiroaki Takada, Hiroshi Ueda
  • Patent number: 11950365
    Abstract: A flexible printed circuit board includes: a base film having a hole for forming a through hole; and a coil-shaped wiring layer layered on at least one surface side of the base film, wherein the wiring layer includes a land portion arranged at an inner peripheral surface of the hole and at a peripheral portion of the hole of the base film, and a winding portion arranged in a spiral shape with the land portion as an inside end portion or an outside end portion, wherein the winding portion includes a first winding portion that is an outermost circumference and a second winding portion that is inside relative to the outermost circumference, and wherein a ratio of an average thickness of the land portion to an average thickness of the second winding portion is 1.1 or more and 5 or less.
    Type: Grant
    Filed: December 16, 2020
    Date of Patent: April 2, 2024
    Assignees: SUMITOMO ELECTRIC INDUSTRIES, LTD., SUMITOMO ELECTRIC PRINTED CIRCUITS, INC.
    Inventors: Shoichiro Sakai, Koji Nitta, Yoshio Oka, Junichi Motomura, Masanao Yamashita
  • Publication number: 20240101474
    Abstract: A resin composition for primary coating of an optical fiber contains a photopolymerizable compound containing a urethane (meth)acrylate containing a reaction product of a polypropylene polyol having a number average molecular weight of 8000 or more and 20000 or less and an isocyanate group-containing (meth)acrylate and a photopolymerization initiator.
    Type: Application
    Filed: December 21, 2021
    Publication date: March 28, 2024
    Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.
    Inventor: Yuya HOMMA
  • Publication number: 20240100606
    Abstract: A cutting tool is a cutting tool comprising a substrate and a coating film disposed on the substrate, in which the coating film includes a first layer, the first layer is composed of an alternate layer where a first unit layer and a second unit layer are alternately stacked, the first unit layer is composed of Ti1-a-bAlaCebN, a is 0.350 or more and 0.650 or less, b is 0.001 or more and 0.100 or less, the second unit layer is composed of AlcV1-cN, c is 0.40 or more and 0.75 or less, and a and c satisfy a relationship of c>a.
    Type: Application
    Filed: September 22, 2022
    Publication date: March 28, 2024
    Applicant: Sumitomo Electric Industries, Ltd.
    Inventors: Haruyo FUKUI, Nozomi TSUKIHARA, Anongsack PASEUTH, Toshihiro TABATA
  • Publication number: 20240102173
    Abstract: A cutting tool is a cutting tool comprising a substrate and a coating film disposed on the substrate, in which the coating film includes a first layer, the first layer is composed of an alternate layer where a first unit layer and a second unit layer are alternately stacked, the first unit layer is composed of Ti1-a-bAlaCebN, a is 0.350 or more and 0.650 or less, b is 0.001 or more and 0.100 or less, the second unit layer is composed of AlcCr1-cN, c is 0.40 or more and 0.75 or less, and a and c satisfy a relationship of c>a.
    Type: Application
    Filed: September 22, 2022
    Publication date: March 28, 2024
    Applicant: Sumitomo Electric Industries, Ltd.
    Inventors: Haruyo FUKUI, Nozomi TSUKIHARA, Anongsack PASEUTH, Toshihiro TABATA
  • Publication number: 20240100603
    Abstract: A cutting tool is a cutting tool comprising a substrate and a coating film disposed on the substrate, in which the coating film includes a first layer, the first layer is composed of an alternate layer where a first unit layer and a second unit layer are alternately stacked, the first unit layer is composed of Ti1-a-bAlaCebN, a is between greater than or equal to 0.350 and equal to or less than 0.650, b is between greater than or equal to 0.001 and equal to or less than 0.100, the second unit layer is composed of TicSi1-cN, and c is between greater than or equal to 0.20 and equal to or less than 0.99.
    Type: Application
    Filed: September 22, 2022
    Publication date: March 28, 2024
    Applicant: Sumitomo Electric Industries, Ltd.
    Inventors: Haruyo FUKUI, Nozomi TSUKIHARA, Anongsack PASEUTH, Toshihiro TABATA
  • Publication number: 20240106221
    Abstract: The heat shrinkable tube according to the present disclosure contains an ethylene-tetrafluoroethylene copolymer as a main component. The heat shrinkable tube has a melting point of 210° C. to 250° C. and a storage elastic modulus of 0.8 MPa to 2.8 MPa at 250° C. to 280° C.
    Type: Application
    Filed: January 21, 2022
    Publication date: March 28, 2024
    Applicants: SUMITOMO ELECTRIC FINE POLYMER, INC., SUMITOMO ELECTRIC INDUSTRIES, LTD.
    Inventors: Keiji ISHIBASHI, Seiichirou MURATA, Ryota FUKUMOTO
  • Publication number: 20240103157
    Abstract: A method for installing a radio wave sensor configured to radiate a radio wave to a range including a target area that is set for detection of an object. The method includes: a step of installing a reference object; and a step of adjusting a radio wave radiation direction of the radio wave sensor, using the reference object as a reference. The reference object is installed at a first position outside the target area.
    Type: Application
    Filed: September 7, 2020
    Publication date: March 28, 2024
    Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.
    Inventors: Nobuo HIGASHIDA, Shohei OGAWA
  • Patent number: 11939219
    Abstract: The carbon nanotube assembled wire includes a plurality of carbon nanotubes oriented at a degree of orientation of 0.9 or more and 1 or less.
    Type: Grant
    Filed: December 26, 2019
    Date of Patent: March 26, 2024
    Assignees: SUMITOMO ELECTRIC INDUSTRIES, LTD., UNIVERSITY OF TSUKUBA
    Inventors: Toshihiko Fujimori, Takeshi Hikata, Soichiro Okubo, Jun-ichi Fujita
  • Patent number: 11942517
    Abstract: A silicon carbide semiconductor device has a silicon carbide substrate, a first insulator, a first electrode, and a second electrode. The silicon carbide substrate includes a first impurity region, a second impurity region, a third impurity region, a first superjunction portion, a fourth impurity region, a fifth impurity region, a sixth impurity region, and a second superjunction portion. The first superjunction portion has a first region and a second region. The second superjunction portion has a third region and a fourth region. In a direction perpendicular to a second main surface, a bottom surface of a first trench is located between a second end surface and the second main surface and is located between a fourth end surface and the second main surface.
    Type: Grant
    Filed: May 13, 2020
    Date of Patent: March 26, 2024
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventor: Takeyoshi Masuda