Abstract: A binding structure for a band for a wire harness prevents displacement of a band fastening position. A band (10) has a belt-shaped band section (12) by which electrical wires (80) are bound. The band section (12) includes a winding portion (14) wound around an outer periphery of the electrical wires (80) bundled together in a manner that the winding portion (14) is shifted away from a binding start point in a forward direction along a lengthwise direction of the electrical wires, and a winding portion (15) intersecting with the winding portion (14) in the forward direction and wound around the outer periphery in a manner that the winding portion (15) is shifted toward the binding start point in a return direction opposite to the forward direction.

Abstract: A silicon carbide crystal ingot having a surface greater than or equal to 4 inches, having an n-type dopant concentration greater than or equal to 1×1015 atoms/cm3 and less than or equal to 1×1020 atoms/cm3, a metal atom concentration greater than or equal to 1×1014 atoms/cm3 and less than or equal to 1×1018 atoms/cm3, and not exceeding the n-type dopant concentration, and a metal atom concentration gradient less than or equal to 1×1017 atoms/(cm3·mm), a silicon carbide single crystal wafer produced using the ingot, and a method for fabricating the silicon carbide crystal ingot.

Abstract: To provide a press-fit terminal with excellent connection reliability of which a plating surface is not scraped off when press-fitted into a through hole of a circuit board. Manufacture of the press-fit terminal for inserting into the conductive through hole of the circuit board includes the steps of forming an underplating layer including one or more plating layers on a surface of a terminal base of a connecting part of the press-fit terminal which comes into electrical contact with the through hole, forming an Sn plating layer on the top plating layer, and after the step of forming the Sn plating layer, conducting a reflow process of performing heat treatment to form an alloy layer of Sn and an underplating metal of the top plating layer on the underplating layer as well as make unalloyed Sn mixed in an outside layer of the alloy layer.