Abstract: A plasma processing apparatus for processing an object to be processed using a plasma. The apparatus includes a processing chamber defining a processing cavity for containing an object to be processed and a process gas therein, a microwave radiating antenna having a microwave radiating surface for radiating a microwave in order to excite a plasma in the processing cavity, and a dielectric body provided so as to be opposed to the microwave radiating surface, in which the distance D between the microwave radiating surface and a surface of the dielectric body facing away from the microwave radiating surface, which is represented with the wavelength of the microwave being a distance unit, is determined to be in the range satisfying the inequality 0.7×n/4?D?1.3×n/4 (n being a natural number).
Abstract: A plasma processing apparatus in which consumption of expensive krypton and xenon gases is suppressed as much as possible while reducing damage on a workpiece during plasma processing. In plasma processing of a substrate using a rare gas, two or more kinds of different rare gases are employed, and an inexpensive argon gas is used as one rare gas and any one or both of krypton and xenon gases having a larger collision cross-sectional area against electron than that of the argon gas is used as the other gas. Consequently, consumption of expensive krypton and xenon gases is suppressed as much as possible and damage on a workpiece is reduced during plasma processing.
Abstract: The water hammerless opening device comprises an actuator operating type valve installed on the fluid passage, an electro-pneumatic conversion device to supply the 2-step actuator operating pressure Pa to the afore-mentioned actuator operating type valve, a vibration sensor removably fixed to the pipe passage on the upstream side of the actuator operating type valve, and a tuning box to which the vibration detecting signal Pr detected by the vibration sensor is inputted, through which the control signal Sc to control the step operating pressure Ps? of the afore-mentioned 2-step actuator operating pressure Pa is outputted to the electro-pneumatic conversion device, and with which the 2-step actuator operating pressure Pa, of the step operating pressure Ps? which makes the vibration detecting signal Pr nearly zero, is outputted from the electro-pneumatic conversion by adjusting the control signal Sc.
Abstract: By hydrogen-terminating a semiconductor surface using a solution containing HF2? ions and an oxidant, the hydrogen termination can be quickly carried out. In this case, the semiconductor surface is silicon having a (111) surface, a (110) surface, or a (551) surface.
Abstract: In a P-channel power MIS field effect transistor formed on a silicon surface having substantially a (110) plane, a gate insulation film is used which provides a gate-to-source breakdown voltage of 10 V or more, and planarizes the silicon surface, or contains Kr, Ar, or Xe.
Abstract: The present invention is made to solve a problem to improve adhesion between a fluorine-containing carbon film and a foundation film. In order to achieve this object, according to the present invention, a fluorine-containing carbon film forming method of forming a fluorine-containing carbon film on a to-be-processed substrate includes: a first process of carrying out plasma excitation of a rare gas, and carrying out a surface treatment of the to-be-processed substrate with the use of the thus-plasma-excited rare gas with a substrate processing apparatus; and a second process of forming the fluorine-containing carbon film on the to-be-processed substrate, wherein the substrate processing apparatus has a microwave antenna electrically connected to a microwave power source.
Abstract: A plasma processing apparatus and a processing apparatus having a widened process condition range allowing plasma generation are obtained by increasing microwave propagation efficiency. The plasma processing apparatus includes a processing chamber where plasma processing is performed, and microwave introducer for introducing microwaves into the processing chamber. The microwave introducer includes a dielectric member transmitting the microwaves. The dielectric member has a shape in cross section in a direction approximately perpendicular to a transmitting direction of the microwaves through the dielectric member that allows transmission of the microwaves of substantially a single mode. The dielectric member has a thickness T in the transmitting direction that satisfies a condition of (?×(2m+0.7)/4)?T?(?×(2m+1.3)/4), where ? is a wavelength of the microwaves of the single mode transmitted through the dielectric member and m is an arbitrary integer.
Abstract: Laser light in a pattern reflected by a two-dimensional array micromirror 106 that is controlled on the basis of mask data of a mask pattern data output device 107 forms an enlarged pattern 110. This enlarged pattern is projected in a reduced manner onto a mask substrate 109 through a reduction-projection optical system 102, thereby forming a lithography pattern 111. Since a large number of patterns are written in an instant by the two-dimensional array micromirror 106, a time required for lithography the entire mask pattern is extremely shortened as compared with a conventional one. As a result, the mask cost can be largely reduced.
January 28, 2004
Date of Patent:
January 6, 2009
Tadahiro Ohmi, Foundation For Advancement Of International Science
Abstract: The data analysis device 100 includes: difference calculation means (S2) for, with respect to an image, carrying out a calculation of calculating a difference between intensity values at an arbitrary point in the image and a point located in the vicinity of the arbitrary point in a first direction as a first intensity difference of the arbitrary point and of calculating a difference between intensity values at the arbitrary point and a point located in the vicinity of the arbitrary point in a second direction different from the first direction as a second intensity difference of the arbitrary point, the difference calculation means carrying out the calculation with respect to each of a plurality of points in the image; and frequency distribution generation means (S3 to S5) for quantizing a vector comprising the first intensity difference and the second intensity difference obtained by the difference calculation means for each of the plurality of points in the image into a single region of a plurality of regio
Abstract: A semiconductor device includes a Si crystal having a crystal surface in the vicinity of a (111) surface, and an insulation film formed on said crystal surface, at least a part of said insulation film comprising a Si oxide film containing Kr or a Si nitride film containing Ar or Kr.
Abstract: In a substrate processing apparatus, a control electrode (131) separates a process space (11C) including a substrate to be processed and a plasma formation space (11B) not including the substrate. The control electrode includes a conductive member formed in a processing vessel and having a plurality of apertures (131a) for passing plasma. A surface of the control electrode is covered by an aluminum oxide or a conductive nitride. In the substrate processing apparatus, a gas containing He and N2 is supplied into the processing vessel. In the plasma formation space, there is formed plasma under a condition in which atomic state nitrogen N* are excited. The atomic state nitrogen N* are used to nitride a surface of the substrate.
Abstract: The object of the present invention is to form a chromium-oxide film excellent in corrosion resistance without containing an oxide film of other metal onto the optional metallic material. The chromium-oxide passivation film excellent in corrosion resistance without containing the oxide film of other metal can be formed inexpensively and in a short time, and a fluid supplying system for supplying fluid hard in corrosivity in safety is able to be provided. This invention comprises a step of forming the passivation film consisting of a chromium oxide by giving heat treatment in an oxidizing atmosphere after coating chromium on metallic material of which surface roughness (Ra) of a coat surface is not more than 1.
Abstract: A safe, reduced pressure apparatus for generating water vapor from hydrogen and oxygen and feeding high purity moisture to processes such as semiconductor production. The apparatus eliminates the possibility of the gas igniting by maintaining the internal pressure of the catalytic reactor for generating moisture at a high level while supplying moisture gas from the reactor under reduced pressure. A heat dissipation reactor improvement substantially increases moisture generation without being an enlargement in size by efficient cooling of the reactor alumite-treated fins.
Abstract: There is provided an active matrix display device including a flattening layer formed so as to surround a source electrode wiring, a drain electrode wiring, and a signal line, so that the source electrode wiring, the drain electrode wiring, and the signal line form substantially the same surface with the flattening layer.
Abstract: A circuit board manufacturing method includes formation of a thermosetting photosensitive resin film on an insulating board by a spin coat method and the like, exposure of the photosensitive resin film to radiation rays such as ultraviolet rays, development with a developer or by etching, heat-hardening of the photosensitive resin film, oxygen plasma treatment or ultraviolet treatment if required, adjustment of a water quantity in the photosensitive resin film by drying the resin film, exposure in a fluorine gas atmosphere, anneal treatment, and then immersion of the resin film in a fluorinated acid chemical.
March 30, 2005
September 13, 2007
Tadahiro OHMI, Zeon Corporation
Tadahiro Ohmi, Keiichi Nii, Teruhiko Suzuki, Takeyoshi Kato
Abstract: The invention provides an automatic zero point correction device that includes a pressure sensor, wherein output from the sensor is outputted and the sensor output is inputted to a time-varying zero point drift correction means of the sensor; a sensor output judgement means of the time-varying zero point drift correction means, wherein the sensor output judgement means operates to make a judgement determining whether the sensor output is larger than a set value; and operating condition judgement means of the time-varying zero point drift correction means, wherein the operating condition judgement means judges operating conditions of the sensor, wherein the time-varying zero point drift correction means operates to cancel time-varying zero point drift of the sensor when the sensor output judgement means determines sensor output is larger than the set value and the operating condition judgement means determines operating conditions of the sensor are within previously set operating conditions.
Abstract: The present invention has an object of improving the cooling efficiency of the process gas supply part of a plasma processor and thereby suppressing an increase in the temperature of the process gas supply part.
Abstract: A semiconductor device comprising a substrate of SiC provided with an insulating film through plasma treatment. Rare gas is incorporated in the insulating film. Preferably, at least one of krypton (Kr), argon (Ar) and xenon (Xe) is used as the rare gas. A combination of oxygen gas and krypton (Kr) is especially preferred.
Abstract: In a microwave plasma processing apparatus that uses a radial line slot antenna, the efficiency of cooling of a shower plate is optimized and simultaneously the efficiency of microwave excitation is optimized, by causing a radiation surface of the radial line slot antenna to make an intimate contact with a cover plate that forms a part of an outer wall of the processing chamber and makes an intimate contact with the shower plate.
Abstract: A diaphragm valve 1 is provided with a body 2 having a flow-in passage 6, a flow-out passage 7, and a valve seat 8 formed between the passages; a diaphragm 3 installed in the body 2 and permitted to rest on and move away from the valve seat 8; and a driving means 4 installed on the body 2 to allow the diaphragm 3 to rest on and move away from the valve seat 8, wherein synthetic resin films 5 of predetermined thickness are coated on fluid-contacting parts 25 of the afore-mentioned body 2 and diaphragm 3. A diaphragm valve in accordance with the present invention prevents corrosion of the valve members caused by accumulation and adherence of substances produced by thermal decomposition, and prevents clogging caused by substances produced, and prevents seat leakage when applied in the vacuum exhaust system of a semiconductor manufacturing facility.