Patents Assigned to Tadahiro Ohmi
  • Patent number: 8513137
    Abstract: A plasma processing apparatus for processing an object to be processed using a plasma. The apparatus includes a processing chamber defining a processing cavity for containing an object to be processed and a process gas therein, a microwave radiating antenna having a microwave radiating surface for radiating a microwave in order to excite a plasma in the processing cavity, and a dielectric body provided so as to be opposed to the microwave radiating surface, in which the distance D between the microwave radiating surface and a surface of the dielectric body facing away from the microwave radiating surface, which is represented with the wavelength of the microwave being a distance unit, is determined to be in the range satisfying the inequality 0.7×n/4?D?1.3×n/4 (n being a natural number).
    Type: Grant
    Filed: September 14, 2012
    Date of Patent: August 20, 2013
    Assignees: Rohm Co., Ltd., Tadahiro Ohmi
    Inventors: Tadahiro Ohmi, Kazuhide Ino, Takahiro Arakawa
  • Patent number: 8198195
    Abstract: A plasma processing apparatus in which consumption of expensive krypton and xenon gases is suppressed as much as possible while reducing damage on a workpiece during plasma processing. In plasma processing of a substrate using a rare gas, two or more kinds of different rare gases are employed, and an inexpensive argon gas is used as one rare gas and any one or both of krypton and xenon gases having a larger collision cross-sectional area against electron than that of the argon gas is used as the other gas. Consequently, consumption of expensive krypton and xenon gases is suppressed as much as possible and damage on a workpiece is reduced during plasma processing.
    Type: Grant
    Filed: September 26, 2005
    Date of Patent: June 12, 2012
    Assignee: Tadahiro Ohmi
    Inventors: Tadahiro Ohmi, Akinobu Teramoto
  • Patent number: 8047225
    Abstract: The water hammerless opening device comprises an actuator operating type valve installed on the fluid passage, an electro-pneumatic conversion device to supply the 2-step actuator operating pressure Pa to the afore-mentioned actuator operating type valve, a vibration sensor removably fixed to the pipe passage on the upstream side of the actuator operating type valve, and a tuning box to which the vibration detecting signal Pr detected by the vibration sensor is inputted, through which the control signal Sc to control the step operating pressure Ps? of the afore-mentioned 2-step actuator operating pressure Pa is outputted to the electro-pneumatic conversion device, and with which the 2-step actuator operating pressure Pa, of the step operating pressure Ps? which makes the vibration detecting signal Pr nearly zero, is outputted from the electro-pneumatic conversion by adjusting the control signal Sc.
    Type: Grant
    Filed: April 10, 2009
    Date of Patent: November 1, 2011
    Assignees: Fujikin Incorporated, Tadahiro Ohmi
    Inventors: Tadahiro Ohmi, Kouji Nishino, Masaaki Nagase, Ryousuke Dohi, Nobukazu Ikeda, Ryutaro Nishimura
  • Patent number: 8030182
    Abstract: By hydrogen-terminating a semiconductor surface using a solution containing HF2? ions and an oxidant, the hydrogen termination can be quickly carried out. In this case, the semiconductor surface is silicon having a (111) surface, a (110) surface, or a (551) surface.
    Type: Grant
    Filed: September 20, 2005
    Date of Patent: October 4, 2011
    Assignee: Tadahiro OHMI
    Inventors: Tadahiro Ohmi, Akinobu Teramoto, Hiroshi Akahori
  • Publication number: 20100072519
    Abstract: In a P-channel power MIS field effect transistor formed on a silicon surface having substantially a (110) plane, a gate insulation film is used which provides a gate-to-source breakdown voltage of 10 V or more, and planarizes the silicon surface, or contains Kr, Ar, or Xe.
    Type: Application
    Filed: September 28, 2009
    Publication date: March 25, 2010
    Applicants: Yazaki Corporation, Tadahiro Ohmi
    Inventors: Tadahiro Ohmi, Akinobu Teramoto, Hiroshi Akahori, Keiichi Nii, Takanori Watanabe
  • Patent number: 7538012
    Abstract: The present invention is made to solve a problem to improve adhesion between a fluorine-containing carbon film and a foundation film. In order to achieve this object, according to the present invention, a fluorine-containing carbon film forming method of forming a fluorine-containing carbon film on a to-be-processed substrate includes: a first process of carrying out plasma excitation of a rare gas, and carrying out a surface treatment of the to-be-processed substrate with the use of the thus-plasma-excited rare gas with a substrate processing apparatus; and a second process of forming the fluorine-containing carbon film on the to-be-processed substrate, wherein the substrate processing apparatus has a microwave antenna electrically connected to a microwave power source.
    Type: Grant
    Filed: May 19, 2004
    Date of Patent: May 26, 2009
    Assignees: Tadahiro OHMI, Tokyo Electron Limited
    Inventors: Tadahiro Ohmi, Masaki Hirayama
  • Patent number: 7478609
    Abstract: A plasma processing apparatus and a processing apparatus having a widened process condition range allowing plasma generation are obtained by increasing microwave propagation efficiency. The plasma processing apparatus includes a processing chamber where plasma processing is performed, and microwave introducer for introducing microwaves into the processing chamber. The microwave introducer includes a dielectric member transmitting the microwaves. The dielectric member has a shape in cross section in a direction approximately perpendicular to a transmitting direction of the microwaves through the dielectric member that allows transmission of the microwaves of substantially a single mode. The dielectric member has a thickness T in the transmitting direction that satisfies a condition of (?×(2m+0.7)/4)?T?(?×(2m+1.3)/4), where ? is a wavelength of the microwaves of the single mode transmitted through the dielectric member and m is an arbitrary integer.
    Type: Grant
    Filed: October 11, 2002
    Date of Patent: January 20, 2009
    Assignees: Sharp Kabushiki Kaisha, Tadahiro OHMI
    Inventors: Naoko Yamamoto, I'atsushi Yamamoto, Masaki Hirayama, I'adahiro Ohmi
  • Patent number: 7474383
    Abstract: Laser light in a pattern reflected by a two-dimensional array micromirror 106 that is controlled on the basis of mask data of a mask pattern data output device 107 forms an enlarged pattern 110. This enlarged pattern is projected in a reduced manner onto a mask substrate 109 through a reduction-projection optical system 102, thereby forming a lithography pattern 111. Since a large number of patterns are written in an instant by the two-dimensional array micromirror 106, a time required for lithography the entire mask pattern is extremely shortened as compared with a conventional one. As a result, the mask cost can be largely reduced.
    Type: Grant
    Filed: January 28, 2004
    Date of Patent: January 6, 2009
    Assignees: Tadahiro Ohmi, Foundation For Advancement Of International Science
    Inventors: Tadahiro Ohmi, Shigetoshi Sugawa, Kiwamu Takehisa
  • Patent number: 7436999
    Abstract: The data analysis device 100 includes: difference calculation means (S2) for, with respect to an image, carrying out a calculation of calculating a difference between intensity values at an arbitrary point in the image and a point located in the vicinity of the arbitrary point in a first direction as a first intensity difference of the arbitrary point and of calculating a difference between intensity values at the arbitrary point and a point located in the vicinity of the arbitrary point in a second direction different from the first direction as a second intensity difference of the arbitrary point, the difference calculation means carrying out the calculation with respect to each of a plurality of points in the image; and frequency distribution generation means (S3 to S5) for quantizing a vector comprising the first intensity difference and the second intensity difference obtained by the difference calculation means for each of the plurality of points in the image into a single region of a plurality of regio
    Type: Grant
    Filed: March 2, 2004
    Date of Patent: October 14, 2008
    Assignee: Tadahiro OHMI
    Inventors: Tadahiro Ohmi, Koji Kotani, Feifei Lee
  • Publication number: 20080128758
    Abstract: A semiconductor device includes a Si crystal having a crystal surface in the vicinity of a (111) surface, and an insulation film formed on said crystal surface, at least a part of said insulation film comprising a Si oxide film containing Kr or a Si nitride film containing Ar or Kr.
    Type: Application
    Filed: October 11, 2007
    Publication date: June 5, 2008
    Applicants: Tadahiro Ohmi, TOKYO ELECTRON LIMITED
    Inventors: Tadahiro Ohmi, Shigetoshi Sugawa, Katsuyuki Sekine, Yuji Saito
  • Patent number: 7329609
    Abstract: In a substrate processing apparatus, a control electrode (131) separates a process space (11C) including a substrate to be processed and a plasma formation space (11B) not including the substrate. The control electrode includes a conductive member formed in a processing vessel and having a plurality of apertures (131a) for passing plasma. A surface of the control electrode is covered by an aluminum oxide or a conductive nitride. In the substrate processing apparatus, a gas containing He and N2 is supplied into the processing vessel. In the plasma formation space, there is formed plasma under a condition in which atomic state nitrogen N* are excited. The atomic state nitrogen N* are used to nitride a surface of the substrate.
    Type: Grant
    Filed: December 10, 2002
    Date of Patent: February 12, 2008
    Assignees: Tadahiro Ohmi, Tokyo Electron Limited
    Inventors: Tadahiro Ohmi, Shigetoshi Sugawa, Masaki Hirayama
  • Publication number: 20080003441
    Abstract: The object of the present invention is to form a chromium-oxide film excellent in corrosion resistance without containing an oxide film of other metal onto the optional metallic material. The chromium-oxide passivation film excellent in corrosion resistance without containing the oxide film of other metal can be formed inexpensively and in a short time, and a fluid supplying system for supplying fluid hard in corrosivity in safety is able to be provided. This invention comprises a step of forming the passivation film consisting of a chromium oxide by giving heat treatment in an oxidizing atmosphere after coating chromium on metallic material of which surface roughness (Ra) of a coat surface is not more than 1.
    Type: Application
    Filed: July 30, 2007
    Publication date: January 3, 2008
    Applicant: TADAHIRO OHMI
    Inventors: Tadahiro Ohmi, Yasuyuki Shirai, Nobukazu Ikeda, Eiji Ideta, Akihiro Morimoto, Tetsutaro Ogushi, Takehisa Konishi
  • Publication number: 20070231225
    Abstract: A safe, reduced pressure apparatus for generating water vapor from hydrogen and oxygen and feeding high purity moisture to processes such as semiconductor production. The apparatus eliminates the possibility of the gas igniting by maintaining the internal pressure of the catalytic reactor for generating moisture at a high level while supplying moisture gas from the reactor under reduced pressure. A heat dissipation reactor improvement substantially increases moisture generation without being an enlargement in size by efficient cooling of the reactor alumite-treated fins.
    Type: Application
    Filed: June 8, 2007
    Publication date: October 4, 2007
    Applicants: FUJIKIN INCORPORATED, Tadahiro OHMI
    Inventors: Tadahiro Ohmi, Nobukazu Ikeda, Yukio Minami, Kouji Kawada, Katunori Komehana, Teruo Honiden, Touru Hirai, Akihiro Morimoto, Toshirou Nariai, Keiji Hirao, Masaharu Taguchi, Osamu Nakamura
  • Publication number: 20070222933
    Abstract: There is provided an active matrix display device including a flattening layer formed so as to surround a source electrode wiring, a drain electrode wiring, and a signal line, so that the source electrode wiring, the drain electrode wiring, and the signal line form substantially the same surface with the flattening layer.
    Type: Application
    Filed: November 26, 2004
    Publication date: September 27, 2007
    Applicants: Tadahiro OHMI, Zeon Corporation
    Inventor: Tadahiro Ohmi
  • Publication number: 20070209200
    Abstract: A circuit board manufacturing method includes formation of a thermosetting photosensitive resin film on an insulating board by a spin coat method and the like, exposure of the photosensitive resin film to radiation rays such as ultraviolet rays, development with a developer or by etching, heat-hardening of the photosensitive resin film, oxygen plasma treatment or ultraviolet treatment if required, adjustment of a water quantity in the photosensitive resin film by drying the resin film, exposure in a fluorine gas atmosphere, anneal treatment, and then immersion of the resin film in a fluorinated acid chemical.
    Type: Application
    Filed: March 30, 2005
    Publication date: September 13, 2007
    Applicants: Tadahiro OHMI, Zeon Corporation
    Inventors: Tadahiro Ohmi, Keiichi Nii, Teruhiko Suzuki, Takeyoshi Kato
  • Publication number: 20070151321
    Abstract: The invention provides an automatic zero point correction device that includes a pressure sensor, wherein output from the sensor is outputted and the sensor output is inputted to a time-varying zero point drift correction means of the sensor; a sensor output judgement means of the time-varying zero point drift correction means, wherein the sensor output judgement means operates to make a judgement determining whether the sensor output is larger than a set value; and operating condition judgement means of the time-varying zero point drift correction means, wherein the operating condition judgement means judges operating conditions of the sensor, wherein the time-varying zero point drift correction means operates to cancel time-varying zero point drift of the sensor when the sensor output judgement means determines sensor output is larger than the set value and the operating condition judgement means determines operating conditions of the sensor are within previously set operating conditions.
    Type: Application
    Filed: June 10, 2004
    Publication date: July 5, 2007
    Applicants: FUJIKIN INCORPORATED, Tadahiro OHMI
    Inventors: Tadahiro Ohmi, Kazuhiko Sugiyama, Shoichi Hino, Eiji Takahashi, Makoto Saegusa, Nobukazu Ikeda, Kouji Nishino, Ryousuke Dohi, Toyomi Uenoyama, Katsuyuki Sugita
  • Publication number: 20070137575
    Abstract: The present invention has an object of improving the cooling efficiency of the process gas supply part of a plasma processor and thereby suppressing an increase in the temperature of the process gas supply part.
    Type: Application
    Filed: November 2, 2004
    Publication date: June 21, 2007
    Applicants: TOKYO ELECTRON LIMITED, Tadahiro OHMI
    Inventors: Tadahiro Ohmi, Toshihisa Nozawa, Osamu Morita, Tamaki Yuasa, Koji Kotani
  • Publication number: 20060214224
    Abstract: A semiconductor device comprising a substrate of SiC provided with an insulating film through plasma treatment. Rare gas is incorporated in the insulating film. Preferably, at least one of krypton (Kr), argon (Ar) and xenon (Xe) is used as the rare gas. A combination of oxygen gas and krypton (Kr) is especially preferred.
    Type: Application
    Filed: April 13, 2004
    Publication date: September 28, 2006
    Applicant: Tadahiro Ohmi
    Inventors: Tadahiro Ohmi, Akinobu Teramoto
  • Patent number: 7097735
    Abstract: In a microwave plasma processing apparatus that uses a radial line slot antenna, the efficiency of cooling of a shower plate is optimized and simultaneously the efficiency of microwave excitation is optimized, by causing a radiation surface of the radial line slot antenna to make an intimate contact with a cover plate that forms a part of an outer wall of the processing chamber and makes an intimate contact with the shower plate.
    Type: Grant
    Filed: March 28, 2002
    Date of Patent: August 29, 2006
    Assignees: Tadahiro Ohmi, Tokyo Electron Limited
    Inventors: Tadahiro Ohmi, Masaki Hirayama, Shigetoshi Sugawa, Tetsuya Goto
  • Publication number: 20060175573
    Abstract: A diaphragm valve 1 is provided with a body 2 having a flow-in passage 6, a flow-out passage 7, and a valve seat 8 formed between the passages; a diaphragm 3 installed in the body 2 and permitted to rest on and move away from the valve seat 8; and a driving means 4 installed on the body 2 to allow the diaphragm 3 to rest on and move away from the valve seat 8, wherein synthetic resin films 5 of predetermined thickness are coated on fluid-contacting parts 25 of the afore-mentioned body 2 and diaphragm 3. A diaphragm valve in accordance with the present invention prevents corrosion of the valve members caused by accumulation and adherence of substances produced by thermal decomposition, and prevents clogging caused by substances produced, and prevents seat leakage when applied in the vacuum exhaust system of a semiconductor manufacturing facility.
    Type: Application
    Filed: February 9, 2004
    Publication date: August 10, 2006
    Applicants: Tadahiro OHMI, Fujikin Inc.
    Inventors: Tadahiro Ohmi, Nobukazu Ikeda, Michio Yamajl, Masafumi Kitano, Akihiro Morimoto