Patents Assigned to Taiwan Semiconductor Manufacturing Company, Ltd.
  • Publication number: 20240086605
    Abstract: A method for providing an IC design is disclosed. The method includes receiving and synthesizing a behavioral description of an IC design; generating, based on the synthesized behavioral description, a layout for the IC design; performing at least a timing analysis on the layout; accessing, based on the timing analysis, a first cell library including a plurality of transistor-based cells, each having one or more transistors and associated with a respective first delay value; accessing, based on the timing analysis, a second cell library including a plurality of non-transistor-based cells, each having no transistor and associated with a respective second delay value; and updating the layout by at least one of inserting one or more of the plurality of transistor-based cells or inserting one or more of the plurality of non-transistor-based cells.
    Type: Application
    Filed: November 22, 2023
    Publication date: March 14, 2024
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Kenan Yu, Qingwen Deng
  • Publication number: 20240088294
    Abstract: In a method of manufacturing a semiconductor device, an upper fin structure in which first semiconductor layers and second semiconductor layers are alternately stacked is formed over a lower fin structure, a sacrificial gate structure is formed over the upper fin structure, a source/drain region of the upper fin structure, which is not covered by the sacrificial gate structure, is etched thereby forming a source/drain space, the first semiconductor layers are laterally etched through the source/drain space, an inner spacer made of a dielectric material is formed on an end of each of the etched first semiconductor layers, and a source/drain epitaxial layer is formed in the source/drain space to cover the inner spacer. In etching the source/drain region, a part of the lower fin structure is also etched to form a recess, in which a (111) surface is exposed.
    Type: Application
    Filed: November 21, 2023
    Publication date: March 14, 2024
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Shahaji B. MORE, Chun Hsiung TSAI
  • Publication number: 20240087890
    Abstract: A method includes depositing a photoresist layer over a target layer, the photoresist layer comprising an organometallic material; exposing the photoresist layer to an extreme ultraviolet (EUV) radiation; developing the exposed photoresist layer to form a photoresist pattern; forming a spacer on a sidewall of the photoresist pattern; removing the photoresist pattern; after removing the photoresist pattern, patterning the target layer through the spacer.
    Type: Application
    Filed: August 26, 2022
    Publication date: March 14, 2024
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Yu-Lien HUANG, Chih-Cheng LIU, Tze-Liang LEE
  • Publication number: 20240088085
    Abstract: A package structure includes a semiconductor die, a redistribution circuit structure, and conductive pads. The redistribution circuit structure is located on and electrically connected to the semiconductor die, the redistribution circuit structure includes a first contact pad having a first width and a second contact pad having a second width. The conductive pads are located on and electrically connected to the redistribution circuit structure through connecting to the first contact pad and the second contact pad, the redistribution circuit structure is located between the conductive pads and the semiconductor die. The first width of the first contact pad is less than a width of the conductive pads, and the second width of the second contact pad is substantially equal to or greater than the width of the conductive pads.
    Type: Application
    Filed: November 21, 2023
    Publication date: March 14, 2024
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Tsung-Shu Lin, Hsuan-Ning Shih
  • Publication number: 20240087961
    Abstract: The embodiments described herein are directed to a method for reducing fin oxidation during the formation of fin isolation regions. The method includes providing a semiconductor substrate with an n-doped region and a p-doped region formed on a top portion of the semiconductor substrate; epitaxially growing a first layer on the p-doped region; epitaxially growing a second layer different from the first layer on the n-doped region; epitaxially growing a third layer on top surfaces of the first and second layers, where the third layer is thinner than the first and second layers. The method further includes etching the first, second, and third layers to form fin structures on the semiconductor substrate and forming an isolation region between the fin structures.
    Type: Application
    Filed: November 21, 2023
    Publication date: March 14, 2024
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Hung-Ju CHOU, Chih-Chung Chang, Jun-Ming Kuo, Che-Yuan Hsu, Pei-Ling Kao, Chen-Hsuan Liao
  • Publication number: 20240087967
    Abstract: An integrated circuit component includes a semiconductor substrate, conductive pads, a passivation layer and conductive vias. The semiconductor substrate has an active surface. The conductive pads are located on the active surface of the semiconductor substrate and electrically connected to the semiconductor substrate, and the conductive pads each have a contact region and a testing region, where in each of the conductive pads, an edge of the contact region is in contact with an edge of the testing region. The passivation layer is located on the semiconductor substrate, where the conductive pads are located between the semiconductor substrate and the passivation layer, and the testing regions and the contact regions of the conductive pads are exposed by the passivation layer. The conductive vias are respectively located on the contact regions of the conductive pads.
    Type: Application
    Filed: November 20, 2023
    Publication date: March 14, 2024
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Tzuan-Horng Liu, Chao-Hsiang Yang, Hsien-Wei Chen, Ming-Fa Chen
  • Publication number: 20240086708
    Abstract: One aspect of this description relates to a convolutional neural network (CNN). The CNN includes a memory cell array including a plurality of memory cells. Each memory cell includes at least one first capacitive element of a plurality of first capacitive elements. Each memory cell is configured to multiply a weight bit and an input bit to generate a product. The at least one first capacitive element is enabled when the product satisfies a predetermined threshold. The CNN includes a reference cell array including a plurality of second capacitive elements. The CNN includes a memory controller configured to compare a first signal associated with the plurality of first capacitive elements with a second signal associated with at least one second capacitive element of the plurality of second capacitive elements, and, based on the comparison, determine whether the at least one first capacitive element is enabled.
    Type: Application
    Filed: November 22, 2023
    Publication date: March 14, 2024
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Jaw-Juinn Horng, Szu-Chun Tsao
  • Publication number: 20240088139
    Abstract: The present disclosure describes a method for forming polysilicon resistors with high-k dielectrics and polysilicon gate electrodes. The method includes depositing a resistor stack on a substrate having spaced apart first and second isolation regions. Further the method includes patterning the resistor stack to form a polysilicon resistor structure on the first isolation region and a gate structure between the first and second isolation regions, and doping the polysilicon resistor structure to form a doped layer in the polysilicon layer of the polysilicon resistor structure and source-drain regions in the substrate adjacent to the gate structure. Also, the method includes replacing the polysilicon layer in the gate structure with a metal gate electrode to form a transistor structure.
    Type: Application
    Filed: November 21, 2023
    Publication date: March 14, 2024
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY , LTD.
    Inventors: Meng-Han LIN, Wen-Tuo Huang, Yong-Shiuan Tsair
  • Publication number: 20240087623
    Abstract: A memory device includes memory cells operably connected to column signal lines and to word signal lines. The column signal lines associated with one or more memory cells to be accessed (e.g., read) are precharged to a first voltage level. The column signal lines not associated with the one or more memory cells to be accessed are precharged to a second voltage level, where the second voltage level is less than the first voltage level.
    Type: Application
    Filed: July 31, 2023
    Publication date: March 14, 2024
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventor: Ed McCombs
  • Publication number: 20240088156
    Abstract: A semiconductor device includes at least one fin, a first dielectric layer and a second dielectric layer. The first dielectric layer is disposed on the at least one fin. The second dielectric layer between the at least one fin and the first dielectric layer. A thickness of the first dielectric layer on a sidewall of the at least one fin is less than a thickness of the second dielectric layer on the sidewall of the at least one fin.
    Type: Application
    Filed: November 23, 2023
    Publication date: March 14, 2024
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Cheng-I Lin, Chun-Heng Chen, Ming-Ho Lin, Chi-On Chui
  • Publication number: 20240087618
    Abstract: Disclosed herein are related to reducing power consumption of a memory device when transitioning from a sleep state to an operational state. In one aspect, the memory device includes a memory cell to store data. In one aspect, the memory device includes an output driver configured to: generate an output signal indicating the stored data, in response to a sleep tracking signal indicating that the memory cell is in the operational state, and generate the output signal having a predetermined voltage irrespective of the stored data, in response to the sleep tracking signal indicating that the memory cell is in the sleep state. In one aspect, the sleep tracking signal is delayed from a sleep control signal causing the memory cell to operate in the sleep state or the operational state.
    Type: Application
    Filed: November 22, 2023
    Publication date: March 14, 2024
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Sanjeev Kumar Jain, Atul Katoch
  • Publication number: 20240087964
    Abstract: An apparatus for detecting an endpoint of a grinding process includes a connecting device, a timer and a controller. The connecting device is connected to a sensor that periodically senses an interface of a reconstructed wafer comprising a plurality of dies of at least two types to generate a thickness signal comprising thicknesses from a surface of an insulating layer of the reconstructed wafer to the interface of the reconstructed wafer. The timer is configured to generate a clock signal having a plurality of pulses with a time interval. The controller is coupled to the sensor and the timer, and configured to filter the thickness signal according to the clock signal to output a thickness extremum among the thicknesses in the thickness signal within each time interval, wherein the thickness signal after the filtering is used to determine the endpoint of the grinding process being performed on the reconstructed wafer.
    Type: Application
    Filed: November 16, 2023
    Publication date: March 14, 2024
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yi-Chao Mao, Chin-Chuan Chang, Szu-Wei Lu
  • Publication number: 20240087786
    Abstract: Memory stacks, memory devices and method of forming the same are provided. A memory stack includes a spin-orbit torque layer, a magnetic bias layer and a free layer. The magnetic bias layer is in physical contact with the spin-orbit torque layer and has a first magnetic anisotropy. The free layer is disposed adjacent to the spin-orbit torque layer and has a second magnetic anisotropy perpendicular to the first magnetic anisotropy.
    Type: Application
    Filed: November 27, 2023
    Publication date: March 14, 2024
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Shy-Jay Lin, Wilman Tsai, Ming-Yuan Song
  • Publication number: 20240088297
    Abstract: In a method of manufacturing a semiconductor device including a Fin FET, a fin structure extending in a first direction is formed over a substrate. An isolation insulating layer is formed over the substrate so that an upper portion of the fin structure is exposed from the isolation insulating layer. A gate structure extending in a second direction crossing the first direction is formed over a part of the fin structure. A fin mask layer is formed on sidewalls of a source/drain region of the fin structure. The source/drain region of the fin structure is recessed. An epitaxial source/drain structure is formed over the recessed fin structure. In the recessing the source/drain region of the fin structure, a plasma process combining etching and deposition processes is used to form a recess having a rounded corner shape in a cross section along the second direction.
    Type: Application
    Filed: November 22, 2023
    Publication date: March 14, 2024
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Cheng-Yen YU, Po-Chi WU, Yueh-Chun LAI
  • Publication number: 20240087641
    Abstract: A memory device includes a memory bank with a memory cell connected to a local bit line and a word line. A first local data latch is connected to the local bit line and has an enable terminal configured to receive a first local clock signal. A word line latch is configured to latch a word line select signal, and has an enable terminal configured to receive a second local clock signal. A first global data latch is connected to the first local data latch by a global bit line, and the first global data latch has an enable terminal configured to receive a global clock signal. A global address latch is connected to the word line latch and has an enable terminal configured to receive the global clock signal. A bank select latch is configured to latch a bank select signal, and has an enable terminal configured to receive the second local clock signal.
    Type: Application
    Filed: November 21, 2023
    Publication date: March 14, 2024
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Atul Katoch, Sahil Preet Singh
  • Publication number: 20240087986
    Abstract: A semiconductor device including a substrate, a semiconductor package, a thermal conductive bonding layer, and a lid is provided. The semiconductor package is disposed on the substrate. The thermal conductive bonding layer is disposed on the semiconductor package. The lid is attached to the thermal conductive bonding layer and covers the semiconductor package to prevent coolant from contacting the semiconductor package.
    Type: Application
    Filed: November 15, 2023
    Publication date: March 14, 2024
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chen-Hua Yu, Chun-Hui Yu, Jeng-Nan Hung, Kuo-Chung Yee, Po-Fan Lin
  • Publication number: 20240088307
    Abstract: A semiconductor package is provided. The semiconductor package includes a heat dissipation substrate including a first conductive through-via embedded therein; a sensor die disposed on the heat dissipation substrate; an insulating encapsulant laterally encapsulating the sensor die; a second conductive through-via penetrating through the insulating encapsulant; and a first redistribution structure and a second redistribution structure disposed on opposite sides of the heat dissipation substrate. The second conductive through-via is in contact with the first conductive through-via. The sensor die is located between the second redistribution structure and the heat dissipation substrate. The second redistribution structure has a window allowing a sensing region of the sensor die receiving light. The first redistribution structure is electrically connected to the sensor die through the first conductive through-via, the second conductive through-via and the second redistribution structure.
    Type: Application
    Filed: November 20, 2023
    Publication date: March 14, 2024
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chih-Hsuan Tai, Hao-Yi Tsai, Yu-Chih Huang, Chih-Hao Chang, Chia-Hung Liu, Ban-Li Wu, Ying-Cheng Tseng, Po-Chun Lin
  • Publication number: 20240090354
    Abstract: Provided are a memory cell and a method of forming the same. The memory cell includes a bottom electrode, a top electrode, and a storage element layer. The storage element layer is disposed between the bottom and top electrodes. An extending direction of a sidewall of the storage element layer is different from an extending direction of a sidewall of the top electrode. A semiconductor device having the memory cell is also provided.
    Type: Application
    Filed: November 20, 2023
    Publication date: March 14, 2024
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yu-Chao Lin, Tung-Ying Lee
  • Publication number: 20240087668
    Abstract: A method of identifying cell-internal defects: obtaining a circuit design of an integrated circuit, the circuit design including netlists of one or more cells coupled to one another; identifying the netlist corresponding to one of the one or more cells; injecting a defect to one of a plurality of circuit elements and one or more interconnects of the cell; retrieving a first current waveform at a location of the cell where the defect is injected by applying excitations to inputs of the cell; retrieving, without the defect injected, a second current waveform at the location of the cell by applying the same excitations to the inputs of the cell; and selectively annotating, based on the first current waveform and the second current waveform, an input/output table of the cell with the defect.
    Type: Application
    Filed: November 17, 2023
    Publication date: March 14, 2024
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Ankita Patidar, Sandeep Kumar Goel
  • Publication number: 20240087980
    Abstract: A semiconductor device includes a substrate, a dielectric layer disposed over the substrate, and an interconnect structure extending through the dielectric layer. The dielectric layer includes a low-k dielectric material which includes silicon carbonitride having a carbon content ranging from about 30 atomic % to about 45 atomic %. The semiconductor device further includes a thermal dissipation feature extending through the dielectric layer and disposed to be spaced apart from the interconnect structure.
    Type: Application
    Filed: February 17, 2023
    Publication date: March 14, 2024
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Kai-Fang CHENG, Cherng-Shiaw TSAI, Cheng-Chin LEE, Yen-Ju WU, Yen-Pin HSU, Li-Ling SU, Ming-Hsien LIN, Hsiao-Kang CHANG