Patents Assigned to Tamura Corporation
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Patent number: 10926360Abstract: According to one aspect of the present invention, a lead-free solder alloy includes 2% by mass or more and 3.1% by mass or less of Ag, more than 0% by mass and 1% by mass or less of Cu, 1% by mass or more and 5% by mass or less of Sb, 3.1% by mass or more and 4.5% by mass or less of Bi, 0.01% by mass or more and 0.25% by mass or less of Ni, and Sn.Type: GrantFiled: September 19, 2017Date of Patent: February 23, 2021Assignee: TAMURA CORPORATIONInventors: Masaya Arai, Takeshi Nakano, Atsushi Hori, Tsukasa Katsuyama, Yurika Munekawa, Daisuke Maruyama
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Patent number: 10913132Abstract: A solder composition contains: flux composition containing (A) rosin-based resin, (B) activator, and (C) solvent; and (D): solder powder with a melting point of 200 to 250 degrees C. The component (A) contains (A1) rosin-based resin with a softening point of 120 degrees C. or more and an acid number of 220 mgKOH/g or more and (A2) rosin-based resin with a softening point of 100 degrees C. or less and an acid number of 20 mgKOH/g or less. The component (C) contains (C1) hexanediol solvent with a melting point of 40 degrees C. or more and a boiling point of 220 degrees C. or less and (C2) solvent with a viscosity of 10 mPa·s or less at 20 degrees C. and a boiling point of 270 degrees C. or more. A content of the component (A1) ranges from 15 to 25 mass % with respect to the flux composition (100 mass %).Type: GrantFiled: August 28, 2018Date of Patent: February 9, 2021Assignee: TAMURA CORPORATIONInventors: Nobuhiro Yamashita, Jun Aoki, Shinichi Usukura, Satoshi Okumura
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Patent number: 10906137Abstract: A solder composition of the invention contains solder powders and a flux composition. The flux composition contains (A) a resin and (B) an activator. The (B) component contains (B1) an organic acid, and (B2) a pyridine compound represented by a formula (1) below. A chlorine concentration is 900 mass ppm or less, a bromine concentration is 900 mass ppm or less, an iodine concentration is 900 mass ppm or less and a total halogen concentration is 1500 mass ppm or less in the solder composition. In the formula (1), X1, X2 and X3 are the same or different, each of X1, X2 and X3 representing a hydrogen atom, a hydroxyl group, a methyl group, an ethyl group or a propyl group, and all of X1, X2 and X3 are not simultaneously hydrogen atoms.Type: GrantFiled: June 28, 2018Date of Patent: February 2, 2021Assignee: TAMURA CORPORATIONInventors: Shoichi Nakaji, Daiki Amino, Hiro Einishi
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Publication number: 20210020789Abstract: A trench MOS Schottky diode includes a first semiconductor layer including a Ga2O3-based single crystal, a second semiconductor layer that is a layer stacked on the first semiconductor layer, includes a Ga2O3-based single crystal, and includes a trench opened on a surface thereof opposite to the first semiconductor layer, an anode electrode formed on the surface of the second semiconductor layer, a cathode electrode formed on a surface of the first semiconductor layer, an insulating film covering the inner surface of the trench of the second semiconductor layer, and a trench electrode that is buried in the trench of the second semiconductor layer so as to be covered with the insulating film and is in contact with the anode electrode. The second semiconductor layer includes an insulating dry-etching-damaged layer with a thickness of not more than 0.8 ?m in a region including the inner surface of the trench.Type: ApplicationFiled: February 25, 2019Publication date: January 21, 2021Applicants: TAMURA CORPORATION, Novel Crystal Technology, Inc., TDK CorporationInventors: Kohei SASAKI, Minoru FUJITA, Jun HIRABAYASHI, Jun ARIMA
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Publication number: 20210001433Abstract: A lead-free solder alloy includes 2.0% by mass or more and 4.0% by mass or less of Ag, 0.3% by mass or more and 0.7% by mass or less of Cu, 1.2% by mass or more and 2.0% by mass or less of Bi, 0.5% by mass or more and 2.1% by mass or less of In, 3.0% by mass or more and 4.0% by mass or less of Sb, 0.001% by mass or more and 0.05% by mass or less of Ni, 0.001% by mass or more and 0.01% by mass or less of Co, and the balance being Sn.Type: ApplicationFiled: September 16, 2020Publication date: January 7, 2021Applicant: TAMURA CORPORATIONInventors: Yurika MUNEKAWA, Takeshi NAKANO, Masaya ARAI, Takanori SHIMAZAKI, Tsukasa KATSUYAMA
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Patent number: 10861945Abstract: A semiconductor element includes a high-resistivity substrate that includes a ?-Ga2O3-based single crystal including an acceptor impurity, a buffer layer on the high-resistivity substrate, the buffer layer including a ?-Ga2O3-based single crystal, and a channel layer on the buffer layer, the channel layer including a ?-Ga2O3-based single crystal including a donor impurity. A crystalline laminate structure includes a high-resistivity substrate that includes a ?-Ga2O3-based single crystal including an acceptor impurity, a buffer layer on the high-resistivity substrate, the buffer layer including a ?-Ga2O3-based single crystal, and a donor impurity-containing layer on the buffer layer, the donor impurity-containing layer including a ?-Ga2O3-based single crystal including a donor impurity.Type: GrantFiled: August 18, 2015Date of Patent: December 8, 2020Assignees: TAMURA CORPORATION, NATIONAL INSTITUTE OF INFORMATION AND COMMUNICATIONS TECHNOLOGY, NATIONAL UNIVERSITY CORPORATION TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGYInventors: Kohei Sasaki, Ken Goto, Masataka Higashiwaki, Man Hoi Wong, Akinori Koukitu, Yoshinao Kumagai, Hisashi Murakami
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Patent number: 10836000Abstract: A flux includes a rosin resin, an activator, a thixotropic agent, and a solvent. The solvent includes 30% by mass or more and 60% by mass or less monovalent alcohol with respect to a total mass amount of the flux. The monovalent alcohol has 18 or more and 24 or less of carbon atoms in one molecule.Type: GrantFiled: September 20, 2018Date of Patent: November 17, 2020Assignee: TAMURA CORPORATIONInventors: Masanori Shibasaki, Jun Sugimoto, Isao Sakamoto
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Patent number: 10825935Abstract: A trench MOS-type Schottky diode includes a first semiconductor layer including a Ga2O3-based single crystal, a second semiconductor layer that is a layer laminated on the first semiconductor layer and that includes a Ga2O3-based single crystal and a trench opened on a surface thereof opposite to the first semiconductor layer, an anode electrode formed on the surface of the second semiconductor layer opposite to the first semiconductor layer, a cathode electrode formed on a surface of the first semiconductor layer opposite to the second semiconductor layer, an insulating film covering the inner surface of the trench of the second semiconductor layer, and a trench MOS gate that is embedded in the trench of the second semiconductor layer so as to be covered with the insulating film and is in contact with the anode electrode.Type: GrantFiled: April 20, 2017Date of Patent: November 3, 2020Assignees: TAMURA CORPORATION, National Institute of Information and Communications TechnologyInventors: Kohei Sasaki, Masataka Higashiwaki
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Publication number: 20200296845Abstract: A gate driver includes: driver boards mountable on an IGBT module which is a driving-target external device; gate driver circuits which are formed on the driver boards and each apply a drive signal generated using power and a signal which are externally input through an input connector, to semiconductor elements of the IGBT module; and an insulating surrounding member disposed to surround a peripheral edge of the input-side driver board.Type: ApplicationFiled: March 12, 2020Publication date: September 17, 2020Applicant: TAMURA CORPORATIONInventors: Hirotoshi AOKI, Kiyotaka YOSHIDA, Tomohiko YOSHINO
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Publication number: 20200243332Abstract: A semiconductor substrate that is used as an underlying substrate for epitaxial crystal growth carried out by the HVPE method includes a ?-Ga2O3-based single crystal, and a principal plane that is a plane parallel to a [100] axis of the ?-Ga2O3-based single crystal. An epitaxial wafer includes the semiconductor substrate, and an epitaxial layer including a ?-Ga2O3-based single crystal and formed on the principal plane of the semiconductor substrate by epitaxial crystal growth using the HVPE method. A method for producing an epitaxial wafer includes by using the HVPE method, epitaxially growing an epitaxial layer including a ?-Ga2O3-based single crystal on a semiconductor substrate that includes a ?-Ga2O3-based single crystal and has a principal plane parallel to a [100] axis of the ?-Ga2O3-based single crystal.Type: ApplicationFiled: November 16, 2016Publication date: July 30, 2020Applicants: TAMURA CORPORATION, National University Corporation Tokyo University of Agriculture and TechnologyInventors: Ken GOTO, Yoshinao KUMAGAI, Hisashi MURAKAMI
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Publication number: 20200235234Abstract: A field-effect transistor includes an n-type semiconductor layer that includes a Ga2O3-based single crystal and a plurality of trenches opening on one surface, a gate electrode buried in each of the plurality of trenches, a source electrode connected to a mesa-shaped region between adjacent trenches in the n-type semiconductor layer, and a drain electrode directly or indirectly connected to the n-type semiconductor layer on an opposite side to the source electrode.Type: ApplicationFiled: September 26, 2018Publication date: July 23, 2020Applicants: TAMURA CORPORATION, Novel Crystal Technology, Inc.Inventor: Kohei SASAKI
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Publication number: 20200200347Abstract: A light emitting device includes a laser diode that emits a blue light, and a wavelength conversion part that absorbs a part of light emitted from the laser diode and converts a wavelength thereof. The wavelength conversion part includes a YAG-based single crystal phosphor. Irradiance of light emitted from the laser diode and irradiated on the wavelength conversion part is not less than 80 W/mm2.Type: ApplicationFiled: December 27, 2016Publication date: June 25, 2020Applicants: TAMURA CORPORATION, KOHA CO., LTD.Inventors: Mikihiko UWANI, Akira ITO, Hiroyuki SAWANO, Kentaro TONE, Hiroaki SANO, Daisuke INOMATA, Kazuyuki IIZUKA
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Patent number: 10676841Abstract: A semiconductor substrate for being used as a base substrate for epitaxial crystal growth by HVPE method includes a ?-Ga2O3-based single crystal, and a principal surface that is a plane parallel to a [010] axis of the ?-Ga2O3-based single crystal. An epitaxial wafer includes the semiconductor substrate, and an epitaxial layer that includes a ?-Ga2O3-based single crystal and is formed on the principal surface of the semiconductor substrate by epitaxial crystal growth using the HVPE method. A method for manufacturing the epitaxial wafer includes forming the epitaxial layer by epitaxial crystal growth using the HVPE method on the semiconductor substrate.Type: GrantFiled: May 11, 2015Date of Patent: June 9, 2020Assignees: TAMURA CORPORATION, NATIONAL UNIVERSITY CORPORATION TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGYInventors: Ken Goto, Akinori Koukitu, Yoshinao Kumagai, Hisashi Murakami
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Publication number: 20200168711Abstract: A diode includes an n-type semiconductor layer including an n-type Ga2O3-based single crystal, and a p-type semiconductor layer including a p-type semiconductor in which a volume of an amorphous portion is higher than a volume of a crystalline portion. The n-type semiconductor layer and the p-type semiconductor layer form a pn junction.Type: ApplicationFiled: July 23, 2018Publication date: May 28, 2020Applicants: TAMURA CORPORATION, Novel Crystal Technology, Inc.Inventor: Kohei SASAKI
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Publication number: 20200168460Abstract: A semiconductor substrate includes a single crystal Ga2O3-based substrate and a polycrystalline substrate that are bonded to each other. A thickness of the single crystal Ga2O3-based substrate is smaller than a thickness of the polycrystalline substrate, and a fracture toughness value of the polycrystalline substrate is higher than a fracture toughness value of the single crystal Ga2O3-based substrate.Type: ApplicationFiled: July 9, 2018Publication date: May 28, 2020Applicants: TAMURA CORPORATION, SICOXS Corporation, National Institute of Information and Communications TechnologyInventors: Akito KURAMATA, Shinya WATANABE, Kohei SASAKI, Kuniaki YAGI, Naoki HATTA, Masataka HIGASHIWAKI, Keita KONISHI
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Publication number: 20200144377Abstract: A Ga2O3-based semiconductor device includes a Ga2O3-based crystal layer including a donor, and an N-doped region formed in at least a part of the Ga2O3-based crystal layer.Type: ApplicationFiled: April 26, 2018Publication date: May 7, 2020Applicants: NATIONAL INSTITUTE OF INFORMATION AND COMMUNICATIONS TECHNOLOGY, TAMURA CORPORATION, NOVEL CRYSTAL TECHNOLOGY, INC.Inventors: Masataka HIGASHIWAKI, Yoshiaki NAKATA, Takafumi KAMIMURA, Man Hoi WONG, Kohei SASAKI, Daiki WAKIMOTO
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Patent number: 10633761Abstract: Provided are a Ga2O3-based single crystal substrate including a Ga2O3-based single crystal which has a high resistance while preventing a lowering of crystal quality and a production method therefor. According to one embodiment of the present invention, the production method includes growing the Ga2O3-based single crystal while adding a Fe to a Ga2O3-based raw material, the Ga2O3-based single crystal (5) including the Fe at a concentration higher than that of a donor impurity mixed in the Ga2O3-based raw material, and cutting out the Ga2O3-based single crystal substrate from the Ga2O3-based single crystal (5).Type: GrantFiled: October 26, 2018Date of Patent: April 28, 2020Assignee: TAMURA CORPORATIONInventor: Kohei Sasaki
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Publication number: 20200101567Abstract: Molded solder includes first metal powder and second metal powder. The first metal powder has a first solidus temperature and a first liquidus temperature and includes an alloy containing metal elements. The second metal powder has a melting temperature or a second solidus temperature and a second liquidus temperature and includes single metal element or an alloy containing metal elements. The melting temperature and the second liquidus temperature are higher than the first liquidus temperature. The molded solder is so constructed that a mixture of the first metal powder and the second metal powder are press-molded. The molded solder is so constructed that a first solidus temperature of a solder becomes higher when the molded solder becomes the solder after the first metal powder has been melted by heating the molded solder at a temperature equal to or higher than the first liquidus temperature.Type: ApplicationFiled: September 19, 2019Publication date: April 2, 2020Applicant: TAMURA CORPORATIONInventors: Isao SAKAMOTO, Akira KITAMURA, Hiroaki TANIGUCHI
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Publication number: 20200102667Abstract: [Problem] To provide a crystal laminate structure having a ?-Ga2O3 based single crystal film in which a dopant is included throughout the crystal and the concentration of the dopant can be set across a broad range. [Solution] In one embodiment of the present invention, provided is a crystal laminate structure 1 which includes: a Ga2O3 based substrate 10; and a ?-Ga2O3 based single crystal film 12 formed by epitaxial crystal growth on a primary face 11 of the Ga2O3 based substrate 10 and including Cl and a dopant doped in parallel with the crystal growth at a concentration of 1×1013 to 5.0×1020 atoms/cm3.Type: ApplicationFiled: December 3, 2019Publication date: April 2, 2020Applicants: TAMURA CORPORATION, NATIONAL UNIVERSITY CORPORATION TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGYInventors: Ken GOTO, Akinori KOUKITU, Yoshinao KUMAGAI, Hisashi MURAKAMI
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Patent number: D904991Type: GrantFiled: September 11, 2019Date of Patent: December 15, 2020Assignee: TAMURA CORPORATIONInventors: Hirotoshi Aoki, Kiyotaka Yoshida, Tomohiko Yoshino