Abstract: The invention relates to a holographic optical component and its use for reading the writing/reading heads. This application requires a minimum size and low weight for the holographic optical components. This is achieved in accordance with the invention by arranging a laser element and a grating structure, which is integrated on a waveguide layer and acts as a holographic optical system, on a large-sized surface side of a flat carrier element such that a light beam of the laser element impinges directly on the grating structure and is so converted by the grating structure that it exits from the component.

Abstract: A safeguard device having a transmitter produces a high-fequency signal modulated with a code signal word and a receiver having an alarm device is controlled thereby. To protect the transmitter from unauthorized use and to achieve an expansion of its utility, a switching device is provided having a memory for storing a code word and an input unit for a password. The switching device includes a comparing device and code signal generator. The comparing device enables the transmitter when an input password matches with a stored code word. The code signal generator selectively produces either an alarm or a reset code signal word to modulate a high-frequency signal. When the transmitter is switched to the active transmitting state, the appropriately modulated high-frequency signal is emitted. At the receiver, the alarm device is either activated or switched off depending on the code signal word received.

Abstract: The invention relates to a housing for installation in motor vehicles to hold electronic components arranged on a PCB. In accordance with the invention, the housing comprises a trough-shaped housing section and a metal lid. In addition, several heat sinks are arranged on the PCB, with the PCB being firmly connected exclusively to these heat sinks. Here, the heat sinks are designed such that they are in direct contact with both the housing section and the metal lid.

Abstract: A circut arrangement for serial data transfer has a transmitting device with several bit-parallel input information units, a serial data transfer line and a receiving device via which the transferred data are correspondingly converted into bit-parallel output information units to drive control elements or logic circuits. The data to be transferred forms on the data transfer line a data word composed of a start pulse, several information units corresponding to the number of bit-parallel input information units forming a data block, and a defined data pause. By cascading several transmitting and receiving devices of the same kind, the number of bit-parallel, input and output information units can be altered, whereby the data word on the data transfer line is also altered by sequential joining of a corresponding number of data blocks, each having the same number of information units.

Abstract: The invention relates to an electronic control unit, in particular an ignition control unit, containing an electronic circuit in the form of a hybrid circuit arranged on a heat sink, and having a plastic housing element containing the plug terminal jack. There is an electrical connection between the ground connection of the hybrid circuit and a plug terminal. In accordance with the invention, the ground connection between the hybrid circuit and the plug terminal is connected to the heat sink by electrically conducting parts contained in the plastic housing element.

Abstract: In a method of forming an integrated circuit array having a capacitance formed by a pn-junction and separated from other components by a pn-junction, semiconductor areas are provided which connect that zone of the two semiconductor zones forming the pn-junction of the capacitance that extends deeper into the semiconductor element than the other of the two semiconductor zones forming the pn-junction of the capacitance electrically to that zone of the two semiconductor zones forming the separating pn-junction that faces away from the capacitance.

Abstract: The invention relates to a solar cell which consists of a doped semiconductor base body and metallic connection contacts on the front and rear sides. For interconnection with further solar cells to form solar modules in series or parallel connection, at least one of the connection contacts comprises a connector contact which is homogeneously integrated with it, protrudes from the semiconductor base body and is deformable.

Abstract: In digital circuit technology, bipolar transistors are advantageously used for switching thanks to their high mutual conductance. Since a transistor operated in the saturation state has a retarded switching behavior, saturation must be avoided for rapid switching processes.In Schottky diodes, saturation is avoided by connecting a Schottky diode parallel to the base-collector barrier layer.However, the manufacture of Schottky diodes in integrated circuit technology entails additional process steps.The circuit in accordance with the invention avoids these additional process steps by replacing the Schottky diode with a unidirectional semiconductor element composed of field-effect transistors.BICMOS technology processes permitting monolithic integration or bipolar and MOS transistors are particularly suitable for manufacture of the circuit.

Abstract: The invention relates to a measuring system having a measuring array comprising a transmission and reception section and an electronic evaluation unit. In accordance with the invention, the distance between a first point and a second point is determined by moving the measuring array between the two points using the Doppler effect, with an intermediate frequency being formed in the transmission and reception section from the transmission frequency of the signal emitted by the transmission section and from the reception frequency of the signal reflected off a fixed object and picked up in the reception section, and the number of periods of intermediate frequency generated during the measuring operation being counted in the electronic evaluation unit to derive the distance.

Abstract: A safeguard device is provided with a high frequency sensor which triggers an alarm device after receiving high frequency energy. To prevent the alarm device being rendered ineffective by high frequency shielding of the safeguard device, a metal sensor is provided in addition which activates the alarm device regardless of the presence of high frequency energy when it is attempted to shield the safeguard device.

Abstract: In an integrated circuit array having a capacitance formed by a pn-junction and separated from other components by a pn-junction, semiconductor areas are provided which connect that zone of the two semiconductor zones forming the pn-junction of the capacitance that extends deeper into the semiconductor element than the other of the two semiconductor zones forming the pn-junction of the capacitance electrically to that zone of the two semiconductor zones forming the separating pn-junction that faces away from the capacitance.

Abstract: In a circuit array for setting the operating point of a first transistor. A current-inverting circuit (current mirror circuit) has a pinch resistor connected in series with the base-emitter path of another transistor within the current inverting circuit. The current inverting circuit supplies the current-inverting base current of the first transistor.

Abstract: In an integrated circuit arrangement with a protective arrangement at least partially integrated into it and protecting the integrated circuit arrangement from high-energy electrical faults, the protective arrangement has an ohmic resistance in the form of one or more resistance areas that is designed so as to absorb a major proportion of the energy from electrical faults in the event of limit loads and distribute the heat generated within it by the energy absorption over a surface of the protective arrangement such that the protective arrangement affected by the heat energy of the ohmic resistance is not thermally overloaded. Furthermore, the protective arrangement has a voltage-limiting element or several voltage-limiting elements to limit the interference voltage.

Abstract: In a controllable amplifier circuit with an amplifier transistor a further transistor is provided that, when actuated under control conditions, deprives the amplifier transistor of at least a part of the input signal.

Abstract: A settable resistor has a resistance path array (4) to which is allocated a contact piece (9) which is guidable in the longitudinal direction (13) over the resistance path array and has an adjusting device for the position of the contact piece. In order not to restrict the free displacement travel of the contact piece with a simple construction independent of the setting of the adjusting device, so that a high resolution is achieved particularly for application in the hand switch of a power tool with speed control regardless of a set maximum value, the contact piece (9) is additionally adjustable transverse to the longitudinal direction (13of the resistance path array (4) by means of the adjusting device (11).

Abstract: The invention relates to a wide-area lamp and consists of a transparent mounting plate with conducting path structure on which a large number of luminescent semiconductor elements connected to the conducting path structure are mounted in a wide-area spread. Each semiconductor element is surrounded by a reflector, with these reflectors being arranged on the mounting plate and reflecting through the mounting plate the light emitted by the semiconductor elements.

Abstract: The invention relates to a semiconductor arrangement consisting of a semiconductor substrate and arranged thereon a conductive semiconductor layer on which at least two ohmic connection electrodes are arranged in spaced lateral relationship to each other. The invention resides in selecting the conductive layer so thin that a depletion layer formed in the semiconductor layer between the ohmic connection electrodes produces, in the semiconductor layer, a potential distribution which acts as a majority carrier barrier.

Abstract: The mean drift speed of charge carriers in a semiconductor element can be increased if this semiconductor element has narrow layers which are alternately n-doped and p-doped on their planes, with undoped semiconductor material between these layers. A structure of this type is however difficult to manufacture, since it requires both doping zones in layer thicknesses of 2 nm and undoped semiconductor material between these doped zones. The semiconductor element in accordance with the invention therefore has successive layer sequences comprising two highly-doped layers with opposing conductivity. A weakly doped intermediate layer is arranged between each pair of layer sequences. These structures in accordance with the invention can be manufactured with MBE, LPCVD and MDVPE methods. To increase the switching frequency of pin diodes this structure in accordance with the invention can be incorporated into the intrinsic zones of these diodes.

Abstract: A squaring circuit and an i.sup.2 t circuit utilizing the squaring circuit. The squaring circuit comprises a voltage-controlled oscillator and a frequency/current converter which are connected to one another, with the input voltage signal being supplied to the voltage-controlled oscillator and to the frequency/current converter on the one hand, and with the output voltage signal being tappable at an RC network connected to the output of the frequency/current converter on the other hand. The value of the output voltage is proportional to the square of the value of the input voltage. With this squaring circuit, it is possible to construct an i.sup.2 t protective circuit for protection of an electrical consumer from overload.

Abstract: In an input circuit for high-frequency amplifiers having four transistors of the same conductivity type, the emitters of the first and second transistors (T1, T2) are connected to a reference point (M). The base of the first transistor (T1) forms the input (A) of the circuit and the base of the second transistor (T2) is connected to the collector of the first transistor (T1). The collector of the first transistor (T1) is connected to the emitter of the third transistor (T3) and the collector of the second transistor (T2) to the emitter of the fourth transistor (T4). The bases of the third and fourth transistors (T3, T4) are connected to one another, and at least one of the collectors of the third or fourth transistors (T3, T4) is connected to a current supply (I3, I4).