Abstract: A test controller applies test stimulus signals to the input pads of plural die on a wafer in parallel. The test controller also applies encoded test response signals to the output pads of the plural die in parallel. The encoded test response signals are decoded on the die and compared to core test response signals produced from applying the test stimulus signals to core circuits on the die. The comparison produces pass/fail signals that are loaded in to scan cells of an IEEE 1149.1 scan path. The pass/fail signals then may be scanned out of the die to determine the results of the test.

Abstract: An improved method for optimizing layer registration during lithography in the fabrication of a semiconductor device is disclosed. In one example, the method comprises optimizing contact layer registration of an SRAM device having a plurality of transistors having active and gate region features extending generally along a channel length (X) direction and a channel width (Y) direction, respectively. The method comprises aligning a contact layer to a gate layer in the channel length direction (X), using gate layer overlay marks to control the alignment of the contact layer in the channel length direction (X) of the semiconductor device. The method further includes aligning the contact layer to an active layer in the channel width direction (Y), using active layer overlay marks to control the alignment of the contact layer in the channel width direction (Y) of the semiconductor device.

Abstract: An electronic system is configured for scan testing, with a clock distribution network going to a plurality of blocks of the system, and a test capture clock being generated locally at each block. Capture clock pulses are optionally generated at different times for different blocks, and are optionally suppressed for some blocks.

Abstract: A symbol modulation system applicable to a body area network is disclosed herein. The symbol modulation system includes a symbol mapper. The symbol mapper is configured to determine a time within a predetermined symbol transmission interval at which a transmission representative of the symbol will occur. The time is determined based on a value of a symbol and a value of a time-hopping sequence. The time is selected from a plurality of symbol value based time slots, and a plurality of time-hopping sequence sub-time-slots within each symbol value based time slot. The symbol mapper is configured to generate a single guard interval within the symbol transmission interval. The single guard interval is positioned to terminate the symbol transmission interval.

Abstract: Low noise, low dropout regulators are described. An example low noise, low dropout regulator includes a chopping error amplifier to receive an input signal and a feedback signal and to output a modified signal having an undesired portion of the input signal shifted to a higher frequency and a regulator to receive the modified signal and to generate an output signal by filtering the undesired portion of the input signal from the modified signal.

Abstract: An electronic circuit separates frequency-overlapped GLONASS and GPS overlapped in an approximately 4 MHz passband. The circuit uses a multiple-path analog-to-digital converter circuit (ADC). A sampling rate circuit is coupled to concurrently operate the analog-to-digital converter circuit at a sampling rate between about 60 Msps and about 80 Msps. A digital processing circuit includes storage defining complex de-rotation and low pass filtering. The digital processing circuit is fed by the analog-to-digital converter circuit and is operable A) to establish an access rate and respective distinct phase increments for the complex de-rotation, B) to execute the complex de-rotation by combinations of trigonometric multiplications using the distinct phase increments approximately concurrently and C) to execute the low pass filtering on the complex de-rotation resulting at the access rate and respective distinct phase increments, thus delivering GPS and Glonass signals separated from each other.

Abstract: A radiation sensor (27) includes a radiation sensor chip (1) including first (7) and second (8) thermopile junctions connected to form a thermopile (7,8). The first thermopile junction is disposed in a floating portion of a dielectric membrane (3) thermally insulated from a silicon substrate (2) of the chip, and the second thermopile junction is disposed in the dielectric membrane directly adjacent to the substrate. Bump conductors (28) are bonded to corresponding bonding pads (28A) coupled to the thermopile (7,8) to physically and electrically connect the chip to conductors on a printed circuit board (23). The silicon substrate transmits infrared radiation to the thermopile while blocking visible light.

Abstract: An integrated circuit with a core PMOS transistor formed in a first n-well and an isolated DENMOS (iso-DENMOS) transistor formed in a second n-well where the depth and doping of the first and second n-wells are the same. A method of forming an integrated circuit with a core PMOS transistor formed in a first n-well and an iso-DENMOS transistor formed in a second n-well where the depth and doping of the first and second n-wells are the same.

Abstract: An on-chip decoupling capacitor (106) and method of fabrication. The decoupling capacitor (106) is integrated at the top metal interconnect level (104) and includes surface protection cladding (109) for the copper metal (104b) of the top metal interconnect.

Abstract: An integrated circuit or circuit board includes functional circuitry and a scan path. The scan path includes a test data input lead, a test data output lead, a multiplexer, and scan cells. A dedicated scan cell has a functional data output separate from a test data output. Shared scan cells each have a combined output for functional data and test data. The shared scan cells are coupled in series. The test data input of the first shared scan cell is connected to the test data output of the dedicated scan cell. The combined output of one shared scan cell is coupled to the test data input lead of another shared scan cell. The multiplexer has an input coupled to the test data output, an input connected to the combined output lead of the last shared scan cell in the series, and an output connected in the scan path.

Abstract: An integrated circuit is described that has a substrate with a memory array with dedicated support hardware formed on the substrate. An access wrapper circuit is coupled to address and data lines of the memory array and to control lines of the dedicated support hardware. The wrapper circuit is configured to provide an access port to the memory array. A test controller is formed on the substrate and coupled in parallel with the access wrapper circuit to the address and data lines of the memory array and to the control lines of the dedicated support hardware, wherein the test controller is operable to perform a test of the memory array by manipulating control signals to the support hardware in addition to those required to write data patterns into the memory array and to read the contents of the memory array.

Abstract: A lid comprising a heat conductive substrate and a native silicon oxide layer connected to said substrate by at least one intermediate layer; a lidded integrated circuit package; and a method of providing a heat path through an integrated circuit package comprising providing a substrate with an exterior layer of native silicon oxide and interfacing the layer of native silicon oxide with a layer of thermal interface material.

Abstract: An integrated circuit includes a bidirectional ESD device which has a plurality of parallel switch legs. Each switch leg includes a first current switch and a second current switch in a back-to-back configuration. A first current supply node of each first current switch is coupled to a first terminal of the ESD device. A second current supply node of each second current switch is coupled to a second terminal of the ESD device. A first current collection node of each first current switch is coupled to a second current collection node of the corresponding second current switch. The first current collection nodes in each first current switch is not coupled to any other first current collection node, and similarly, the second current collection node in each instance second current switch is not coupled to any other second current collection node.

Abstract: An average current mode buck-boost DC to DC converter has a buck stage coupled between an input voltage source terminal and an output terminal. A boost stage is coupled between the input voltage source terminal and the output terminal. A current ramp control circuit generates a ramp signal for driving the buck and boost stages, the ramp signals being coupled to the buck and boost stages. A constant voltage related to the desired output voltage by a constant is applied directly to both a voltage control feedback loop for adjusting the output voltage and directly to an input to the current ramp control circuit, whereby the output voltage can be shifted from one voltage to another by feedforward control.

Abstract: A system and method of optimized user coherence for a cache block with sparse dirty lines is disclosed wherein valid and dirty bits of each set are logically AND'ed together and the result for multiple sets are logically OR'ed together resulting in an indication whether a particular block has any dirty lines. If the result indicates that a block does not have dirty lines, then that entire block can be skipped from being written back without affecting coherency.

Abstract: An integrated circuit package including a semiconductor die and a flexible circuit (flex circuit), and a method for forming the integrated circuit package. The flex circuit can include a direct connect pad which is not electrically coupled to an active trace, a blind via electrically coupled to the direct connect pad, and a semiconductor die having a bond pad which is electrically coupled to the direct connect pad using a conductor. The bond pad, the conductor, the direct connect pad, and the blind via can all be vertically aligned, each with the other.

Abstract: A memory arbiter minimizes latency of memory accesses in a system having multiple processors. The memory arbiter improves overall system performance by managing the memory requests from each processor individually before those requests are sent to a central memory arbiter for handling memory requests for the shared resources from the multiple processors. The local memory arbiter buffers the memory requests from a local processor, analyzes the buffered memory requests, and optimizes the requests by reordering commands according to a rule set, and by performing write merging and prefetch squashing in certain conditions.

Abstract: An integrated circuit containing a stacked bipolar transistor which includes two bipolar transistors connected in series is disclosed. Each bipolar transistor includes a breakdown inducing feature. The breakdown inducing features have reflection symmetry with respect to each other. A process for forming an integrated circuit containing a stacked bipolar transistor which includes two bipolar transistors connected in series, with breakdown inducing features having reflection symmetry, is also disclosed.

Abstract: A method for forming a semiconductor device includes physically attaching a first semiconductor die to front surface of a first substrate. The first die is electrically connected to routings on front surface of the first substrate. The routings are electrically connected with conductive pads on back surface of the first substrate. A second semiconductor die is physically attached to front surface of a second substrate. The die is electrically connected to routings on front surface of second substrate. These routings are electrically connected with conductive pads on front surface of the second substrate. A third semiconductor die is physically attached to the second die. The third die is electrically attached to the second die through a plurality of through substrate vias (TSVs) within the second die. The conductive pads on back surface of first substrate are electrically connected to the conductive pads on front surface of second substrate.

Abstract: A decoding circuit, is provided, comprising: a turbo decoder configured to receive a input systematic bit soft information values and input parity bit information values, and to generate output systematic bit soft information values and hard decoded bits according to a turbo decoding operation; and a parity bit soft information generation circuit configured to receive the input systematic bit soft information values, the input parity bit soft information values, and the output systematic bit soft information values; to determine initial forward metrics, initial backward metrics, and branch metrics as a function of the input parity bit soft information values and the output systematic bit soft information values; to determine output parity bit soft information values based on the branch metrics, the initial forward metrics, and the initial backward metrics; and to provide the output parity bit soft information values as a signal output.