Abstract: A system and method for initializing a register file during a test period for an integrated circuit, wherein the register file has one or more input ports. A counter, when enabled, is initialized and counts at each write cycle of the register file and outputs a current count value to the input ports of the register file to pre-load the register file to a known state.

Abstract: A radio receiver 102 is provided. The radio receiver 102 comprises one or more data Fast Fourier Transformers, each data Fast Fourier Transformer operable to perform a Fast Fourier Transform on an input data block, one or more impulse response Fast Fourier Transformers, each impulse response Fast Fourier Transformer operable to perform a Fast Fourier Transform on a channel impulse response, one or more multiplier components operable to multiply a term of the output of one of the data Fast Fourier Transformers by a term of the output of one of the impulse response Fast Fourier Transformers, and one or more Inverse Fast Fourier Transformers, each Inverse Fast Fourier Transformer operable to perform an Inverse Fast Fourier Transform based on an output of one or more of the multipliers.

Abstract: A trench is formed in a low K dielectric (100) over a plurality of vias (120) also formed in the low K dielectric layer (100). The vias are separated by a distance of less than XV and the edge of the trench is greater than XTO from the edge ? of the via closest to the edge of the trench. The trench and vias are subsequently filled with copper (150), (160) to form the interconnect line.

Abstract: A method of forming a rectifying diode. The method comprises providing a first semiconductor region of a first conductivity type and having a first dopant concentration and forming a second semiconductor region in the first semiconductor region. The second semiconductor region has the first conductivity type and having a second dopant concentration greater than the first dopant concentration. The method also comprises forming a conductive contact to the first semiconductor region and forming a conductive contact to the second semiconductor region. The rectifying diode comprises a current path, and the path comprises: (i) the conductive contact to the first semiconductor region; (ii) the first semiconductor region; (iii) the second semiconductor region; and (iv) the conductive contact to the second semiconductor region. The second semiconductor region does not extend to a layer buried relative to the first semiconductor region.

Abstract: Providing interpolated signals with enhanced signal-to-noise-ratio (SNR). In an embodiment, for each digital sample (of an analog signal) having strength Dn, N values are inserted, with the kth inserted value having a strength of Dn(1+/?Dk), wherein Dk is selected randomly from within a range set according to quantization noise. The received digital samples along with inserted digital values are provided as the interpolated signal corresponding to the input signal represented by the received digital samples.

Abstract: The present invention provides, in one embodiment, a gate structure (100). The gate structure comprises a gate dielectric (105) and a gate (110). The gate dielectric includes a refractory metal and is located over a semiconductor substrate (115). The semiconductor substrate has a conduction band and a valence band. The gate is located over the gate dielectric and includes the refractory metal. The gate has a work function aligned toward the conduction band or the valence band. Other embodiments include an alternative gate structure (200), a method of forming a gate structure (300) for a semiconductor device (301) and a dual gate integrated circuit (400).

Abstract: A data processing apparatus including a multiplier unit forming a product from L bits of each two data buses of N bits each N is greater than L. The multiplier forms a N bit output having a first portion which is the L most significant bits of the of product and a second portion which is M other bits not including the L least significant bits of the product, where N is the sum of M and L. In the preferred embodiment the M other bits are derived from other bits of the two input data busses, such as the M other bits of the first input data bus. An arithmetic logic unit performs parallel operations (addition, subtraction, Boolean functions) controlled by the same instructions. This arithmetic logic unit is divisible into a selected number of sections for performing identical operations on independent sections of its inputs. The multiplier unit may form dual products from separate parts of the input data.

Abstract: IEEE 1149.1 Test Access Ports (TAPs) may be utilized at both IC and intellectual property core design levels. TAPs serve as serial communication ports for accessing a variety of embedded circuitry within ICs and cores including; IEEE 1149.1 boundary scan circuitry, built in test circuitry, internal scan circuitry, IEEE 1149.4 mixed signal test circuitry, IEEE P5001 in-circuit emulation circuitry, and IEEE P1532 in-system programming circuitry. Selectable access to TAPs within ICs is desirable since in many instances being able to access only the desired TAP(s) leads to improvements in the way testing, emulation, and programming may be performed within an IC. A TAP linking module is described that allows TAPs embedded within an IC to be selectively accessed using 1149.1 instruction scan operations.

Abstract: An integrated circuit package lead frame, comprising a plurality of leads and a spine electrically connected to said plurality of leads, said spine comprising indentations between a pair of said leads. The indentations prevent the pair of leads from becoming electrically connected to each other after a singulation process.

Abstract: A computer system (10) and method are presented for performing ECC corrections on data contained in a mass data storage device (20). The computer system (10) has a host computer (12) having a CPU (14) and an associated mass data storage device (20). At least some ECC hardware is associated with the mass data storage device (25). A device driver (18) is associated with the host computer (12), which includes software instructions for execution by the CPU (14) for performing at least some ECC functions or instructions on data read from the mass data storage device (20).

Abstract: The present invention provides a tunable voltage controller for use with a sub-circuit. In one embodiment, the tunable voltage controller includes a diode-connected MOS transistor contained in a doped well of a substrate and configured to provide a voltage for the sub-circuit. Additionally, the tunable voltage controller also includes a biasing unit configured to adjust the voltage by selectively connecting the doped well to one of a plurality of voltage sources or to a variable voltage source.

Abstract: A semiconductor device is provided comprising a main electrode (4) and a dielectric (3) in contact with the main electrode (4), the main electrode (4) comprising a material having a work function and a work function modulating element (6) for modulating the work function of the material of the main electrode (4) towards a predetermined value. The main electrode (4) furthermore comprises a diffusion preventing dopant element (5) for preventing diffusion of the work function modulating element (6) towards and/or into the dielectric (3). Methods for forming such a semiconductor device are also described.

Abstract: The present invention provides a semiconductor device, a method of manufacture therefor, and an integrated circuit including the semiconductor device. The semiconductor device (100), among other possible elements, includes a gate oxide (140) located over a substrate (110), and a silicided gate electrode (150) located over the gate oxide (140), wherein the silicided gate electrode (150) includes a first metal and a second metal.

Abstract: An nth-order oscillator system for providing a resonating signal, a method of generating a resonating signal and a communications system. In one embodiment, the nth-order oscillator system, n being greater than two, includes (1) an amplifier configured to provide an intermediate signal and (2) a feedback loop including an nth-order complex LC tank and configured to generate the resonating signal by feeding back a complex-filtered form of the intermediate signal to the amplifier.

Abstract: Generating an output signal having a frequency of 1/(M+F) of the frequency of the input signal, wherein M represents an integer and F represents a non-zero fraction. Assuming F equals (Q/R) in one embodiment, wherein Q and R are integers, R intermediate signals phase shifted by equal degree (relative to the one with closest phase shift) in one clock period of the input signal are generated. A selection circuit may select one of the intermediate signals in one clock cycle, select the successive signals with increasing phase shift in Q clock cycles, and leave the intermediate signal with the same shift as in the previous clock cycle in the remaining ones of the M clock cycles. A counter counts a change of state in the output of the selection circuit, and generates a pulse representing an edge of the output signal at the time instance when counter counts M.

Abstract: The invention provides a method for manufacturing a microelectronic device and a microelectronic device. The method for manufacturing the microelectronic device, without limitation, may include forming a first mirror layer over and within one or more openings in a sacrificial spacer layer, and forming a dielectric layer over an upper surface of the first mirror layer and within the one or more openings. The method may further include subjecting the dielectric layer to an etch, the etch removing the dielectric layer from the upper surface and leaving dielectric portions along sidewalls of the one or more openings, and forming a second mirror layer over the first mirror layer and within the one or more openings, the dielectric portions separating the first mirror layer and the second mirror layer along the sidewalls.

Abstract: Automatic vision system object indexing and image database query system using both path-dependent and path-independent features of moving objects within a sequence of images. Feature vectors of both average over frames of an object traversing the field of view plus average over blocks of a grid for a path association. Color histograms may be an included feature.

Abstract: Methods and circuit embodiments are disclosed for implementing an improved signal path for a sample-and-hold output. In exemplary embodiments, a sample-and-hold signal path for use in a pipelined ADC includes a sample-and-hold circuit configured to operate in two distinct phases. The sample-and-hold circuit includes an input node, an output node, and a power supply node. The power supply node is configured to power down the op amp during one phase and power up the op amp during the other phase. The sample-and-hold stage is configured to provide output during one phase only. Other aspects of the invention include embodiments in which a sample-and-hold stage signal path in a pipelined analog-to-digital converter is configured to accommodate a plurality of parallel outputs.

Abstract: The present invention provides a method for implanting charged particles in a substrate and a method for manufacturing an integrated circuit. The method for implanting charged particles in a substrate, among other steps, includes projecting a beam of charged particles (320) to a substrate (330), the beam of charged particles (320) having a given beam divergence, and forming a diverged beam of charged particles (360) by subjecting the beam of charged particles (320) to an energy field (350), thereby causing the beam of charged particles (320) to have a larger beam divergence. The method then desires implanting the diverged beam of charged particles (360) into the substrate (330).

Abstract: Methods and systems are provided for determining efficacy of stress protection circuitry. The methods and systems employ a ring oscillator that models at least one parameter of a functional circuit to be protected by the stress protection circuit. A stress signal is applied to the ring oscillator and parametric degradation is measured to determine the effectiveness of the stress protection circuit in protecting the ring oscillator. A stress signal can be a voltage or current that stresses the normal operation of a functional circuit. The parametric degradation of the ring oscillator can be correlated to the parametric degradation that would be experienced by the functional circuit.