Abstract: A system of heating a sample on a microchip includes the steps of providing a microchannel flow channel in the microchip; positioning the sample within the microchannel flow channel, providing a laser that directs a laser beam onto the sample for heating the sample; providing the microchannel flow channel with a wall section that receives the laser beam and enables the laser beam to pass through wall section of the microchannel flow channel without being appreciably heated by the laser beam; and providing a carrier fluid in the microchannel flow channel that moves the sample in the microchannel flow channel wherein the carrier fluid is not appreciably heated by the laser beam.

Abstract: A system of heating a sample on a microchip includes the steps of providing a microchannel flow channel in the microchip; positioning the sample within the microchannel flow channel, providing a laser that directs a laser beam onto the sample for heating the sample; providing the microchannel flow channel with a wall section that receives the laser beam and enables the laser beam to pass through wall section of the microchannel flow channel without being appreciably heated by the laser beam; and providing a carrier fluid in the microchannel flow channel that moves the sample in the microchannel flow channel wherein the carrier fluid is not appreciably heated by the laser beam.

Abstract: A system of heating a sample on a microchip includes the steps of providing a microchannel flow channel in the microchip; positioning the sample within the microchannel flow channel, providing a laser that directs a laser beam onto the sample for heating the sample; providing the microchannel flow channel with a wall section that receives the laser beam and enables the laser beam to pass through wall section of the microchannel flow channel without being appreciably heated by the laser beam; and providing a carrier fluid in the microchannel flow channel that moves the sample in the microchannel flow channel wherein the carrier fluid is not appreciably heated by the laser beam.

Abstract: A method for producing micro-elements, such as micro-lenses and computer generated holograms using a gray scale mask formed of a high energy beam sensitive glass plate which may be darkened by direct writing of an electron beam to record a gray scale pattern corresponding to a predetermined depth level to be etched into a photoresist coated substrate. The high energy beam sensitive glass may have a base glass composition which is provided with an ion exchanged surface layer containing a high concentration of silver ions. High energy beam sensitive glass plates are exposed to various electron beam charge densities at relatively low acceleration voltages and over relatively small grid spacings to provide a wide range of gray levels. Photoresist coated substrates are exposed through the gray scale mask and subsequently etched by chemically assisted ion beam milling to produce high efficiency micro-lenses and similar micro-elements having high surface resolution.

Abstract: A microfabricated capillary electrophoresis chip which includes an integral thin film electrochemical detector for detecting molecules separated in the capillary.

Abstract: A bipolar transistor includes multiple coupled delta layers in the base region between the emitter and collector regions to enhance carrier mobility and conductance. The delta layers can be varied in number, thickness, and dopant concentration to optimize desired device performance and enhanced mobility and conductivity vertically for emitter to collector and laterally parallel to the delta-doped layers. The transistors can be homojunction devices or heterojunction devices formed in either silicon or III-V semiconductor material.

Abstract: Carrier mobility in a heterojunction field effect device is increased by reducing or eliminating alloy scattering. The active channel region of the field effect device uses alternating layers of pure silicon and germanium which form a short period superlattice with the thickness of each layer in the superlattice being no greater than the critical thickness for maintaining a strained heterojunction. The gate contact of the field effect device can comprise quantum Si/Ge wires which provide quantum confinement in the growth plane, thereby allowing the field effect device to further improve the mobility by restricting phonon scattering. The structure can be used to improve device speed performance.