Patents Assigned to Tokyo Electron Limited
  • Patent number: 12033872
    Abstract: A substrate processing apparatus includes: a processing container, a mixing device, a liquid feeding path, and a controller. The processing container processes a substrate by immersing the substrate in a processing liquid. The mixing device mixes a phosphoric acid aqueous solution and an additive, to produce a mixed liquid to be used as a raw material of the processing liquid. The liquid feeding path feeds the mixed liquid from the mixing device to the processing container. The controller controls the substrate processing apparatus. The controller performs a control to feed the mixed liquid from the mixing device to the processing container in which the substrate is immersed, after a phosphoric acid concentration of the mixed liquid is regulated from a first concentration to a second concentration higher than the first concentration. The first concentration is a concentration when the phosphoric acid aqueous solution is supplied to the mixing device.
    Type: Grant
    Filed: May 21, 2021
    Date of Patent: July 9, 2024
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Keita Hirase, Koji Ogura, Hiroshi Yoshida, Takashi Nagai, Jun Nonaka, Takumi Honda
  • Patent number: 12033864
    Abstract: A substrate processing method includes providing a substrate into a chamber, the substrate including a silicon oxide film and a mask of an organic film on the silicon oxide film, etching the silicon oxide film with a first plasma generated from a first process gas, the first process gas including a fluorocarbon gas and a hydrogen-containing gas, and further etching the silicon oxide film with a second plasma generated from a second process gas, the second process gas including a fluorocarbon gas. A flow rate of the hydrogen-containing gas included in the first process gas is less than a flow rate of the fluorocarbon gas included in the first process gas.
    Type: Grant
    Filed: January 25, 2022
    Date of Patent: July 9, 2024
    Assignee: Tokyo Electron Limited
    Inventors: Hiromi Miyashita, Rei Shoji
  • Patent number: 12033833
    Abstract: There is provided a radio frequency power filter circuit used in a plasma processing apparatus that includes an electrode and a feeding body connected to a center of a rear surface of the electrode and generates plasma by applying radio frequency power, the filter circuit including a series resonance circuit provided in a wiring line between a conductive member provided in the plasma processing apparatus and a power supply configured to supply DC power or power having a frequency of less than 400 kHz to the conductive member, and including a coil connected in series to the wiring line and a capacitor connected between the wiring line and a ground. A central axis of the coil and a central axis of the feeding body coincide with each other.
    Type: Grant
    Filed: January 28, 2022
    Date of Patent: July 9, 2024
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Koji Yamagishi, Yuji Aota, Koichi Nagami, Kota Ishiharada
  • Patent number: 12032355
    Abstract: A method for detecting an endpoint of a seasoning process for a plasma tool includes (a) operating the plasma tool to run a seasoning recipe on at least one seasoning wafer before running a monitoring recipe on at least one monitoring wafer; (b) collecting, while running the monitoring recipe on the monitoring wafer, monitoring data associated with the running the monitoring recipe; and (c) generating an estimated product parameter using a virtual metrology (VM) model that is configured to estimate a product parameter using the monitoring data. The VM model is based on production data associated with running a production recipe on production wafers and product parameters of the production wafers measured after the running the production recipe. The endpoint of the seasoning process is obtained by repeating (a), (b) and (c), and the endpoint is obtained when the estimated product parameter stabilizes.
    Type: Grant
    Filed: March 31, 2022
    Date of Patent: July 9, 2024
    Assignee: Tokyo Electron Limited
    Inventors: Jun Shinagawa, Brian Pfeifer, John Solis, Brian Gessler, Koichiro Nakamura, Yutaka Hirooka
  • Patent number: 12030179
    Abstract: A method and system for teaching a transfer device including a substrate holder and a first detector disposed at the substrate holder is disclosed. The method comprises detecting a vertical position of an object by the first detector while moving the substrate holder in a vertical direction, and setting a teaching position of the substrate holder in the vertical direction based on the detected vertical position of the object; and setting a teaching position of the substrate holder in a horizontal direction based on a horizontal position of the substrate holder at which the substrate holder is detected by a second detector while moving the substrate holder in the horizontal direction, the second detector being disposed at a position different from a position of the transfer device.
    Type: Grant
    Filed: February 10, 2021
    Date of Patent: July 9, 2024
    Assignee: TOKYO ELECTRON LIMITED
    Inventor: Toshiaki Toyomaki
  • Patent number: 12033838
    Abstract: A plasma processing apparatus including a processing container and a conductive member, includes a plasma generator configured to generate plasma in the processing container, a power application part configured to apply a DC power to the conductive member in a state in which plasma is generated in the processing container by the plasma generator, a measurement part configured to measure a physical quantity related to the DC power applied by the power application part, and a calculator configured to obtain a wear amount of the conductive member using the measured physical quantity related to the DC power in a correlation function between the wear amount of the conductive member and the physical quantity related to the DC power.
    Type: Grant
    Filed: March 9, 2021
    Date of Patent: July 9, 2024
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Joji Takayoshi, Ryuta Akimoto, Takehito Watanabe
  • Patent number: 12033832
    Abstract: A disclosed plasma processing method includes generating plasma in a chamber of a plasma processing apparatus by supplying radio frequency power from a radio frequency power source in a first period. The plasma processing method further includes stopping supply of the radio frequency power from the radio frequency power source in a second period following the first period. The plasma processing method further includes applying a negative direct-current voltage from a bias power source to a substrate support in a third period following the second period. In the third period, the radio frequency power is not supplied. In the third period, the negative direct-current voltage is set to generate ions in a chamber by secondary electrons that are emitted by causing ions in the chamber to collide with a substrate.
    Type: Grant
    Filed: June 8, 2022
    Date of Patent: July 9, 2024
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Shinji Kubota, Kazuya Nagaseki, Shinji Himori, Koichi Nagami
  • Patent number: 12033878
    Abstract: A substrate transfer apparatus includes a planar motor provided in a transfer chamber and having coils arranged therein, a transfer unit movable on the planar motor, and a control unit configured to control an energization of the coils. The transfer unit includes two bases having magnets arranged thereon and configured to be movable on the planar motor, a substrate support member configured to support a substrate, and a link mechanism configured to connect the two bases and the substrate support member to each other.
    Type: Grant
    Filed: August 7, 2023
    Date of Patent: July 9, 2024
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Tatsuo Hatano, Tetsuya Miyashita, Naoki Watanabe, Naoyuki Suzuki
  • Patent number: 12033886
    Abstract: A plasma processing apparatus includes a mounting stage including a mounting surface, on which an object to be processed is mounted, a back surface provided on a side opposite to the mounting surface, a plate-like member, in which a first hole penetrating through the mounting surface and the back surface is formed, and a base having a supporting surface for supporting the plate-like member and having a second hole communicating with the first hole; and an embedment member disposed inside the first and second holes, the first embedment member being disposed inside the first hole, the second embedment member being disposed inside the second hole, wherein the first embedment member and the second embedment member are not mutually fixed, and the first embedment member has a portion having a wider width than a width of an upper end portion on a lower side than the upper end portion.
    Type: Grant
    Filed: February 22, 2019
    Date of Patent: July 9, 2024
    Assignee: Tokyo Electron Limited
    Inventors: Yasuharu Sasaki, Ryo Chiba, Akira Nagayama
  • Patent number: 12032294
    Abstract: A device includes a chemical solution flow path in which a chemical solution containing polymers flows; a laser beam irradiator configured to irradiate a laser beam to the chemical solution flow path such that an optical path is intersected with a flow direction of the chemical solution in the chemical solution flow path; a light receiving element provided in the optical path passing through the chemical solution flow path; a detector configured to detect, based on a signal output from the light receiving element, an abnormality in a state of polymers corresponding to a majority of the polymers contained in the chemical solution or configured to detect a ratio between a chemical solution containing the polymers and another chemical solution in the chemical solution flow path.
    Type: Grant
    Filed: April 1, 2019
    Date of Patent: July 9, 2024
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Masato Hayashi, Takuya Mori, Hideo Shite, Hirokazu Sakamoto
  • Publication number: 20240222085
    Abstract: A plasma processing method is implementable with a plasma processing apparatus. The plasma processing method includes applying a voltage to a lower electrode in a substrate support with a gas being supplied into a chamber in the plasma processing apparatus. The substrate support is located in the chamber. The plasma processing method further includes generating plasma by providing a radio-frequency wave after application of the voltage to the lower electrode is started. In the method, the applying of the voltage and the generating of the plasma are performed without an object on a substrate support surface of the substrate support.
    Type: Application
    Filed: March 15, 2024
    Publication date: July 4, 2024
    Applicant: Tokyo Electron Limited
    Inventors: Koichiro NAKAMURA, Norihisa KIYOFUJI
  • Publication number: 20240222132
    Abstract: Methods for the fabrication of semiconductor devices are disclosed. A method may include depositing a mask layer on a substrate, forming a protection layer on the mask layer, and modifying the protection layer such that a porosity of the protection layer is reduced. Modifying the protection layer may include densifying the protection layer. Modifying the protection layer may include reducing the protection layer using a hydrogen plasma. The method may include etching the protection layer and the substrate. Etching may include etching, forming the protection layer, and modifying the protection layer in a predetermined number of cycles.
    Type: Application
    Filed: December 28, 2022
    Publication date: July 4, 2024
    Applicant: Tokyo Electron Limited
    Inventors: Jinying Lin, Minjoon Park
  • Publication number: 20240222095
    Abstract: A plasma processing apparatus for performing plasma processing on a substrate, includes: a chamber; a substrate support provided inside the chamber, including a region where the substrate is supported and an edge ring provided around the region, and configured to support the substrate inside the edge ring; a plasma generator provided inside the chamber to generate plasma; a lifter provided inside the chamber to control a distance between the substrate support and the substrate; and a controller, wherein the controller controls: the lifter to position the substrate at a first position spaced apart by a first distance from the substrate support; the plasma generator to generate plasma inside the chamber while the substrate is at the first position; and the lifter to place the substrate on the substrate support inward of the edge ring from the first position while the plasma is generated inside the chamber.
    Type: Application
    Filed: March 14, 2024
    Publication date: July 4, 2024
    Applicant: Tokyo Electron Limited
    Inventors: Takashi YAMAMURA, Chunhsiang YANG, Yasutaka HAMA
  • Publication number: 20240222092
    Abstract: A plasma processing apparatus includes a plasma processing chamber, a base in the plasma processing chamber, and an electrostatic chuck on the base. The electrostatic chuck includes a dielectric structure having a substrate support surface and a ring support surface, an electrostatic clamp electrode inside the dielectric structure, a bias electrode inside the dielectric structure and below the electrostatic clamp electrode, and at least one conductive structure at least partially located inside the dielectric structure. The dielectric structure has a through-hole extending through the dielectric structure from the substrate support surface or the ring support surface to a lower surface of the dielectric structure. The at least one conductive structure surrounds the through-hole and extends upward from a same level as the bias electrode in a height direction or from a higher level than the bias electrode.
    Type: Application
    Filed: March 15, 2024
    Publication date: July 4, 2024
    Applicant: Tokyo Electron Limited
    Inventors: Takahiko SATO, Tetsuo YOSHIDA
  • Publication number: 20240222080
    Abstract: In a plasma processing apparatus, electrical bias energy is provided from a bias power supply to a substrate support. Source radio-frequency power is provided from a radio-frequency power supply to a radio-frequency electrode. The radio-frequency power supply selects, from a plurality of frequency groups, an initial frequency group corresponding to a specified process. The radio-frequency power supply uses, in a first period, a plurality of frequencies included in the initial frequency group as a plurality of source frequencies of the source radio-frequency power for a respective plurality of phase periods in a waveform cycle of the electrical bias energy. The radio-frequency power supply adjusts, in a second period, the plurality of source frequencies of the source radio-frequency power for the respective plurality of phase periods in a waveform cycle of the electrical bias energy.
    Type: Application
    Filed: March 15, 2024
    Publication date: July 4, 2024
    Applicant: Tokyo Electron Limited
    Inventor: Yuto KOSAKA
  • Publication number: 20240222118
    Abstract: A method for manufacturing semiconductor devices is disclosed. The method includes forming a photomask layer disposed on a dielectric material, wherein the photomask layer comprises a polymer layer. The method includes partially etching the polymer layer to form a first opening. The method includes overlaying partial sidewalls of the first opening with a first silicon layer. The method includes further etching the polymer layer, with the first silicon layer serving as a mask, to extend the first opening to form a second opening.
    Type: Application
    Filed: December 28, 2022
    Publication date: July 4, 2024
    Applicant: Tokyo Electron Limited
    Inventors: Peng WANG, Emilia HIRSCH
  • Publication number: 20240222969
    Abstract: A power supply system includes a power supply, a plurality of power feeding devices coupled to the power supply, a plurality of semiconductor manufacturing systems, and processing circuitry. Each of the plurality of semiconductor manufacturing systems includes a plurality of substrate processing chambers and a power receiving device that wirelessly receives power from a power feeding device of the plurality of power feeding devices. The processing circuitry controls the power distribution unit to adjust a maximum effective power supplied from the power supply to each of the plurality of semiconductor manufacturing systems through the power feeding device based on a power use status in each of the plurality of semiconductor manufacturing systems.
    Type: Application
    Filed: March 15, 2024
    Publication date: July 4, 2024
    Applicant: Tokyo Electron Limited
    Inventor: Naoki MATSUMOTO
  • Publication number: 20240222091
    Abstract: An electrostatic chuck includes a substrate support to support at least one of a substrate or an edge ring, an electrostatic electrode inside the substrate support to electrostatically clamp at least one of the substrate or the edge ring, and an electrode inside the substrate support and located on a plane different from a plane on which the electrostatic electrode is located. The substrate support has a through-hole extending through the substrate support from an upper surface of the substrate support to a lower surface of the substrate support. The electrode is at least partially located between the electrostatic electrode and the through-hole.
    Type: Application
    Filed: March 15, 2024
    Publication date: July 4, 2024
    Applicant: Tokyo Electron Limited
    Inventor: Koei ITO
  • Publication number: 20240222169
    Abstract: A temperature control device includes a main tank configured to store a heating medium, a first sub-tank at a position above a reference position in the main tank, a second sub-tank at a position below the reference position in the main tank, a first connector pipe connecting the first sub-tank and the main tank and including a first valve, a second connector pipe connecting the second sub-tank and the main tank and including a second valve, and a controller circuit configured to control the first valve and the second valve based on a liquid amount of the heating medium in the main tank.
    Type: Application
    Filed: March 15, 2024
    Publication date: July 4, 2024
    Applicant: Tokyo Electron Limited
    Inventor: Kei KOBAYASHI
  • Publication number: 20240222075
    Abstract: A plasma processing apparatus includes a first power source configured to supply a first electric signal to an antenna, the first electric signal including a first RF signal having a first RF frequency; a second power source configured to supply a second electric signal to at least one electrode, the second electric signal including a second RF signal having a second RF frequency; a third power source configured to supply a third electric signal to the at least one electrode, the third electric signal including a third RF signal or a DC signal having a third RF frequency that is lower than the first RF frequency and the second RF frequency; and a controller configured to control the first power source, the second power source, and the third power source so as to selectively execute a first, a second, and a third plasma processing mode.
    Type: Application
    Filed: March 14, 2024
    Publication date: July 4, 2024
    Applicant: Tokyo Electron Limited
    Inventors: Naoki MATSUMOTO, Ken KOBAYASHI, Shinya TAMONOKI