Abstract: A chemical processing system and a method of using the chemical processing system to treat a substrate with a mono-energetic space-charge neutralized neutral beam-activated chemical process is described. The chemical processing system comprises a first plasma chamber for forming a first plasma at a first plasma potential, and a second plasma chamber for forming a second plasma at a second plasma potential greater than the first plasma potential, wherein the second plasma is formed using electron flux from the first plasma. Further, the chemical processing system comprises a substrate holder configured to position a substrate in the second plasma chamber.
Abstract: In a cleaning method according to an exemplary embodiment, a plasma is formed from a cleaning gas in a chamber of a plasma processing apparatus. A focus ring is mounted on a substrate support in the chamber to extend around a central axis of the chamber. While the plasma is formed, a magnetic field distribution is formed in the chamber by an electromagnet. The magnetic field distribution has a maximum horizontal component in a location on the focus ring or a location outside the focus ring in a radial direction with respect to the central axis.
Abstract: A method of manufacturing a semiconductor device having a metal oxide film with workpiece accommodated in a chamber, includes: supplying a precursor gas containing a metal complex into the chamber to form a precursor layer on the workpiece from the precursor gas; supplying an oxidizing gas into the chamber to oxidize the precursor layer so that a metal oxide layer is formed, the oxidizing gas being a gas containing H2O or a gas having a functional group containing hydrogen atoms in the metal complex and containing an oxidant to generate H2O by reaction with the functional group; supplying an H2O removal gas containing alcohols or amines into the chamber to remove H2O adsorbed onto the metal oxide layer; and executing a plurality of cycles each including the supplying a precursor gas and the supplying an oxidizing gas. At least some of the cycles includes the supplying an H2O removal gas.
Abstract: In a method of etching according to one embodiment, a multilayer film having a magnetic tunnel junction layer is etched. In the method of etching, a plasma processing apparatus is used. A chamber body of the plasma processing apparatus provides an internal space. In the method of etching, a workpiece is accommodated in the internal space. Next, the multilayer film is etched by plasma of a first gas generated in the internal space. The first gas includes carbon and a rare gas and does not include hydrogen. Next, the multilayer film is further etched by plasma of a second gas generated in the internal space. The second gas includes oxygen and a rare gas and does not include carbon and hydrogen.
Abstract: An etching method includes: providing a substrate having a film and a patterned mask on the film; forming a silicon-containing layer including silicon, carbon, and nitrogen on the substrate using a precursor gas containing silicon; and performing a plasma etching on the film. The substrate is placed under a depressurized environment for a time period from a start time point of the step of forming the silicon-containing layer on the substrate to an end time point of the step of performing the plasma etching on the film.
Abstract: A liquid processing method can remove pure water existing within a pattern of a substrate and replace the pure water with a solvent rapidly. The liquid processing method of supplying the pure water onto the substrate, which is horizontally held and has the pattern formed on a surface thereof, and drying the substrate includes a pure water supplying process of supplying the pure water onto the surface of the substrate; a heated solvent supplying process of supplying, after the pure water supplying process, the solvent in a liquid state, which is heated to a temperature equal to or higher than a boiling point of water, onto the surface of the substrate on which the pure water exists; and a removing process of drying the substrate by removing the solvent form the surface of the substrate.
Abstract: A mounting table includes a base member, having a rear surface and a front surface facing the rear surface, in which a coolant path is formed, a groove portion having a bottom surface within the base member being annularly formed on the front surface, the base member being divided into a cylindrical inner base member portion positioned at an inner side of the groove portion and an annular outer base member portion positioned at an outer side of the groove portion by the groove portion; an annular focus ring supported by the outer base member portion, the annular focus ring having, at an inner side surface thereof, a protrusion that is protruded radially and inwardly to cover the groove portion; a first heat transfer member provided between the mounting surface and the coolant path; and a second heat transfer member provided between the focus ring and the coolant path.
Abstract: A microwave plasma source for forming a surface wave plasma by radiating a microwave into a chamber of a plasma processing apparatus, includes: a microwave output part; a microwave transmission part configured to transmit microwave outputted from the microwave output part; and a microwave radiation member configured to radiate the microwave into the chamber, wherein the microwave transmission part includes a microwave introduction mechanism configured to introduce the microwave into the microwave radiation member. The microwave radiation member includes: a metal main body; a dielectric slow-wave member installed in a portion of the main body; a plurality of slots configured to radiate the microwave introduced through the dielectric slow-wave member therethrough; and a dielectric microwave transmission member installed in a portion facing the chamber in the main body to cover a region where the slots are formed; and a plurality of dielectric layers installed to be separated from each other.
Abstract: A method is provided for self-aligned multi-patterning on a semiconductor workpiece using an integrated sequence of processing steps executed on a common manufacturing platform hosting film-forming modules, etching modules, and transfer modules. A workpiece having a mandrel pattern formed thereon is received into the common manufacturing platform. A sidewall spacer pattern is formed based, at least in part, on the mandrel pattern, the sidewall spacer pattern having a plurality of second features separated by a second pitch distance with the first pitch distance being greater than the second pitch distance. The integrated sequence of processing steps is executed within the common manufacturing platform without leaving the controlled environment and the transfer modules are used to transfer the workpiece between the processing modules while maintaining the workpiece within the controlled environment.
March 18, 2019
Date of Patent:
July 28, 2020
Tokyo Electron Limited
Robert Clark, Richard Farrell, Kandabara Tapily, Angelique Raley, Sophie Thibaut
Abstract: Provided is a matching device capable of realizing a high-speed matching operation. A matching device of an embodiment includes a series part, a parallel part, and one or more variable direct-current power sources. The series part includes a first diode having a variable capacitance and is provided between an input terminal of a radio frequency wave and an output terminal of a radio frequency wave. The parallel part includes a second diode having a variable capacitance and is provided between a node between the input terminal and the output terminal and a ground. The one or more variable direct-current power sources are provided to apply variable reverse bias voltages to the first diode and the second diode.
Abstract: An etching method include: etching a silicon-containing film or a metal-containing film formed on a substrate; and heating the substrate by temporarily irradiating the substrate with electromagnetic waves during the etching.
Abstract: A plasma processing apparatus according to an exemplary embodiment includes a chamber, a substrate support, an upper electrode, a radio frequency power source, and a direct-current power source device. The substrate support includes a lower electrode. The lower electrode is provided in the chamber. The upper electrode is provided above the substrate support. The radio frequency power source generates a plasma in the chamber. The direct-current power source device is electrically connected to the upper electrode. The direct-current power source device is configured to periodically generate a pulsed negative direct-current voltage. An output voltage of the direct-current power source device is alternately switched between a negative direct-current voltage and zero volts.
Abstract: A mounting table has a first surface for mounting jigs one by one and a second surface for mounting a ring member. An acquisition unit acquires a gap dimension between the second surface and a facing portion of the mounted jig. A measurement unit measures a lifted distance of the ring member at each of circumferential multiple locations when an upper surface of the ring member is in contact with the facing portion. A thickness calculation unit calculates, for each of the multiple locations, thickness at each of different radial positions of the ring member based on the gap dimension and the lifted distance. A misalignment calculation unit specifies a characteristic position of the ring member for each of the multiple locations based on the calculated thickness and calculate a misalignment amount between a center of a circle passing through the characteristic positions and a center of the first surface.
Abstract: An etching method includes a step of selectively forming deposit on a top surface of a mask disposed on a film of a substrate, a step of etching the film after the step of forming the deposit, a step of forming a layer of chemical species included in plasma of a processing gas, on the substrate, and a step of supplying ions from plasma of an inert gas to the substrate so that the chemical species react with the film.
Abstract: An upper electrode for a plasma processing apparatus, includes an electrode having a gas discharge hole, a gas plate having a gas flow path formed at a position facing the gas discharge hole to supply a processing gas to the gas discharge hole, an electrostatic attraction part interposed between the electrode and the gas plate and having a contact surface that is in contact with a lower surface of the gas plate and an attraction surface that attracts an upper surface of the electrode, and a shield that shields radicals or gas moving from the gas discharge hole to a gap between the electrode and the gas plate.
January 9, 2020
July 23, 2020
Tokyo Electron Limited
Gen TAMAMUSHI, Kazuya NAGASEKI, Chishio KOSHIMIZU
Abstract: A measuring device includes a switch that switches a connection of an electrode to which a direct current voltage is applied, wherein the electrode is within an electrostatic chuck disposed in a plasma processing device; a component provided with electrostatic capacitance, wherein the component is connected to the switch; and a measuring unit that measures a value corresponding to an electric charge amount accumulated in the component provided with the electrostatic capacitance.
Abstract: An etching method for etching an etching target film using a first organic film processed to have a plurality of line patterns formed on the etching target film, an oxide film conformally formed on a front surface of the etching target film so as to provide a space between adjacent line patterns, and a second organic film formed to embed the space, includes etching back the second organic film and the oxide film using an etching gas whose etching selection ratio is adjusted for the second organic film based on a line width and a width of the space so as to cause an upper surface of the first organic film to be exposed, removing the oxide film between the line pattern and the space, and etching the etching target film using the first organic film and the second organic film as a mask.
Abstract: A substrate processing apparatus includes: a substrate holder to vertically load a plurality of substrates in multiple stages with an interval therebetween and including a plurality of partition plates vertically partitioning a region where the plurality of substrates are loaded; a process chamber to receive the substrate holder therein; protrusions protruding inward toward the outer circumferential surfaces of the partition plates from an inner circumferential wall surface within the process chamber, which faces the outer circumferential surfaces of the partition plates, to form clearances between inner circumferential surfaces formed on the protruding tip ends of the protrusions and the outer circumferential surfaces of the partition plates; and a gas supply part to supply inert gas into the clearances, which are formed between the inner circumferential surfaces of the protrusions and the outer circumferential surfaces of the partition plates, to form positive-pressure sections subjected to a pressure highe
Abstract: There is provided a substrate processing apparatus having a transfer arm configured to transfer two substrates between a transfer chamber and a processing chamber having two mounting tables, the transfer arm holding the two substrates in a state where the two substrates overlap each other with a gap between the two substrates. The substrate processing apparatus includes: a lower substrate detection sensor configured to detect an edge portion of a lower substrate when the lower substrate is transferred; and an upper substrate detection sensor configured to detect an edge portion of an upper substrate when the upper substrate is transferred.
Abstract: A mounting table includes a base and an electrostatic chuck provided on the base. The base has first and second top surface on which the electrostatic chuck and a focus ring are respectively provided. The second top surface is provided below the first top surface. A coolant path in the base has central and peripheral paths extending below the first and second top surfaces, respectively. The peripheral path has a portion extending along a side surface toward the first top surface. The mounting surface has central and peripheral regions. The mounting surface has protrusions formed in a dot shape. The protrusions are formed such that a contact area between the protrusions of the peripheral region and the backside of an object per unit area becomes greater than a contact area between the protrusions of the central region and the backside of the object per unit area.