Patents Assigned to Tokyo Electron Limited
  • Publication number: 20240222185
    Abstract: A substrate transfer system includes a substrate processing assembly, a substrate transfer assembly, and a controller. The substrate processing assembly includes a substrate processing chamber, a substrate support, and a first temperature sensor that measures a temperature of the substrate support. The substrate transfer assembly includes a substrate transfer chamber, a robotic substrate transferrer, and a temperature control system. The robotic substrate transferrer includes a first end-effector that holds a high-temperature substrate, a second end-effector that holds a low-temperature substrate, and a deposit detector located adjacent to at least one of the end-effectors.
    Type: Application
    Filed: March 15, 2024
    Publication date: July 4, 2024
    Applicant: Tokyo Electron Limited
    Inventors: Tatsuru OKAMURA, Norihiko AMIKURA, Masatomo KITA, Takehiro SHINDO
  • Publication number: 20240222078
    Abstract: In a plasma processing apparatus, electrical bias energy is provided from a bias power supply to a substrate support. Source radio-frequency power is provided from a radio-frequency power supply to a radio-frequency electrode through a feed line. A phase period having a minimum value of a power level of a reflected wave of the source radio-frequency power is identified from a plurality of phase periods in a bias cycle of the electrical bias energy. A reference value being a phase difference between a voltage and a current on the feed line in the identified phase period is determined. A source frequency of the source radio-frequency power is controlled for each phase period based on a result of comparison between the reference value and the phase difference between the voltage and the current on the feed line in a corresponding phase period of the plurality of phase periods.
    Type: Application
    Filed: March 15, 2024
    Publication date: July 4, 2024
    Applicant: Tokyo Electron Limited
    Inventor: Gen TAMAMUSHI
  • Publication number: 20240222100
    Abstract: An apparatus for in-situ etching monitoring in a plasma processing chamber includes a continuous wave broadband light source, an illumination system configured to illuminate an area on a substrate with an incident light beam being directed from the continuous wave broadband light source at normal incidence to the substrate, a collection system configured to collect a reflected light beam being reflected from the illuminated area on the substrate, and to direct the reflected light beam to a first light detector, and a controller. The controller is configured to determine a property of the substrate or structures formed thereupon based on a reference light beam and the reflected light beam, and control an etch process based on the determined property. The reference light beam is generated by the illumination system by splitting a portion of the incident light beam and directed to a second light detector.
    Type: Application
    Filed: March 14, 2024
    Publication date: July 4, 2024
    Applicant: Tokyo Electron Limited
    Inventors: Shan HU, Peter DELIA, Scott LEFEVRE
  • Patent number: 12027393
    Abstract: A substrate processing apparatus includes a processing unit configured to perform a preset processing on a substrate; a transfer unit, including a holder configured to hold the substrate, configured to carry the substrate into/from the processing unit by displacing the holder which holds the substrate; and a substrate inspection unit configured to acquire, at an outside of the processing unit, information indicating a surface state of the substrate held by the holder.
    Type: Grant
    Filed: April 21, 2021
    Date of Patent: July 2, 2024
    Assignee: TOKYO ELECTRON LIMITED
    Inventor: Takuya Mori
  • Patent number: 12027347
    Abstract: A plasma processing apparatus includes a vacuum-exhaustible processing container, an electrode installed in the processing container, a plurality of power feeding portions connected to a peripheral portion of a back surface of the electrode, a high-frequency power supply configured to supply high-frequency power to the electrode through the plurality of power feeding portions, and a control unit. The control unit is configured to control the plasma processing apparatus to periodically apply the high-frequency power to each of the plurality of power feeding portions.
    Type: Grant
    Filed: September 9, 2021
    Date of Patent: July 2, 2024
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Naoki Matsumoto, Masaru Sasaki
  • Patent number: 12024776
    Abstract: A gas supply apparatus supplies a gas to a processing space where a gas processing is performed on a substrate. The gas supply apparatus includes: a gas supply source configured to supply a gas; a gas supply path configured to supply the gas to the processing space; an opening/closing valve configured to supply/stop the gas and provided in the gas supply path; a detector configured to detect a detectable index correlated with a Cv value of the opening/closing valve; an opening degree adjustment mechanism configured to adjust an opening degree of the opening/closing valve when the opening/closing valve is opened; and a controller configured to: store a relationship between the Cv value and the index; and control the opening degree by the opening degree adjustment mechanism such that when the index deviates from an appropriate range corresponding to an appropriate Cv value, the index falls within the appropriate range.
    Type: Grant
    Filed: March 23, 2022
    Date of Patent: July 2, 2024
    Assignee: Tokyo Electron Limited
    Inventor: Yuji Obata
  • Patent number: 12027394
    Abstract: A method includes: supplying a processing liquid to a center position of a substrate surface; shifting a supply position of the processing liquid from the center position to a first eccentric position; holding the supply position of the processing liquid at the first eccentric position and supplying a substitute liquid to a second eccentric position; shifting the supply position of the processing liquid in a direction away from the center position, and shifting a supply position of the substitute liquid to the center position; and supplying the processing liquid to the first eccentric position at a first flow rate, and reducing the flow rate of the processing liquid to a second flow rate after the supply position of the processing liquid starts to be shifted from the first eccentric position in the direction and until the supply position of the substitute liquid reaches the center position.
    Type: Grant
    Filed: April 7, 2023
    Date of Patent: July 2, 2024
    Assignee: Tokyo Electron Limited
    Inventors: Hiroki Sakurai, Kazuki Kosai, Kazuyoshi Shinohara
  • Patent number: 12027344
    Abstract: A film forming apparatus includes a vacuum-evacuable processing chamber, a lower electrode for mounting thereon a target substrate, an upper electrode disposed to face the lower electrode, a gas supply unit, a voltage application unit and a switching unit. The gas supply unit supplies a film forming source gas to be formed into plasma to a processing space between the upper and the lower electrode. The voltage application unit applies to the upper electrode a voltage outputted from at least one of a high frequency power supply and a DC power supply included therein. The switching unit selectively switches the voltage to be applied to the upper electrode among a high frequency voltage outputted from the high frequency power supply, a DC voltage outputted from the DC power supply, and a superimposed voltage in which the DC voltage is superimposed with the high frequency voltage.
    Type: Grant
    Filed: October 26, 2022
    Date of Patent: July 2, 2024
    Assignee: Tokyo Electron Limited
    Inventors: Shinya Iwashita, Ayuta Suzuki, Takahiro Shindo, Kazuki Dempoh, Tatsuo Matsudo, Yasushi Morita, Takamichi Kikuchi, Tsuyoshi Moriya
  • Patent number: 12027349
    Abstract: A plasma processing apparatus is provided. The plasma processing apparatus comprises: a dielectric member having a placement surface on which an object to be processed is placed and a back surface opposite to the placement surface, and having a first through-hole penetrating through the placement surface and the back surface; a mounting table having a support surface for supporting the dielectric member and a base having a second through-hole communicating with the first through-hole; and an embedded member disposed in the first through-hole and the second through-hole, wherein the embedded member includes a first embedded member disposed in the first through-hole and a second embedded member disposed in the second through-hole, and the rigidity of the second embedded member is lower than the rigidity of the first embedded member.
    Type: Grant
    Filed: December 13, 2021
    Date of Patent: July 2, 2024
    Assignee: TOKYO ELECTRON LIMITED
    Inventor: Shinsuke Oka
  • Patent number: 12027384
    Abstract: A heat treatment apparatus for applying a heat treatment to a plurality of substrates including a product substrate and a dummy substrate includes: a process container configured to accommodate the plurality of substrates; a storage container provided outside the process container and configured to store the dummy substrate; and an oxidation mechanism configured to oxidize the dummy substrate stored in the storage container.
    Type: Grant
    Filed: October 8, 2021
    Date of Patent: July 2, 2024
    Assignee: Tokyo Electron Limited
    Inventors: Yutaka Motoyama, Yoshihiro Takezawa
  • Patent number: 12027346
    Abstract: A substrate processing apparatus includes a chamber including a processing room for processing of a substrate using an introduced gas and an exhaust room for exhausting the gas in the processing room, a shield member provided near a side wall of the chamber to separate the processing room and the exhaust room and including a hole allowing the processing room and the exhaust room to communicate with each other, the shield member being driven in a vertical direction, and a hollow relay member connected to a pipe connected to an instrument outside the chamber and configured to be driven in a horizontal direction. When the shield member reaches an upper position, the relay member is driven inwardly of the chamber to be connected to the shield member at its inward end to allow the processing room and the pipe to communicate with each other through the hole.
    Type: Grant
    Filed: July 27, 2021
    Date of Patent: July 2, 2024
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Nobutaka Sasaki, Shin Matsuura
  • Patent number: 12027353
    Abstract: There is provided a substrate processing method of a substrate processing apparatus. The substrate processing apparatus includes at least two targets, magnet-moving mechanisms disposed in one-to-one correspondence with the at least two targets, each of the magnet-moving mechanisms being configured to reciprocate a magnet in a first direction on a back surface of each target, and a substrate moving mechanism configured to move a substrate in a second direction orthogonal to the first direction. The method includes causing the magnet-moving mechanisms to reciprocate the magnets at different phases with each other.
    Type: Grant
    Filed: March 19, 2021
    Date of Patent: July 2, 2024
    Assignee: Tokyo Electron Limited
    Inventors: Shota Ishibashi, Hiroyuki Toshima, Hiroyuki Iwashita, Tatsuo Hirasawa
  • Publication number: 20240213031
    Abstract: An etching method includes (a) providing a substrate including a first region and a second region below the first region, the first region containing a first material and including an opening, the second region containing a second material different from the first material, the second material containing silicon; (b) forming a metal-containing deposition on the first region by using first plasma generated from a first process gas containing halogen, metal, and at least one of carbon or hydrogen; and (c) after (b), etching the second region via the opening by using second plasma generated from a second process gas different from the first process gas.
    Type: Application
    Filed: December 26, 2023
    Publication date: June 27, 2024
    Applicant: Tokyo Electron Limited
    Inventors: Atsuki HASHIMOTO, Sho SAITOH, Yoshimitsu KON
  • Publication number: 20240212979
    Abstract: A method includes (a) generating plasma in a chamber in a plasma processing apparatus. The plasma processing apparatus includes a substrate support in the chamber. The substrate support includes a first portion to support a substrate and a second portion to support an edge ring. The first portion includes a first electrode, and the second portion includes a second electrode. The method further includes (b) cyclically applying, to draw ions from the plasma to the substrate support, a pulse of a voltage to the first electrode and the second electrode. The method further includes (c) determining an amount of wear of the edge ring based on a first voltage value of the first electrode and a second voltage value of the second electrode measured when the pulse of the voltage is applied to the first electrode and the second electrode.
    Type: Application
    Filed: March 7, 2024
    Publication date: June 27, 2024
    Applicant: Tokyo Electron Limited
    Inventors: Ikko TANAKA, Atsushi TERASAWA
  • Publication number: 20240213000
    Abstract: A processing method for performing plasma processing on a substrate includes placing a temperature adjustment target onto a support surface of a substrate support in a decompressible processing, forming a heat transfer layer by supplying, through the substrate support, a heat transfer medium including at least one of a liquid medium or a solid medium with fluidity to between the support surface of the substrate support and a back surface of the temperature adjustment target, performing plasma processing on the substrate on the support surface on which the heat transfer layer is formed, and separating the temperature adjustment target from the support surface after the plasma processing.
    Type: Application
    Filed: January 25, 2024
    Publication date: June 27, 2024
    Applicant: Tokyo Electron Limited
    Inventors: Kazuya NAGASEKI, Kazuki MOYAMA, Shinji HIMORI, Masanobu HONDA, Satoru TERUUCHI
  • Publication number: 20240212987
    Abstract: A gas supply system includes: gas supply flow paths for independently supplying gas to a processing chamber; a flow rate controller arranged in each gas supply flow path; a primary-side valve arranged on an upstream side of the flow rate controller; a primary-side gas exhaust flow path branched between the primary-side valve and the flow rate controller; a primary-side exhaust valve arranged in the primary-side gas exhaust flow path; a secondary-side valve arranged on a downstream side of the flow rate controller; a secondary-side gas exhaust flow path branched between the secondary-side valve and the flow rate controller; and a secondary-side exhaust valve arranged in the secondary-side gas exhaust flow path. The flow rate controller includes: a control valve connected to the primary-side valve and the secondary-side valve; and a control-side orifice arranged between the control valve and the secondary-side valve.
    Type: Application
    Filed: February 6, 2024
    Publication date: June 27, 2024
    Applicant: Tokyo Electron Limited
    Inventors: Atsushi SAWACHI, Kota ISHIHARADA, Hideaki YAKUSHIJI, Yoshiyasu SATO, Shinya MORIKITA, Shota YOSHIMURA, Toshihiro TSURUTA, Kazuaki TAKAAI
  • Publication number: 20240213032
    Abstract: An etching method includes (a) providing a substrate having an etching target film and a mask on the etching target film, on a substrate support within a chamber; (b) etching the etching target film to form a recess under a condition that a pressure within the chamber is controlled to a first pressure, and a temperature of the substrate support is controlled to a first temperature; and (c) forming a metal-containing film on a portion of a side wall of the recess by using plasma generated from a processing gas containing a metal-containing gas, under a condition that the pressure within the chamber is controlled to a second pressure higher than the first pressure, and the temperature of the substrate support is controlled to a second temperature equal to or less than the first temperature.
    Type: Application
    Filed: December 26, 2023
    Publication date: June 27, 2024
    Applicant: Tokyo Electron Limited
    Inventors: Koki MUKAIYAMA, Takuya SAWANO
  • Publication number: 20240207882
    Abstract: A film forming apparatus is disclosed. The apparatus comprises a chamber; an exhaust unit configured to reduce the pressure in the chamber to a predetermined vacuum level; a holder disposed in the chamber and configured to hold a film forming target member on which a film is to be formed; a supply unit configured to supply a film forming material containing silicon to a surface of the film forming target member; and a heat source configured to perform heating at the predetermined vacuum level to melt the supplied film forming material.
    Type: Application
    Filed: January 23, 2024
    Publication date: June 27, 2024
    Applicant: Tokyo Electron Limited
    Inventors: Takayuki ISHII, Kazuya NAGASEKI, Michishige SAITO
  • Publication number: 20240213057
    Abstract: A transfer apparatus includes a first vacuum transfer module; a first transfer robot disposed in the first vacuum transfer module and at least one ring. In addition, a second vacuum transfer module is provided; and a second transfer robot is disposed in the second vacuum transfer module. A tubular connecting module is disposed between the first vacuum transfer module and the second vacuum transfer module. Further, the first vacuum transfer module, the second vacuum transfer module and the tubular connecting module are arranged along a first direction, with the tubular connecting module having a first length in the first direction, and the first length is smaller than the diameter of the wafer. A wafer support is rotatably attached to the tubular connecting module and at least three ring supporting members outwardly extend from the wafer support to support the at least one ring.
    Type: Application
    Filed: March 11, 2024
    Publication date: June 27, 2024
    Applicant: Tokyo Electron Limited
    Inventors: Masahiro DOGOME, Masatomo KITA
  • Publication number: 20240212996
    Abstract: A magnetic field in an outer peripheral portion of a substrate is controlled while protecting an adhesive layer of a substrate support. Provided is the substrate support including: a base; an electrostatic chuck provided on the base and having a substrate support surface for supporting a substrate; an adhesive layer provided between the base and the electrostatic chuck and configured to bond the base to the electrostatic chuck; and a protective member including a main body surrounding an outer periphery of the adhesive layer and configured to protect the adhesive layer, and a magnetic field generator provided in the main body and configured to generate a magnetic field in an outer peripheral portion of the substrate and around the substrate.
    Type: Application
    Filed: December 21, 2023
    Publication date: June 27, 2024
    Applicant: Tokyo Electron Limited
    Inventors: Toshiyuki ARAKANE, Hikaru KIKUCHI, Naoyuki SATOH, Shu KUSANO