Patents Assigned to Tokyo Electron Limited
  • Publication number: 20200211885
    Abstract: A substrate placing table according to an exemplary embodiment includes a base and an electrostatic chuck provided on the base. The electrostatic chuck includes a lamination layer portion, an intermediate layer, and a covering layer. The lamination layer portion is provided on the base. The intermediate layer is provided on the lamination layer portion. The covering layer is provided on the intermediate layer. The lamination layer portion includes a first layer, an electrode layer, and a second layer. The first layer is provided on the base. The electrode layer is provided on the first layer. The second layer is provided on the electrode layer. The intermediate layer is provided between the second layer and the covering layer and is in close contact with the second layer and the covering layer. The second layer is a resin layer. The covering layer is ceramics.
    Type: Application
    Filed: December 19, 2019
    Publication date: July 2, 2020
    Applicant: Tokyo Electron Limited
    Inventors: Satoshi TAGA, Naoyuki SATOH, Tatsuo NISHITA
  • Publication number: 20200211892
    Abstract: A mounting table is provided. The mounting table includes a base having a first flow path, a recess, and a second flow path connected to the recess, and a variable control mechanism configured to variably control a contact area between a target object disposed on the base and a mounting surface for mounting thereon the target object by filling and discharging fluid into and from the recess through the second flow path.
    Type: Application
    Filed: December 27, 2019
    Publication date: July 2, 2020
    Applicant: TOKYO ELECTRON LIMITED
    Inventor: Masakatsu KASHIWAZAKI
  • Publication number: 20200211823
    Abstract: A plasma processing apparatus includes: a processing container; an electrode that places a substrate thereon within the processing container; a plasma generation source that supplies plasma into the processing container; a bias power supply that supplies bias power to the electrode; a part exposed to the plasma in the processing container; a DC power supply that supplies a DC voltage to the part; a controller that executes a process including a first control procedure in which a first state in which the DC voltage has a first voltage value and a second state in which the DC voltage has a second voltage value higher than the first voltage value are periodically repeated, and the first voltage value is applied in a partial period in each cycle of a potential of the electrode, and the second voltage value is applied such that the first state and the second state are continuous.
    Type: Application
    Filed: December 27, 2019
    Publication date: July 2, 2020
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Ryuji HISATOMI, Chishio KOSHIMIZU, Michishige SAITO
  • Publication number: 20200211867
    Abstract: A plasma processing apparatus includes a storage; processors; a liquid supply which supplies, into the storage, at least a first liquid composed of a processing liquid or source liquids for composing the processing liquid; a detector which detects a value of a parameter indicating a state of the first liquid supplied into the storage or a state of the processing liquid in the storage; and a controller which controls the processors to perform a liquid processing in sequence. The controller determines, based on a detection result of the value of the parameter, whether it is possible to supply the processing liquid continuously into a preset number of processors concurrently under a condition requested by the processors, and, if not, the controller performs a simultaneous processing restricting control of reducing a number of processors which are supposed to perform the liquid processing concurrently to be lower than the preset number.
    Type: Application
    Filed: December 27, 2019
    Publication date: July 2, 2020
    Applicant: Tokyo Electron Limited
    Inventors: Tomiyasu Maezono, Sadamichi Mori, Kouji Takuma, Chikara Nobukuni, Keigo Satake, Shinji Sugahara, Masahiro Yoshida
  • Publication number: 20200211886
    Abstract: In a measurement method, a terminal is brought into contact with an electrode in an electrostatic chuck in contact with a substrate that is grounded. Further, the terminal, the electrostatic chuck and the substrate are fixed, and a current value and a voltage value are measured using an ammeter and a voltmeter, respectively, that are connected to the terminal. In addition, whether or not the terminal and the electrode are electrically connected is determined from a slope of the current value and/or a peak current value based on the measured current value and the voltage value.
    Type: Application
    Filed: December 27, 2019
    Publication date: July 2, 2020
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Ryusei KASHIMURA, Masanori SATO, Tetsu TSUNAMOTO
  • Patent number: 10699919
    Abstract: A coating processing apparatus includes: a substrate holding part for horizontally holding a substrate and configured to rotate around a vertical axis; a coating liquid supply part for supplying a coating liquid onto the substrate; a cup body surrounding the substrate; an annular exhaust path formed along a circumferential direction of the cup body between an inner peripheral surface of the cup body and an inner member installed inside the cup body; a coating liquid collecting member installed to cover the exhaust path and having an opening, and configured to collect the coating liquid scattering from the substrate; at least one solvent storage portion formed in the coating liquid collecting member and configured to store a first solvent for dissolving the coating liquid collected in the coating liquid collecting member; and a solvent supply part for supplying the first solvent to the at least one solvent storage portion.
    Type: Grant
    Filed: August 24, 2018
    Date of Patent: June 30, 2020
    Assignee: TOKYO ELECTRON LIMITED
    Inventor: Ryoichi Uemura
  • Patent number: 10700166
    Abstract: A nozzle cleaning device is capable of uniformly cleaning a nozzle from a front end of the nozzle to an upper part thereof. The nozzle cleaning device includes a storage tank, a liquid discharging portion and an overflow discharging portion. The storage tank has a cylindrical inner peripheral surface and is configured to store therein a cleaning liquid that cleans a nozzle used in a substrate process. The liquid discharging portion is configured to discharge the cleaning liquid into the storage tank toward a position eccentric with respect to a central axis of the cylindrical inner peripheral surface to store the cleaning liquid within the storage tank and configured to form a vortex flow of the cleaning liquid revolving within the storage tank. The overflow discharging portion is configured to discharge the cleaning liquid that overflows the storage tank.
    Type: Grant
    Filed: May 29, 2013
    Date of Patent: June 30, 2020
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Yoshihiro Kai, Shinya Ishikawa, Yuji Kamikawa, Shuichi Nagamine, Naoki Shindo
  • Patent number: 10699911
    Abstract: Plasma processing methods that provide for conformal etching of silicon nitride while also providing selectivity to another layer are described. In one embodiment, an etch is provided that utilizes gases which include fluorine, nitrogen, and oxygen, for example a gas mixture of SF6, N2 and O2 gases. Specifically, a plasma etch utilizing SF6, N2 and O2 gases at high pressure with no bias is provided. The process accelerates silicon nitride etching by chemical reactions of [NO]x molecules from the plasma and [N] atoms from silicon nitride film. The etch provides a conformal (isotropic) etch that is selective to other materials such as silicon and silicon oxides (for example, but not limited to, silicon dioxide).
    Type: Grant
    Filed: November 1, 2018
    Date of Patent: June 30, 2020
    Assignee: Tokyo Electron Limited
    Inventors: Erdinc Karakas, Sonam D. Sherpa, Alok Ranjan
  • Patent number: 10699883
    Abstract: A plasma processing apparatus according to an embodiment includes a processing container, a mounting table, a plurality of heaters, and a power supply device. The mounting table is provided in the processing container. The plurality of heaters are provided in the mounting table. The power supply device supplies electric power to the plurality of heaters. The power supply device includes a plurality of transformers and a plurality of zero-cross control type solid state relays (SSRs). The plurality of transformers are configured to step down a voltage from an alternating-current power source. Each of the plurality of transformers includes a primary coil and a secondary coil. The primary coil is connected to the alternating-current power source. Each of the plurality of SSRs is provided between one corresponding heater among the plurality of heaters and the secondary coil of one corresponding transformer among the plurality of transformers.
    Type: Grant
    Filed: June 1, 2015
    Date of Patent: June 30, 2020
    Assignee: TOKYO ELECTRON LIMITED
    Inventor: Satoru Teruuchi
  • Patent number: 10700009
    Abstract: A method is provided for void-free Ru metal filling of features in a substrate. The method includes providing a substrate containing features, depositing a Ru metal layer in the features, removing the Ru metal layer from a field area around an opening of the features, and depositing additional Ru metal in the features, where the additional Ru metal is deposited in the features at a higher rate than on the field area. According to one embodiment, the additional Ru metal is deposited until the features are fully filled with Ru metal.
    Type: Grant
    Filed: October 1, 2018
    Date of Patent: June 30, 2020
    Assignee: Tokyo Electron Limited
    Inventors: Kai-Hung Yu, Nicholas Joy, Eric Chih Fang Liu, David L. O'Meara, David Rosenthal, Masanobu Igeta, Cory Wajda, Gerrit J. Leusink
  • Patent number: 10699910
    Abstract: A substrate liquid treatment method in one embodiment includes, storing a phosphoric acid solution in a processing bath provided in a liquid treatment unit, and immersing a substrate into the stored phosphoric acid solution to process the substrate, draining a phosphoric acid solution at a first drainage flow rate from the liquid treatment unit, and supplying a phosphoric acid solution to the liquid treatment unit, in a first time period in which the substrate is immersed in the phosphoric acid solution in the processing bath, and draining a phosphoric acid solution at a second drainage flow rate different from the first drainage flow rate, from the liquid treatment unit, and supplying a phosphoric acid solution to the liquid treatment unit, in a second time period in which the substrate is immersed in the phosphoric acid solution in the processing bath.
    Type: Grant
    Filed: October 3, 2017
    Date of Patent: June 30, 2020
    Assignee: Tokyo Electron Limited
    Inventor: Hideaki Sato
  • Patent number: 10700006
    Abstract: There is provided a method for manufacturing Ni wiring. The method includes forming an Ni film on a surface of a substrate having a recess formed thereon by CVD or ALD by using an Ni compound as a film forming material and NH3 gas and H2 gas as reduction gases to partially fill the recess. The method further includes annealing the substrate to make the Ni film on the surface of the substrate and on a side surface of the recess reflow into the recess.
    Type: Grant
    Filed: September 25, 2017
    Date of Patent: June 30, 2020
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Hiroaki Kawasaki, Takashi Matsumoto, Hiroyuki Nagai, Ryota Ifuku
  • Publication number: 20200203129
    Abstract: In a plasma processing apparatus according to an embodiment, a first radio-frequency power supply is connected to a lower electrode of a substrate support provided within a chamber via a first matcher. The first radio-frequency power supply supplies first radio-frequency power for bias to the lower electrode. The second radio-frequency power supply is connected to a load via a second matcher. The second radio-frequency power supply supplies second radio-frequency power for plasma generation. A controller of the second matcher sets an impedance of a matching circuit of the second matcher such that a reflection from the load of the second radio-frequency power supply is reduced in a designated partial period within each cycle of the first radio-frequency power.
    Type: Application
    Filed: December 18, 2019
    Publication date: June 25, 2020
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Chishio Koshimizu, Takashi Dokan, Shinji Kubota
  • Publication number: 20200199529
    Abstract: The present disclosure provides a method for determining the undifferentiated state of pluripotent stem cells, comprising: irradiating a test culture medium in which pluripotent stem cells are cultured with wavelength light having a wavelength in the range of 190 nm to 2,500 nm or a partial range thereof; detecting the reflected light, transmitted light or transmitted reflected light thereof to obtain absorbance spectrum data; and analyzing the absorbance at all or part of the measurement wavelengths in the absorbance spectrum data to determine the undifferentiated state of the pluripotent stem cells.
    Type: Application
    Filed: February 7, 2020
    Publication date: June 25, 2020
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Yusuke YODA, Kunitada HATABAYASHI, Kenichi KAGAWA
  • Patent number: 10692744
    Abstract: In one embodiment, a vaporizer is connected to a chamber of a substrate processing apparatus through a gas supply line and a gas introduction port. An exhaust device is connected to the gas supply line. The substrate processing apparatus includes a pressure sensor that obtains a measurement value of a pressure of the gas supply line. A method according to the embodiment includes supplying a processing gas to the chamber from the vaporizer through the gas supply line, and monitoring a change of the measurement value obtained by the pressure sensor in a state in which supply of the processing gas to the gas supply line is stopped.
    Type: Grant
    Filed: June 18, 2018
    Date of Patent: June 23, 2020
    Assignee: TOKYO ELECTRON LIMITED
    Inventor: Risako Miyoshi
  • Patent number: 10692782
    Abstract: Provided is a control device for controlling an operation of a substrate processing apparatus that forms a predetermined film on a substrate and operations of a plurality of measurement devices that measure a characteristic of the predetermined film. The control device includes: an individual difference information storing unit that stores individual difference information representing a relationship between information allocated to each of the plurality of measurement devices to specify each measurement device and an individual difference of the measurement device; and a controller that corrects a measurement value of the characteristic of the predetermined film measured by the measurement device based on information specifying the measurement device that has measured the characteristic of the predetermined film and the individual difference information stored in the individual difference information storing unit.
    Type: Grant
    Filed: March 16, 2017
    Date of Patent: June 23, 2020
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Yuichi Takenaga, Takahito Kasai, Yozo Nagata
  • Patent number: 10689759
    Abstract: A film forming apparatus includes a rotation shaft which is connected to a rotation stage. The rotation stage is accommodated in an inner space of a susceptor, holds a plurality of workpieces, and rotates the workpieces around the central axis. A gas flow along a direction orthogonal to the central axis from an outside of the rotation stage is formed in the susceptor. A wall portion of the susceptor facing a lower surface of the rotation stage includes an intermediate area defined by a first circle larger than a minimum distance between the central axis and the plurality of placing areas and a second circle smaller than a maximum distance between the central axis and the plurality of placing areas. One or more of through holes are formed in the intermediate area.
    Type: Grant
    Filed: November 8, 2018
    Date of Patent: June 23, 2020
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Masayuki Harashima, Hirokatsu Kobayashi
  • Patent number: 10692729
    Abstract: An etching process method is provided that includes outputting a first high frequency power from a first high frequency power supply in a cryogenic temperature environment where the temperature of a substrate is controlled to be less than or equal to ?35° C., supplying a sulfur fluoride-containing gas and a hydrogen-containing gas, generating a plasma from the supplied sulfur fluoride-containing gas and hydrogen-containing gas, and etching a laminated film made up of laminated layers of silicon-containing films having different compositions with the generated plasma.
    Type: Grant
    Filed: June 16, 2017
    Date of Patent: June 23, 2020
    Assignee: Tokyo Electron Limited
    Inventors: Jin Kudo, Wataru Takayama, Maju Tomura
  • Patent number: 10689762
    Abstract: A substrate processing apparatus can suppress particle generation on a substrate, and can reduce a consumption amount of a processing liquid. A substrate processing apparatus 1 includes a processing chamber 30 having a processing space 31 in which a substrate W is processed; a vaporizing tank 60, configured to store the processing liquid therein, having a vaporization space 61 in which the stored processing liquid is allowed to be vaporized; a decompression driving unit 70 configured to decompress the vaporization space 61; and a control unit 18. The control unit 18 vaporizes the processing liquid into the processing gas by decompressing the vaporization space 61 without through the processing space 31, and then, vaporizes the processing liquid into the processing gas by decompressing the vaporization space 61 through the processing space 31, and supplies an inert gas into the vaporization space 61.
    Type: Grant
    Filed: June 28, 2017
    Date of Patent: June 23, 2020
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Akira Murata, Satoshi Kaneko, Kazuki Motomatsu, Kazunori Sakamoto
  • Patent number: 10692705
    Abstract: An advanced optical sensor and method for detection of optical events in a plasma processing system. The method includes detecting at least one light emission signal in a plasma processing chamber. The at least one detected light emission signal including light emissions from an optical event. The method further includes processing the at least one light emission signal and detecting a signature of the optical event from the processed light emission signal.
    Type: Grant
    Filed: November 15, 2016
    Date of Patent: June 23, 2020
    Assignee: Tokyo Electron Limited
    Inventors: Mihail Mihaylov, Xinkang Tian, Ching-Ling Meng, Jason Ferns, Joel Ng, Badru D. Hyatt, Zheng Yan, Vi Vuong