Abstract: Disclosed is an electric rice cooker which includes a pot to hold rice and water, an inner case defining a heating space between the inner case and the outer peripheral and bottom surfaces of the pot, an outer case supporting the inner case, and at least one heater disposed in the heating space at a fixed distance from each of the pot and the inner case for heating air in the heating space to circulate the same by convection, thereby heating the pot and the rice and water in the pot from the upper portion.
Abstract: Disclosed is an electric rice cooker which comprises a pot to hold rice and water, an inner case defining a heating space between the inner case and the outer peripheral and bottom surfaces of the pot, an outer case supporting the inner case, and at least one heater disposed in the heating space at a fixed distance from each of the pot and the inner case for heating air in the heating space to circulate the same by convection, thereby heating the pot and the rice and water in the pot from the upper portion.
Abstract: A process tube that is impermeable to impurities for use in the manufacture of semiconductor devices. The process tube is made of sintered silicon carbide and it may optionally be infiltrated with elemental silicon. The inner surface of the process tube includes a layer of high density silicon carbide to prevent diffusion of impurity species through the walls of the process tube.
Abstract: The integrated injection logic semiconductor device comprises an N type semiconductor substrate, a P type semiconductor layer laminated on the N type semiconductor substrate, a first N type region extending through the P type semiconductor layer to reach the N type semiconductor substrate, a P type region formed in the first N type region and having a periphery along the outer periphery of the first N type region and a second N type region formed in the P type semiconductor layer. The integrated injection logic semiconductor device is constituted by a PNP lateral transistor utilizing the P type region, the first N type region and the P type semiconductor layer as the emitter, base and collector electrodes respectively, and a NPN vertical transistor utilizing the N type semiconductor substrate, P type semiconductor layer and the second N type region as the emitter, base and collector electrodes, respectively.
Abstract: An address conversion system comprises an improved associative memory circuit for providing a real address corresponding to an applied virtual address with reference to the correspondence between virtual and real addresses stored in a main memory. The associative memory includes first and second memories for storing a part of the correspondence between virtual and real addresses. The second memory is essentially a set associative memory but is not connected with address comparators directly. The first memory is higher in speed but smaller in capacity than the second memory. When the first memory stores the correspondence between the virtual and real address corresponding to the applied virtual address, the real address corresponding to the applied virtual address is immediately delivered.
June 21, 1982
Date of Patent:
June 5, 1984
Tokyo Shibaura Electric Co., Ltd., Nippon Electric Co., Ltd.
Abstract: A semiconductor wafer is provided having a plurality of projections along the dicing lines of the wafer surrounding each area on which an integrated circuit is formed, the projections being spaced apart.
Abstract: A recording and/or reproducing apparatus for an endless tape includes a stationary reel around which an endless tape is wound and which has a guide path formed over the inner and outer peripheral faces. The tape is led from the innermost side thereof through the guide path to a recording reproducing head and driving mechanism which are provided within the inner peripheral face of the reel and then wound up on the outermost periphery of the tape wound around the reel.
Abstract: A multi-processor system includes a plurality of processors, a common shared memory, and programmable memory access priority control circuit. The programmable memory access priority control circuits includes a programmable register circuit and a priority control circuit. The programmable register circuit stores priority information designating a memory access grade priority for each of the processors, wherein the priority information is changeable either manually, by external circuit or by at least one of the processors and remains fixed irrespective of access of the memory by any of the processors until being changed. The register circuit outputs priority information signals which indicate the memory access grade priority of each of the processors. The priority control circuit receives the priority information signals from the register means, receives a memory request signal from the processors requesting memory access (i.e.
Abstract: A light distributor comprising a plurality of optical fibers each having a tapered portion, said tapered portions of the optical fibers being thermally fused together to form a light mixing section where the cores of the fibers are packed together in a single cladding.
Abstract: A so-called buried channel type solid state image sensing device is formed with a channel layer of the opposite conductivity type in the surface of a semiconductor substrate. An insulating layer is formed on the surface of the semiconductor substrate and spaced apart photo-electrode and a charge transfer electrode are buried in the insulating film and a shift electrode is buried therebetween. A channel layer is provided beneath the photoelectrode and the charge transfer electrode whereas no channel layer is formed beneath the shift electrode. But instead a portion of the surface of the semiconductor substrate is located beneath the shift electrode. Since no channel layer is provided beneath the shift electrode, a sufficient quantity of charge carriers is accumulated in a potential well formed in the channel layer beneath the photoelectrode.
Abstract: An enclosed-type magnetic disc recording and/or reproducing apparatus according to this invention, having a pressure chamber to enclose a bearing unit of a flange rotating along with a magnetic disc, introduces an air pressure at a high-pressure portion, created by an air flow produced by rotation of the magnetic disc and the flange, into the pressure chamber so as to raise the pressure within the pressure chamber to a level higher than 1 atm., thereby preventing the lubricant evaporated from the bearing member from sticking to the magnetic disc or head to lower the faculty thereof.
Abstract: A method for producing a lithium tantalate single crystal comprises the steps of preparing a melt consisting essentially of lithium tantalate in a platinum-rhodium crucible including (20 to 35 weight percent of rhodium and 80 to 65 weight percent of platinum), and growing a lithium tantalate single crystal from the melt.
Abstract: An analog-digital converter designed to provide digital data by converting analog input voltage signals into pulse signals by a voltage-frequency converter, and counting said pulse signals by a counter, the improvement being that the A-D converter comprises a sequence controller which selectively supplies low-level or high-level input voltage signals to the A-D converter before analog input signals being measured are received therein.
Abstract: An information processing system of the microprogram control type having a control storage is provided with an exclusive memory unit for storing only the address information of a microprogram stored in the control storage and an exclusive control circuit for reading a specific microprogram out of the control storage by the address information from the exclusive memory unit and executing the program read out. The exclusive control circuit operates when the information processing unit is an idle state to execute successively the micro-steps of the specified microprogram read out in accordance with the address information in the exclusive memory unit, thereby to verify the information processing unit.
Abstract: The data-processing apparatus of this invention comprises a central processing unit (hereinafter referred to as the "CPU"), and a plurality of a groups of memory units in the CPU to be applied as a general register set. The groups of memory units are provided in a number which is equal to the number of interrupt programs and each group has been previously supplied with information on the individual interrupt programs (such information includes, for example, data on entry address, program status word, etc.). The present data-processing apparatus further has a general register-set pointer provided in the CPU. Where the general register set pointer is supplied with a particular numerical value, the corresponding one of the memory unit groups is selectively used as a general register set.
Abstract: A method of manufacturing a semiconductor device which comprises the step of applying a silicon carbide film having a prescribed perforated pattern as a masking film selectively to etch a silicon dioxide film or diffuse an impurity into a substrate.
Abstract: Ceramic powder material mainly consists of silicon nitride wherein the content of oxygen combined with generally unavoidable impurities as measured by activation analysis accounts for less than 2% by weight. The above-mentioned ceramic powder material can also be prepared preferably by the method which comprises the step of heating raw ceramic powder material mainly consisting of silicon nitride to 1,400.degree. C. to 1,900.degree. C. in the presence of a separately prepared nonsintered molding of ceramic material or sintered molding of ceramic material having a porosity of at least 10%.
Abstract: A temperature control system for liquid plant is comprised of liquid metal, plant members, heaters for heating these liquid metal and the plant members at respective control points, a temperature control unit and a control unit. The plant members include a vessel containing liquid metal, pipe lines through which the liquid metal circulates, and valves. Further, temperature sensors, a level detector for detecting the level of the liquid metal, and a meter for detecting the flow rate of the liquid metal, are mounted to the plant members. Temperature sensors produce output signals relating to the condition parameter of the plant which data is delivered via an interface to the temperature control system and the control unit, as the information at each control point. The control unit previously stores the operating schedule of the plant members and transfers, the input signal relating to the plant condition to the temperature control system, with reference to the temperature control schedule.
Abstract: A surface-treating agent formed of an aqueous solution containing 0.01 to 20% by weight of trialkyl(hydroxyalkyl) ammonium hydroxide. The treating agent is adapted to be used for the effective removal of organic and inorganic contaminants deposited on the surface of intermediate semiconductor products obtained in the respective steps of manufacturing a semiconductor device and the efficient etching of a metal layer used as wiring. Further, it can be used for the elimination of those portions of a positive working photoresist film coated on the surface of the intermediate semiconductor products which are and are not exposed to a light by controlling its concentration.