Abstract: A method of manufacturing a semiconductor device which comprises the step of applying a silicon carbide film having a prescribed perforated pattern as a masking film selectively to etch a silicon dioxide film or diffuse an impurity into a substrate.

Abstract: An electronic apparatus comprises a timer circuit driven for a given time in response to a key input, complementary MOS transistor clocked dynamic logic circuits each with an output storage capacitance, clock signal supply souce for supplying complementary clock signals to the clocked dynamic logic circuits during the operative period of the timer circuit, and for supplying voltages with fixed levels to the clocked logic circuits during the inoperative period of the timer circuit. During the inoperative period, the output capacitance of the clocked logic circuit is fixed at a fixed potential level. This prevents the simultaneous turning-on of the complementary transistors in a succeeding logic circuit connected to the clocked logic circuits, resulting in little power consumption even when a power switch is not used.