Abstract: Embodiments include an apparatus, system, and method related to a body-contacted partially depleted silicon on insulator (PDSOI) transistor that may be used in a switch circuit. In some embodiments, the switch circuit may include a discharge transistor to provide a discharge path for a body of a switch transistor. Other embodiments may be described and claimed.

Abstract: Embodiments of the present disclosure describe apparatuses, methods, and systems of an integrated circuit (IC) device. The IC device may include a buffer layer disposed on a substrate, the buffer layer including gallium (Ga) and nitrogen (N), a barrier layer disposed on the buffer layer, the barrier layer including aluminum (Al) and nitrogen (N), a regrown structure disposed in and epitaxially coupled with the barrier layer, the regrown structure including nitrogen (N) and at least one of aluminum (Al) or gallium (Ga) and being epitaxially deposited at a temperature less than or equal to 600° C., and a gate terminal disposed in the barrier layer, wherein the regrown structure is disposed between the gate terminal and the buffer layer. Other embodiments may be described and/or claimed.

Abstract: A bulk acoustic wave (BAW) resonator is constructed to reduce phase and amplitude ripples in a frequency response. The BAW resonator is fabricated on a substrate 400 ?m thick or less, preferably approximately 325 ?m, having a first side and a polished second side with a peak-to-peak roughness of approximately 1000 A. A Bragg mirror having alternate layers of a high acoustic impedance material, such as tungsten, and a low acoustic impedance material is fabricated on the first side of the substrate. A BAW resonator is fabricated on the Bragg mirror. A lossy material, such as epoxy, coats the second side of the substrate opposite the first side. The lossy material has an acoustic impedance in the range of 0.01× to 1.0× the acoustic impedance of the layers of high acoustic impedance material.

Abstract: An elastic guided acoustic wave coupling resonator filter includes a dielectric layer interposed between piezoelectric substrates, with interdigital transducers on each substrate generally positioned at an interface between the substrates and the dielectric layer. The interdigital transducers on one substrate are aligned with the transducers on the opposing substrate and include cascaded filter tracks. The cascaded orientation between the two filter tracks includes either a differential connection or a balanced connection. As a result, the interdigital transducers are electrically isolated yet acoustically coupled to each other.

Abstract: Various embodiments may provide a circuit including a radio frequency (RF) power amplifier (PA) and a coupler (e.g., a directional coupler). The coupler may be coupled between a first impedance matching section and a second impedance matching section. The first matching section may transform a first impedance at the RF PA to a second impedance at an RF input port of the coupler. The second matching section may transform the second impedance at an RF output port of the coupler to a third impedance at an output terminal. The second impedance may be a real impedance and the third impedance may be a complex impedance. A real part of the third impedance may be greater than a real part of the second impedance. Additionally, the second impedance may be greater than the first impedance.

Abstract: Embodiments of the present disclosure describe apparatuses, methods, and systems of an integrated circuit (IC) device. The IC device may include a buffer layer disposed on a substrate, the buffer layer including gallium (Ga) and nitrogen (N), a barrier layer disposed on the buffer layer, the barrier layer including aluminum (Al) and nitrogen (N), wherein the barrier layer includes an oxidized portion of the barrier layer, a gate dielectric disposed on the oxidized portion of the barrier layer, and a gate electrode disposed on the gate dielectric, wherein the oxidized portion of the barrier layer is disposed in a gate region between the gate electrode and the buffer layer.

Abstract: Embodiments of the present disclosure describe apparatuses, methods, and systems of a device such as a transistor. The device includes a buffer layer disposed on a substrate, the buffer layer being configured to serve as a channel of a transistor and including gallium (Ga) and nitrogen (N), a barrier layer disposed on the buffer layer, the barrier layer being configured to supply mobile charge carriers to the channel and including aluminum (Al), gallium (Ga), and nitrogen (N), a charge-inducing layer disposed on the barrier layer, the charge-inducing layer being configured to induce charge in the channel and including aluminum (Al) and nitrogen (N), and a gate terminal disposed in the charge-inducing layer and coupled with the barrier layer to control the channel. Other embodiments may also be described and/or claimed.

Abstract: Embodiments of the present disclosure describe apparatuses, methods, and systems of an integrated circuit (IC) device. The IC device may include a thermal spreader having graduated thermal expansion parameters. In some embodiments, the thermal spreader may have a first layer with a first coefficient of thermal expansion (CTE) and a second layer with a second CTE that is greater than the first CTE. Other embodiments may be described and/or claimed.

Abstract: Embodiments of apparatuses, methods, and systems for a radio frequency amplification circuit providing for fast loadline modulation are generally described herein. Other embodiments may be described and claimed.

Abstract: Embodiments include but are not limited to apparatuses and systems including a die package including a substrate, a die coupled with a top surface of the substrate, a package wall disposed on the top surface of the substrate and bounding the die, and a package lid coupled with the package wall, and including at least one protrusion facilitating a coupling of the package lid with the package wall. At least one edge of the top surface of the die pad may include an etched portion such that a width of the top surface is narrower than a width of the bottom surface. At least one edge of a top surface of at least one of the leads may include an etched portion such that a width of the top surface is narrower than a width of the bottom surface. Other embodiments may be described and claimed.

Abstract: Disclosed embodiments include a surface acoustic wave device having electrode period, electrode width, and/or ratio of electrode width to electrode period varied in a prescribed manner.

Abstract: Embodiments provide a multi-stage radio frequency (RF) power amplifier (PA) having a low dynamic error vector magnitude (EVM). A first stage of the RF PA may include a first active device configured to receive an enable signal and to turn on in response to the enable signal, thereby activating the first stage. The RF PA may further include a second active device coupled in series with the first active device and configured to receive a main supply voltage. The second active device may provide a first supply voltage across the first active device that is less than and independent of the main supply voltage. One of the first active device or the second active device may be configured to receive an RF input signal and to pass an amplified RF output signal to a second stage of the RF PA circuit.

Abstract: Embodiments provide a radio frequency (RF) switching apparatus including an RF switching device configured to receive an RF input signal and to pass an RF output signal if the RF switching device is activated. The RF switching apparatus may include a control terminal to receive a control signal to activate the RF switching device. A gate resistor may be coupled between the control terminal and a gate terminal of the RF switching device. A helper circuit may be coupled in parallel with the gate resistor. The helper circuit may be configured to provide a temporary conductive path between the control terminal and the gate terminal in response to a state transition of the control signal. The helper circuit may provide an open circuit between the control terminal and the gate terminal during a steady state of the control signal between state transitions.

Abstract: Apparatus and methods for limiting a radio frequency (RF) signal are disclosed. An example apparatus includes a detector configured to generate a detection signal based on a power of a RF signal on a signal path. A bias circuit may bias a switch circuit to dynamically limit the RF signal based on the detection signal.

Abstract: Embodiments of the present disclosure flip-chip packaging techniques and configurations. An apparatus may include a package substrate having a plurality of pads formed on the package substrate, the plurality of pads being configured to receive a corresponding plurality of interconnect structures formed on a die and a fluxing underfill material disposed on the package substrate, the fluxing underfill material comprising a fluxing agent configured to facilitate formation of solder bonds between individual interconnect structures of the plurality of interconnect structures and individual pads of the plurality of pads and an epoxy material configured to harden during formation of the solder bonds to mechanically strengthen the solder bonds. Other embodiments may also be described and/or claimed.

Abstract: A method of fabricating a piezoelectric resonator includes providing a bottom electrode and a piezoelectric layer coupled to the bottom electrode. A bottom metal layer of a top electrode is deposited on the piezoelectric layer. A top metal layer of the top electrode is deposited on the bottom metal layer. A photoresist layer is deposited on the top metal layer. The photoresist layer is patterned and etched. The top metal layer is patterned and etched while the etched photoresist layer remains. The bottom metal layer is patterned and etched such that an entire perimeter side surface of the top metal layer is recessed relative to a perimeter edge of the bottom metal layer. The etched photoresist layer is removed. A passivation layer is deposited on the top and bottom metal layers such that the top and bottom metal layers are isolated from a subsequent metal etch step.

Abstract: Embodiments of the present invention provide systems, devices and methods for improving both the bandwidth of a BAW resonator bandpass filter and the suppression of out-of-band frequencies above the passband. In various embodiments of the invention, blocker inductors are located in series between the filter input and the filter output to realize both bandwidth enhancement and improved out-of-band frequency rejection. For example, a first blocker inductor may be located at the input and a second blocker inductor may be located at the output of a BAW resonator bandpass filter.

Abstract: Methods of reducing phase and amplitude ripples in a BAW resonator frequency response by providing a substrate, fabricating a Bragg mirror having alternate layers of a high acoustic material and a low acoustic material on a first surface of the substrate, fabricating a BAW on the Bragg mirror, and coating a second side of the substrate opposite the first side with a lossy material having an acoustic impedance in the range of 0.01× to 1.0× the acoustic impedance of the layers of high impedance material, the second surface of the substrate being a polished surface. Various embodiments are disclosed.

Abstract: Embodiments of circuits, apparatuses, and systems for a lattice matching network are disclosed. Embodiments may include a power amplifier to provide single-ended amplification of a radio frequency signal. A lattice matching network may be coupled with the power amplifier and may transform a source impedance associated with an output of the power amplifier to a load impedance. In some embodiments, the lattice matching network may include first and second arms coupled in parallel between the power amplifier and an output node. The first arm may include a serial high-low network and the second arm may include a serial low-high network. The serial high-low network and the serial low-high network may provide a passband response with respect to the radio frequency signal. The serial high-low network and serial low-high network may include one or more Pi networks. Other embodiments may be described and claimed.

Abstract: Embodiments include but are not limited to apparatuses and systems including a microelectronic device including a die having a first surface and a second surface opposite the first surface, a conductive pillar formed on the first surface of the die, and an encapsulant material encasing the die, including covering the first surface, the second surface, and at least a portion of a side surface of the conductive pillar. Methods for making the same also are described.