Patents Assigned to Ultratech, Inc.
  • Publication number: 20170194204
    Abstract: Through via holes are prepared for metallization using ALD and PEALD processing. Each via is coated with a titanium nitride barrier layer having a thickness ranging from 20 to 200 ?. A ruthenium sealing layer is formed over the titanium nitride barrier layer wherein the sealing layer is formed without oxygen to prevent oxidation of the titanium nitride barrier layer. A ruthenium nucleation layer is formed over the sealing layer wherein the nucleation layer is formed with oxygen in order to oxidize carbon during the application of the Ru nucleation layer. The sealing layer is formed by a PEALD method using plasma excited nitrogen radicals instead of oxygen.
    Type: Application
    Filed: August 27, 2014
    Publication date: July 6, 2017
    Applicant: Ultratech, Inc.
    Inventor: Mark Sowa
  • Patent number: 9691613
    Abstract: Method and devices are disclosed for device manufacture of gallium nitride devices by growing a gallium nitride layer on a silicon substrate using Atomic Layer Deposition (ALD) followed by rapid thermal annealing. Gallium nitride is grown directly on silicon or on a barrier layer of aluminum nitride grown on the silicon substrate. One or both layers are thermally processed by rapid thermal annealing. Preferably the ALD process use a reaction temperature below 550° C. and preferable below 350° C. The rapid thermal annealing step raises the temperature of the coating surface to a temperature ranging from 550 to 1500° C. for less than 12 msec.
    Type: Grant
    Filed: June 25, 2014
    Date of Patent: June 27, 2017
    Assignee: Ultratech, Inc.
    Inventors: Andrew M. Hawryluk, Ganesh Sundaram, Ritwik Bhatia
  • Publication number: 20170178980
    Abstract: Full-wafer inspection methods for a semiconductor wafer are disclosed. One method includes making a measurement of a select measurement parameter simultaneously over measurement sites of the entire surface of the semiconductor wafer at a maximum measurement-site pixel density ?max to obtain measurement data, wherein the total number of measurement-site pixels obtained at the maximum measurement-site pixel density ?max is between 104 and 108. The method also includes defining a plurality of zones of the surface of the semiconductor wafer, with each of the zones having a measurement-site pixel density ?, with at least two of the zones having a different sized measurement-site pixel and thus a different measurement-site pixel density ?. The method also includes processing the measurement data based on the plurality of zones and the corresponding measurement-site pixel densities ?.
    Type: Application
    Filed: November 30, 2016
    Publication date: June 22, 2017
    Applicant: Ultratech, Inc.
    Inventors: David M. Owen, Byoung-Ho Lee, Eric Bouche, Andrew M. Hawryluk
  • Publication number: 20170162392
    Abstract: High-efficiency line-forming optical systems and methods for defect annealing and dopant activation are disclosed. The system includes a CO2-based line-forming system configured to form at a wafer surface a first line image having between 2000 W and 3000 W of optical power. The line image is scanned over the wafer surface to locally raise the temperature up to a defect anneal temperature. The system can include a visible-wavelength diode-based line-forming system that forms a second line image that can scan with the first line image to locally raise the wafer surface temperature from the defect anneal temperature to a spike anneal temperature. Use of the visible wavelength for the spike annealing reduces adverse pattern effects and improves temperature uniformity and thus annealing uniformity.
    Type: Application
    Filed: February 20, 2017
    Publication date: June 8, 2017
    Applicant: Ultratech, Inc.
    Inventors: Andrew M. Hawryluk, Serguei Anikitchev
  • Publication number: 20170162456
    Abstract: Systems and methods of characterizing wafer shape using coherent gradient sensing (CGS) interferometry are disclosed. The method includes measuring at least 3×106 data points on a wafer surface using a CGS system to obtain a topography map of the wafer surface. The data are collected on a wafer for pre-processing and post-processing of the wafer, and the difference calculated to obtain a measurement of the effect of the process on wafer surface shape. The process steps for processing the same wafer or subsequent wafers are controlled based on measured process-induced change in the wafer surface shape in order to improve the quality of the wafer processing.
    Type: Application
    Filed: November 29, 2016
    Publication date: June 8, 2017
    Applicant: Ultratech, Inc.
    Inventor: David M. Owen
  • Patent number: 9666432
    Abstract: Atomic Layer Deposition (ALD) is used for heteroepitaxial film growth at reaction temperatures ranging from 80-400° C. The substrate and film materials are preferably selected to take advantage of Domain Matched Epitaxy (DME). A laser annealing system is used to thermally anneal deposition layers after deposition by ALD. In preferred embodiments a silicon substrate is overlaid with an AIN nucleation layer and laser annealed. Thereafter a GaN device layers is applied over the AIN layer by an ALD process and then laser annealed. In a further example embodiment a transition layer is applied between the GaN device layer and the AIN nucleation layer. The transition layer comprises one or more different transition material layers each comprising a AlxGa1-x compound wherein the composition of the transition layer is continuously varied from AIN to GaN.
    Type: Grant
    Filed: September 17, 2014
    Date of Patent: May 30, 2017
    Assignee: Ultratech, Inc.
    Inventors: Ganesh Sundaram, Andrew M. Hawryluk, Daniel Stearns
  • Publication number: 20170145564
    Abstract: An improved ALD system usable for low vapor pressure liquid and sold precursors. The ALD system includes a precursor container and inert gas delivery elements configured to increase precursor vapor pressure within a precursor container by injecting an inert gas pulse into the precursor container while a precursor pulse is being removed to the reaction chamber. A controllable inert gas flow valve and a flow restrictor are disposed along an inert gas input line leading into the precursor container below its fill level. A vapor space is provided above the fill level. An ALD pulse valve is disposed along a precursor vapor line extending between the vapor space and the reaction chamber. Both valves are pulsed simultaneously to synchronously remove precursor vapor from the vapor space and inject inert gas into the precursor container below the fill level.
    Type: Application
    Filed: January 22, 2015
    Publication date: May 25, 2017
    Applicant: Ultratech, Inc.
    Inventors: Adam Bertuch, Michael Ruffo
  • Patent number: 9638922
    Abstract: A line-forming optical system and method are disclosed that form a line image with high-efficiency. A method includes forming a laser beam having a first intensity profile with a Gaussian distribution in at least a first direction and passing at least 50% of the laser beam in the first direction to form a first transmitted light. The method also includes: focusing the first transmitted light at an intermediate image plane to define a second intensity profile having a central peak and first side peaks immediately adjacent the central peak; then truncating the second intensity profile within each of first side peaks to define a second transmitted light; and then forming the line image at an image plane from the second transmitted light.
    Type: Grant
    Filed: June 24, 2016
    Date of Patent: May 2, 2017
    Assignee: Ultratech, Inc.
    Inventor: Serguei Anikitchev
  • Publication number: 20170114451
    Abstract: Methods of forming an ALD-inhibiting layer using a layer of SAM molecules include providing a metalized substrate having a metal M and an oxide layer of the metal M. A reduction gas that includes a metal Q is used to reduce the oxide layer of the metal M, leaving a layer of form of M+MQyOx atop the metal M. The SAM molecules are provided as a vapor and form an ALD-inhibiting SAM layer on the M+MQyOx layer. Methods of performing S-ALD using the ALD-inhibiting SAM layer are also disclosed.
    Type: Application
    Filed: October 17, 2016
    Publication date: April 27, 2017
    Applicant: Ultratech, Inc.
    Inventor: Laurent Lecordier
  • Patent number: 9633850
    Abstract: Masking methods for atomic-layer-deposition processes for electrode-based devices are disclosed, wherein solder is used as a masking material. The methods include exposing electrical contact members of an electrical device having an active device region and a barrier layer formed by atomic layer deposition. This includes depositing solder elements on the electrical contact members, then forming the barrier layer using atomic layer deposition, wherein the barrier layer covers the active device region and also covers the solder elements that respectively cover the electrical contact members. The solder elements are then melted, which removes respective portions of the barrier layer covering the solder elements. Similar methods are employed for exposing contacts when forming layered capacitors.
    Type: Grant
    Filed: July 14, 2016
    Date of Patent: April 25, 2017
    Assignee: Ultratech, Inc.
    Inventor: Ritwik Bhatia
  • Patent number: 9613828
    Abstract: Laser annealing of a semiconductor wafers using a forming gas for localized control of ambient oxygen gas to reduce the amount of oxidization during laser annealing is disclosed. The forming gas includes hydrogen gas and an inert buffer gas such as nitrogen gas. The localized heating of the oxygen gas and the forming gas in the vicinity of the annealing location on the surface of the semiconductor wafer creates a localized region within which combustion of oxygen gas and hydrogen gas occurs to generate water vapor. This combustion reaction reduces the oxygen gas concentration within the localized region, thereby locally reducing the amount of ambient oxygen gas, which in turn reduces oxidation rate at the surface of the semiconductor wafer during the annealing process.
    Type: Grant
    Filed: May 18, 2015
    Date of Patent: April 4, 2017
    Assignee: Ultratech, Inc.
    Inventors: James McWhirter, Arthur W. Zafiropoulo
  • Patent number: 9613815
    Abstract: High-efficiency line-forming optical systems and methods for defect annealing and dopant activation are disclosed. The system includes a CO2-based line-forming system configured to form at a wafer surface a first line image having between 2000 W and 3000 W of optical power. The line image is scanned over the wafer surface to locally raise the temperature up to a defect anneal temperature. The system can include a visible-wavelength diode-based line-forming system that forms a second line image that can scan with the first line image to locally raise the wafer surface temperature from the defect anneal temperature to a spike anneal temperature. Use of the visible wavelength for the spike annealing reduces adverse pattern effects and improves temperature uniformity and thus annealing uniformity.
    Type: Grant
    Filed: October 30, 2015
    Date of Patent: April 4, 2017
    Assignee: Ultratech, Inc.
    Inventors: Andrew M. Hawryluk, Serguei Anikitchev
  • Publication number: 20170088952
    Abstract: ALD systems and methods having high throughput are disclosed. The ALD systems and methods employ a process chamber that has multiple chamber sections defined by interior chamber dividers. The wafers to be processed are supported on a platen that rotates beneath a process chamber housing with a small gap therebetween so that the wafers are moved between the chamber sections. The multiple chamber sections are pneumatically partitioned by the dividers and by pneumatic valves operably disposed therein and in pneumatic communication with the platen surface through the gap. Some chamber sections are used to perform an ALD process using process gasses, while other chamber sections are transition sections that include a purge gas. Some chamber sections can be employed to perform a laser process or a plasma process on the wafers passing therethrough.
    Type: Application
    Filed: September 20, 2016
    Publication date: March 30, 2017
    Applicant: Ultratech, Inc.
    Inventor: Andrew M. Hawryluk
  • Publication number: 20170073812
    Abstract: Methods of forming 2D metal chalcogenide films using laser-assisted atomic layer deposition are disclosed. A direct-growth method includes: adhering a layer of metal-bearing molecules to the surface of a heated substrate; then reacting the layer of metal-bearing molecules with a chalcogenide-bearing radicalized precursor gas delivered using a plasma to form an amorphous 2D film of the metal chalcogenide; then laser annealing the amorphous 2D film to form a crystalline 2D film of the metal chalcogenide, which can have the form MX or MX2, where M is a metal and X is the chalcogenide. An indirect growth method that includes forming an MO3 film is also disclosed.
    Type: Application
    Filed: September 6, 2016
    Publication date: March 16, 2017
    Applicant: Ultratech, Inc.
    Inventor: Ganesh Sundaram
  • Publication number: 20170062191
    Abstract: Systems and methods for coating particles using PE-ALD and a rotary reactor tube are disclosed. The reactor tube is part of a reactor tube assembly that can rotate and move axially so that it is operably disposed relative to a plasma-generating device. The plasma-generating device has an active state that generates a plasma from a precursor gas and an inactive state that passes the precursor gas without forming a plasma. The reactor tube resides in a chamber that has an open position for accessing the reactor tube and a closed position that supports a vacuum. An output end of the plasma-generating device resides immediately adjacent or within an input section of the reactor tube. This configuration avoids the need for an active portion of the plasma-generating device residing adjacent an outer surface of the reactor tube.
    Type: Application
    Filed: August 23, 2016
    Publication date: March 2, 2017
    Applicant: Ultratech, Inc.
    Inventors: Arthur W. Zafiropoulo, Andrew M. Hawryluk
  • Patent number: 9583337
    Abstract: A method of performing an oxygen radical enhanced atomic-layer deposition process on a surface of a substrate that resides within an interior of a reactor chamber is disclosed. The method includes forming an ozone plasma to generate oxygen radicals O*. The method also includes feeding the oxygen radicals and a precursor gas sequentially into the interior of the reactor chamber to form an oxide film on the substrate surface. A system for performing the oxygen radical enhanced atomic-layer deposition process is also disclosed.
    Type: Grant
    Filed: January 21, 2015
    Date of Patent: February 28, 2017
    Assignee: Ultratech, Inc.
    Inventor: Arthur W. Zafiropoulo
  • Patent number: 9567670
    Abstract: An ALD coating method to provide a coating surface on a substrate is provided. The ALD coating method comprises: providing a deposition heading including a unit cell having a first precursor nozzle assembly and a second precursor nozzle assembly; emitting a first precursor from the first precursor nozzle assembly into chamber under atmospheric conditions in a direction substantially normal to the coating surface; emitting a second precursor from the first precursor nozzle assembly into chamber under atmospheric conditions in a direction substantially normal to the coating surface; removing moving the substrate under the deposition head such that the first precursor is directed onto a first area of the coating surface prior to the second precursor being directed onto the first area of the coating surface.
    Type: Grant
    Filed: December 29, 2014
    Date of Patent: February 14, 2017
    Assignee: Ultratech, Inc.
    Inventors: Michael J. Sershen, Ganesh M. Sundaram, Roger R. Coutu, Jill Svenja Becker, Mark J. Dalberth
  • Patent number: 9559023
    Abstract: Systems and methods for reducing beam instability in laser annealing are disclosed. The method includes: directing a conditioned laser beam through an opening in an aperture using a beam-redirecting element; forming a line image on the surface of the semiconductor wafer by imaging the aperture onto the surface, thereby locally heating the surface to form an annealing temperature distribution; detecting a thermal emission from the locally heated wafer surface; determining the annealing temperature distribution from the detected thermal emission; determining from the annealing temperature distribution a line-image intensity profile that includes a time-varying amount of slope; and adjusting the beam-redirecting element to redirect the laser beam to reduce or eliminate the time-varying amount of slope in the line-image intensity profile.
    Type: Grant
    Filed: June 23, 2014
    Date of Patent: January 31, 2017
    Assignee: Ultratech, Inc.
    Inventors: James T. McWhirter, Andrew Hawryluk, Serguei Anikitichev, Masoud Safa
  • Patent number: 9556519
    Abstract: Vapor deposition systems and methods associated with the same are provided. The systems may be designed to include features that can promote high quality deposition; simplify manufacture, modification and use; as well as, reduce the footprint of the system, amongst other advantages.
    Type: Grant
    Filed: November 27, 2011
    Date of Patent: January 31, 2017
    Assignee: ULTRATECH INC.
    Inventors: Douwe Johannes Monsma, Jill Svenja Becker
  • Patent number: 9558973
    Abstract: Laser annealing systems and methods for annealing a semiconductor wafer with ultra-short dwell times are disclosed. The laser annealing systems can include one or two laser beams that at least partially overlap. One of the laser beams is a pre-heat laser beam and the other laser beam is the annealing laser beam. The annealing laser beam scans sufficiently fast so that the dwell time is in the range from about 1 ?s to about 100 ?s. These ultra-short dwell times are useful for annealing product wafers formed from thin device wafers because they prevent the device side of the device wafer from being damaged by heating during the annealing process. Embodiments of single-laser-beam annealing systems and methods are also disclosed.
    Type: Grant
    Filed: September 18, 2014
    Date of Patent: January 31, 2017
    Assignee: Ultratech, Inc.
    Inventors: Andrew M. Hawryluk, Serguel Anikitchev