Abstract: In the method, a sidewall pattern is formed in a side wall of a first resist pattern that is formed on a second hard mask layer of a base material in which first and second hard mask layers are laminated in the order of description, a second hard mask pattern is formed by etching the second hard mask layer by using the sidewall pattern as a mask, a first hard mask pattern is formed by etching the first hard mask layer by using, as a mask, the second hard mask pattern and a second resist pattern that is formed on the first hard mask layer of the base material, and the first and second fine patterns are formed by etching the base material by using the first hard mask pattern as a mask.

Abstract: Apparatus for nanofabrication on an unconventional substrate including a patterned pliable membrane mechanically coupled to a membrane support structure, a substrate support structure to receive a substrate for processing, and an actuator to adjust the distance between the pliable membrane and the substrate. Nanofabrication on conventional and unconventional substrates can be achieved by transferring a pre-formed patterned pliable membrane onto the substrate using a transfer probe or non-stick sheet, followed by irradiating the substrate through the patterned pliable membrane so as to transfer the pattern on the pliable membrane into or out of the substrate. The apparatus and methods allow fabrication of diamond photonic crystals, fiber-integrated photonic devices and Nitrogen Vacancy (NV) centers in diamonds.

Abstract: A method of processing a target object includes (a) exposing a resist mask to active species of hydrogen generated by exciting plasma of a hydrogen-containing gas within a processing vessel while the target object is mounted on a mounting table provided in the processing vessel; and (b) etching a hard mask layer by exciting plasma of an etchant gas within the processing vessel after the exposing of the resist mask to the active species of hydrogen. The plasma is excited by applying of a high frequency power for plasma excitation to an upper electrode. In the method, a distance between the upper electrode and the mounting table in the etching of the hard mask layer ((b) process) is set to be larger than a distance between the upper electrode and the mounting table in the exposing of the resist mask to the active species of hydrogen ((a) process).

Abstract: A method of removing an amorphous silicon/silicon oxide film stack from vias is described. The method may involve a remote plasma comprising fluorine and a local plasma comprising fluorine and a nitrogen-and-hydrogen-containing precursor unexcited in the remote plasma to remove the silicon oxide. The method may then involve a local plasma of inert species to potentially remove any thin carbon layer (leftover from the photoresist) and to treat the amorphous silicon layer in preparation for removal. The method may then involve removal of the treated amorphous silicon layer with several options possibly within the same substrate processing region. The bottom of the vias may then possess exposed single crystal silicon which is conducive to epitaxial single crystal silicon film growth. The methods presented herein may be particularly well suited for 3d NAND (e.g. VNAND) device formation.

Abstract: A chemical-mechanical polishing composition includes colloidal silica abrasive particles having a chemical compound incorporated therein. The chemical compound may include a nitrogen-containing compound such as an aminosilane or a phosphorus-containing compound. Methods for employing such compositions include applying the composition to a semiconductor substrate to remove at least a portion of a layer.

Abstract: A chemical-mechanical polishing composition includes colloidal silica abrasive particles having a chemical compound incorporated therein. The chemical compound may include a nitrogen-containing compound such as an aminosilane or a phosphorus-containing compound. Methods for employing such compositions include applying the composition to a semiconductor substrate to remove at least a portion of at least one of a copper, a copper barrier, and a dielectric layer.

Abstract: An inkjet printing radiation curable inkjet ink for forming a protective layer during an etching process includes at least 70 percent by weight of a polymerizable composition based on the total weight of radiation curable inkjet ink, wherein the polymerizable composition has an oxygen fraction OFR>0.250 and a weighted polymerizable functionality WPF?0.0050, and the polymerizable composition contains no polymerizable compound with an ethylenic double bond and including a phosphoester group or a carboxylic acid group in the molecule thereof.

Abstract: Provided are a manufacturing method of an inkjet print head, the inkjet print head and a drawing apparatus equipped with the inkjet print head. The manufacturing method includes: forming a separation assisting layer on a substrate; forming heating resistors, thin-film transistors and nozzles for ejecting liquid, on the separation assisting layer; separating the separation assisting layer from the substrate; forming a first heat-conductive layer on the opposite surface of the separation assisting layer from the nozzles; and forming an ink supply port for supplying ink to the nozzles from a first heat-conductive layer side of the inkjet print head.

Abstract: Methods for improving adhesion or bonding between materials used in forming components of directional drilling assemblies, such as rotors and stators, are provided. A surface of a component may be treated, such as through cleaning, etching and/or activating a surface. The use of plasma treatment may enhance the adhesion between the surfaces and/or materials to be bonded, thereby reducing the degradation or mechanical failure of these materials in oilfield applications.

Abstract: A polishing method and a polishing apparatus for performing a measurement of a film thickness of a substrate, such as a wafer, if an error has occurred during polishing of the substrate. The polishing method includes polishing a plurality of substrates, measuring a film thickness of at least one substrate, which has been designated in advance, of the plurality of substrates that have been polished, and if a polishing error has occurred during polishing of any one of the plurality of substrates, measuring a film thickness of that substrate.

Abstract: The angular ion distribution in plasma processing is controlled using a bias voltage frequency. In one example, a plasma containing gas ions is generated in a plasma chamber. The plasma sheath is modified using an aperture disposed between the plasma sheath and the workpiece so that the plasma sheath takes a shape above the aperture. An oscillating radio frequency bias voltage is generated and applied to a workpiece holder. The workpiece holder applies the bias voltage to the workpiece to generate a workpiece bias voltage with respect to the plasma to attract ions across the plasma sheath toward the workpiece. The aperture and the frequency of the bias voltage control an angle at which the ions are attracted toward the workpiece.

Abstract: Techniques herein include methods for curing a layer of material (such as a resist) on a substrate to enable relatively greater heat reflow resistance. Increasing reflow resistance enables successful directed self-assembly of block copolymers. Techniques include receiving a substrate having a patterned photoresist layer and positioning this substrate in a processing chamber of a capacitively coupled plasma system. The patterned photoresist layer is treated with a flux of electrons by coupling negative polarity direct current power to a top electrode of the plasma processing system during plasma processing. The flux of electrons is accelerated from the top electrode with sufficient energy to pass through a plasma and its sheath, and strike the substrate such that the patterned photoresist layer changes in physical properties, which can include an increased glass-liquid transition temperature.

Abstract: Described herein are various systems and methods for using acidic media to enhance the surface characteristics of glass articles while reducing the adverse effects of precipitate/sludge formation. The systems and methods generally implement a precipitation-capturing device that is configured to 1) permit formation of sludge thereon and 2) reduce formation of the sludge on other solid surfaces involved in the systems and methods.

Abstract: A method of manufacturing an optical image stabilizer including providing a silicon-on-insulator (SOI) substrate that includes first and second silicon each provided on an upper surface and a lower surface of the substrate, having an insulator layer therebetween, forming a table, a cantilever arm connected to the table, an anchor connected to the cantilever arm, and an electrode opposite to the cantilever arm by etching the first silicon, allowing the table and the cantilever arm to levitate from the second silicon by removing an insulator layer disposed under the table and the cantilever arm, and mounting an image sensor on the table.

Abstract: The present invention relates to a diblock copolymer that may facilitate formation of a finer nano pattern, and be used for manufacture of an electronic device including a nano pattern or a bio sensor, and the like, a method for preparing the same, and a method for forming a nano pattern using the same, The diblock copolymer comprises a hard segment including at least one specific acrylamide-based repeat unit, and a soft segment including at least one (meth)acrylate-based repeat unit.

Abstract: A method for creating small features in an Al/Ag/Ti multilayer stack is disclosed. The method uses a combination of wet and dry etching techniques to anisotropically etch the layers.

Abstract: The present invention relates to a method for forming a silicon oxide nanopattern, in which the method can be used to easily form a nanodot or nanohole-type nanopattern, and a metal nanopattern formed by using the same can be properly applied to a next-generation magnetic recording medium for storage information, etc., a method for forming a metal nanopattern, and a magnetic recording medium for information storage using the same. The method for forming a silicon oxide nanopattern includes the steps of forming a block copolymer thin film including specific hard segments and soft segments containing a (meth)acrylate-based repeating unit on silicon oxide of a substrate; conducting orientation of the thin film; selectively removing the soft segments from the block copolymer thin film; and conducting reactive ion etching of silicon oxide using the block copolymer thin film from which the soft segments are removed, as a mask to form a silicon oxide nanodot or nanohole pattern.

Abstract: A method includes forming a hard mask (HM) stack over a material layer, which has a first, second, third and fourth HM layers. The method also includes forming a first trench in the fourth HM layer, forming a first spacer in the first trench, forming a second trench in the fourth HM layer, removing at least a portion of the first spacer to form a cut by using the third HM layer as an etch-stop layer, removing a portion of the third HM layer and the second HM layer exposed by the first trench, second trench, and cut to form an extended first trench, extended second trench, and extended cut, respectively. The method also includes forming second spacers in the extended first trench, the extended second trench, and the extended cut and removing another portion of the second HM layer to form a third trench.

Abstract: Methods are provided for processing a substrate in single substrate tool. In one embodiment, the method includes providing the substrate in the single substrate tool, applying a first processing fluid at a first temperature greater than 100° C. to a lower surface of the substrate to heat the substrate to approximately the first temperature, and applying a second processing fluid at a second temperature greater than 100° C. to an upper surface of the substrate.

Abstract: A polishing agent includes a particle of a metal oxide, a water-soluble polyamide, an organic acid and water. The water-soluble polyamide has a tertiary amino group and/or an oxyalkylene chain in a molecule thereof. The polishing agent has a pH of 7 or less.