Patents Examined by Bernard F. Plantz
  • Patent number: 4562090
    Abstract: The method of the present invention improves the density, strength and bonding of coatings which have previously been applied to substrates by prior art methods such as chemical deposition, electrochemical processed, thermal deposition, and mechanical coating. The method of the present invention subjects the coated substrate to a thermal mechanical process in the form of a compressive stress which is applied to the coating at a temperature greater than about 0.5 T.sub.i and less than T.sub.i where T.sub.i is the incipient melting temperature. The compressive stress is preferably applied through a pressure transfer medium and should be greater in magnitude than about 30 ksi. The dwell time under maximum compressive stress can be from about 0.1 second to about 10 seconds depending on the temperature of the coating, the substrate and the magnitude of the compressive stress.
    Type: Grant
    Filed: November 30, 1983
    Date of Patent: December 31, 1985
    Assignee: Gray Tool Company
    Inventors: James Dickson, Charles Hays
  • Patent number: 4559897
    Abstract: Apparatus for the coloring or tinting of one or more selected areas of a soft or flexible contact lens to precise measurements comprises a support means formed to closely match one of the surfaces of the lens and a mask means adapted to operatively associate with the support means to delineate said one or more selected areas by providing one or more peripheral zones of compression within the lens to prevent the migration of an applied coloring or tinting medium thereacross. In use the lens is positioned on the support means so that one of the surfaces thereof closely matches the support means, the mask means is arranged to provide one or more peripheral zones of compression delineating said one or more selected areas, and a coloring or tinting medium is applied to at least one selected area.
    Type: Grant
    Filed: March 29, 1985
    Date of Patent: December 24, 1985
    Inventors: Peter D. Urrea, Geoffrey W. Doris, Stephen D. Newman
  • Patent number: 4559245
    Abstract: Paint shield holders and shielding methods form a pair of planar sheets and an interconnecting resilient bight portion into a clip for receiving a planar edge portion of a paint shield between major surfaces which in area are a multiple of a cross-section of each planar sheet perpendicular to the major surfaces. The resilient clip is employed to bias the planar sheets at their major surfaces into frictional engagement with the contacted planar edge portion of the inserted shield. Instead of nuts, bolts or other fasteners, the mentioned frictional engagement is employed as the only agency at the major surfaces of the planar sheets for holding the planar edge portion of the shield in place upon mere manual insertion of the shield at the planar edge portion into the clip.
    Type: Grant
    Filed: August 25, 1983
    Date of Patent: December 17, 1985
    Inventor: William C. Stark
  • Patent number: 4556471
    Abstract: An improved electric arc vapor deposition source plate mounting assembly (8) is disclosed. The source plate assembly is formed of a plurality of cooperatively mating sections (12, 22 and 24) that are secured to one another by fastening members (30, 32). The innermost section (24) carries an electrode (26) of coating source material. Insulator seal rings (56, 58) electrically isolate the mating sections (12, 22 and 24) from one another while forming a vacuum seal between the respective mating members. The insulator seal rings (56, 58) have two adjoining sections annularly displaced from one another such that the rings are self-centering between the respective mating members. The insulator rings preferably have a substantially L-shaped cross-section and include an enlarged bulge portion (61) for improved sealing characteristics.
    Type: Grant
    Filed: October 14, 1983
    Date of Patent: December 3, 1985
    Assignee: Multi-Arc Vacuum Systems Inc.
    Inventors: Clark Bergman, Gary E. Vergason, William Allen, Michael F. Reed
  • Patent number: 4554025
    Abstract: The removal of paint from a support device for a product in a paint finishing operation is improved by using a support device with a critical surface tension such that paint adheres to the surface, yet readily fractures and debonds when treated with a cryogenic liquid. The paint is then removed by contacting the cryogenically treated support device with a non-metallic, non-silica base solid, gas or liquid with sufficient force to effectively remove the paint.
    Type: Grant
    Filed: March 18, 1985
    Date of Patent: November 19, 1985
    Assignee: Air Products and Chemicals, Inc.
    Inventors: Thomas W. Burke, Robert A. Welch, Kevin S. Schmoyer, Bernard D. Bauman
  • Patent number: 4553022
    Abstract: An effusion cell assembly includes a self-supporting element disposed within a housing member. The self-supporting element provides efficient heat transfer to a crucible positioned therein and permits operation at relatively lower filament tempertures.
    Type: Grant
    Filed: June 4, 1984
    Date of Patent: November 12, 1985
    Assignee: The Perkin-Elmer Corporation
    Inventor: Paul Colombo
  • Patent number: 4552092
    Abstract: A vacuum vapor deposition system including a high-vacuum vapor deposition chamber provided with a rotary cell around which band steel is wound as it is passed through the chamber. A crucible for molten metal has a hood for guiding vapor of said metal to a vapor deposition port opposed to the rotary cell, and arcuate covers connected to the hood at the entrance and exit positions of the band steel. The vapor deposition port is spaced slightly from the rotary cell so that the covers will not come into contact with the band steel. A heater is provided for heating the surface of the rotary cell up to a temperature equal to or higher than a reevaporation temperature of the metal under a vapor pressure of the vapor of the metal in the proximity of the rotary cell so that the metal will not be deposited onto the opposite end portions of the rotary cell which are not covered by the band steel.
    Type: Grant
    Filed: September 19, 1984
    Date of Patent: November 12, 1985
    Assignees: Mitsubishi Jukogyo Kabushiki Kaisha, Nisshin Steel Co., Ltd.
    Inventors: Kenichi Yanagi, Toshio Taguchi, Tetsuyoshi Wada, Heisaburo Furukawa, Kanji Wake
  • Patent number: 4551221
    Abstract: The apparatus comprises a consumable cathode (1) having a working end face (3), a solenoid (4) coaxially disposed relative to the consumable cathode (1) and having a tubular anode (5) received therein, an igniting electrode (6). Solenoid (4) encircles the tubular anode (5) and the consumable cathode (1), the number of turns per unit length of the solenoid (4) around the consumable cathode (1) being greater than the number of turns per unit length in the remaining portion of the solenoid (4).Moreover, the solenoid (4) extends beyond the igniting electrode (6) at the side opposite to the working end face (3) by a length exceeding half the length of the portion of the solenoid (4) disposed around the consumable cathode (1).
    Type: Grant
    Filed: August 15, 1984
    Date of Patent: November 5, 1985
    Inventors: Ivan I. Axenov, Viktor G. Bren, Valentin G. Padalka, Leonid P. Sablev, Rimma I. Stupak, Vladimir M. Khoroshikh
  • Patent number: 4548159
    Abstract: A chemical vapor deposition wafer boat for polysilicon deposition in a vertical CVD apparatus comprises upper and lower, mutually engaging, open ended hemicylinders. Gas flow passageways are present in a diffusion zone of the lower hemicylinder wall, but not in the remainder of the walls of the hemicylinder. Gas flow to the wafers is limited to diffusion flow, and the wafers are protected from particulates forming in the gas stream during the coating operation.
    Type: Grant
    Filed: July 6, 1984
    Date of Patent: October 22, 1985
    Assignee: Anicon, Inc.
    Inventors: Derrick W. Foster, Robert B. Herring
  • Patent number: 4546726
    Abstract: An apparatus for reacting a semiconductor wafer with steam includes a reaction tube and a heater for heating the reaction tube. The reaction tube is divided into three chambers by partition plates having a through hole. Pure water is directly supplied into the most upstream chamber and is evaporated into steam. The steam enters the second chamber and further heated therein into superheated steam. The superheated steam enters the most downstream chamber in which a semiconductor wafer or wafers are placed, and is heated sufficient for reaction with the wafer to form an oxide film thereon.
    Type: Grant
    Filed: October 26, 1983
    Date of Patent: October 15, 1985
    Assignee: Tokyo Shibaura Denki Kabushiki Kaisha
    Inventors: Syuichi Nagasaka, Siyoukichi Kaneko
  • Patent number: 4546725
    Abstract: A magnetic recording medium manufacturing apparatus is comprised of a cooling rotary cylinder can and a small roller, arranged adjacent to each other. A flexible endless belt is laid over the can and roller and carries a tape-shaped support. A ferromagnetic material, evaporated from an evaporation source disposed below the can and roller, is vacuum-deposited onto the tape-shaped support.
    Type: Grant
    Filed: March 8, 1984
    Date of Patent: October 15, 1985
    Assignee: Fuji Photo Film Co., Ltd.
    Inventors: Ryuji Shirahata, Masaru Sekine, Goro Akashi
  • Patent number: 4547404
    Abstract: A chemical vapor deposition device having uniformly distributed heating means substantially surrounding an inner deposition reaction chamber for providing isothermal or precisely controlled gradient temperature conditions therein, the reaction chamber being surrounded by the walls of an outer vacuum chamber spaced therefrom.
    Type: Grant
    Filed: October 2, 1984
    Date of Patent: October 15, 1985
    Assignee: Anicon, Inc.
    Inventors: Bryant A. Campbell, Nicholas E. Miller
  • Patent number: 4545327
    Abstract: A chemical vapor deposition device having uniformly distributed heating means substantially surrounding an inner deposition reaction chamber for providing isothermal or precisely controlled gradient temperature conditions therein, the reaction chamber being surrounded by the walls of an outer vacuum chamber spaced therefrom.
    Type: Grant
    Filed: August 27, 1982
    Date of Patent: October 8, 1985
    Assignee: Anicon, Inc.
    Inventors: Bryant A. Campbell, Nicholas E. Miller
  • Patent number: 4545328
    Abstract: In a vapor deposition film forming apparatus having a plurality of reactors each having a substrate and an electrode oppositely arranged in a vacuum chamber and means for applying a voltage thereacross to react or decompose reaction gas introduced into the vacuum chamber, the reactors are arranged on a circumference of a circle and reaction gas supply pipes having substantially equal supply resistance radially extend to the reactors from a gas reservoir located at the center of the circle.
    Type: Grant
    Filed: September 6, 1984
    Date of Patent: October 8, 1985
    Assignee: Canon Kabushiki Kaisha
    Inventors: Yasutomo Fujiyama, Shotaro Okabe
  • Patent number: 4543910
    Abstract: A vapor deposition apparatus for continuously regulating the deposition thickness from vapor as it is being vacuum deposited across and progressively along one side of a substrate from one or more vapor sources spaced thereacross. The apparatus comprises a central shaft rotatably supporting hollow shafts in end-to-end relation, a series of profile discs on each of the hollow shafts and slidable radially thereon by a slot in each profile disc slidably locating on flats on the hollow shafts. The profile discs are placed between vapor sources, and the substrate moving through a vacuum coating chamber so that the profile discs form a mask controlling the vapor deposition across the substrate. The hollow shafts are coupled to electric motors which may rotate the hollow shafts in response to signals from deposition thickness sensing means.
    Type: Grant
    Filed: October 15, 1984
    Date of Patent: October 1, 1985
    Assignee: Canadian Patents and Development Limited
    Inventor: Jerzy A. Dobrowolski
  • Patent number: 4542711
    Abstract: A continuous system for depositing at least one layer of amorphous semiconductor material upon a substrate. Feed and takeup sections provide reel-to-reel advancement of a thin film substrate through the system. At least one chamber is located between the feed and takeup sections. A plasma is generated therein by glow discharge decomposition of an appropriate mixture of reaction gases. Apparatus associated with the chamber allows the close regulation of the plasma/substrate surface equilibrium to assure the deposition of a uniform layer of amorphous material. At least one servocontrolled reel drive regulates the tension of the web-like substrate as it advances to avoid cracking and to assure its proper registration with a mask comprising a plurality of strips. A curtain of inert gas provides isolation between the interior of each chamber and the environment.
    Type: Grant
    Filed: March 16, 1981
    Date of Patent: September 24, 1985
    Assignee: Sovonics Solar Systems
    Inventors: Masatsugu Izu, Herbert C. Ovshinsky
  • Patent number: 4542712
    Abstract: An apparatus for molecular beam epitaxy according to the present invention is so constructed that a substrate is introduced into a vacuum vessel with a substrate surface for epitaxial growth facing in the direction of gravity, and that the substrate is conveyed to and transferred into vacuum chambers for performing processes necessary for the epitaxial growth, with the substrate surface maintained in the direction of gravity and without directly touching the substrate surface.
    Type: Grant
    Filed: June 22, 1984
    Date of Patent: September 24, 1985
    Assignee: Hitachi, Ltd.
    Inventors: Kazuo Sato, Sumio Yamaguchi, Shigeo Kato, Yasuhide Matsumura, Muneo Mizumoto, Sumio Okuno, Naoyuki Tamura
  • Patent number: 4539933
    Abstract: An improved chemical vapor deposition device having heating means substantially surrounding an inner deposition chamber for providing isothermal or precisely controlled gradient temperature conditions therein. The internal components of the chamber are quartz or similar radiant energy transparent material. Also included are special cooling means to protect thermally sensitive seals, structural configurations strengthening areas of glass components subjected to severe stress during operation, and specific designs permitting easy removal and replacement of all glass components exposed to deposition gas.
    Type: Grant
    Filed: August 31, 1983
    Date of Patent: September 10, 1985
    Assignee: Anicon, Inc.
    Inventors: Bryant A. Campbell, Dale R. DuBois, Ralph F. Manriquez, Nicholas E. Miller
  • Patent number: 4539934
    Abstract: In a vapor deposition film forming apparatus having a plurality of reactors each having a substrate and an electrode oppositely arranged in a vacuum chamber and means for applying a voltage thereacross to react or decompose reaction gas introduced into the vacuum chamber, the reactors are arranged on the circumference of a circle and exhaust pipes having substantially equal exhaust resistance radially extend to the reactors from a common exhaust pipe located at the center of the circle.
    Type: Grant
    Filed: September 6, 1984
    Date of Patent: September 10, 1985
    Assignee: Canon Kabushiki Kaisha
    Inventors: Yasutomo Fujiyama, Shotaro Okabe
  • Patent number: 4537795
    Abstract: A method for introducing sweep gas through a baffle system adapted for use with glow discharge deposition apparatus in which successive amorphous semiconductor layers are deposited on a substrate. The deposition apparatus includes at least a pair of adjacent dedicated deposition chambers into each of which different process gases are introduced, the chambers being operatively connected by a gas gate. Inert gases are swept through the gas gate to minimize back diffusion of process gases from the chambers. The baffle system is adapted to prevent said sweep gases from entering into turbulent flow when traveling through the gas gate passageway. Further, a sufficient volume per unit time of sweep gas is introduced to insure that some sweep gas flows into the cathode region of the first chamber, thereby substantially preventing process gases and plasma from escaping from the cathode region and forming silane powder.
    Type: Grant
    Filed: August 3, 1984
    Date of Patent: August 27, 1985
    Assignee: Sovonics Solar Systems
    Inventors: Prem Nath, Kevin R. Hoffman, Timothy D. Laarman