Abstract: The method of the present invention improves the density, strength and bonding of coatings which have previously been applied to substrates by prior art methods such as chemical deposition, electrochemical processed, thermal deposition, and mechanical coating. The method of the present invention subjects the coated substrate to a thermal mechanical process in the form of a compressive stress which is applied to the coating at a temperature greater than about 0.5 T.sub.i and less than T.sub.i where T.sub.i is the incipient melting temperature. The compressive stress is preferably applied through a pressure transfer medium and should be greater in magnitude than about 30 ksi. The dwell time under maximum compressive stress can be from about 0.1 second to about 10 seconds depending on the temperature of the coating, the substrate and the magnitude of the compressive stress.

Abstract: Apparatus for the coloring or tinting of one or more selected areas of a soft or flexible contact lens to precise measurements comprises a support means formed to closely match one of the surfaces of the lens and a mask means adapted to operatively associate with the support means to delineate said one or more selected areas by providing one or more peripheral zones of compression within the lens to prevent the migration of an applied coloring or tinting medium thereacross. In use the lens is positioned on the support means so that one of the surfaces thereof closely matches the support means, the mask means is arranged to provide one or more peripheral zones of compression delineating said one or more selected areas, and a coloring or tinting medium is applied to at least one selected area.

Abstract: Paint shield holders and shielding methods form a pair of planar sheets and an interconnecting resilient bight portion into a clip for receiving a planar edge portion of a paint shield between major surfaces which in area are a multiple of a cross-section of each planar sheet perpendicular to the major surfaces. The resilient clip is employed to bias the planar sheets at their major surfaces into frictional engagement with the contacted planar edge portion of the inserted shield. Instead of nuts, bolts or other fasteners, the mentioned frictional engagement is employed as the only agency at the major surfaces of the planar sheets for holding the planar edge portion of the shield in place upon mere manual insertion of the shield at the planar edge portion into the clip.

Abstract: An improved electric arc vapor deposition source plate mounting assembly (8) is disclosed. The source plate assembly is formed of a plurality of cooperatively mating sections (12, 22 and 24) that are secured to one another by fastening members (30, 32). The innermost section (24) carries an electrode (26) of coating source material. Insulator seal rings (56, 58) electrically isolate the mating sections (12, 22 and 24) from one another while forming a vacuum seal between the respective mating members. The insulator seal rings (56, 58) have two adjoining sections annularly displaced from one another such that the rings are self-centering between the respective mating members. The insulator rings preferably have a substantially L-shaped cross-section and include an enlarged bulge portion (61) for improved sealing characteristics.

Abstract: The removal of paint from a support device for a product in a paint finishing operation is improved by using a support device with a critical surface tension such that paint adheres to the surface, yet readily fractures and debonds when treated with a cryogenic liquid. The paint is then removed by contacting the cryogenically treated support device with a non-metallic, non-silica base solid, gas or liquid with sufficient force to effectively remove the paint.

Abstract: An effusion cell assembly includes a self-supporting element disposed within a housing member. The self-supporting element provides efficient heat transfer to a crucible positioned therein and permits operation at relatively lower filament tempertures.

Abstract: A vacuum vapor deposition system including a high-vacuum vapor deposition chamber provided with a rotary cell around which band steel is wound as it is passed through the chamber. A crucible for molten metal has a hood for guiding vapor of said metal to a vapor deposition port opposed to the rotary cell, and arcuate covers connected to the hood at the entrance and exit positions of the band steel. The vapor deposition port is spaced slightly from the rotary cell so that the covers will not come into contact with the band steel. A heater is provided for heating the surface of the rotary cell up to a temperature equal to or higher than a reevaporation temperature of the metal under a vapor pressure of the vapor of the metal in the proximity of the rotary cell so that the metal will not be deposited onto the opposite end portions of the rotary cell which are not covered by the band steel.

Abstract: The apparatus comprises a consumable cathode (1) having a working end face (3), a solenoid (4) coaxially disposed relative to the consumable cathode (1) and having a tubular anode (5) received therein, an igniting electrode (6). Solenoid (4) encircles the tubular anode (5) and the consumable cathode (1), the number of turns per unit length of the solenoid (4) around the consumable cathode (1) being greater than the number of turns per unit length in the remaining portion of the solenoid (4).Moreover, the solenoid (4) extends beyond the igniting electrode (6) at the side opposite to the working end face (3) by a length exceeding half the length of the portion of the solenoid (4) disposed around the consumable cathode (1).

Abstract: A chemical vapor deposition wafer boat for polysilicon deposition in a vertical CVD apparatus comprises upper and lower, mutually engaging, open ended hemicylinders. Gas flow passageways are present in a diffusion zone of the lower hemicylinder wall, but not in the remainder of the walls of the hemicylinder. Gas flow to the wafers is limited to diffusion flow, and the wafers are protected from particulates forming in the gas stream during the coating operation.

Abstract: A chemical vapor deposition device having uniformly distributed heating means substantially surrounding an inner deposition reaction chamber for providing isothermal or precisely controlled gradient temperature conditions therein, the reaction chamber being surrounded by the walls of an outer vacuum chamber spaced therefrom.

Abstract: An apparatus for reacting a semiconductor wafer with steam includes a reaction tube and a heater for heating the reaction tube. The reaction tube is divided into three chambers by partition plates having a through hole. Pure water is directly supplied into the most upstream chamber and is evaporated into steam. The steam enters the second chamber and further heated therein into superheated steam. The superheated steam enters the most downstream chamber in which a semiconductor wafer or wafers are placed, and is heated sufficient for reaction with the wafer to form an oxide film thereon.

Abstract: A magnetic recording medium manufacturing apparatus is comprised of a cooling rotary cylinder can and a small roller, arranged adjacent to each other. A flexible endless belt is laid over the can and roller and carries a tape-shaped support. A ferromagnetic material, evaporated from an evaporation source disposed below the can and roller, is vacuum-deposited onto the tape-shaped support.

Abstract: In a vapor deposition film forming apparatus having a plurality of reactors each having a substrate and an electrode oppositely arranged in a vacuum chamber and means for applying a voltage thereacross to react or decompose reaction gas introduced into the vacuum chamber, the reactors are arranged on a circumference of a circle and reaction gas supply pipes having substantially equal supply resistance radially extend to the reactors from a gas reservoir located at the center of the circle.

Abstract: A chemical vapor deposition device having uniformly distributed heating means substantially surrounding an inner deposition reaction chamber for providing isothermal or precisely controlled gradient temperature conditions therein, the reaction chamber being surrounded by the walls of an outer vacuum chamber spaced therefrom.

Abstract: A vapor deposition apparatus for continuously regulating the deposition thickness from vapor as it is being vacuum deposited across and progressively along one side of a substrate from one or more vapor sources spaced thereacross. The apparatus comprises a central shaft rotatably supporting hollow shafts in end-to-end relation, a series of profile discs on each of the hollow shafts and slidable radially thereon by a slot in each profile disc slidably locating on flats on the hollow shafts. The profile discs are placed between vapor sources, and the substrate moving through a vacuum coating chamber so that the profile discs form a mask controlling the vapor deposition across the substrate. The hollow shafts are coupled to electric motors which may rotate the hollow shafts in response to signals from deposition thickness sensing means.

Abstract: A continuous system for depositing at least one layer of amorphous semiconductor material upon a substrate. Feed and takeup sections provide reel-to-reel advancement of a thin film substrate through the system. At least one chamber is located between the feed and takeup sections. A plasma is generated therein by glow discharge decomposition of an appropriate mixture of reaction gases. Apparatus associated with the chamber allows the close regulation of the plasma/substrate surface equilibrium to assure the deposition of a uniform layer of amorphous material. At least one servocontrolled reel drive regulates the tension of the web-like substrate as it advances to avoid cracking and to assure its proper registration with a mask comprising a plurality of strips. A curtain of inert gas provides isolation between the interior of each chamber and the environment.

Abstract: An apparatus for molecular beam epitaxy according to the present invention is so constructed that a substrate is introduced into a vacuum vessel with a substrate surface for epitaxial growth facing in the direction of gravity, and that the substrate is conveyed to and transferred into vacuum chambers for performing processes necessary for the epitaxial growth, with the substrate surface maintained in the direction of gravity and without directly touching the substrate surface.

Abstract: An improved chemical vapor deposition device having heating means substantially surrounding an inner deposition chamber for providing isothermal or precisely controlled gradient temperature conditions therein. The internal components of the chamber are quartz or similar radiant energy transparent material. Also included are special cooling means to protect thermally sensitive seals, structural configurations strengthening areas of glass components subjected to severe stress during operation, and specific designs permitting easy removal and replacement of all glass components exposed to deposition gas.

Abstract: In a vapor deposition film forming apparatus having a plurality of reactors each having a substrate and an electrode oppositely arranged in a vacuum chamber and means for applying a voltage thereacross to react or decompose reaction gas introduced into the vacuum chamber, the reactors are arranged on the circumference of a circle and exhaust pipes having substantially equal exhaust resistance radially extend to the reactors from a common exhaust pipe located at the center of the circle.

Abstract: A method for introducing sweep gas through a baffle system adapted for use with glow discharge deposition apparatus in which successive amorphous semiconductor layers are deposited on a substrate. The deposition apparatus includes at least a pair of adjacent dedicated deposition chambers into each of which different process gases are introduced, the chambers being operatively connected by a gas gate. Inert gases are swept through the gas gate to minimize back diffusion of process gases from the chambers. The baffle system is adapted to prevent said sweep gases from entering into turbulent flow when traveling through the gas gate passageway. Further, a sufficient volume per unit time of sweep gas is introduced to insure that some sweep gas flows into the cathode region of the first chamber, thereby substantially preventing process gases and plasma from escaping from the cathode region and forming silane powder.