Abstract: An improved crystal plating device having a base containing a power circuit and an oscillating circuit. The base is provided with a chamber and has a sealed top enclosing the chamber. At least one pair of filament posts are fixed to the base and disposed within the chamber and in the power circuit. A filament is connected across the filament posts. A crystal holder is removably connected with the base. The crystal is held by the holder in the oscillating circuit. A pump is connected to the base to vacuum pump the chamber. Energizing the circuits will oscillate the crystal and evaporate the filament to plate the crystal and produce the desired frequency therefore.Filament posts each comprising a hollow body having an insulating sleeve thereon are threadedly received on a member affixed to the base. A slot is provided in the body near the upper end with a spring biased pivotable lever, the filament being disposed within the slot.

Abstract: In a molecular beam epitaxy furnace, a heater is described for heating the interior of an effusion cell. The heater includes an outer cylindrical sleeve having one end connected to receive a vacuum, and an opposite end extending into the furnace. An inner sleeve is provided coaxial with the outer cylindrical sleeve, one end of the inner sleeve being sealed with the opposite end of the cylindrical sleeve. The inner sleeve extends along a portion of the outer cylindrical sleeve providing an interior vacuum chamber. A heating element is disposed between the cylindrical sleeve and inner sleeve which heats the interior crucible receiving chamber and a crucible therein bearing semiconductor constituent material such that the semiconductor constituent material effuses without contamination from the heating element.

Abstract: The apparatus is capable of being immersed in a liquid bath and supports at least two dowels or rods on which are mounted apertured discs in spaced apart relationship. Each rod has a gear fixed near one end and has a plurality of axially spaced circumferential grooves in each of which respective apertured discs are disposed. A pair of spaced wheels are provided to rotate in unison about a fixed axle. Each wheel has a plurality of radially disposed slots into which respective rods are disposed so that each dowel is capable of rotating about its own axis. The axle supports a fixed sun gear disposed near one wheel and each rod has at one end a planet gear that meshes with the sun gear whenever the respective rod is nested within a respective pair of slots on the wheels. Means are provided to rotate said pair of wheels about said axle. To prevent the rods from falling out of their respective slots as the wheels rotate, a C-shaped keeper device is disposed around each wheel and in a fixed position.

Abstract: This invention relates more particularly to an electron-gun metal evaporation system for solder (lead/tin, lead/indium) deposition upon integrated circuit chips. This system utilizes a crucible comprised of a tantalum bent-cone V-shaped liner or cup seated in spaced relationship in a recess of a copper hearth.

Abstract: In a photochemical vapor deposition apparatus, a reaction space forming a passage for a photoreactive gas, in which reaction space a substrate is to be placed, and a discharge space, in which electric plasma discharge is generated for radiating ultraviolet rays which cause photochemical reaction of the photoreactive gas, are surrounded by the same vessel. A mercury reservoir that communicates with the discharge space by way of a communication pipe is provided outside the vessel, the communication pipe is heated at a temperature higher than that of the mercury reservoir by a heater, and the mercury reservoir is controlled in temperature by a Peltier effect element which may be cooled with a water-cooled block provided on one side thereof.This photochemical vapor deposition apparatus can achieve photochemical vapor deposition with high efficiency, because the control of the vapor pressure of mercury for discharge is carried out easily and ultraviolet rays can be radiated with high efficiency.

Abstract: A quartz boat is formed with a plurality of spaced, parallel rods having slots for supporting a series of semi-conductor wafers in a generally edgewise, spaced, parallel position. The slots continue to the ends of the rods, and the cross members supporting the rods are spaced inwardly from the rod ends, such that a series of boats may be arranged with the rods in end-to-end relation and the wafer space between adjacent boats is the same as the wafer space in the middle of a boat. The boat is also provided with a pair of tubes parallel to the rods for receiving a pickup fork.

Abstract: An apparatus for manufacturing photovoltaic devices of the type including a plurality of layers of semiconductor materials deposited onto a substrate includes a plurality of deposition chambers, each chamber arranged to deposit a respective one of the layers of semiconductor materials onto the substrate as the substrate is advanced therethrough. At least one of the deposition chambers is coupled to a source of microwave energy to form a microwave energy excited glow discharge plasma within the at least one deposition chamber for depositing at least one of the layers of semiconductor material onto the substrate from the microwave energy excited glow discharge plasma within the at least one deposition chamber.Also disclosed is an assembly for depositing a material onto a substrate from a microwave energy excited plasma. The assembly includes a deposition chamber, a source of microwave energy, and an antenna extending into the chamber and coupled to the microwave energy source.

Abstract: An upstream cathode system for use with glow discharge deposition apparatus, said apparatus adapted for the production of large area photovoltaic devices. In such apparatus, process gases are commonly introduced into a deposition chamber from a gas manifold disposed on the upstream side of a substrate. As the process gases are drawn across the surface of the substrate, they are continuously disassociated and recombined under the influence of an electromagnetic field developed by a deposition cathode or microwave generator. By providing a precathode system, upstream of the deposition cathode or microwave generator, (1) impurities in the process gases, (2) contaminants from the walls of the deposition chamber and (3) initially disassociated and recombined process gas compositions may be deposited onto and collected from a collection plate disposed upstream of the substrate.

Abstract: An apparatus for physical vapor deposition comprising a vacuum casing one end of which is open; a sealing member provided at the opening of the casing; an electrode for physical vapor deposition, such as a target electrode or an electrode for heating evaporation, which is provided in the casing; and an exhaust hole for exhausting gases in the casing, which is provided at a predetermined wall portion of the casing. The apparatus may also be provided with a gas introducing hole and a bias electrode. The casing is integrally fitted to a body to be treated at the opening end portion thereof by means of the sealing member to form a vacuum chamber therein. This apparatus is compact and enables the surface treatment of a large or immovable body without moving the body.

Abstract: A semiconductor device having a deposited phosphosilicate glass film, containing an insubstantial amount of hydrogen and a low phosphorus concentration, is manufactured at a high mass productivity. This semiconductor device is manufactured by first placing plural substrates for semiconductor devices to be treated in a reaction tube so that the main surfaces of the substrates are substantially vertically aligned with respect to one another and are substantially perpendicularly intersected by the central axis of the reaction tube, the reaction tube being provided with at least two gas feed pipes having plural small openings pierced along the longitudinal direction thereof.

Abstract: A plasma reactor wherein material deposition on the sidewall is substantially prevented. In a radial flow reactor, wherein the reagent gases are injected at periphery of an annular substrate holder and exhausted near the center of the holder, a second gas flow of diluent gases is provided, which also flows radially to be exhausted at the center of the substrate holder. Since the diluent gas flow begins outboard of the reagent gas flow, the gas flow across the reagent gas injection nozzles prevents reagent gases from flowing outward. Thus, the gas adjacent to the chamber wall is almost entirely composed of the inert diluent gas, and material deposition on reactor walls is prevented.

Abstract: In a radial flow plasma reactor, where reagent gas is introduced into the reaction chamber of the plasma reactor via a gas distribution ring located on the perimeter of a heated substrate holder while diluent gas is introduced into the chamber via the holes in an annular diluent gas member disposed over an rf electrode, an upstanding peripheral shield is provided around the perimeter of the substrate holder, outboard of the reagent gas introduction ports of the gas distribution ring.

Abstract: An improved apparatus for preparing a coating by subjecting gaseous reactant precursors to a glow discharge is disclosed. The improvement comprises an electrode which is larger in all dimensions than the substrate which is to be coated. Electrically insulated magnets are arranged such that the area of the magnets is proportionally distributed with respect to the area of the substrate to be coated, whereby enhanced uniformity of quality and thickness of the deposited coating are provided. Unexpectedly the coating deposition rate increases substantially without increasing the power required or precursor consumption, and further, the temperature does not markedly increase during deposition.

Abstract: The present invention provides a method of forming a metal pattern on a solar cell comprising the steps of forcing a molten metal through an aligned array of orifices by use of gas pressure; vibrating the aligned array of orifices to form the molten metal issuing from the orifices into metal droplets; moving a solar cell collinearly with the aligned array of orifices; and allowing each series of metal droplets from a single orifice to fall onto a specific region of the solar cell to build up a metal layer of increasing thickness, each metal droplet being permitted sufficient time to solidify prior to allowing the next metal droplet to strike the metal layer.

Abstract: A plurality of wafers on which semiconductor films having a uniform thickness and specific resistivity are obtained by a horizontal type low pressure vapor phase deposition system, i.e., a system using a horizontal reaction tube, in which wafers are aligned in parallel and transverse to a longitudinal axis of the tube. A main gas is introduced from a main inlet into the reaction tube and an auxiliary gas including an impurity gas is introduced from an auxiliary inlet into the reaction tube in such a manner that the impurity gas diffuses toward the main inlet along an inner wall of the reaction tube.

Abstract: A method of manufacturing a thin layer detector for integrating solid state dosimeters, in particular for thermoluminescence dosimeters (TLD's), from thermoluminescent powder material, comprising the simultaneous application of high pressure and elevated temperature to the powder layer at selected values (working point) sufficient to cause physico-chemical bonding of the layer with a suitably prepared substrate by plastic flow of the powder grains.

Abstract: Target holder with mechanical scanning. The device comprises several target supports mounted on a plate, which rotates about an axis and means for displacing the supports relative to the plate, arranged in such a way that the radial displacement increment of a support between two consecutive passages in front of the beam is constant throughout the duration of a sweep between two end positions of the support.Application to ion implantation on a silicon wafer.

Abstract: Reactive gases providing a coating on a substrate by CVD are made to meet in counterflow, in order to ensure, by the turbulence effect, that there is an almost instantaneous mixing of the reagents. The movement of the gases before contact is ensured by two pipes containing baffles, the effect of which is to cause the gases to rotate in opposite directions to one another.

Abstract: Apparatus is disclosed for accurately aligning a processing device with respect to a predetermined reference location on semiconductor lead frame. The apparatus is especially suitable for use with a plating head for plating the pads of a lead frame. The apparatus includes a drive motor having a precision lead screw for attachment to the processing device to shift the device through a small distance to accurately position the device with respect to the predetermined reference positions on the lead frame. The drive motor is coupled to a rotary encoder which is rotated in response to the movement of a pin positioned to enter a reference hole in the lead frame. As the lead frame is advanced by an indexing device, the pin enters a reference hole in the lead frame near the end of the travel of the lead frame, causing the rod to rotate the encoder and supply a signal which for comparison with a reference signal.

Abstract: A chemical vapor deposition apparatus has a reactor divided into a reaction space and a purging space by a susceptor for supporting a wafer and a loading chamber communicated through a gate with the reactor. Exhaust units are communicated with the reactor and loading chamber, respectively, so that the pressures in the reactor and loading chamber may be reduced. The susceptor has a plurality of recesses to aid placing or scooping the water. Through a transparent wall on the side of the purging space, the susceptor is heated by a lamp unit disposed outside the transparent wall. The loading chamber includes a wafer transport mechanism for charging a wafer into the reactor or discharging a processed wafer from the reactor. An unprocessed wafer is loaded to the loading chamber from a cassette and the processed wafer is unloaded to the cassette. One or a small number of wafers are processed at one time. A uniform film is deposited with a high reproducibility.