Abstract: The present invention relates to: a method of manufacturing glass with hollow nanopillars, which includes a silicon oxide layer forming step in which a silicon oxide layer made of silicon oxide is formed on one side of a glass substrate, a first etching step in which the silicon oxide layer is etched and a plurality of silicon oxide clusters are formed on the glass substrate, and a second etching step in which the glass substrate, on which the silicon oxide clusters are formed, is etched and hollow nanopillars are formed; and glass with hollow nanopillars manufactured thereby.

Abstract: A semiconductor device manufacturing method includes the steps of etching a semiconductor material by using plasma, forming a damage layer on the semiconductor material, and removing the damage layer such that a relatively low temperature process can form a fine pattern with a vertical cross section using a compound semiconductor material or the like.

Abstract: Methods and apparatus for processing a substrate are provided. For example, a method of processing a substrate comprises supplying oxygen (O2) into a processing volume of an etch chamber to react with a silicon-based hardmask layer atop a base layer of ruthenium to form a covering of an SiO-like material over the silicon-based hardmask layer and etching the base layer of ruthenium using at least one of O2 or chloride (Cl2) while supplying nitrogen (N2) to sputter some of the SiO-like material onto an exposed ruthenium sidewall created during etching.

Abstract: Methods for forming a vertical growth mask for use in etching applications are described herein. Disclosed embodiments include introducing a tungsten-containing deposition precursor and one or more carrier gases while igniting a plasma to deposit tungsten selectively on field regions of positive features of a patterned etch mask without substantial deposition on sidewalls of the positive features or on an exposed surface of a target layer underlying the patterned etch mask.

Abstract: The present disclosure relates to an apparatus and method for cleaning an edge director, and more particularly, to an edge director cleaning apparatus that includes two or more nozzle pipes arranged to be parallel to each other, nozzle tips respectively provided at first ends of the two or more nozzle pipes, fuel manifolds respectively connected to second ends of the two or more nozzle pipes, and a fixing guide configured to fix the nozzle pipes, wherein the nozzle tips extend in an oblique direction with respect to an extending direction of the nozzle pipes. When the apparatus and method for cleaning an edge director according to the present disclosure are used, devit can be safely removed without damage to the apparatus while reducing downtime.

Abstract: A method for manufacturing a vertically-laminated ferromagnetic core includes (a) depositing a conductive seed layer on or over a first side of a substrate; (b) depositing a masking layer on or over a second side of the substrate, the first and second sides on opposite sides of the substrate; (c) forming a pattern in the masking layer; (d) dry etching the substrate, based on the pattern in the masking layer, from the second side to the first side to expose portions of the conductive seed layer; and (e) depositing a ferromagnetic material onto the exposed portions of the conductive seed layer to form vertically-oriented ferromagnetic layers.

Abstract: The present invention addresses the problem of providing a remover composition which can sufficiently remove ruthenium (Ru) remaining on substrates and can be inhibited from evolving RuO4 gas. The remover composition, which is for removing ruthenium remaining on substrates, has a pH at 25° C. of 8 or higher and includes one or more pH buffer ingredients.

Abstract: A DNA sequencing device, and related methods, include a nanopore or nanochannel structure, and a nanoelectrode. The nanoelectrode includes electrode members having free ends exposed within the nanopore or nanochannel structure, an electrode gap defined between of the free ends, and plated portions formed on the free ends to provide a reduced sized for the electrode gap.

Abstract: A mesh spray erosion assembly includes a spray board having a length, a width, and a material thickness, a tile blank having a length, a width, and a material thickness supported on one side of the spray board, a mesh frame having a length and width greater than that of the tile blank, and a material thickness equal to or less than that of the tile blank, the mesh frame centered over the tile blank and mounted to the spray board, and a mesh screen having a length and a width, the mesh screen centered over the mesh frame and mounted thereon, the mesh screen including non-masked portions and masked portions, characterized in that a user may apply a pressurized liquid spray through the non-masked portions of the mesh screen against the surface of the tile blank eroding material from the surface thereof according to artist design.

Abstract: A composition for use in selective modification of a base material surface includes a polymer having, at an end of a main chain or a side chain thereof, a group including a first functional group capable of forming a bond with a metal, and a solvent.

Abstract: A substrate cleaning system includes a cleaner module to clean a substrate after polishing of the substrate, a drier module to dry the substrate after cleaning by the cleaner module, a substrate support movable along a first axis from a first position in the drier module to a second position outside the drier module, and an in-line metrology station including a line-scan camera positioned to scan the substrate as the substrate is held by the substrate support and the substrate support is between the first position to the second position. The first axis is substantially parallel to a face of the substrate as held in by the substrate support.

Abstract: Provided are pre-coat formulations, ink formulations, ink systems and printing methods for patterning a surface with a desired pattern.

Abstract: A thin walled balloon formed in polymer tubing has a patterned metal layer on its outer surface, created by physical vapor deposition (PVD). The pattern is defined by a stencil mask assembled around the balloon, with the balloon inflated therein. The PVD occurs without deforming or degrading the polymer material of the balloon, by actively pulling heat away from the balloon a) by forming the stencil mask out of metal; b) by providing a metal heat conduction path away from the balloon to a heat sink, such as outside the vacuum chamber, and/or c) by flow of a cooling fluid within the balloon during the PVD process. Proper PVD process parameters are selected to minimize heat generation, such as having argon pressure in the range of 0.8 to 1.2 milli-torr and generating the plasma at a power of less than about 200 watts/ square inch of effective target surface area.

Abstract: A method of coating particles includes dispensing particles into a vacuum chamber to form a particle bed in at least a lower portion of the chamber that forms a half-cylinder, evacuating the chamber through a vacuum port in an upper portion of the chamber, rotating a paddle assembly such that a plurality of paddles orbit a drive shaft to stir the particles in the particle bed, injecting a reactant or precursor gas through a plurality of channels into the lower portion of the chamber as the paddle assembly rotates to coat the particles, and injecting the reactant or precursor gas or a purge gas through the plurality of channels at a sufficiently high velocity such that the reactant or precursor a purge gas de-agglomerates particles in the particle bed.

Abstract: The present invention includes a method of making a RF impedance matching device in a photo definable glass ceramic substrate. A ground plane may be used to adjacent to or below the RF Transmission Line in order to prevent parasitic electronic signals, RF signals, differential voltage build up and floating grounds from disrupting and degrading the performance of isolated electronic devices by the fabrication of electrical isolation and ground plane structures on a photo-definable glass substrate.

Abstract: Methods and apparatus for performing physical vapor deposition in a reactor chamber to form aluminum material on a substrate including: depositing a first aluminum layer atop a substrate to form a first aluminum region having a first grain size and a first temperature; and cooling the first aluminum region atop a substrate to a second temperature at a rate sufficient to increase the first grain size to a second grain size.

Abstract: Disclosed herein is a method and apparatus for controlling surface characteristics by measuring capacitance of a process kit ring. The method includes interfacing a ring with a jig assembly for measuring capacitance in at least a first location of the ring. The ring has that includes a top surface, a bottom surface, and an inner surface opposite an outer surface. At least the bottom surface has an external coating placed thereon. The method further includes contacting a measuring device to the first location on the outer surface proximate the bottom surface. The measuring device contacts an opening in the external coating to the body. The measuring device contacts a first conductive member that is electrically coupled to the ring. A capacitance is measured on the measuring device. The capacitance across the top surface is measured.

Abstract: A polishing pad includes: a polishing layer having a polyurethane sheet containing substantially spherical cells, wherein E?(90%)/E?(30%) falls within a range of 0.4 to 0.7, where E?(90%) represents a storage modulus of the polyurethane sheet that has been exposed to an environment with a temperature of 23° C. and a relative humidity of 90%, as measured in a tension mode at 40° C. with an initial load of 148 g, a strain range of 0.1%, and a measurement frequency of 1.6 Hz, and E?(30%) represents a storage modulus of the polyurethane sheet that has been exposed to an environment with a temperature of 23° C. and a relative humidity of 30%, as measured in a tension mode at 40° C. with an initial load of 148 g, a strain range of 0.1%, and a measurement frequency of 1.6 Hz. Also provided is a method for manufacturing the polishing pad.

Abstract: There is provided a method of patterning platinum on a substrate. A platinum layer is deposited on the substrate, and a patterned photoresist layer is formed over the platinum layer leaving partly exposed regions of the platinum layer. An aluminum layer is deposited over the partly exposed regions of the platinum layer. An alloy is formed of aluminum with platinum from the partly exposed regions. The platinum aluminum alloy is etched away leaving a remaining portion of the platinum layer to form a patterned platinum layer on the substrate. In an embodiment, a thin hard mask layer is deposited on the platinum layer on the semiconductor substrate before the patterned photoresist layer is formed.

Abstract: Differences in ion mass of lighter ions (having a higher mobility) and heavier ions are utilized in conjunction with bias voltage modulation of an atomic layer etch (ALE) to provide a fast ALE process. The difference in ion mobility achieves surface modification with reactive neutral species in the absence of a bias voltage, and ion bombardment with lighter ions (e.g., inert or less reactive ions) in the presence of a bias voltage. By modulating the bias voltage, preferential ion bombardment is achieved with lighter ions without the need to physically separate or purge the reactive precursors and inert gases supplied to the process chamber for a given ALE cycle. A “fast” plasma ALE process is provided which improves etch rate, throughput and cost-efficiency by enabling the same gas chemistry composition (e.g., reactive precursor and inert gas combination) to be kept in the process chamber during a given ALE cycle.