Abstract: A single body injector for delivering gases to a surface is provided. The injector is comprised of an elongated member with end surfaces and at least one gas delivery surface extending along the length of the member and which includes a number of elongated passages formed therein. Also formed within the member are a number of thin distribution channels which extend between the elongated passages and the gas delivery surface. In another embodiment of the invention a number of metering tubes may be inserted into each elongated passage and are spaced from the walls of the passages and extend between the ends. Gases are conveyed to the elongated passages, through the distribution channels to the gas delivery surface where they are directed to a desired region where they mix, react and form a uniform thin film on the substrate positioned beneath the injector.

Abstract: In a support for a wafer-shaped object, in particular a silicon wafer, there is an annular nozzle in the surface of the support opposite the wafer-shaped object. The surface of the support includes concentric annular projections for supporting the wafer. Between the projections there is at least one aperture from which a passage extends to a vacuum producing device housed inside the support. As a result of the prevailing vacuum beneath the projections, the object is held in contact with the support and prevented from moving in a direction parallel to the surface, without requiring lateral supports. The compressed gas that creates the vacuum is ejected from the annular nozzle to clean the edges of the wafer-shaped object.

Abstract: A thin-film vapor deposition apparatus has a reaction chamber for holding therein a substrate in an atmosphere isolated from an ambient atmosphere. For depositing a thin film on the substrate, the temperature of an inner wall of the reaction chamber is adjusted to control the temperature of the atmosphere in the reaction chamber, and the temperature of the substrate is also adjusted independently of the temperature of the atmosphere in the reaction chamber, while the substrate is being rotated at a high speed in the reaction chamber. Reactant gases required to deposit a thin film on the substrate are ejected from a reactant gas elector head toward the substrate in the reaction chamber. Remaining and excessive gases are discharged out of the reaction chamber.

Abstract: The present invention provides systems, methods and apparatus for high temperature (at least about 500-800.degree. C.) processing of semiconductor wafers. The systems, methods and apparatus of the present invention allow multiple process steps to be performed in situ in the same chamber to reduce total processing time and to ensure high quality processing for high aspect ratio devices. Performing multiple process steps in the same chamber also increases the control of the process parameters and reduces device damage. In particular, the present invention can provide high temperature deposition, heating and efficient cleaning for forming dielectric films having thickness uniformity, good gap fill capability, high density, low moisture, and other desired characteristics.

Abstract: A cam-based arrangement configured to move a confinement ring along a first axis of a plasma processing chamber. The confinement ring is disposed in a plane that is orthogonal to the first axis. The cam-based arrangement includes a cam ring having a plurality of cam regions formed on a first surface of the cam ring. There is further included a plurality of cam followers in rolling contact with the first surface of the cam ring. There is also included a plurality of plungers oriented parallel to the first axis, each of the plurality of plungers being coupled to one of the plurality of cam followers and to the confinement ring, wherein the plurality of plungers move in an orchestrated manner parallel to the first axis as the cam ring is rotated and the plurality of cam followers stay in the rolling contact with the first surface of the cam ring.

Abstract: Ionizable gas supplied to an electron cyclotron resonance vacuum plasma processor chamber for semiconductor wafers is excited to a plasma state by microwave energy coupled to the chamber. The level of microwave power reflected from the chamber controls the level of microwave power derived from a source driving the ionizable gas in the chamber.

Abstract: A plasma processing apparatus is furnished with a reactor which is furnished with a susceptor 12, a reaction gas delivery mechanism which delivers reaction gas to the inside of the reactor, a pumping mechanism 24 which pumps out an interior of the reactor, and a plasma-generating mechanism. The reactor is made of metal, the plasma-generating mechanism includes an at least single-winding coil 16 which produces an induced electric field, and the coil is established within the reactor and surrounding the plasma-generating space in a state surrounded by dielectrics parts 15 and 17.

Abstract: The end of a cleaning process of a vacuum workpiece processing chamber evacuated to a constant pressure vacuum condition is controlled. The chamber is cleaned by exciting a cleaning gas to a plasma state by a field including an electric component. The process is terminated in response to detection of a substantial decrease in the time rate of change of pressure in a foreline of a vacuum pump evacuating the chamber after the plasma electrical impedance has been stabilized. The substantial decrease signals that the chamber is clean. A horn in the chamber that excites the gas to a plasma is indicated as being clean when the plasma electrical impedance is stable. The indication of plasma impedance stabilization is derived by monitoring horn DC bias voltage, or one or both variable reactances of a matching network connected between the horn and an r.f. excitation source for the horn.

Abstract: An apparatus for forming a film on a substrate includes a gas inlet and an insert attached to the gas inlet, the insert including a deposition source material such as lithium. To form the film on the substrate, the substrate is mounted in a vacuum chamber. After the vacuum chamber is pumped clown to a subatmospheric pressure, a first process gas such as argon is provided through the gas inlet and insert and into a plasma region proximate the substrate. Power is then coupled to generate a plasma inside of the insert which heats the insert and causes the deposition source material to vaporize. The deposition source material vapor is mixed with a plasma polymerizable material in the plasma region proximate the substrate causing a plasma enhanced chemical vapor deposition (PECVD) thin film such as silicon oxide including the deposition source material (e.g. lithium) to be deposited on the substrate.

Abstract: A temperature control system 10 is used to control the temperature of a chamber surface 15, such as a convoluted external surface, of a process chamber 25 that is used to process a semiconductor substrate 30. The temperature control system 10 comprises a vapor chamber 100 that forms an enclosure adjoining or surrounding the process chamber surface 15. A fluid distributor 115 in the vapor chamber 100 applies a fluid film 130 onto the process chamber surface 15. Vaporization of the fluid film 130 from the chamber surface 15 controls the temperature of the chamber surface. Optionally, a vent 165 in the vapor chamber 100 can be used to adjust the vaporization temperature of the fluid in the vapor chamber.

Abstract: A chemical vapor deposition system is provided. The chemical vapor deposition system is used to deposit an inorganic layer on a silicon wafer. The chemical vapor deposition system includes a reactor chamber, a particle trap, a gate valve, and a vacuum system. The vacuum system forces a gas out of the reactor chamber and through the particle trap and the gate valve. When the gate valve opens and closes, particles inside the valve can contaminate the reactor chamber and the vacuum system. The particle trap has a reservoir in which particles in the gas may become trapped before they reach the gate valve. The particle trap helps prevent the particles from becoming trapped in the gate valve.

Abstract: An apparatus and method for depositing thin films on the surface of a device such as a spherical shaped devices. The apparatus includes an enclosure containing a plurality of apertures and a conductor coil. The apertures connect to conduits for inputting and outputting the devices as well as injecting and releasing different gases and/or processing constituents. A chamber is formed within the enclosure and is configured to be coaxial with the conductor coil. Devices move through the input conduit where they are preheated by a resistance-type furnace. The preheated devices then move into the chamber where they are further heated by radio frequency energy from the conductor coil. At this time, the gases and/or processing constituents react with the heated device thereby growing a thin film on its outer surface.

Abstract: The present disclosure pertains to a method for plasma etching a semiconductor patterning stack. The patterning stack includes at least one layer comprising either a dielectric-comprising antireflective material or an oxygen-comprising material. In many instances the dielectric-comprising antireflective material will be an oxygen-comprising material, but it need not be limited to such materials. In one preferred embodiment of the method, the chemistry enables the plasma etching of both a layer of the dielectric-comprising antireflective material or oxygen-comprising material and an adjacent or underlying layer of material. In another preferred embodiment of the method, the layer of dielectric-comprising antireflective material or oxygen-comprising material is etched using one chemistry, while the adjacent or underlying layer is etched using another chemistry, but in the same process chamber.

Abstract: An electron beam source provides beam focusing by placing magnets under the crucible. The location of the magnets, operating in conjunction with the remaining magnetic and electromagnetic structure, permits varying sizes of crucibles to be used without redesign of the remainder of the electron beam source.

Abstract: A method for the manufacture of highly-integrated circuits on a semiconductor substrate includes applying coatings to front and back sides of a wafer of semiconductor material in at least one deposition process, and subsequently removing the coating on the back of the wafer by etching being carried out with the front of the wafer being free of lacquer. The etching is performed in a process chamber in which reactive particles produced in a plasma only reach the back of the wafer, while advances of the reactive particles toward the front of the wafer are prevented by a protective neutral gas.

Abstract: Apparatus for monitoring the hydrogen peroxide concentration in a sulfuric acid bath used to remove photoresist from semiconductor wafers uses the amount of bubbles in the fluid mixture to signal the addition of hydrogen peroxide. The bubbles are directly related to the hydrogen peroxide in sulfuric acid mixture. The bubbles are sensed by a light source and photoelectric sensor connected to a threshold adjustment control which controls a metering solenoid valve to add hydrogen peroxide from a reservoir to the bath when the bubbles decrease.

Abstract: A catheter with at least one integrated lumen and methods of its manufacture and use are provided. A method of manufacture includes: (1) covering a primary mandrel with a first layer, (2) disposing a second layer on the first layer, wherein the second layer has at least one removable secondary mandrel substantially embedded therein, (3) fusing the first layer to the second layer, (4) removing the secondary mandrel from the second layer to form a secondary lumen, and (5) removing the primary mandrel from the first layer to form a primary lumen. The method may further include forming an inflatable balloon at the surface of the second layer where the secondary lumen forms an opening. Also, auxiliary apparatus, such as snare instruments and bundles of optical fibers, may be inserted through the secondary lumen before or during use of the catheter.

Abstract: A method for six-sided painting of parts, such as boards, the parts having a top, bottom, sides, and ends, in a vacuum painting system having a feed conveyor, a vacuum painting chamber, and a take-out conveyor wherein the a first part is placed end-to-end with a second part on the feed conveyor, each part having a leading end and a trailing end, and the first part and second part enter the vacuum painting chamber end-to-end, the parts exiting the vacuum painting chamber onto the take-out conveyor end-to-end with the leading end of each part exiting the vacuum painting chamber first, consisting of the steps of:(a) sensing the presence of the leading end of the first part along the take-out conveyor while the trailing end of the first part is within the vacuum painting chamber;(b) moving a movable carriage along the take-out conveyor toward the vacuum painting chamber to a position intermediate the leading end and trailing end of the first part;(c) moving the movable carriage a short distance along the take-out

Abstract: A method for preparing a sample for its optical analysis in the manufacture of a semiconductor device includes the step of drying a liquid formed on the semiconductor wafer until the concentration of contaminants contained in the liquid is of a sufficiently high level for the optical analyzer to adequately detect the contaminants. The liquid may be of a film formed on the wafer and dissolved into liquid drops, or deionized water or various chemicals to which the wafer is exposed during a manufacturing process. The apparatus includes a chuck for bringing the wafer into and out of a processing chamber, a guide for guiding the chuck, a piston cylinder for driving the chuck along the guide to a processing position, and a gas supplying system which directs nitrogen gas onto the wafer for drying the liquid. Appropriate controls are provided so that the apparatus can be operated automatically or manually.

Abstract: A method for producing a thin semiconductor film according to the present invention includes the steps of: placing a group-IV compound or a derivative thereof in a plasma state; decomposing the group-IV compound or the derivative thereof into active species; and depositing the active species on a substrate, wherein energy for generating plasma is intermittently supplied at a supply time interval which is equal to or less than a reciprocal of {(secondary reaction rate constant of a source gas reacting with active species other than long-life active species within the plasma).times.(number of source gas molecules)}.