Abstract: An optoelectronic lII-V or II-VI semiconductor device comprises a thin film coating with optical characteristics providing low midgap interface state density. A field effect device for inversion channel applications on III-V semiconductors also comprises a thin dielectric film providing required interface characteristics. The thin film is also applicable to passivation of states on exposed surfaces of electronic III-V devices. The thin film comprises a uniform, homogeneous, dense, stoichiometric gallium oxide (Ga.sub.2 O.sub.3) dielectric thin film, fabricated by electron-beam evaporation of a single crystal, high purity Gd.sub.3 Ga.sub.5 O.sub.12 complex compound on semiconductor substrates kept at temperatures ranging from 40.degree. to 370.degree. C. and at background pressures at or above 1.times.10.sup.-10 Torr.

Abstract: In a gaseous glow-discharge process for coating a substrate with semiconductor material, a variable electric field in the region of the substrate and the pressure of the gaseous material are controlled to produce a uniform coating having useful semiconducting properties. Electrodes having concave and cylindrical configurations are used to produce a spacially varying electric field. Twin electrodes are used to enable the use of an AC power supply and collect a substantial part of the coating on the substrate. Solid semiconductor material is evaporated and sputtered into the glow discharge to control the discharge and improve the coating. Schottky barrier and solar cell structures are fabricated from the semiconductor coating. Activated nitrogen species is used to increase the barrier height of Schottky barriers.

Abstract: This invention relates to a method of preparing highly insulating GaN single crystal films in a molecular beam epitaxial growth chamber. A single crystal substrate is provided with the appropriate lattice match for the desired crystal structure of GaN. A molecular beam source of Ga and source of activated atomic and ionic nitrogen are provided within the growth chamber. The desired film is deposited by exposing the substrate to Ga and nitrogen sources in a two step growth process using a low temperature nucleation step and a high temperature growth step. The low temperature process is carried out at 100.degree.-400.degree. C. and the high temperature process is carried out at 600.degree.-900.degree. C. The preferred source of activated nitrogen is an electron cyclotron resonance microwave plasma.

Abstract: The present invention relates to a semiconductor device which exposes a P-N junction portion in mesa groove to attain high reverse voltage blocking ability and a method of manufacturing the same. The mesa groove is provided in the form of a ring, and a section thereof is finished in positive bevel configuration being increased in width from a major surface toward an inner portion. Thus, a surface electric field of the mesa groove is weakened to attain high reverse voltage blocking ability, while the mesa groove of positive beveled structure can be accurately formed by employing a drill provided with a cutting edge having a mesa type sectional configuration.