Patents Examined by Christopher G. Young
  • Patent number: 10663855
    Abstract: The present disclosure relates to a photoetching parameter adjustment method, apparatus and mask plate, in the field of photoetching technology. The method comprises: forming a photoresist pattern on a first substrate by a photoetching process, wherein the photoresist pattern comprises a photoetching detection pattern; judging whether photoetching parameters of the photoetching process need to be adjusted or not in accordance with the photoetching detection pattern; and adjusting the photoetching parameters when the photoetching parameters need to be adjusted. The present disclosure solves the problem that the reliability of the photoetching parameters is low and improves the reliability of the photoetching parameters. The present disclosure is used for adjusting photoetching parameters.
    Type: Grant
    Filed: December 1, 2017
    Date of Patent: May 26, 2020
    Assignee: BOE Technology Group Co., Ltd.
    Inventors: Wusheng Li, Zhanfeng Cao
  • Patent number: 10663868
    Abstract: The present disclosure, in some embodiments, relates to a photolithography tool. The photolithography tool includes an illumination source configured to generate electromagnetic radiation and projection optics configured to focus the electromagnetic radiation onto a photosensitive material overlying a substrate according to a pattern on a photomask. A dynamic focal element is configured to dynamically change positions at which the electromagnetic radiation is focused over the substrate during exposure of the photosensitive material. The positions at which the electromagnetic radiation is focused define a plurality of depths of focus. The plurality of depths of focus respectively span a different spatial region within the photosensitive material that is smaller than a thickness of the photosensitive material.
    Type: Grant
    Filed: November 28, 2018
    Date of Patent: May 26, 2020
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Jun-Yih Yu, De-Fang Huang, De-Chen Tseng, Jia-Feng Chang, Li-Fang Hsu
  • Patent number: 10663856
    Abstract: An optical mask for use in a photolithography process, a method for fabricating the optical mask, and a method for fabricating an array of patterns on a substrate using the optical mask, wherein the optical mask includes an array of microstructures disposed on a mask substrate, and wherein the array of microstructures is arranged to transform a uniform optical exposure passing therethrough to an array of optical exposure patterns.
    Type: Grant
    Filed: August 24, 2017
    Date of Patent: May 26, 2020
    Assignee: City University of Hong Kong
    Inventors: Johnny Chung Yin Ho, Ming Fang, Lei Shu
  • Patent number: 10656535
    Abstract: A method and apparatus is disclosed for monitoring critical dimensions in a pattern of 1-dimensional and/or 2-dimensional features, produced on a substrate in a process step that is part of or related to a manufacturing process for producing a semiconductor device, the process step being performed in accordance with a predefined pattern design, wherein one or more metrology targets (1) are added to the pattern design. The targets comprise one or more versions of an asymmetric metrology mark, each version of the mark comprising a uniform portion (2) and a periodic portion (3), the latter comprising a regular array of parallel line-shaped features or an array of 2-dimensional features. The design width of the features is situated in a range situated around a nominal design width w0. A position-related parameter S is defined that is essentially proportional to the design widths in the range.
    Type: Grant
    Filed: March 28, 2018
    Date of Patent: May 19, 2020
    Assignee: IMEC VZW
    Inventors: Christopher Ausschnitt, Vincent Truffert
  • Patent number: 10656516
    Abstract: A photomask blank including a transparent substrate, and at least one film (A) containing chromium and free of silicon and at least one film (B) containing silicon, and oxygen or oxygen and nitrogen, and free of a transition metal that are contacted to each other In the blank, when an intension of secondary ions is measured along a thickness direction of the films by a time-of-flight secondary ion mass spectrometry (TOF-SIMS), an intension of secondary ions derived from Cr2O5 is lower than an intension of secondary ions derived from Cr, at a position located at the interface or its vicinity of the film (A) and film (B) and having a maximum intensity of secondary ions derived from SiCrO5.
    Type: Grant
    Filed: December 20, 2017
    Date of Patent: May 19, 2020
    Assignee: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Takuro Kosaka, Yukio Inazuki
  • Patent number: 10649326
    Abstract: There is provided a pellicle frame and a pellicle using the frame, which has a hollow space inside a corner portion of the frame and optionally one or more hollow spaces in a straight portion (bar) of the frame, and also a hollow space in a corner portion of the frame may communicate with a neighboring hollow space in a straight portion of the frame.
    Type: Grant
    Filed: December 22, 2017
    Date of Patent: May 12, 2020
    Assignee: SHIN-ETSU CHEMICAL CO., LTD.
    Inventor: Akinori Nishimura
  • Patent number: 10649335
    Abstract: A substrate processing method, includes acquiring a height distribution along a radial direction of a substrate in a peripheral edge portion of a front surface of the substrate, forming an underlayer film on the entire front surface of the substrate so as to correct a drop of a height of the peripheral edge portion based on the height distribution, and forming a resist film on the entire surface of the underlayer film.
    Type: Grant
    Filed: August 26, 2016
    Date of Patent: May 12, 2020
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Teruhiko Kodama, Masashi Enomoto, Masahide Tadokoro, Takafumi Hashimoto
  • Patent number: 10642149
    Abstract: A reflective mask blank capable of obtaining high contrast at the edges of a phase shift film pattern. Provided is a reflective mask blank comprising a multilayer reflective film and a phase shift film that shifts the phase of EUV light formed in that order on a substrate, wherein root mean square roughness (Rms), obtained by measuring a 1 ?m×1 ?m region on the surface of the phase shift film with an atomic force microscope, is not more than 0.50 nm, and power spectrum density at a spatial frequency of 10 to 100 ?m?1 is not more than 17 nm4.
    Type: Grant
    Filed: July 5, 2019
    Date of Patent: May 5, 2020
    Assignee: HOYA CORPORATION
    Inventors: Kazuhiro Hamamoto, Yohei Ikebe
  • Patent number: 10642148
    Abstract: The present disclosure provides an embodiment of a reflective mask that includes a substrate; a reflective multilayer disposed on the substrate; an anti-oxidation barrier layer disposed on the reflective multilayer and the anti-oxidation barrier layer is in amorphous structure with an average interatomic distance less than an oxygen diameter; and an absorber layer disposed on the anti-oxidation barrier layer and patterned according to an integrated circuit layout.
    Type: Grant
    Filed: August 27, 2018
    Date of Patent: May 5, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chia-Hao Yu, Chi-Lun Lu, Chih-Tsung Shih, Ching-Wei Shen, Jeng-Horng Chen
  • Patent number: 10634990
    Abstract: The present invention provides a halftone mask comprising an assist pattern and a manufacturing method of the halftone mask, which uses an ArF excimer laser as an exposing source, is used for a projection exposure by an off axis illumination, does not resolve the as pattern while keeping the focal depth magnification effect as the assist pattern, and may form a transferred image having high contrast of a main pattern.
    Type: Grant
    Filed: July 11, 2019
    Date of Patent: April 28, 2020
    Assignee: DAI NIPPON PRINTING CO., LTD.
    Inventors: Takaharu Nagai, Hiroshi Mohri, Yasutaka Morikawa, Katsuya Hayano
  • Patent number: 10627729
    Abstract: A first substrate (2002) has a calibration pattern applied to a first plurality of fields (2004) by a lithographic apparatus. Further substrates (2006, 2010) have calibration patterns applied to further pluralities of fields (2008, 2012). The different pluralities of fields have different sizes and/or shapes and/or positions. Calibration measurements are performed on the patterned substrates (2002, 2006, 2010) and used to obtain corrections for use in controlling the apparatus when applying product patterns to subsequent substrates. Measurement data representing the performance of the apparatus on fields of two or more different dimensions (2004, 2008, 2012) is gathered together in a database (2013) and used to synthesize the information needed to calibrate the apparatus for a new size. Calibration data is also obtained for different scan and step directions.
    Type: Grant
    Filed: May 27, 2016
    Date of Patent: April 21, 2020
    Assignee: ASML Netherlands B.V.
    Inventors: Emil Peter Schmitt-Weaver, Jens Stäcker, Koenraad Remi André Maria Schreel, Roy Werkman
  • Patent number: 10620527
    Abstract: Disclosed is a mask blank substrate for use in lithography, wherein a main surface of the substrate satisfies a relational equation of (BA70?BA30)/(BD70?BD30)?350(%/nm), and has a maximum height (Rmax)?1.2 nm in a relation between a bearing area (%) and a bearing depth (nm) obtained by measuring, with an atomic force microscope, an area of 1 ?m×1 ?m in the main surface on the side of the substrate where a transfer pattern is formed, wherein BA30 is defined as a bearing area of 30%, BA70 is defined as a bearing area of 70%, and BD70 and BD30 are defined to respectively represent bearing depths for the bearing area of 30% and the bearing area of 70%.
    Type: Grant
    Filed: August 9, 2019
    Date of Patent: April 14, 2020
    Assignee: HOYA CORPORATION
    Inventors: Kazuhiro Hamamoto, Toshihiko Orihara, Hirofumi Kozakai, Youichi Usui, Tsutomu Shoki, Junichi Horikawa
  • Patent number: 10620530
    Abstract: Examples of a multiple-mask multiple-exposure lithographic technique and suitable masks are provided herein. In some examples, a photomask includes a die area and a stitching region disposed adjacent to the die area and along a boundary of the photomask. The stitching region includes a mask feature for forming an integrated circuit feature and an alignment mark for in-chip overlay measurement.
    Type: Grant
    Filed: November 1, 2017
    Date of Patent: April 14, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Peter Yu, Chih-Tung Hsu, Kevin Wang, Chih-Chia Hu, Roger Chen
  • Patent number: 10613441
    Abstract: The present invention relates to an electron beam (eBeam) resist composition, particularly an (eBeam) resist composition for use in the fabrication of integrated circuits. Such resist compositions include an anti-scattering compound which minimises scattering and secondary electron generation, thus affording extremely high resolution lithography. Such high resolution lithography may be used directly upon silicon-based substrates to produce integrated circuits, or may alternatively be used to produce a lithographic mask (e.g. photomask) to facilitate high-resolution lithography.
    Type: Grant
    Filed: November 20, 2018
    Date of Patent: April 7, 2020
    Assignee: The University of Manchester
    Inventors: Scott Lewis, Richard Winpenny, Stephen Yeates
  • Patent number: 10606169
    Abstract: The purpose of the present invention is to provide: a pellicle frame which is not susceptible to deterioration even if irradiated with short-wavelength light such as excimer light, and which is not susceptible to generation of an outgas or foreign substance; and a pellicle which uses this pellicle frame. In order to achieve the above-described purpose, this pellicle frame for supporting the outer periphery of a pellicle film is configured to comprise a frame and a film that is formed on the surface of the frame and contains a polyimide resin.
    Type: Grant
    Filed: August 15, 2016
    Date of Patent: March 31, 2020
    Assignee: MITSUI CHEMICALS, INC.
    Inventors: Kazuo Kohmura, Takashi Kozeki, Daiki Taneichi, Shintaro Maekawa, Yosuke Ono, Tsuneaki Biyajima
  • Patent number: 10606164
    Abstract: Provided is a mask blank with a phase shift film having a function to transmit ArF exposure light at a predetermined transmittance and a function to generate a predetermined phase difference to the transmitting ArF exposure light, and having high ArF light fastness. The phase shift film has a function to transmit ArF exposure light at 2% or more transmittance and a function to generate a phase difference of 150 degrees or more and 180 degrees or less to the transmitting ArF exposure light; a lower layer and an upper layer are stacked from a substrate side; the lower layer is formed from silicon or silicon containing one or more elements selected from nonmetallic elements other than oxygen and semimetal elements; the upper layer other than a surface layer is formed from silicon and nitrogen or a material consisting of silicon, nitrogen and one or more elements selected from nonmetallic elements excluding oxygen and semimetal elements; the lower layer has refractive index n of less than 1.
    Type: Grant
    Filed: September 20, 2018
    Date of Patent: March 31, 2020
    Assignee: HOYA CORPORATION
    Inventors: Osamu Nozawa, Hiroaki Shishido, Takenori Kajiwara
  • Patent number: 10606166
    Abstract: A substrate with an electrically conductive film for fabricating a reflective mask is obtained that is capable of preventing positional shift of the reflective mask during pattern transfer. Provided is a substrate with an electrically conductive film used in lithography, the substrate with an electrically conductive film having an electrically conductive film formed on one of the main surfaces of a mask blank substrate, and a coefficient of static friction of the surface of the electrically conductive film is not less than 0.25.
    Type: Grant
    Filed: June 8, 2016
    Date of Patent: March 31, 2020
    Assignee: HOYA CORPORATION
    Inventors: Takumi Kobayashi, Kazuhiro Hamamoto, Tatsuo Asakawa, Tsutomu Shoki
  • Patent number: 10599038
    Abstract: Provided are a rinsing liquid which is used for rinsing a resist film obtained from an actinic ray-sensitive or radiation-sensitive composition and includes a hydrocarbon-based solvent having a branched alkyl group. The hydrocarbon-based solvent having a branched alkyl group contains at least one of isodecane or isododecane.
    Type: Grant
    Filed: December 21, 2017
    Date of Patent: March 24, 2020
    Assignee: FUJIFILM Corporation
    Inventors: Hideaki Tsubaki, Toru Tsuchihashi, Wataru Nihashi
  • Patent number: 10599031
    Abstract: A glass substrate for a mask blank includes a first surface and a second surface. The first surface and second surface face each other. Each of the first surface and the second surface is approximately square having a vertical length and a horizontal length being equal to the vertical length. The first surface of the glass substrate has specific profile properties.
    Type: Grant
    Filed: January 29, 2018
    Date of Patent: March 24, 2020
    Assignee: AGC Inc.
    Inventor: Yuzo Okamura
  • Patent number: 10571800
    Abstract: A method comprising the steps of receiving a mask assembly comprising a mask and a removable EUV transparent pellicle held by a pellicle frame, removing the pellicle frame and EUV transparent pellicle from the mask, using an inspection tool to inspect the mask pattern on the mask, and subsequently attaching to the mask an EUV transparent pellicle held by a pellicle frame. The method may also comprise the following steps: after removing the pellicle frame and EUV transparent pellicle from the mask, attaching to the mask an alternative pellicle frame holding an alternative pellicle formed from a material which is substantially transparent to an inspection beam of the inspection tool; and after using an inspection tool to inspect the mask pattern on the mask, removing the alternative pellicle held by the alternative pellicle frame from the mask in order to attach to the mask the EUV transparent pellicle held by the pellicle frame.
    Type: Grant
    Filed: February 1, 2016
    Date of Patent: February 25, 2020
    Assignee: ASML Netherlands B.V.
    Inventors: Derk Servatius Gertruda Brouns, Dennis De Graaf, Robertus Cornelis Martinus De Kruif, Paul Janssen, Matthias Kruizinga, Arnoud Willem Notenboom, Daniel Andrew Smith, Beatrijs Louise Marie-Joseph Katrien Verbrugge, James Norman Wiley