Patents Examined by Christopher G. Young
  • Patent number: 11029595
    Abstract: A method comprising the steps of receiving a mask assembly comprising a mask and a removable EUV transparent pellicle held by a pellicle frame, removing the pellicle frame and EUV transparent pellicle from the mask, using an inspection tool to inspect the mask pattern on the mask, and subsequently attaching to the mask an EUV transparent pellicle held by a pellicle frame. The method may also comprise the following steps: after removing the pellicle frame and EUV transparent pellicle from the mask, attaching to the mask an alternative pellicle frame holding an alternative pellicle formed from a material which is substantially transparent to an inspection beam of the inspection tool; and after using an inspection tool to inspect the mask pattern on the mask, removing the alternative pellicle held by the alternative pellicle frame from the mask in order to attach to the mask the EUV transparent pellicle held by the pellicle frame.
    Type: Grant
    Filed: December 9, 2019
    Date of Patent: June 8, 2021
    Assignee: ASML Netherlands B.V.
    Inventors: Derk Servatius Gertruda Brouns, Dennis De Graaf, Robertus Cornelis Martinus De Kruif, Paul Janssen, Matthias Kruizinga, Arnoud Willem Notenboom, Daniel Andrew Smith, Beatrijs Louise Marie-Joseph Katrien Verbrugge, James Norman Wiley
  • Patent number: 11022896
    Abstract: Corrections are calculated for use in controlling a lithographic apparatus. Using a metrology apparatus a performance parameter is measured at sampling locations across one or more substrates to which a lithographic process has previously been applied. A process model is fitted to the measured performance parameter, and an up-sampled estimate is provided for process-induced effects across the substrate. Corrections are calculated for use in controlling the lithographic apparatus, using an actuation model and based at least in part on the fitted process model. For locations where measurement data is available, this is added to the estimate to replace the process model values. Thus, calculation of actuation corrections is based on a modified estimate which is a combination of values estimated by the process model and partly on real measurement data.
    Type: Grant
    Filed: February 22, 2017
    Date of Patent: June 1, 2021
    Assignee: ASML Netherlands B.V.
    Inventors: Emil Peter Schmitt-Weaver, Amir Bin Ismail, Kaustuve Bhattacharyya, Paul Derwin
  • Patent number: 11016391
    Abstract: According to one embodiment, a first test process concerning a light-exposure process is performed by forming a first lower layer and a first upper layer on a first substrate. A second test process concerning a light-exposure process is performed by forming a second lower layer and a second upper layer on a second substrate. A correction model is created on a basis of results obtained in the first test process and the second test process. A manufacturing process is performed by forming a third lower layer and a third upper layer on a third substrate. In the manufacturing process, an overlay estimation correction value is calculated by using the correction model, based on a first pattern position deviation amount, a step processing history in the manufacturing process, a second pattern position deviation amount, and an overlay residual, and the overlay estimation correction value is used in a light-exposure process.
    Type: Grant
    Filed: February 28, 2019
    Date of Patent: May 25, 2021
    Assignee: TOSHIBA MEMORY CORPORATION
    Inventor: Kazuhiro Segawa
  • Patent number: 11009803
    Abstract: A mask assembly suitable for use in a lithographic process, the mask assembly comprising a patterning device; and a pellicle frame configured to support a pellicle and mounted on the patterning device with a mount; wherein the mount is configured to suspend the pellicle frame relative to the patterning device such that there is a gap between the pellicle frame and the patterning device; and wherein the mount provides a releasably engageable attachment between the patterning device and the pellicle frame.
    Type: Grant
    Filed: September 30, 2019
    Date of Patent: May 18, 2021
    Assignees: ASML Netherlands B.V., ASML Holding N.V.
    Inventors: Matthias Kruizinga, Maarten Mathijs Marinus Jansen, Jorge Manuel Azeredo Lima, Erik Willem Bogaart, Derk Servatius Gertruda Brouns, Marc Bruijn, Richard Joseph Bruls, Jeroen Dekkers, Paul Janssen, Mohammad Reza Kamali, Ronald Harm Gunther Kramer, Robert Gabriël Maria Lansbergen, Martinus Hendrikus Antonius Leenders, Matthew Lipson, Erik Roelof Loopstra, Joseph H. Lyons, Stephen Roux, Gerrit Van Den Bosch, Sander Van Den Heijkant, Sandra Van Der Graaf, Frits Van Der Meulen, Jérôme François Sylvain Virgile Van Loo, Beatrijs Louise Marie-Joseph Katrien Verbrugge
  • Patent number: 11003100
    Abstract: In a beam irradiation apparatus in which a movable body holds an object, a mark detection system detects a first mark on the movable body while moving the movable body in a first direction and changing an irradiation position of a measurement beam in the first direction, the mark detection system detects a second mark while moving the movable body in the first direction and changing the irradiation position of the measurement beam in the first direction, a controller controls a position of the movable body in a second direction intersecting the first direction during a time period between the detection of the first mark and the detection of the second mark, and the controller controls the movement of the movable body to adjust a positional relation between the object on the movable body and a processing beam, based on results of the detection of the first and second marks.
    Type: Grant
    Filed: November 29, 2019
    Date of Patent: May 11, 2021
    Assignee: NIKON CORPORATION
    Inventor: Akihiro Ueda
  • Patent number: 11003068
    Abstract: Provided are a reflective mask blank, having a phase shift film having little dependence of phase difference and reflectance on film thickness, and a reflective mask. The reflective mask blank is characterized in that the phase shift film is composed of a material comprised of an alloy having two or more types of metal so that reflectance of the surface of the phase shift film is more than 3% to not more than 20% and so as to have a phase difference of 170 degrees to 190 degrees, and when a group of metal elements that satisfies the refractive index n and the extinction coefficient k of k>?*n+? is defined as Group A and a group of metal elements that satisfies the refractive index n and the extinction coefficient k of k<?*n+? is defined as Group B, the alloy is such that the composition ratio is adjusted so that the amount of change in the phase difference is within the range of ±2 degrees and the amount of change in reflectance is within the range of ±0.
    Type: Grant
    Filed: February 20, 2018
    Date of Patent: May 11, 2021
    Assignee: HOYA CORPORATION
    Inventors: Yohei Ikebe, Tsutomu Shoki, Takahiro Onoue, Hirofumi Kozakai
  • Patent number: 11003069
    Abstract: The present disclosure provides an embodiment of a reflective mask that includes a substrate; a reflective multilayer disposed on the substrate; an anti-oxidation barrier layer disposed on the reflective multilayer and the anti-oxidation barrier layer is in amorphous structure with an average interatomic distance less than an oxygen diameter; and an absorber layer disposed on the anti-oxidation barrier layer and patterned according to an integrated circuit layout.
    Type: Grant
    Filed: May 4, 2020
    Date of Patent: May 11, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chia-Hao Yu, Chi-Lun Lu, Chih-Tsung Shih, Ching-Wei Shen, Jeng-Horng Chen
  • Patent number: 11003098
    Abstract: Tooling for a mask assembly suitable for use in a lithographic process, the mask assembly comprising a patterning device; and a pellicle frame configured to support a pellicle and mounted on the patterning device with a mount; wherein the mount provides a releasably engageable attachment between the patterning device and the pellicle frame.
    Type: Grant
    Filed: November 18, 2019
    Date of Patent: May 11, 2021
    Assignee: ASML Netherlands B.V
    Inventors: Frits Van Der Meulen, Maarten Mathijs Marinus Jansen, Jorge Manuel Azeredo Lima, Derk Servatius Gertruda Brouns, Marc Bruijn, Jeroen Dekkers, Paul Janssen, Ronald Harm Gunther Kramer, Matthias Kruizinga, Robert Gabriël Maria Lansbergen, Martinus Hendrikus Antonius Leenders, Erik Roelof Loopstra, Gerrit Van Den Bosch, Jérôme François Sylvain Virgile Van Loo, Beatrijs Louise Marie-Joseph Katrien Verbrugge, Angelo Cesar Peter De Klerk, Jacobus Maria Dings, Maurice Leonardus Johannes Janssen, Roland Jacobus Johannes Kerstens, Martinus Jozef Maria Kester, Michel Loos, Geert Middel, Silvester Matheus Reijnders, Frank Johannes Christiaan Theuerzeit, Anne Johannes Wilhelmus Van Lievenoogen
  • Patent number: 11003089
    Abstract: The present disclosure, in some embodiments, relates to a method of performing a photolithography process. The method includes forming a photosensitive material over a substantially flat upper surface of a substrate. The substantially flat upper surface of the substrate extends between opposing sides of the substrate. The photosensitive material is exposed to electromagnetic radiation at a plurality of depths of focus that are centered at different heights over the substrate. The photosensitive material is developed to remove a part of the photosensitive material.
    Type: Grant
    Filed: April 16, 2020
    Date of Patent: May 11, 2021
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Jun-Yih Yu, De-Fang Huang, De-Chen Tseng, Jia-Feng Chang, Li-Fang Hsu
  • Patent number: 10996558
    Abstract: Examples of a multiple-mask multiple-exposure lithographic technique and suitable masks are provided herein. In some examples, a photomask includes a die area and a stitching region disposed adjacent to the die area and along a boundary of the photomask. The stitching region includes a mask feature for forming an integrated circuit feature and an alignment mark for in-chip overlay measurement.
    Type: Grant
    Filed: October 21, 2019
    Date of Patent: May 4, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Peter Yu, Chih-Tung Hsu, Kevin Wang, Chih-Chia Hu, Roger Chen
  • Patent number: 10996554
    Abstract: A substrate with an electrically conductive film for fabricating a reflective mask is obtained that is capable of preventing positional shift of the reflective mask during pattern transfer. Provided is a substrate with an electrically conductive film used in lithography, the substrate with an electrically conductive film having an electrically conductive film formed on one of the main surfaces of a mask blank substrate, and a coefficient of static friction of the surface of the electrically conductive film is not less than 0.25.
    Type: Grant
    Filed: February 20, 2020
    Date of Patent: May 4, 2021
    Assignee: HOYA CORPORATION
    Inventors: Takumi Kobayashi, Kazuhiro Hamamoto, Tatsuo Asakawa, Tsutomu Shoki
  • Patent number: 10969678
    Abstract: The invention relates to a system (2) for producing an optical mask (35) for surface treatment, in particular surface microtexturing, said system (2) comprising: a layer of material (20) which has an outer surface (21) that is exposed to the outside environment; and a generating and depositing device for generating and depositing droplets (30) on the outer surface (21) of the layer of material (20) in which a specific arrangement (31), forming the optical mask (35) on the outer surface (21) of the layer of material (20). The invention also relates to a treatment plant comprising a system (2) of said type. The invention further relates to a method for producing a mask as well as to a method for surface treatment.
    Type: Grant
    Filed: June 21, 2017
    Date of Patent: April 6, 2021
    Assignees: H.E.F., Universite Jean Monnet Saint Etienne, Centre National De La Recherche Scientifique (CNRS)
    Inventors: Maxime Bichotte, Yves Jourlin, Laurent Dubost
  • Patent number: 10969679
    Abstract: The invention relates to a system (2) for producing an optical mask (35) for surface microtexturing, said system (2) comprising: a substrate (10) having a surface (11) that is to be textured; a layer of material (20) which covers the surface (11) of the substrate (10) and has an outer surface (21) that is exposed to the outside environment; and a generating and depositing device for generating and depositing droplets (30) on the outer surface (21) of the layer of material (20), in a specific arrangement (31) under condensation, forming the optical mask (35) on the outer surface (21) of the layer of material (20). The invention also relates to a treatment plant comprising a system (2) of said type. The invention further relates to a method for producing a mask as well as to a surface microtexturing method.
    Type: Grant
    Filed: June 21, 2017
    Date of Patent: April 6, 2021
    Assignees: H.E.F., Universite Jean Monnet Saint Etienne, Centre National De La Recherche Scientifique (CNRS)
    Inventors: Maxime Bichotte, Yves Jourlin, Laurent Dubost
  • Patent number: 10962874
    Abstract: A method of manufacturing a semiconductor device includes performing extreme ultraviolet (EUV) lithography that uses a mask for the EUV lithography manufactured by using a design layout on which optical proximity correction (OPC) is performed, and performing the OPC includes dividing respective patterns included in the design layout into partial patterns, classifying the partial patterns into a plurality of partial pattern groups, performing a first OPC on the design layout, and performing a second OPC that is different from the first OPC on the design layout on which the first OPC is performed, wherein performing the first OPC is performed on representative patterns selected from the plurality of partial pattern groups.
    Type: Grant
    Filed: April 12, 2019
    Date of Patent: March 30, 2021
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Akio Misaka, No-young Chung, Ki-soo Kim
  • Patent number: 10962881
    Abstract: A method for lithography in semiconductor fabrication is provided. The method includes placing a semiconductor wafer having a plurality of exposure fields over a wafer stage. The method further includes projecting an extreme ultraviolet (EUV) light over the semiconductor wafer. The method also includes securing the semiconductor wafer to the wafer stage by applying a first adjusted voltage to an electrode of the wafer stage while the EUV light is projected to a first group of the exposure fields of the semiconductor wafer. The first adjusted voltage is in a range from about 1.6 kV to about 3.2 kV.
    Type: Grant
    Filed: June 27, 2018
    Date of Patent: March 30, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Cheng-Kuan Wu, Po-Chung Cheng, Li-Jui Chen, Chih-Tsung Shih
  • Patent number: 10962892
    Abstract: A method of performing a lithography process includes providing a test pattern. The test pattern includes a first set of lines arranged at a first pitch, a second set of lines arranged at the first pitch, and further includes at least one reference line between the first set of lines and the second set of lines. The test pattern is exposed with a radiation source providing an asymmetric, monopole illumination profile to form a test pattern structure on a substrate. The test pattern structure is then measured and a measured distance correlated to an offset of a lithography parameter. A lithography process is adjusted based on the offset of the lithography parameter.
    Type: Grant
    Filed: December 20, 2018
    Date of Patent: March 30, 2021
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chih-Jie Lee, Shih-Chun Huang, Shih-Ming Chang, Ken-Hsien Hsieh, Yung-Sung Yen, Ru-Gun Liu
  • Patent number: 10962883
    Abstract: Systems and methods described herein relate to the manufacture of optical elements and optical systems. An example method includes overlaying a first mask on a photoresist material and a substrate, and causing a light source to illuminate the photoresist material through the first mask during a first exposure so as to define a first feature. During the first exposure, the light source is positioned at a non-normal angle with respect to a plane parallel to the substrate. The method includes developing the photoresist material so as to retain an elongate portion of the photoresist material on the substrate. A first end of the elongate portion includes an angled portion that is sloped at an angle with respect to a long axis of the elongate portion. The method also includes depositing a reflective material through a second mask onto the angled portion.
    Type: Grant
    Filed: November 15, 2019
    Date of Patent: March 30, 2021
    Assignee: Waymo LLC
    Inventors: Bernard Fidric, Pierre-yves Droz, David Hutchison
  • Patent number: 10955740
    Abstract: The present invention provides; a pellicle frame which can effectively inhibit distortion of the photo mask (8) caused by mounting the pellicle (1), and which does not have a complex shape, and a pellicle which uses said pellicle frame are provided, and a manufacturing method of a blackened pellicle frame is also provided which can reduce the defect of the surface flickering under concentrated light and which facilitates inspection of the foreign matter adhesion prior to use. The present invention relates to a pellicle frame with an anodized film on a surface of an aluminum alloy frame, characterized in that: the aluminum alloy frame comprises an aluminum alloy which contains Ca: 5.0 to 10.
    Type: Grant
    Filed: June 30, 2017
    Date of Patent: March 23, 2021
    Assignees: NIPPON LIGHT METAL COMPANY, LTD., Mitsui Chemicals, Inc.
    Inventors: Yoshihiro Taguchi, Kazuo Kohmura, Daiki Taneichi
  • Patent number: 10955744
    Abstract: A method of determining a parameter of a pattern transfer process and device manufacturing methods are disclosed. In one arrangement, a method includes obtaining a detected representation of radiation redirected by a structure. The structure is a structure formed by applying a pattern processing to a pattern transferred to an earlier formed structure by a pattern transfer process. The pattern processing is such as to remove one or more selected regions in a horizontal plane of the earlier formed structure to form a pattern in the horizontal plane. The pattern is defined by a unit cell that is mirror symmetric with respect to an axis of mirror symmetry. An asymmetry in the detected representation is determined. The determined asymmetry in the detected representation is used to determine a parameter of the pattern transfer process.
    Type: Grant
    Filed: August 10, 2018
    Date of Patent: March 23, 2021
    Assignee: ASML Netherlands B.V.
    Inventors: Koen Van Witteveen, Wei-Chun Wang, Paul Jonathan Turner, Elliott Gerard McNamara, Giacomo Miceli
  • Patent number: 10948816
    Abstract: The present invention provides a pellicle frame which can effectively inhibit deformation of an exposure master plate (8) caused by affixing the pellicle (1), and which does not have a complex shape, and a pellicle which uses said pellicle frame are provided. The pellicle frame with an anodized film on a surface of an aluminum alloy frame is characterized in that: the aluminum alloy frame comprises an aluminum alloy which contains Ca: 5.0 to 10.0% by weight with the remainder aluminum and unavoidable impurities are contained, and has an area (volume) ratio of an Al4Ca phase, which is a dispersed phase, is greater than or equal to 25%, and a crystal structure of a part of the Al4Ca phase is monoclinic; wherein the anodized film contains Al4Ca particles.
    Type: Grant
    Filed: June 30, 2017
    Date of Patent: March 16, 2021
    Assignee: NIPPON LIGHT METAL COMPANY, LTD.
    Inventors: Yoshihiro Taguchi, Takayuki Yamaguchi, Jun Yu, Yasuo Ishiwata