Abstract: Provided is a multilayer reflective film formed substrate formed with a fiducial mark for accurately managing coordinates of defects. A multilayer reflective film formed substrate is formed with a multilayer reflective film, which is adapted to reflect EUV light, on a substrate and a fiducial mark which serves as a reference for a defect position in defect information is formed on the multilayer reflective film. The fiducial mark includes a main mark for determining a reference point for the defect position and auxiliary marks arranged around the main mark. The main mark has a point-symmetrical shape and has a portion with a width of 200 nm or more and 10 ?m or less with respect to a scanning direction of an electron beam writing apparatus or defect inspection light.
Abstract: The present disclosure provides an anti-ESD photomask and method of the same. In the method, a substrate is provided first. Then, a light-shielding layer is formed on a portion of the substrate, in which the light-shielding layer includes a Mo-containing layer. Next, a surface treatment operation is performed to convert a surface of the portion of the substrate and a surface of the light-shielding layer into a non-conductive layer.
Abstract: In a method of calculating a shift value of a cell contact, a reference region and a correction region may be set on an image of an actual cell block. The cell block may include a plurality of actual cell contacts formed using a mask. Each of preliminary shift values of the actual cell contacts with respect to target cell contacts in a target cell block to be formed using the mask may be measured based on the image. The preliminary shift values of the actual cell contacts in the reference region may be minimized. Actual shift values of the actual cell contacts in the correction region with respect to the minimized preliminary shift values may be calculated. Thus, the mask may be corrected using the accurately measured shift values so that the cell contacts may have designed positions.
Abstract: In a chamber (50), a quartz substrate (10) having a main surface on which an optical film (20) is formed is put on a susceptor (30). A flash lamp (60) is housed in a lamp house (90), and the optical film (20) is irradiated with flash light through two quartz plates (70a and 70b). A transmittance adjustment region (80) is formed on a surface of the quartz plate (70b) of the two quartz plates (70a and 70b), and the amount of light with which the optical film (20) is irradiated has in-plane distribution. If the optical film (20) is irradiated with the flash light, optical characteristics of the optical film (20) change depending on the received irradiation energy. Hence, for example, the characteristics of the optical film are not uniform, the optical film is irradiated with flash light having such irradiation energy distribution that cancels the in-plane distribution.
Abstract: According to one embodiment, a layout region of a mask pattern is divided into N (N is an integer of 2 or larger) units, a main pattern resolved by exposure light is arranged and sub patterns not resolved by the exposure light are arranged outside the main pattern such that distributions of attenuation amount of the exposure light in the divided layout regions are different.
Abstract: On an EUV light-reflecting surface of titania-doped quartz glass, an angle (?) included between a straight line connecting an origin (O) at the center of the reflecting surface to a birefringence measurement point (A) and a fast axis of birefringence at the measurement point (A) has an average value of more than 45 degrees. Since fast axes of birefringence are distributed in a concentric fashion, a titania-doped quartz glass substrate having a high flatness is obtainable which is suited for use in the EUV lithography.
Abstract: A parameter acquiring method for dose correction of a charged particle beam includes writing evaluation patterns on a substrate coated with resist; writing, while varying writing condition, a peripheral pattern on a periphery of any different one of the evaluation patterns, after an ignorable time as to influence of resist temperature increase due to writing of an evaluation pattern concerned has passed; and calculating a parameter for defining correlation among a width dimension change amount of the evaluation pattern concerned, a temperature increase amount of the evaluation pattern concerned, and a backscatter dose reaching the evaluation pattern concerned, by using, under each writing condition, a width dimension of the evaluation pattern concerned, the temperature increase amount of the evaluation pattern concerned at each shot time, and the backscatter dose reaching the evaluation pattern concerned from each shot.
Abstract: Provided is a mask blank with a phase shift film having a function to transmit ArF exposure light at a predetermined transmittance and a function to generate a predetermined phase difference to the transmitting ArF exposure light, and having high ArF light fastness. The phase shift film has a function to transmit ArF exposure light at 2% or more transmittance and a function to generate a phase difference of 150 degrees or more and 180 degrees or less to the transmitting ArF exposure light; a lower layer and an upper layer are stacked from a substrate side; the lower layer is formed from silicon or silicon containing one or more elements selected from nonmetallic elements other than oxygen and semimetal elements; the upper layer other than a surface layer is formed from silicon and nitrogen or a material consisting of silicon, nitrogen and one or more elements selected from nonmetallic elements excluding oxygen and semimetal elements; the lower layer has refractive index n of less than 1.
Abstract: A pellicle membrane includes a film consisting of an organic material and an inorganic material, wherein a region containing an organic material and a region consisting of an inorganic material are present in the same plane of the film, and wherein at least a central portion of the film is a region consisting of an inorganic material, and at least a peripheral edge portion of the film is a region containing an organic material.
Abstract: A mask plate is disclosed. The mask plate includes a via hole pattern, the via hole pattern includes a body portion and at least two protruding portions extending outward from the body portion; a dimension of the body portion is greater than a resolution dimension of an exposure machine, and each of the protruding portions includes a first protruding portion having a dimension greater than the resolution dimension of the exposure machine. Upon exposure of the mask plate, the protruding portions themselves and zones between adjacent protruding portions form convex portions and concave portions of a via hole, respectively; in this way, a circumstance and also an edge area of the via hole as formed is increased and an electric resistance of the via hole is reduced effectively.
Abstract: A method and system for fracturing or mask data preparation is disclosed in which a desired substrate pattern for a substrate is input. A plurality of charged particle beam shots is then determined which will form a reticle pattern on a reticle, where the reticle pattern will produce a substrate pattern on the substrate using an optical lithography process, wherein the substrate pattern is within a predetermined tolerance of the desired substrate pattern. A similar method and a similar system for forming a pattern on a reticle are also disclosed.
Abstract: Systems and methods are disclosed herein for enhancing lithography printability, and in particular, for enhancing image contrast. An exemplary method includes receiving an integrated circuit (IC) design layout and generating an exposure map based on the IC design layout. The IC design layout includes a target pattern to be formed on a workpiece, and the exposure map includes an exposure grid divided into dark pixels and bright pixels that combine to form the target pattern. The method further includes adjusting the exposure map to increase exposure dosage at edges of the target pattern. In some implementations, the adjusting includes locating an edge portion of the target pattern in the exposure map, where the edge portion has a corresponding bright pixel, and assigning exposure energy from at least one dark pixel to the corresponding bright pixel, thereby generating a modified exposure map.
Abstract: A photomask is provided. A photomask, comprising: a transparent substrate; and a plurality of filter layers disposed on the transparent substrate, wherein the filter layers include a first filter layer, which selectively transmits first-wavelength light therethrough, and a second filter layer, which selectively transmits second-wavelength light therethrough.
March 27, 2015
Date of Patent:
October 9, 2018
Samsung Display Co., Ltd.
Kwang Woo Park, Jun Hyuk Woo, Jeong Won Kim, Seung Bo Shim, Jin Ho Ju
Abstract: In some embodiments, a patterned photomask has a plurality of shielding layers. In some embodiments, a photomask for mask patterning is described. The photomask includes a phase shift layer overlying a transparent layer. The photomask also includes a first shielding layer overlying the phase shift layer. The first shielding layer has a first thickness and a first optical density. The photomask further includes a second shielding layer overlying the first shielding layer. The second shielding layer has a second thickness and a second optical density. The second thickness is less that than the first thickness and the second optical density is less than the first optical density.
Abstract: A method of correcting a critical dimension (CD) variation in extreme ultraviolet (EUV) photolithography includes mapping the CD variation of a wafer exposure field formed by a photolithography system that includes an EUV photolithography photomask. Parameters of a treatment to produce a change in reflectance at a working wavelength of EUV radiation in a region of a reflective multilayer of the photomask are determined, the change in reflectance being calculated to correct the mapped CD variation. A treatment beam is directed to the region. The region is treated with the beam in accordance with the determined parameters.
June 22, 2016
Date of Patent:
October 9, 2018
Carl Zeiss SMT GmbH
Sergey Oshemkov, Vladimir Kruglyakov, Frederik Blumrich, Yuval Perets
Abstract: A mask blank having a structure in which, on a transparent substrate, a light shielding film and a hard mask film are laminated in the stated order from the transparent substrate side. The hard mask film is formed of a material containing at least one element selected from silicon and tantalum, and the light shielding film is formed of a material containing chromium. The mask blank has a structure of three layers wherein a lower layer, an intermediate layer, and an upper layer are laminated in the stated order from the transparent substrate side. The upper layer has a lowest content of chromium in the light shielding film, the intermediate layer has a highest content of chromium in the light shielding film. It contains at least one metallic element selected from indium, tin, and molybdenum.
Abstract: There is provided a pellicle for EUV lithography, which has a filter attached to a vent hole made through a pellicle frame bar for air pressure adjustment, and this filter is designed to be heat-resistant by being made of either a metal or a ceramic material, and is adhered to the pellicle frame by weldering or soldering, and also the filter has a filtration accuracy of 0.1 through 0.3 ?m.
Abstract: A method for repairing a lithography mask includes determining a defect region in the mask, selecting a predetermined peripheral region of the defect region, depositing a barrier layer on the predetermined peripheral region, and repairing the defect region. The mask may be a MoSi-binary type mask. The barrier layer may compensate for uncertainty occurring during the repair of the defect region. Because the repair processes only require determining the defect region and forming the barrier layer on the periphery of the defect region, and etching the defect, the novel method has a shorter repair time period, better repair effect and improved repair efficiency than conventional methods.
September 12, 2016
Date of Patent:
September 11, 2018
SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORPORATION, SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION
Abstract: A pellicle includes a pellicle membrane, which includes a porous thin film. The porous thin film includes a plurality of nanowires, which are arranged across one another to form a net structure. A photomask assembly includes the pellicle and a photomask, wherein the pellicle is fixed to a surface of the photomask.