Abstract: A method for manufacturing a light-emitting device comprises: performing first light irradiation; subsequent to the performing first application, that involves irradiating with light using a first photomask, from above the substrate, the position where the first solution is applied, and forming a first exposure region exposed by the first light irradiation in which the first ligand melts and the first solvent vaporizes, and a first non-exposure region at a position different from a position exposed by the first light irradiation, performing first cooling, subsequent to the performing first light irradiation, that involves lowering a temperature of the first quantum dot to a temperature equal to or lower than a melting point of the first ligand and solidifying the first ligand; and performing first removal, subsequent to the performing first cooling, that involves washing an upper layer relative to the substrate to remove the first solution in the first non-exposure region.

Abstract: The present disclosure is directed toward systems, methods, and non-transitory computer readable media for identifying and recommending team members for target users from a content management system utilizing a machine learning approach. In particular, the disclosed systems can generate a set of candidate team members from among users of the content management system based on various factors such as access to a common digital content item. In some embodiments, the disclosed systems further determine recommended team members from among the set of candidate team members. For example, the disclosed systems can utilize a machine learning approach to generate or predict recommended team members based on particular features extracted or determined for, or with respect to, the various candidate team members. In certain implementations, the disclosed systems further provide a recommended-team-member notification to notify a target user of a recommended team member.

Abstract: Provided is a semiconductor device having excellent heat dissipation capacity and electromagnetic wave suppression effect. A semiconductor device 1 includes a semiconductor element 30; a conductive cooling member 40 provided above the semiconductor element 30, a conductive thermally conductive member 10 that is provided between the semiconductor element 30 and the cooling member 40 and contains a cured resin. The conductive thermally conductive member 10 is connected to a ground 60 in the substrate 50 to electrically connect the cooling member 40 and the ground 60.

Abstract: A semiconductor module circuit structure, including an insulating circuit substrate having an insulating plate, and a circuit pattern formed on a top face of the insulating plate, and a semiconductor element disposed on a top face of the circuit pattern. The circuit pattern includes a first straight part extending in a first direction, a second straight part extending in a second direction different from the first direction, and a corner part connecting the first and second straight parts. A wiring member is formed on a top surface of the first straight part along the first direction, the wiring member being formed off-center at the first straight part to be closer to an outer periphery of the circuit pattern.

Abstract: A method of manufacturing customized ceramic labial/lingual orthodontic brackets by digital light processing, said method comprises measuring dentition data of a profile of teeth of a patient, wherein measuring dentition data is performed using a CT scanner or intra-oral scanner, based on the dentition data, creating a three dimensional computer-assisted design (3D CAD) model of the patient's teeth using reverse engineering, and saving the 3D CAD model on a computer, designing a 3D CAD bracket structure model for a single labial or lingual bracket structure, importing the 3D CAD bracket structure model into a Digital Light Processing (DLP) machine, directly producing the bracket by layer manufacturing.

Abstract: A vapor deposition device is provided that can ameliorate or improve the LPD quality. A vapor deposition device includes a first holder that supports a carrier at a topmost-level and a second holder that supports the carrier under the first holder in a load-lock chamber, and a second robot mounts a before-treatment wafer extracted from a wafer storage container on the carrier standing by at the first holder in the load-lock chamber.

Abstract: The present disclosure relates to systems and methods for determining an engagement profile of a participant by associating electronic activities to a profile. It may generate the engagement profile based on analysis of the electronic activity level. An example implementation may contain the following steps. The system may access for a first record object a plurality of electronic activities linked with the first record object. The system may identify for a participant from the plurality of electronic activities a set of electronic activities including the participant. The system may determine an engagement profile of the participant based on a first number of electronic activities of the set of electronic activities sent by the participant, a second number of the set of electronic activities received by the participant and a temporal distribution of the set of electronic activities. The system may store the engagement profile in one or more data structures.

Abstract: A method of manufacturing a semiconductor device comprises: forming a doped region having a first conductive type in a semiconductor substrate, and forming a gate structure on the doped region; implanting doping ions having a second conductive type to a second region of the doped region along a vertical direction, so as to form a source/drain region having the second conductive type; implanting doping ions having the first conductive type to a first region of the doped region along a tilt direction inclining toward the gate structure, and then annealing, so as to form a Halo region extending to the gate structure from the source/drain region, wherein the first region is adjacent to the gate structure and the second region is located on the side of the first region facing away from the gate structure, and the first region and the second region have no overlap region.

Abstract: A method for providing candidate recommendations for an open position based on problem solving proficiency and culture matching includes: receiving job posting data from a first computing system, the job posting data including employer culture markers and job criteria values; receiving candidate information for a candidate, the candidate information including candidate culture markers, text submissions, and candidate values; determining a culture match score by comparing the employer culture markers against the candidate culture markers; determining a problem solving proficiency level for the candidate by applying a problem solving algorithm to the text submissions; and transmitting a hiring recommendation for the candidate to the first computing system based on the determined culture match score and problem solving proficiency level for the candidate and the criteria values.

Abstract: A system and a method are provided for a direct to store supply chain to bring high volume, bulk space products directly from suppliers, manufacturers, and vendors to retail locations, thereby bypassing retailer distribution centers. The system comprises an order management and invoicing system configured to facilitate demand signals from retail locations to manufacturers and vendors of desired products. A routing optimization system is configured to continually optimize an aggregate of orders so as to produce lowest-cost shipping solutions. A tracking and notification system is configured to provide manufacturers with clear tracking visibility of en-route deliveries once they leave manufacturing facilities.

Abstract: A method for manufacturing an integrated circuit device is provided. The method includes forming first, second, and third semiconductor fins over a semiconductor substrate, in which the second semiconductor fin is between the first and third semiconductor fins; forming first and second fin sidewall spacers respectively on a sidewall of a first portion of the first semiconductor fin and a sidewall of a first portion of the second semiconductor fin, wherein the first and second fin sidewall spacers are between the first and second semiconductor fins; recessing the first portions of the first and second semiconductor fins and a first portion of the third semiconductor fin; and forming first to third epitaxial features respectively on the recessed portions of the first to third semiconductor fins, wherein the second epitaxial feature is spaced apart from the first epitaxial feature and merged with the third epitaxial feature.

Abstract: Provided is a thin film transistor including an active layer including a first silicon active layer, a second silicon active layer, and an oxide active layer in a space between the first silicon active layer and the second silicon active layer, a gate electrode on the active layer with a gate insulating layer disposed therebetween, and a source electrode and a drain electrode with an interlayer insulating layer disposed between the gate electrode and the source and drain electrodes, the source and drain electrodes being in contact with the first silicon active layer and the second silicon active layer, respectively.

Abstract: According to an aspect of an embodiment, operations may include obtaining a first fixed temperature and a second fixed temperature of a replica exchange Markov Chain Monte Carlo (MCMC) process used to solve an optimization problem associated with a system, and obtaining a plurality of replicas of the system. The operations may also include obtaining a target swap acceptance probability with respect to swapping, during the replica exchange MCMC process, between replicas that correspond to adjacently ordered temperatures of a set of temperatures between the first fixed temperature and the second fixed temperature. The operations may include determining a respective average swap acceptance probability with respect to one or more respective adjacent pairs of temperatures. Further, the operations may include adjusting one or more of the variable temperatures based on a relationship between the target swap acceptance probability and each of one or more of the respective swap acceptance probabilities.

Abstract: A network based order fulfillment systems having an improved user interface at both a customer device and at an order fulfillment location employee device. Both customer and employee devices scan collect user input and other information using one or more sensors of the user devices to provide proper notifications to both the customer and the employee based on the actions of each. Location information for a customer computing device can be used to continually update ETA and time since arrival information displayed at the employee's computing device.

Abstract: A semiconductor device and method of making same. The semiconductor device includes: a first conductivity type transistor and a second conductivity type transistor, wherein each of the first conductivity type transistor and the second conductivity type includes a gate insulating film formed on a base, a metal gate electrode formed on the gate insulating film, and side wall spacers formed at side walls of the metal gate electrode, wherein the gate insulating film is made of a high dielectric constant material, and wherein offset spacers are formed between the side walls of the metal gate electrode and the inner walls of the side wall spacers in any one of the first conductivity type transistor and the second conductivity type transistor, or offset spacers having different thicknesses are formed in the first conductivity type transistor and the second conductivity type transistor.

Abstract: A semiconductor device fabrication method is provided. The semiconductor device fabrication method includes frontside semiconductor device processing on a frontside of a wafer, flipping the wafer, backside semiconductor device processing on a backside of the wafer and backside and frontside contact formation processing on the backside and frontside of the wafer, respectively.

Abstract: Various embodiments relate generally to data science and data analysis, computer software and systems, and control systems to provide a platform to facilitate implementation of an interface, and, more specifically, to a computing and data storage platform that implements specialized logic to facilitate distribution of items in accordance with an automatically adaptive schedule, for example, via an interface. In some examples, a method may include predicting data representing, for example, a zone of time in which depletion of an item is predicted. The method may monitor whether to replenish the item, and transmit via a network an electronic message including one or more item characteristics associated with the item to be replenished. The method may also include receiving another electronic message, and transmitting a control message to a merchant computing system to initiate adaptive distribution to replenish the item, among other things.

Abstract: An antenna device according to an example embodiment includes a silicon substrate of first type doping, at least two first doped regions formed by second type doping different from the first type doping, a second doped region formed by the second type doping outside a channel region surrounding the at least two first doped regions, and at least two gates disposed on a dielectric layer. In the antenna device, a resonant frequency is adjusted according to an external voltage individually applied to the at least two gates, and polarization information of a terahertz (THz) light source is obtained based on a pattern and an amount of an electric field measured at the at least two gates.

Abstract: A computer-based system for improving a process for synchronizing an asset management system with a work order management system is disclosed. The computer-based system determines whether report data has been received from an asset management system. In response to determining that report data has been received, the report data is parsed to determine one or more keywords that describe an issue reported by the asset management system. The keywords are used to determine whether one or more instructions are available for handling the issue. If the instructions are available, then the instructions are obtained and used to generate one or more messages. The messages are transmitted to a work order management system to cause the work order management system to generate a work order and to dispatch the work order to a service provider to cause the service provider to resolve the issue reported by the asset management system.

Abstract: A method of manufacturing a magnetoresistive stack/structure comprising (a) etching through a second magnetic region to (i) provide sidewalls of the second magnetic region and (ii) expose a surface of a dielectric layer, (b) depositing a first encapsulation layer on the sidewalls of the second magnetic region and over a surface of the dielectric layer, (c) thereafter: (i) etching the first encapsulation layer which is disposed over the dielectric layer using a first etch process, and (ii) etching re-deposited material using a second etch process, wherein, after such etching, a portion of the first encapsulation layer remains on the sidewalls of the second magnetic region, (d) etching (i) through the dielectric layer to form a tunnel barrier and provide sidewalls thereof and (ii) etching the first magnetic region to provide sidewalls thereof, and (e) depositing a second encapsulation layer on the sidewalls of the tunnel barrier and first magnetic region.