Patents Examined by Daborah Chacko-Davis
  • Patent number: 10747101
    Abstract: The present specification relates to a photomask, a laminate including the photomask, a method for manufacturing the photomask and a method for forming a pattern using the photomask.
    Type: Grant
    Filed: July 28, 2016
    Date of Patent: August 18, 2020
    Assignee: LG CHEM, LTD.
    Inventors: Yong Goo Son, Kiseok Lee, Seung Heon Lee
  • Patent number: 10732500
    Abstract: The present specification relates to a photomask, a laminate including the photomask, a method for manufacturing the photomask, a device for forming a pattern using the photomask, and a method for forming a pattern using the photomask.
    Type: Grant
    Filed: July 28, 2016
    Date of Patent: August 4, 2020
    Assignee: LG CHEM, LTD.
    Inventors: Yong Goo Son, Seung Heon Lee
  • Patent number: 10727078
    Abstract: A method of forming fine patterns includes forming a mask on an etching target, forming an anti-reflective layer on the mask, forming fixing patterns such that top surfaces of the anti-reflective layer and fixing patterns are exposed, forming a block copolymer layer including first and second polymer blocks, and phase-separating the block copolymer layer to form first patterns and second patterns on the anti-reflective layer and the fixing patterns. The first and second patterns include the first and second polymer blocks, respectively. The anti-reflective layer has a neutral, i.e., non-selective, interfacial energy with respect to the first and second polymer blocks. The fixing patterns have a higher interfacial energy with respect to the first polymer block than the second polymer block.
    Type: Grant
    Filed: December 6, 2016
    Date of Patent: July 28, 2020
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jeong Ju Park, Kyeongmi Lee, Seungchul Kwon, Eunsung Kim, Shiyong Yi
  • Patent number: 10712662
    Abstract: A method of forming a pattern is disclosed. The method includes preparing a composition that includes a solvent and a polymer including a repeating unit in which at least one isocyanurate unit having a first structure is connected to another isocyanurate unit having a second structure different from the first structure; applying the composition on a substrate to form an underlayer; forming a photoresist layer on the underlayer; etching the photoresist layer to form a photoresist pattern; and patterning the substrate using the photoresist pattern.
    Type: Grant
    Filed: January 13, 2017
    Date of Patent: July 14, 2020
    Assignees: SAMSUNG ELECTRONICS CO., LTD., DONGJIN SEMICHEM CO., LTD.
    Inventors: Jin-A Ryu, Jung-Youl Lee, Kyung-Lyul Moon, Yool Kang, Hyun-Jin Kim, Yu-Jin Jeoung, Man-Ho Han
  • Patent number: 10712675
    Abstract: An immersion liquid is provided comprising an ion-forming component, e.g. an acid or a base, which has a relatively high vapor pressure. Also provided are lithography processes and lithography systems using the immersion liquid.
    Type: Grant
    Filed: September 18, 2017
    Date of Patent: July 14, 2020
    Assignee: ASML Netherlands B.V.
    Inventors: Hans Jansen, Marco Koert Stavenga, Jacobus Johannus Leonardus Hendricus Verspay, Franciscus Johannes Joseph Janssen, Anthonie Kuijper
  • Patent number: 10705428
    Abstract: According to an exemplary embodiment of the present invention, there are provided an organic treatment solution for patterning chemically amplified resist films, an organic treatment solution containing 1 ppm or less of an alkyl olefin having a carbon number of 22 or less and having a metal element concentration of 5 ppm or less for each of Na, K, Ca, Fe, Cu, Mg, Mn, Li, Al, Cr, Ni and Zn, a pattern formation method, an electronic device manufacturing method, and an electronic device use the same.
    Type: Grant
    Filed: April 28, 2015
    Date of Patent: July 7, 2020
    Assignee: FUJIFILM Corporation
    Inventors: Tsukasa Yamanaka, Takashi Kawamoto
  • Patent number: 10691017
    Abstract: Pellicle-mask systems for advanced lithography, such as extreme ultraviolet lithography, are disclosed herein. An exemplary pellicle-mask system includes a mask having an integrated circuit (IC) pattern, a pellicle membrane, and a pellicle frame. The pellicle frame has a first surface attached to the pellicle membrane and a second surface opposite the first surface attached to the mask, such that the IC pattern of the mask is positioned within an enclosed space defined by the mask, the pellicle membrane, and the pellicle frame. A void is defined between the pellicle frame and the mask, where the void is defined by a portion of the second surface of the pellicle membrane not attached to the mask. The void is not in communication with the enclosed space and is not in communication with an exterior space of the pellicle-mask system.
    Type: Grant
    Filed: November 6, 2018
    Date of Patent: June 23, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Yu-Ching Lee, Ching-Fang Yu, Chun-Hung Lin, Ting-Hao Hsu, Ching-Hsiang Chang, Sheng-Chi Chin
  • Patent number: 10684547
    Abstract: Systems and methods for patterning nail polish are disclosed. In one embodiment, the system includes a source of light, and a programmable mask that can selectively transmit light to a photoresist nail polish. In some embodiments, the programmable mask is a liquid crystal display (LCD) or a digital light processing screen (DLP). The system may also include a controller configured for controlling the light transmission properties of the programmable mask.
    Type: Grant
    Filed: January 10, 2017
    Date of Patent: June 16, 2020
    Assignee: L'Oréal
    Inventors: Zane Bowman Allen Miller, Vincenzo Casasanta, III
  • Patent number: 10684552
    Abstract: Various methods are disclosed herein for reducing (or eliminating) printability of mask defects during lithography processes. An exemplary method includes performing a first lithography exposing process and a second lithography exposing process using a mask to respectively image a first set of polygons oriented substantially along a first direction and a second set of polygons oriented substantially along a second direction on a target. During the first lithography exposing process, a phase distribution of light diffracted from the mask is dynamically modulated to defocus any mask defect oriented at least partially along both the first direction and a third direction that is different than the first direction. During the second lithography exposing process, the phase distribution of light diffracted from the mask is dynamically modulated to defocus any mask defect oriented at least partially along both the second direction and a fourth direction that is different than the third direction.
    Type: Grant
    Filed: May 4, 2018
    Date of Patent: June 16, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Yen-Cheng Lu, Chia-Hao Hsu, Shinn-Sheng Yu, Chia-Chen Chen, Jeng-Horng Chen, Anthony Yen
  • Patent number: 10678137
    Abstract: Techniques related to multi-pass patterning lithography, device structures, and devices formed using such techniques are discussed. Such techniques include exposing a resist layer disposed over a grating pattern with non-reflecting radiation to generate an enhanced exposure portion within a trench of the grating pattern and developing the resist layer to form a pattern layer having a pattern structure within the trench of the grating pattern.
    Type: Grant
    Filed: September 22, 2014
    Date of Patent: June 9, 2020
    Assignee: Intel Corporation
    Inventors: Manish Chandhok, Todd R. Younkin, Sang H. Lee, Charles H. Wallace
  • Patent number: 10669636
    Abstract: An all solution-processed deposition includes a non-water soluble, non-self-cracking film deposited by a solution process (e.g., spray, dip, spin coat, and the like), a water soluble, self-cracking film deposited by a solution process (e.g., spray, dip, spin coat, and the like), cracking of the film, and filling the cracks with a metal that is deposited in solution (e.g., by electroless disposition). A transparent substrate having a cracked water insoluble, non-self-cracking film surface coating includes a plurality of fissures therein extending to and exposing portions of the surface of the underlying transparent substrate is useful for producing a transparent conducting film.
    Type: Grant
    Filed: March 10, 2017
    Date of Patent: June 2, 2020
    Assignee: The Trustees of Boston College
    Inventors: Michael J. Naughton, Chaobin Yang, Kris Kempa, Michael J. Burns
  • Patent number: 10663863
    Abstract: A method of producing a layer structure and a method of forming a pattern, the method of producing a layer structure including coating a first composition on a substrate that has a pattern thereon; curing the coated first composition to form a first organic layer; applying a liquid material to the first organic layer to remove a part of the first organic layer; and coating a second composition on remaining parts of the first organic layer; and curing the coated second composition on the remaining parts of the first organic layer to form a second organic layer: wherein the first composition and the second composition each independently include a solvent, and a polymer including a structural unit represented by Chemical Formula 1, *A1-B1*.
    Type: Grant
    Filed: September 14, 2016
    Date of Patent: May 26, 2020
    Assignee: Samsung SDI Co., Ltd.
    Inventors: Seulgi Jeong, Minsoo Kim, Sunghwan Kim, Hyunji Song, Sunhae Kang, Youngmin Kim, Yoona Kim, Jinhyung Kim, Younhee Nam, Jaeyeol Baek, Byeri Yoon, Chungheon Lee, Seunghee Hong, Sunmin Hwang
  • Patent number: 10663854
    Abstract: A method of fabricating a photomask comprising providing a photomask blank including a phase shifting layer, a first light blocking layer, a first resist layer, a second light blocking layer and a second resist layer stacked sequentially in this order on a substrate, forming second resist patterns, forming second light blocking patterns, forming first resist patterns, forming first light blocking patterns and phase shifting patterns, removing the first resist patterns, and selectively removing at least one of the first light blocking patterns, wherein the second resist layer has a thickness such that all of the second resist layer is removed while the first resist layer is patterned for exposing the second light blocking layer.
    Type: Grant
    Filed: April 26, 2019
    Date of Patent: May 26, 2020
    Assignee: SK hynix Inc.
    Inventor: Dong Sik Jang
  • Patent number: 10658191
    Abstract: A method includes performing a first polymerization process on a monomer solution to form a partially processed resin solution, the partially processed resin solution comprising a solvent and a silicon-based resin, spin coating the partially processed resin solution on a substrate, and performing a second polymerization process on the partially processed resin solution to shrink the partially processed resin solution to form a conformal silicon-based resin layer.
    Type: Grant
    Filed: September 4, 2015
    Date of Patent: May 19, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chen-Yu Liu, Ching-Yu Chang, Ming-Huei Weng
  • Patent number: 10656519
    Abstract: An object of the present invention is to provide a resist stripper for stripping resist from a substrate with a metallic line and/or a metal oxide film, which has excellent stripping properties and shows reduced reattachment of stripped resist, and which is also excellent in antifoaming properties. The resist stripper contains: (A) an amine; (B) an organic solvent; and (C) 5.0 wt % or less of a sulfonic or carboxylic acid having a weight average molecular weight of 5,000 to 1,000,000 or a salt thereof, and the resist stripper is free of (D) water, or contains (D) 60 wt % or less of water.
    Type: Grant
    Filed: November 20, 2017
    Date of Patent: May 19, 2020
    Assignee: Nagase ChemteX Corporation
    Inventor: Yoshihiro Mukai
  • Patent number: 10649336
    Abstract: A system for fabricating a semiconductor device includes a first supplier, a second supplier, a mixer, and an applier. The first supplier is configured to supply a developer solution having a first chemical. The second supplier is configured to supply the second chemical to the mixer. The mixer is configured to mix the developer solution with a second chemical, in which the second chemical is configured to form a plurality of bubbles in the developer solution. The applier is configured to apply the developer solution mixed with the bubbles onto a photoresist layer formed on a substrate, in which the photoresist layer has an exposed region, and the first chemical is configured to dissolve the exposed region of the photoresist layer through a chemical reaction.
    Type: Grant
    Filed: September 30, 2015
    Date of Patent: May 12, 2020
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Jun-Yih Yu, Chang-Fa Lin, Ching-Hung Cheng, Yi-Chuan Lo, Ming-Hsuan Chuang
  • Patent number: 10642153
    Abstract: Organometallic radiation resist compositions are described based on tin ions with alkyl ligands. Some of the compositions have branched alkyl ligands to provide for improved patterning contrast while maintaining a high degree of solution stability. Blends of compounds with distinct alkyl ligands can provide further improvement in the patterning. High resolution patterning with a half-pitch of no more than 25 nm can be achieved with a line width roughness of no more than about 4.5 nm. Synthesis techniques have been developed that allow for the formation of alkyl tin oxide hydroxide compositions with very low metal contamination.
    Type: Grant
    Filed: October 22, 2015
    Date of Patent: May 5, 2020
    Assignee: Inpria Corporation
    Inventors: Stephen T. Meyers, Jeremy T. Anderson, Joseph Burton Edson, Kai Jiang, Douglas A. Keszler, Michael K. Kocsis, Alan J. Telecky, Brian J. Cardineau
  • Patent number: 10627718
    Abstract: A developing method comprises steps as follows. A wafer is rotated. A developer solution is dispensed onto the rotated wafer through a first nozzle. The first nozzle is moved back and forth between a first position and a second position, in which moving the first nozzle back and forth is performed such that the first nozzle moving forward to the second position is reversed at the second position and that the first nozzle moving forward to the first position is reversed at the first position, and the first position and the second position are directly over the wafer, and the developer solution is dispensed through the first nozzle when moving the first nozzle back and forth between the first position and the second position.
    Type: Grant
    Filed: October 15, 2018
    Date of Patent: April 21, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Yi-Rem Chen, Ming-Shane Lu, Chung-Hao Chang, Jui-Ping Chuang, Li-Kong Turn, Fei-Gwo Tsai
  • Patent number: 10622211
    Abstract: A wafer is rinsed with a solvent. The wafer has an increased hydrophobicity as a result of being rinsed with the solvent. A metal-containing material is formed over the wafer after the wafer has been rinsed with the solvent. One or more lithography processes are performed at least in part using the metal-containing material. The metal-containing material is removed during or after the performing of the one or more lithography processes. The increased hydrophobicity of the wafer facilitates a removal of the metal-containing material.
    Type: Grant
    Filed: April 19, 2017
    Date of Patent: April 14, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: An-Ren Zi, Joy Cheng, Ching-Yu Chang
  • Patent number: 10564546
    Abstract: A resist pattern-forming method includes applying a photoresist composition directly or indirectly on a front face of a substrate to form a photoresist film. A topcoat layer is laminated directly or indirectly on a front face of the photoresist film. The photoresist film is subjected to liquid immersion lithography in a presence of a liquid immersion liquid on a front face of the topcoat layer. Part of the topcoat layer is removed after subjecting the photoresist film to the liquid immersion lithography. The photoresist film is developed after the part of the topcoat layer is removed.
    Type: Grant
    Filed: May 11, 2017
    Date of Patent: February 18, 2020
    Assignee: JSR CORPORATION
    Inventors: Tomohiko Sakurai, Sousuke Oosawa, Hiromitsu Nakashima, Kousuke Terayama