Abstract: The purification of monoalkyl tin trialkoxides and monoalkyl tin triamides are described using fractional distillation and/or ultrafiltration. The purified compositions are useful as radiation sensitive patterning compositions or precursors thereof. The fractional distillation process has been found to be effective for the removal of metal impurities down to very low levels. The ultrafiltration processes have been found to be effective at removal of fine particulates. Commercially practical processing techniques are described.

Abstract: The present invention provides a photomask including a substrate, a circuit pattern on the substrate, an electrostatic discharge (ESD) ring on the substrate and an ESD line on the substrate. The ESD structure surrounds the circuit pattern. The ESD line extends between an edge of the substrate and the ESD structure, in which the ESD line includes an edge portion extending beyond an end of an edge of the ESD structure, and the edge portion of the ESD line includes at least one comb-shaped structure.

Abstract: A resist underlayer composition and a method of forming patterns, the composition including a solvent; and a polymer that includes a structural unit represented by Chemical Formula 1 and a structural unit represented by Chemical Formula 2,

Abstract: A resist underlayer film for a resist pattern formation by developing a resist with organic solvent after exposure of resist. Method for manufacturing a semiconductor includes: applying onto a substrate a resist underlayer film forming composition including hydrolyzable silanes, hydrolysis products of hydrolyzable silanes, hydrolysis-condensation products of hydrolyzable silanes, or a combination thereof. Hydrolyzable silanes being silane of Formulas (1), (2) and (3).

Abstract: An object of the present invention is to provide a treatment liquid for manufacturing a semiconductor with which the occurrence of defects is suppressed such that a fine resist pattern or a fine semiconductor element can be manufactured. A treatment liquid for manufacturing a semiconductor according to an embodiment of the present invention includes: one compound (A) or two or more compounds (A) that satisfy the following requirement (a); one compound (B) or two or more compounds (B) that satisfy the following requirement (b); and one compound (C) or two or more compounds (C) selected from the group consisting of an Al compound and an NOx compound. In the treatment liquid, a total content of the compound (A) in the treatment liquid is 70.0 to 99.9999999 mass %, a total content of the compounds (B) is 10?10 to 0.1 mass %, and a ratio P of the compound (C) to the compound (B) represented by the following Expression I is 103 to 10?6.

Abstract: A method of forming a mask includes forming a base film containing a treatment agent on an object, forming a photosensitive organic film on the base film, forming an infiltrated portion by infiltrating the treatment agent into a lower portion of the photosensitive organic film, selectively exposing the photosensitive organic film to form a first region soluble in an alkaline solution and a second region insoluble in the alkaline solution, forming a third region insoluble in the alkaline solution in the infiltrated portion in the first region by causing a reaction between the first region and the treatment agent, developing the photosensitive organic film to remove a fourth region that is in the first region and other than the third region while leaving intact the second region and the third region, and etching the photosensitive organic film to remove one of the second region and the third region.

Abstract: A pattern-forming method includes forming a prepattern and including a first polymer is formed on a silicon-containing film on a substrate. An underlayer film including a second polymer is formed in recessed portions of the prepattern. A composition for directed self-assembled film formation including a third polymer is applied on the underlayer film and the prepattern. The first polymer includes a first structural unit. The second polymer includes: a molecular chain including the first structural unit and a second structural unit that differs from the first structural unit; and an end structure that bonds to one end of the molecular chain and includes at least one selected from the group consisting of an amino group, a hydroxy group and a carboxy group. The third polymer is a block copolymer including a block of the first structural unit and a block of the second structural unit.

Abstract: An actinic ray-sensitive or radiation-sensitive composition, and an actinic ray-sensitive or radiation-sensitive composition obtained by the method for producing an actinic ray-sensitive or radiation-sensitive composition each contain a cation having a metal atom, and a ligand, in which a value of ? represented by Equation (1) is 2.2 or less. A pattern forming method and the method for manufacturing an electronic device each use the actinic ray-sensitive or radiation-sensitive composition.

Abstract: An object of the present invention is to provide a treatment liquid for patterning a resist film and a pattern forming method, each of which can accomplish suppression of generation of defects on a pattern and reduction in bridge defects of the pattern at the same time. The pattern forming method of an embodiment of the present invention is a pattern forming method by forming a resist film on a substrate using a resist composition including at least a resin whose polarity increases by the action of an acid, a photoacid generator, and a solvent, exposing the resist film, and then treating the exposed resist film with a treatment liquid to form a pattern, in which the treatment liquid includes two or more organic solvents, a boiling point of at least one organic solvent of the two or more organic solvents is 120° C. to 155° C., a content of the organic solvent having a boiling point of 120° C. to 155° C.

Abstract: A method of fabricating a photomask includes selectively exposing portions of a photomask blank to radiation to change an optical property of the portions of the photomask blank exposed to the radiation, thereby forming a pattern of exposed portions of the photomask blank and unexposed portions of the photomask blank. The pattern corresponds to a pattern of semiconductor device features.

Abstract: In a method of manufacturing a chemical fluid for manufacturing an electronic material, a method of reducing particulate metal in the chemical fluid is selected according to a concentration of particulate metal including an iron atom, a concentration of particulate metal including a copper atom, and a concentration of particulate metal including a zinc atom which are measured by SP ICP-MS in the chemical fluid, and at least one of the concentration of particulate metal including an iron atom, the concentration of particulate metal including a copper atom, or the concentration of particulate metal including a zinc atom is reduced by using the selected reducing method.

Abstract: Disclosed are a semiconductor photoresist composition including an organometallic compound including at least one selected from compounds represented by Chemical Formulae 1 to 3 and a solvent, and a method of forming patterns using the semiconductor photoresist composition on an etching-objective layer to form a photoresist layer, patterning the photoresist layer to form a photoresist pattern, and etching the etching-objective layer using the photoresist pattern as an etching mask.

Abstract: An EUV mask absorber formed on a semiconductor structure, includes, in part a sidewall forming am angle relative to a surface of the semiconductor structure that is less than 90 degrees. The sidewall includes a layer of reflective material. The semiconductor structure may include, in part, a multitude of layers. The semiconductor structure may be disposed on a glass substrate, a silicon substrate, or the like. The EUV mask absorber is adapted to shift a phase of the EUV light passing therethrough. The EUV mask absorber may further include, in part, a layer of Ruthenium near a bottom surface of the absorber structure. The EUV mask absorber may further includes, in part, a layer of reflective material near a top surface of the absorber structure. The EUV mask absorber may further include, in part, Tantalum Oxynitride.

Abstract: A mask protective module is provided. The mask protective module includes a frame and a membrane supported by the frame. The membrane may include regions of which light transmittances, heat conductivities and/or strengths are different from each other.

Abstract: Organometallic radiation resist compositions are described based on tin ions with alkyl ligands. Some of the compositions have branched alkyl ligands to provide for improved patterning contrast while maintaining a high degree of solution stability. Blends of compounds with distinct alkyl ligands can provide further improvement in the patterning. High resolution patterning with a half-pitch of no more than 25 nm can be achieved with a line width roughness of no more than about 4.5 nm. Synthesis techniques have been developed that allow for the formation of alkyl tin oxide hydroxide compositions with very low metal contamination.

Abstract: Environmentally stable, chemically amplified (CA) positive resist compositions are described. These resist compositions are based on a blend of at least two types of polymer platforms. The first platform is a low activation energy, acetal blocked polyhydroxystyrene (PHS) based resin; the second platform is an acrylate based resin containing a high activation energy acid labile group [such as tertiary-butyl acrylate(t-BA)]. The resist composition also contains a photo-acid generator (PAG), a base quencher, a surfactant dissolved in a suitable solvent. Also described, is the use of these resist composition in a method for forming a photoresist relief image on a substrate.

Abstract: The present disclosure provides a method for lithography patterning in accordance with some embodiments. The method includes forming a photoresist layer over a substrate. The photoresist layer includes at least an acid labile group (ALG) and a thermo-base generator (TBG). The method further includes exposing a portion of the photoresist layer to a radiation and performing a baking process after the exposing of the portion of the photoresist layer. The TBG releases a base during the performing of the baking process, resulting in a chemical reaction between the ALG and the base. The method further includes removing an unexposed portion of the photoresist layer, resulting in a patterned photoresist layer.

Abstract: A patterned photo resist layer (for example an EUV photo resist layer), which may exhibit line width roughness (LWR) and line edge roughness (LER) or scum is treated with a plasma treatment before subsequent etching processes. The plasma treatment reduces LWR, LER, and/or photo resist scum. In one exemplary embodiment, the plasma treatment may include a plasma formed using a gas having a boron and halogen compound. In one embodiment, the gas compound may be a boron and chlorine compound, for example boron trichloride (BCl3) gas. In another embodiment, the gas compound may be a boron and fluorine compound, for example BxFy gases. The plasma treatment process may modify the photoresist surface to improve LWR, LER, and scum effects by removing roughness from the photo resist surface and removing photo resist residues which may case scumming.

Abstract: The sulfonium salt does not contain a toxic metal and exhibits higher cationic polymerization performance and crosslinking performance than a tetrakis(pentafluorophenyl)borate salt. The heat- or photo-acid generator contains the sulfonium salt. The sulfonium salt is formed of a sulfonium cation selected from a group represented by general formulas (1), (9), (10) and (11) described below and a gallate anion represented by formula (a). The heat- or photo-acid generator contains the sulfonium salt. The heat- or energy ray-curable composition contains the acid generator and a cationically polymerizable compound. A cured product can be obtained by curing the same.

Abstract: An object of the present invention is to provide a treatment liquid for manufacturing a semiconductor with which the deterioration of lithographic performance or the occurrence of defects is suppressed such that a fine resist pattern or a fine semiconductor element can be manufactured. A treatment liquid for manufacturing a semiconductor according to an embodiment of the present invention includes: one compound (A) that satisfies the following requirement (a);one compound (B) or two or more compounds (B) that satisfy the following requirement (b); and one inorganic matter (C) or two or more inorganic matters (C) having any element selected from the group consisting of Al, B, S, N, and K. Here, a total content of the compound (B) in the treatment liquid is 10?10 to 0.1 mass %, and a ratio P of the inorganic matter (C) to the compound (B) represented by the following Expression I is 103 to 10?6.