Patents Examined by Daborah Chacko-Davis
  • Patent number: 10556986
    Abstract: A polymer including a structural unit represented by Chemical Formula 1, and an organic layer composition including the polymer, and method of forming patterns are provided. The Chemical Formula 1 is the same as defined in the detailed description.
    Type: Grant
    Filed: September 19, 2016
    Date of Patent: February 11, 2020
    Assignee: SAMSUNG SDI CO., LTD.
    Inventors: Youjung Park, Sunyoung Yang, Hyo Young Kwon
  • Patent number: 10553429
    Abstract: A method of forming a pattern of a semiconductor device includes forming a mask and a sacrificial layer on a substrate, etching the sacrificial layer in a first area of the substrate to form first units, each having a first width and a first distance from an adjacent unit, etching the sacrificial layer in a second area of the substrate to form second units, each having a second width equal to the first distance and being spaced apart from an adjacent unit by a second distance equal to the first width, forming a spacer conformally covering the first and second units, the spacer having a first thickness and being merged between the second units, removing a portion of the spacer on upper surfaces of the first and second units, and etching the mask in a region from which first and second units have been removed.
    Type: Grant
    Filed: November 18, 2016
    Date of Patent: February 4, 2020
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Boo Hyun Ham, Hyun Jae Kang, Sung Sik Park, Yong Kug Bae, Kwang Sub Yoon, Bum Joon Youn, Hyun Chang Lee
  • Patent number: 10551736
    Abstract: A method of designing an epitaxy template to direct self-assembly of a block copolymer on a substrate into an ordered target pattern involves providing a primary epitaxy template design and then varying the design to optimize a pattern fidelity statistic, such as placement error, relative to the target pattern by modelling predicted self-assembled block copolymer patterns and optimizing pattern placement as a function of a varied design parameter. In addition to varying a design parameter to optimize the pattern fidelity statistic, a random error in the template design is included prior to modelling predicted patterns in order to compensate for expected template inaccuracy in practice. The inclusion of a realistic random error in the template design, in addition to systematic variation of a design parameter, may improve the template design optimization to render the result less sensitive to error which may be inevitable in practice.
    Type: Grant
    Filed: July 26, 2013
    Date of Patent: February 4, 2020
    Assignee: ASML Netherlands B.V.
    Inventors: Jozef Maria Finders, Tamara Druzhinina, Emiel Peeters, Sander Frederik Wuister, Christianus Martinus Van Heesch, Eddy Cornelis Antonius Van Der Heijden, Henri Marie Joseph Boots
  • Patent number: 10551737
    Abstract: A method forms a resist underlayer film that has high resistance to dry etching using a gas containing a fluorocarbon. A method for forming a resist underlayer film includes the steps of: applying to a substrate a resist underlayer film-forming composition containing a fullerene derivative in which one to six molecules of malonic acid diester of the following Formula (1): wherein two Rs are each independently a C1-10 alkyl group, are added to one molecule of fullerene, a compound having at least two epoxy groups, and a solvent; and baking the substrate applied with the resist underlayer film-forming composition at least one time at a temperature of 240° C. or higher under an atmosphere of nitrogen, argon, or a mixture thereof.
    Type: Grant
    Filed: February 5, 2016
    Date of Patent: February 4, 2020
    Assignee: NISSAN CHEMICAL INDUSTRIES, LTD.
    Inventors: Ryo Karasawa, Tetsuya Shinjo, Keisuke Hashimoto
  • Patent number: 10545401
    Abstract: In a phase shift mask blank comprising a transparent substrate and a phase shift film deposited thereon and having a phase shift of 150-200° with respect to sub-200 nm light, the phase shift film is composed of a silicon base material consisting of silicon, nitrogen and optionally oxygen, has a thickness of up to 70 nm, and provides a warpage change of up to 0.2 ?m in a central region of a surface of the substrate before and after the deposition of the phase shift film on the substrate.
    Type: Grant
    Filed: August 13, 2018
    Date of Patent: January 28, 2020
    Assignee: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Yukio Inazuki, Takuro Kosaka
  • Patent number: 10539876
    Abstract: Provided is a method for forming a hole pattern in a resist film. The method includes forming a resist film on a workpiece; exposing the resist film using a bright field mask; removing an unexposed portion of the resist film by supplying a first developer to the resist film and performing a negative development after the exposing the resist film; modifying a sidewall portion of the resist film after the removing the unexposed portion of the resist film; and removing an exposed portion of the resist film by supplying a second developer to the resist film and performing a positive development after the modifying the sidewall portion of the resist film. The modifying the sidewall portion of the resist film is a processing of reducing solubility of the sidewall portion of the resist film in the second developer.
    Type: Grant
    Filed: December 16, 2016
    Date of Patent: January 21, 2020
    Assignee: Tokyo Electron Limited
    Inventor: Hidetami Yaegashi
  • Patent number: 10527931
    Abstract: A mask blank is provided, by which an alignment mark can be formed between a transparent substrate and a laminated structure of a light semitransmissive film, etching stopper film, and light shielding film during manufacture of a transfer mask.
    Type: Grant
    Filed: September 10, 2018
    Date of Patent: January 7, 2020
    Assignee: HOYA CORPORATION
    Inventors: Osamu Nozawa, Ryo Ohkubo, Hiroaki Shishido, Yasushi Okubo
  • Patent number: 10512166
    Abstract: A manufacturing method of a circuit board and a stamp are provided. The method includes the following steps. A circuit pattern and a dielectric layer covering the circuit pattern are formed on a dielectric substrate. A conductive via connected to the circuit pattern is formed in the dielectric layer. A photoresist material layer is formed on the dielectric layer. An imprinting process is performed on the photoresist material layer using a stamp to form a patterned photoresist layer, wherein the pressing side of the stamp facing the circuit pattern becomes sticky when subjected to pressure so as to catch photoresist residue from the photoresist material layer in the imprinting process. A patterned metal layer is formed on a region exposed by the patterned photoresist layer. The patterned photoresist layer is removed.
    Type: Grant
    Filed: September 23, 2016
    Date of Patent: December 17, 2019
    Assignee: Unimicron Technology Corp.
    Inventor: Shih-Lian Cheng
  • Patent number: 10504774
    Abstract: Methods of lithographic patterning to form interconnect structures for a chip. A hardmask layer is formed on a dielectric layer. A sacrificial layer is formed on the hardmask layer. First opening and second openings are formed in the sacrificial layer that extend through the sacrificial layer to the hardmask layer. A resist layer is formed on the sacrificial layer. An opening is formed in the resist layer that is laterally located between the first opening in the first sacrificial layer and the second opening in the first sacrificial layer. The resist layer is comprised of a metal oxide resist material that is removable selective to the hardmask layer.
    Type: Grant
    Filed: July 20, 2016
    Date of Patent: December 10, 2019
    Assignee: GLOBALFOUNDRIES INC.
    Inventors: Sunil K. Singh, Sohan S. Mehta, Sherjang Singh, Ravi P. Srivastava
  • Patent number: 10503068
    Abstract: A method for forming a resist pattern including forming a first contact hole pattern including a hole portion and a hole-unformed portion, which includes alkali developing the exposed positive-type resist film; preparing a structure including the first contact hole pattern and a first layer which covers the first contact hole pattern, which includes forming a first layer by applying a solution including an acid or a thermal acid generator onto a support on which the first contact hole pattern is formed; forming organic solvent-soluble and organic solvent-insoluble regions on the hole-unformed portion, which includes heating the structure; and forming a second contact hole pattern on the hole-unformed portion, which includes developing the heated structure with an organic solvent.
    Type: Grant
    Filed: December 1, 2016
    Date of Patent: December 10, 2019
    Assignee: TOKYO OHKA KOGYO CO., LTD.
    Inventors: Takayoshi Mori, Ryoji Watanabe, Yoichi Hori
  • Patent number: 10497610
    Abstract: Methods of lithographic patterning a dielectric layer. A first resist layer is formed on a hardmask layer, and a second resist layer is formed on the first resist layer. The second resist layer is patterned to form a first opening, which is transferred from the second resist layer to the first resist layer. The second resist layer is removed from the first resist layer after the first opening is transferred from the second resist layer to the first resist layer. The first resist layer is patterned to form a second opening laterally displaced in the first resist layer from the first opening. The first resist layer is comprised of a metal oxide photoresist that is removable selective to the hardmask layer. The hardmask layer and the dielectric layer may be subsequently patterned using first resist layer.
    Type: Grant
    Filed: December 6, 2016
    Date of Patent: December 3, 2019
    Assignee: GLOBALFOUNDRIES INC.
    Inventors: Ravi Srivastava, Sunil K. Singh
  • Patent number: 10490519
    Abstract: Techniques are disclosed for realizing a two-dimensional target lithography feature/pattern by decomposing (splitting) it into multiple unidirectional target features that, when aggregated, substantially (e.g., fully) represent the original target feature without leaving an unrepresented remainder (e.g., a whole-number quantity of unidirectional target features). The unidirectional target features may be arbitrarily grouped such that, within a grouping, all unidirectional target features share a common target width value. Where multiple such groupings are provided, individual groupings may or may not have the same common target width value. In some cases, a series of reticles is provided, each reticle having a mask pattern correlating to a grouping of unidirectional target features. Exposure of a photoresist material via the aggregated series of reticles substantially (e.g., fully) produces the original target feature/pattern.
    Type: Grant
    Filed: March 31, 2017
    Date of Patent: November 26, 2019
    Assignee: INTEL CORPORATION
    Inventors: Charles H. Wallace, Hossam A. Abdallah, Elliot N. Tan, Swaminathan Sivakumar, Oleg Golonzka, Robert M. Bigwood
  • Patent number: 10488750
    Abstract: In a mask blank comprising a transparent substrate and a single layer or multilayer film formed thereon, the film is formed only on the front surface of the substrate, but not on the side surface, chamfer, front surface-chamfer boundary, and back surface-chamfer boundary. The mask blank contains few particle defects, especially the number of particle defects with a certain size is zero.
    Type: Grant
    Filed: March 11, 2016
    Date of Patent: November 26, 2019
    Assignee: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Yukio Inazuki, Hideo Kaneko
  • Patent number: 10490402
    Abstract: A processing method is disclosed that enables an improved directed self-assembly (DSA) processing scheme by allowing the formation of improved guide strips in the DSA template that may enable the formation of sub-30 nm features on a substrate. The improved guide strips may be formed by improving the selectivity of wet chemical processing between different organic layers or films. In one embodiment, treating the organic layers with one or more wavelengths of ultraviolet light may improve selectivity. The first wavelength of UV light may be less than 200 nm and the second wavelength of UV light may be greater than 200 nm.
    Type: Grant
    Filed: August 22, 2014
    Date of Patent: November 26, 2019
    Assignee: Tokyo Electron Limited
    Inventors: Mark Somervell, Ian Brown, Ihsan Simms, Ainhoa Negreira, Kathleen Nafus
  • Patent number: 10468249
    Abstract: A lithography method is provided in accordance with some embodiments. The lithography method includes forming a metal-containing layer on a substrate, the metal-containing layer including a plurality of conjugates of metal-hydroxyl groups; treating the metal-containing layer at temperature that is lower than about 300° C. thereby causing a condensation reaction involving the plurality of conjugates of metal-hydroxyl groups; forming a patterned photosensitive layer on the treated metal-containing layer; and developing the patterned photosensitive layer so as to allow at least about 6% decrease of optimum exposure (Eop).
    Type: Grant
    Filed: September 28, 2015
    Date of Patent: November 5, 2019
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chien-Chih Chen, Chien-Wei Wang
  • Patent number: 10465276
    Abstract: The present invention relates to methods for fabricating a laterally-limited two-dimensional structure through template synthesis. The methods of the invention are useful in forming homogenous and heterogeneous layered materials. The invention also provides structures and devices formed by the method of the present invention and uses thereof.
    Type: Grant
    Filed: January 11, 2016
    Date of Patent: November 5, 2019
    Assignee: The Penn State Research Foundation
    Inventors: Joshua Alexander Robinson, Sarah Marie Eichfeld, Aleksander Felipe Piasecki, Brian Michael Bersch
  • Patent number: 10468250
    Abstract: A rinse solution includes a surfactant and deionized water. The surfactant includes a compound having a branched structure, the compound having a branched structure including a hydrophobic group-containing main chain and a plurality of side chains that are branched from the main chain and have at least one hydrophilic functional group. A method of fabricating an integrated circuit device includes forming a photoresist pattern, followed by applying the rinse solution onto the photoresist pattern.
    Type: Grant
    Filed: October 28, 2016
    Date of Patent: November 5, 2019
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Ju-young Kim, Jeong-ju Park, Jin Park, Hai-sub Na
  • Patent number: 10431457
    Abstract: A method for forming a patterned structure includes following steps. First lines elongated in a first direction and second lines elongated in a second direction in a layout pattern are decomposed into two masks. A first mask includes first line patterns and a first block pattern. A second mask includes second line patterns and a second block pattern. Two photolithography processes with the first mask and the second mask are performed for forming a patterned structure including first line structures and second line structures. Each first line structure is elongated in the first direction. The first line structures are defined by a region where the first line patterns and the second block pattern overlap with one another. Each second line structure is elongated in the second direction. The second line structures are defined by a region where the second line patterns and the first block pattern overlap with one another.
    Type: Grant
    Filed: November 25, 2016
    Date of Patent: October 1, 2019
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: En-Chiuan Liou, Yu-Cheng Tung
  • Patent number: 10429738
    Abstract: A filtration filter used for filtering a liquid chemical for lithography, provided with a polyimide resin porous membrane; a filtration method including allowing a liquid chemical for lithography to pass through the filtration filter; and a production method of a purified liquid chemical product for lithography, including filtering a liquid chemical for lithography by the filtration method.
    Type: Grant
    Filed: September 27, 2016
    Date of Patent: October 1, 2019
    Assignee: TOKYO OHKA KOGYO CO., LTD.
    Inventors: Akihiko Nakata, Akihito Morioka, Tsukasa Sugawara
  • Patent number: 10429740
    Abstract: A method of recovering a defect portion of a resist pattern formed on a substrate including applying a shrinking agent composition so as to cover the resist pattern having the defect portion; forming a developing solution-insoluble region on the surface of the resist pattern; and developing the covered resist pattern, the shrinking agent composition including a polymeric compound (X) which is a homopolymer or a random copolymer.
    Type: Grant
    Filed: March 15, 2016
    Date of Patent: October 1, 2019
    Assignee: TOKYO OHKA KOGYO CO., LTD.
    Inventors: Junichi Tsuchiya, Rikita Tsunoda, Daichi Takaki, Miki Shinomiya, Masafumi Fujisaki