Patents Examined by Daborah Chacko-Davis
  • Patent number: 10429738
    Abstract: A filtration filter used for filtering a liquid chemical for lithography, provided with a polyimide resin porous membrane; a filtration method including allowing a liquid chemical for lithography to pass through the filtration filter; and a production method of a purified liquid chemical product for lithography, including filtering a liquid chemical for lithography by the filtration method.
    Type: Grant
    Filed: September 27, 2016
    Date of Patent: October 1, 2019
    Assignee: TOKYO OHKA KOGYO CO., LTD.
    Inventors: Akihiko Nakata, Akihito Morioka, Tsukasa Sugawara
  • Patent number: 10429740
    Abstract: A method of recovering a defect portion of a resist pattern formed on a substrate including applying a shrinking agent composition so as to cover the resist pattern having the defect portion; forming a developing solution-insoluble region on the surface of the resist pattern; and developing the covered resist pattern, the shrinking agent composition including a polymeric compound (X) which is a homopolymer or a random copolymer.
    Type: Grant
    Filed: March 15, 2016
    Date of Patent: October 1, 2019
    Assignee: TOKYO OHKA KOGYO CO., LTD.
    Inventors: Junichi Tsuchiya, Rikita Tsunoda, Daichi Takaki, Miki Shinomiya, Masafumi Fujisaki
  • Patent number: 10409152
    Abstract: Techniques are disclosed for realizing a two-dimensional target lithography feature/pattern by decomposing (splitting) it into multiple unidirectional target features that, when aggregated, substantially (e.g., fully) represent the original target feature without leaving an unrepresented remainder (e.g., a whole-number quantity of unidirectional target features). The unidirectional target features may be arbitrarily grouped such that, within a grouping, all unidirectional target features share a common target width value. Where multiple such groupings are provided, individual groupings may or may not have the same common target width value. In some cases, a series of reticles is provided, each reticle having a mask pattern correlating to a grouping of unidirectional target features. Exposure of a photoresist material via the aggregated series of reticles substantially (e.g., fully) produces the original target feature/pattern.
    Type: Grant
    Filed: January 30, 2017
    Date of Patent: September 10, 2019
    Assignee: INTEL CORPORATION
    Inventors: Charles H. Wallace, Hossam A. Abdallah, Elliot N. Tan, Swaminathan Sivakumar, Oleg Golonzka, Robert M. Bigwood
  • Patent number: 10409157
    Abstract: A pattern forming method includes forming a first film on a first layer and a second film on the first film. First and second concave portions are formed in the second film. A third film is formed in the concave portions and a fourth film comprising a polymer is formed on the third film. The fourth film can be processed to phase separate and form a pattern in at least the first opening. The pattern formed in the fourth film can be used in patterning films thereunder. A fifth film can be formed which covers the first concave portion and does not cover the second concave portion. The third film in the second concave portion and the first film under the second concave portion can be processed using the fifth film. The first layer can be patterned using the first, second, or third film as a mask.
    Type: Grant
    Filed: August 10, 2016
    Date of Patent: September 10, 2019
    Assignee: TOSHIBA MEMORY CORPORATION
    Inventor: Yusuke Kasahara
  • Patent number: 10409159
    Abstract: The present teachings relate to a photopatternable composition including a vinylidene fluoride-based polymer, a photosensitive non-nucleophilic base, and a crosslinking agent. The photopatternable composition can be used to prepare a patterned thin film component for use in an electronic, optical, or optoelectronic device such as an organic thin film transistor. The patterned thin film component can be used as a gate dielectric with a high dielectric constant, for example, a dielectric constant greater than 10.
    Type: Grant
    Filed: December 26, 2016
    Date of Patent: September 10, 2019
    Assignee: Flexterra, Inc.
    Inventors: Wei Zhao, Antonio Facchetti, Yan Zheng, Andrea Stefani, Mauro Riva, Caterina Soldano, Michele Muccini
  • Patent number: 10401730
    Abstract: A method for producing a microstructure provided with a member in which, on a substrate having a plurality of concave shapes processed thereon, a dry film resist is subjected to tenting on open faces of a plurality of concave shapes, and then openings are formed in the dry film resist where divided exposure is performed such that patterning is performed with first exposure light and second exposure is performed to cause overexposure.
    Type: Grant
    Filed: August 2, 2016
    Date of Patent: September 3, 2019
    Assignee: Canon Kabushiki Kaisha
    Inventor: Tetsushi Ishikawa
  • Patent number: 10391485
    Abstract: A microfluidic device useable for performing live cell computed tomography imaging is fabricated with a cover portion including a first wafer with at least one metal patterned thereon, a base portion including a second wafer with at least one metal patterned thereon and negative photoresist defining recesses therein, and a diffusive bonding layer including a negative photoresist arranged to join the cover portion and the base portion. A composition useful in live cell computer topography includes a long-chain polysaccharide at a concentration of from about 0.01% to about 10.0% in cell culture medium for supporting cell life while enabling cell rotation rate to be slowed to a speed commensurate with low light level imaging.
    Type: Grant
    Filed: September 25, 2014
    Date of Patent: August 27, 2019
    Assignee: ARIZONA BOARD OF REGENTS, A BODY CORPORATE OF THE STATE OF ARIZONA, ACTING FOR AND ON BEHALF OF ARIZONA STATE UNIVERSITY
    Inventors: Deirdre Meldrum, Roger Johnson, Iniyan Soundappa Elango, Andrew Shabilla, Hong Wang, Jakrey Myers, Laimonas Kelbauskas, Dean Smith, Pimwadee Limsirichai
  • Patent number: 10385295
    Abstract: A method of reducing defects of a semiconductor substrate whereby the substrate is rinsed with an aqueous composition containing a gemini additive of the general formula I after the development of a photoresist or a photolithographic mask wherein X is a divalent group, R1, R2, R3 and R4 are substituted or unsubstituted monovalent groups, n is an integer from 1 to 5, or 1 to 10000 depending on R3 and R4, z is an integer, which is chosen so that the overall surfactant is electrically uncharged, and Z is a counter-ion.
    Type: Grant
    Filed: July 1, 2013
    Date of Patent: August 20, 2019
    Assignee: BASF SE
    Inventors: Andreas Klipp, Andrei Honciuc, Guenter Oetter, Christian Bittner
  • Patent number: 10386724
    Abstract: A photoresist, a patterning method of a quantum dot layer, a QLED, a quantum dot color filter and a display device are disclosed, which can solve the problem that current patterning methods destroy quantum dots. The patterning method of a quantum dot layer includes the steps of: forming a hydrophilic photoresist pattern which comprises forming a photoresist material layer on a substrate by using a photoresist, patterning the photoresist material layer to form a photoresist pattern, and subjecting the photoresist to hydrophilic treatment; applying quantum dots; removing the quantum dots retained on the photoresist pattern; and stripping the photoresist pattern. The patterning method of a quantum dot layer in the present disclosure can improve the hydrophilic performance of the photoresist and reduce the adhesion of the lipophilic quantum dots on the photoresist.
    Type: Grant
    Filed: September 29, 2015
    Date of Patent: August 20, 2019
    Assignee: BOE Technology Group Co., Ltd.
    Inventors: Bin Zhang, Tingting Zhou, Feng Zhang, Wei Zhang, Jincheng Gao
  • Patent number: 10381361
    Abstract: Embodiments of the inventive concepts provide a method for manufacturing a semiconductor device. The method includes forming a stack structure including insulating layers and sacrificial layers which are alternately and repeatedly stacked on a substrate. A first photoresist pattern is formed on the stack structure. A first part of the stack structure is etched to form a stepwise structure using the first photoresist pattern as an etch mask. The first photoresist pattern includes a copolymer including a plurality of units represented by at least one of the following chemical formulas 1 to 3, wherein “R1”, “R2”, “R3”, “p”, “q” and “r” are the same as defined in the description.
    Type: Grant
    Filed: March 10, 2017
    Date of Patent: August 13, 2019
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Suk Koo Hong, Miyeong Kang, Hyosung Lee, Kyoungyong Cho, Sunkak Jo
  • Patent number: 10372030
    Abstract: A halftone phase shift mask blank is provided comprising a transparent substrate and a halftone phase shift film which is composed of a silicon base material having a Si+N+O content of at least 90 at %, a Si content of 30-70 at %, a N+O content of 30-60 at %, and an O content of up to 30 at %, and has a thickness of up to 70 nm. The halftone phase shift film is thin enough for mask pattern processing, undergoes minimal pattern size variation degradation upon exposure to sub-200 nm radiation, and maintains a necessary phase shift and transmittance.
    Type: Grant
    Filed: March 22, 2016
    Date of Patent: August 6, 2019
    Assignee: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Kouhei Sasamoto, Takuro Kosaka, Yukio Inazuki, Hideo Kaneko
  • Patent number: 10365558
    Abstract: An apparatus for manufacturing a pellicle, the apparatus comprising: a stressing assembly for stressing a film; and a substrate support for supporting a substrate, the stressing assembly and the substrate support being capable of relative movement so as to bring the substrate into contact with the film when the film is stressed.
    Type: Grant
    Filed: November 19, 2014
    Date of Patent: July 30, 2019
    Assignee: ASML Netherlands B.V.
    Inventors: Maarten Mathijs Marinus Jansen, Juan Diego Arias Espinoza, Johannes Peterus Henricus De Kuster
  • Patent number: 10365555
    Abstract: In a mask blank having a structure in which a light-semitransmissive film and a light-shielding film are laminated on a main surface of a transparent substrate, the light-semitransmissive film is made of a material that can be dry-etched with an etching gas containing a fluorine-based gas, the light-shielding film is made of a material that contains tantalum and one or more elements selected from hafnium and zirconium and contains no oxygen except in a surface layer thereof, an etching stopper film is provided between the light-semitransmissive film and the light-shielding film, and the etching stopper film is made of a material that contains chromium with an oxygen content of 20 at % or less.
    Type: Grant
    Filed: May 19, 2014
    Date of Patent: July 30, 2019
    Assignee: HOYA CORPORATION
    Inventors: Hiroaki Shishido, Osamu Nozawa, Ryo Ohkubo
  • Patent number: 10361286
    Abstract: An IC manufacturing method includes forming first mandrels and second mandrels over a substrate; and forming first spacers on sidewalls of the first mandrels and second spacers on sidewalls of the second mandrels. Each of the first and second spacers has a loop structure with two curvy portions connected by two lines. The method further includes removing the first and second mandrels; and removing the curvy portions from each of the first spacers without removing the curvy portions from the second spacers. The second spacers are used for monitoring variations of the IC fabrication processes.
    Type: Grant
    Filed: June 24, 2016
    Date of Patent: July 23, 2019
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chi-Che Tseng, Chen-Yuan Wang, Wilson Hsieh, Yi-Hung Lin, Chung-Li Huang
  • Patent number: 10353291
    Abstract: A method of forming a photosensitive resin layer including laminating a photosensitive resin layer including a chemically amplified positive-type photosensitive resin composition which includes an acid generator which generates an acid upon light exposure and generates an acid by heating on a metal surface having catalytic activity, a resin whose solubility in alkali increases under the action of an acid, and an organic solvent, on an catalytic activity-containing metal surface of a substrate; and heating the photosensitive resin layer, so that the solubility in alkali of the photosensitive resin layer increases as the layer becomes closer to an interface with the substrate.
    Type: Grant
    Filed: March 10, 2016
    Date of Patent: July 16, 2019
    Assignee: TOKYO OHKA KOGYO CO., LTD.
    Inventors: Eiichi Shimura, Shinji Kumada, Aya Momozawa
  • Patent number: 10353293
    Abstract: The conductive pattern formation method according to the present invention comprises a step of providing a photosensitive conductive film including a conductive layer containing conductive fibers, a photosensitive resin layer containing a photosensitive resin and an inorganic filler, and a support film in this order, and laminating the conductive layer and the photosensitive resin layer on a base material such that the conductive layer side is closely bonded to the base material, and a step of exposing and developing the photosensitive resin layer and the conductive layer on the base material to form a conductive pattern.
    Type: Grant
    Filed: August 28, 2014
    Date of Patent: July 16, 2019
    Assignee: HITACHI CHEMICAL COMPANY, LTD.
    Inventors: Masahiko Ebihara, Emiko Oota, Yasuharu Murakami, Hiroshi Yamazaki, Hiroyuki Tanaka
  • Patent number: 10345705
    Abstract: Methods herein form a photoresist on an exterior of a cylinder and expose the photoresist to a light source while rotating the cylinder. Such methods develop the photoresist, after exposing, to change the photoresist into a patterned protective layer on the exterior of the cylinder. Then, these methods pattern the exterior of the cylinder while rotating the cylinder using the patterned protective layer to produce a patterned cylinder.
    Type: Grant
    Filed: July 12, 2013
    Date of Patent: July 9, 2019
    Assignee: Xerox Corporation
    Inventors: Karl E. Kurz, Amir Prizant, Christopher D. Blair
  • Patent number: 10349525
    Abstract: The present disclosure concerns an electrical circuit pattern on a substrate, as well as a method and system for forming same. In a typical embodiment, a light pattern is projected through a transparent layer to cause a patterned release of adhesion between a continuous material layer and the transparent layer. A release layer adhered to the patterned material layer is pulled off the substrate to separate the material having lower adhesion while leaving the material that was not exposed to form the electrical circuit pattern thereon.
    Type: Grant
    Filed: October 29, 2014
    Date of Patent: July 9, 2019
    Assignee: Nederlandse Organisatie voor toegepast-natuurwetenschappelijk onderzoek TNO
    Inventors: Rob Jacob Hendriks, Edsger Constant Pieter Smits, Sandeep Menon Perinchery, Pim Groen
  • Patent number: 10331026
    Abstract: A photographic mask is provided in the present disclosure. The photographic mask includes a silicon-on-insulator (SOI) base and a stepped opening formed in the SOI base. The SOI base includes a silicon substrate, a median layer and a silicon layer, the median layer is arranged between the insulator substrate and the insulator layer. The stepped opening includes a first opening portion and a second opening portion, the first opening portion penetrates through the silicon layer and has a first opening area; the second opening portion at least penetrates through the silicon substrate and is aligned with the first opening portion. The second opening portion has a second opening area greater than the first opening area of the first opening portion. The present disclosure further provides a method for making a photographic mask.
    Type: Grant
    Filed: March 15, 2016
    Date of Patent: June 25, 2019
    Assignee: AAC ACOUSTIC TECHNOLOGIES (SHENZHEN) CO., LTD.
    Inventors: Linlin Wang, Ye Zhou, ChengYen Liu, Zhenkui Meng
  • Patent number: 10319735
    Abstract: Embodiments of the inventive concept provide a method for manufacturing a semiconductor device. The method includes forming a stack structure by alternately and repeatedly stacking insulating layers and sacrificial layers on a substrate, sequentially forming a first lower layer and a first photoresist pattern on the stack structure, etching the first lower layer using the first photoresist pattern as an etch mask to form a first lower pattern. A first part of the stack structure is etched to form a stepwise structure using the first lower pattern as an etch mask. The first lower layer includes a novolac-based organic polymer, and the first photoresist pattern includes a polymer including silicon.
    Type: Grant
    Filed: March 10, 2017
    Date of Patent: June 11, 2019
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Suk Koo Hong, Miyeong Kang, Hyosung Lee, Kyoungyong Cho, Bora Kim, Hyeji Kim, Sunkak Jo