Abstract: Provided is a submount flip-chip bonded to a semiconductor laser diode chip with stepped first and second electrodes. The submount includes a substrate having first and second surfaces which are separated by a step height corresponding to a height difference between the first and second electrodes; first and second metal layers being formed to the same thickness on the first and second surfaces, respectively; and first and second solder layers being formed to the same thickness on the first and second metal layers, respectively, and being bonded to the first and second electrodes, respectively.

Abstract: A semiconductor laser device includes: a first cladding layer, which is made of a nitride semiconductor of a first conductivity type and is formed over a substrate; an active layer, which is made of another nitride semiconductor and is formed over the first cladding layer; and a second cladding layer, which is made of still another nitride semiconductor of a second conductivity type and is formed over the active layer. A spontaneous-emission-absorbing layer, which is made of yet another nitride semiconductor of the first conductivity type and has such an energy gap as absorbing spontaneous emission that has been radiated from the active layer, is formed between the substrate and the first cladding layer.

Abstract: A modelocked linear fiber laser cavity with enhanced pulse-width control includes concatenated sections of both polarization-maintaining and non-polarization-maintaining fibers. Apodized fiber Bragg gratings and integrated fiber polarizers are included in the cavity to assist in linearly polarizing the output of the cavity. Very short pulses with a large optical bandwidth are obtained by matching the dispersion value of the fiber Bragg grating to the inverse of the dispersion of the intra-cavity fiber.

Abstract: An adjustable laser module has a main body, a laser generator provided in the hollow interior of the main body at a first end thereof for emitting a laser beam, a cylindrical lens provided in the hollow interior at a second end thereof, a first adjusting device coupled to the first end and the laser generator for adjusting the angle of the laser generator with respect to the main body, and a second adjusting device coupled to the second end and the cylindrical lens for adjusting the angle of the cylindrical lens with respect to the main body.

Abstract: A laser is disclosed which includes a gain medium, a switch element, and a pulse controller. In one embodiment laser light of differing polarizations pass along respective paths and a pulsed laser output is generated via an electro-optical element. In another embodiment light of differing polarizations passes in differing directions through a cyclical path. The invention can make use of a prism-shaped polarizer having a polarization selection face and two further faces. Yet further initial pulses can be controlled to reduce energy, for example by progressively increasing the period or amplitude of successive pulses. As a result an efficient and high power laser apparatus is realized.

Abstract: A high pulse energy, side pumped laser is provided. The laser has an optical cavity formed between a first and a second reflective surface. A lasing medium is located within the cavity along its optical axis. A plurality of diode bars are provided in optical communication with the lasing medium preferably a lasing rod. The diode bars supply electromagnetic radiation to the lasing rod. The diode bars are configured about the lasing rod so that electromagnetic radiation from the diodes bars propagates through the lasing rod on a plurality of substantially nonintersecting paths. Since the lasing rod is side pumped, the substantially nonintersecting paths traverse the lasing rod substantially perpendicular to the direction of propagation of energy in the laser cavity.

Abstract: A wavelength division multiplexing system based on arrays of wavelength tunable lasers and wavelength tunable resonant photodetectors is disclosed. The system allows self-adjusting of the resonance wavelength of the wavelength tunable photodetectors to the wavelengths of the laser light emitted by the lasers. No precise wavelength stabilization of the lasers is required.

Abstract: The present invention provides a ridge-type semiconductor laser devise comprising: a lower cladding layer of a first conductivity type, an active layer, and a first upper cladding layer of a second conductivity type, which are sequentially stacked on a compound semiconductor substrate of the first conductivity type; a second upper cladding layer of the second conductivity type which has a ridge shape and is provided on the first upper cladding layer; and a contact layer of the second conductivity type provided on the second upper cladding layer. Current blocking layers are provided on the first upper cladding layer, alongside the second upper cladding layer. Respective sections of these current blocking layers that follow the sides of the second upper cladding layer are of the second conductivity type, and respective sections of these current blocking layers that follow the first upper cladding layer are of the first conductivity type.

Abstract: A method for making a laser driver circuit for burst mode is described. A continuous mode laser driver circuit can be used in burst mode transmission system by using the method. The method is described as follows. First, a continuous mode laser driver chip is selected, the chip has a temperature compensation output and a pulse width adjustment input. Next, the temperature compensation signal from the temperature compensation output is converted to a pulse width adjustment signal using an eye diagram adjustment circuit, and the pulse width adjustment signal is sent to the pulse width adjustment input. The pulse width adjustment signal automatically adjusts the cross points of the eye diagram of the laser according to the environmental temperature, so that the cross points are sustained at a predetermined level to reduce the Bit Error Rate.

Abstract: A transmitter optical subassembly includes an optical emitter and a fiber receptacle within which an optical fiber is received. An optical limiting element is positioned between the optical emitter and the fiber receptacle. When an optical signal is emitted from the optical emitter, the optical signal passes through the optical limiting element before the optical signal reaches the fiber receptacle and is received by the optical fiber. The optical limiting element has a property such that if the power of the optical signal entering the optical limiting element exceeds a predetermined limit, the power of the optical signal is optically attenuated so that the power of the optical signal exiting the optical limiting element remains below a predetermined limit.

Abstract: An oscillator-amplifier gas discharge laser system and method is disclosed which may comprise a first laser unit which may comprise a first discharge region which may contain an excimer or molecular fluorine lasing gas medium; a first pair of electrodes defining the first discharge region containing the lasing gas medium, a line narrowing unit for narrowing a spectral bandwidth of output laser light pulse beam pulses produced in said first discharge region; a second laser unit which may comprise a second discharge chamber which may contain an excimer or molecular fluorine lasing gas medium; a second pair of electrodes defining the second discharge region containing the lasing gas medium; a pulse power system providing electrical pulses to the first pair of electrodes and to the second pair of electrodes producing gas discharges in the lasing gas medium between the respective first and second pair of electrodes, and laser parameter control mechanism modifying a selected parameter of a selected laser output lig

Abstract: A solid-state laser system includes a solid-state laser having a laser gain medium and at least one pumping diode. The system also includes a thermal management system capable of placing a coolant in thermal communication with the solid-state laser such that the coolant can carry heat away from the solid-state laser. The thermal management system is then capable of rejecting the heat carried away by the coolant to a fluid at an ambient temperature, where the coolant can be at a temperature between 40° C. and 80° C. when the thermal management system rejects the heat. Advantageously, the thermal management system of the present invention can include reject the heat to a fluid comprising, for example, air or water. As such, the thermal management system does not require separate cooling of the fluid carrying the heat away from the coolant.

Abstract: A Q-switch laser device for outputting a pulse laser from an optical resonator is equipped with a Q-switch for changing high/low values of a Q-value for the resonator; a switch-pulse generation means for generating a switch pulse with a frequency for determining a repetition period of the pulse laser; an RF oscillation means for generating an RF signal with a frequency higher than that of the switch pulse; a pulse synchronization means for inputting the switch pulse and RF signal and outputting a phase-synchronization pulse, where arising timing of the former is synchronized with a phase of the latter; and an RF modulation means for inputting the phase-synchronization pulse and outputting the RF signal as an RF modulation signal of the RF signal made ON/OFF, corresponding to a period of L/H-levels of an input pulse, wherein the Q-switch changes the Q-value of the resonator to the high/low values.

Abstract: Alternative laser structures, which have potentially the same tuning performance as (S)SG-DBR and GCSR lasers, and a fabrication process which is similar to that of the (S)SG-DBR laser, are presented. The advantage of these structures is that the output power does not pass through a long passive region.

Abstract: Screenable vertical cavity surface emitting lasers (VCSELs) and methods of manufacturing the same are described. These systems and methods address the unique susceptibility of these devices to damage that otherwise might be caused by moisture intrusion into the etch holes that are used to form the index-guiding confinement regions. In one aspect, a VCSEL includes a vertical stack structure having a top surface. The vertical stack structure includes a top mirror, a bottom mirror, and a cavity region that is disposed between the top mirror and the bottom mirror and includes an active light generation region. At least one of the top mirror and the bottom mirror has at least one layer defining an aperture region. The vertical stack structure defines at least one sidewall area extending from the top surface to at least a depth corresponding to the aperture region. The is VCSEL further includes a defect indicator system that is disposed in a screening region at the sidewall area.

Abstract: A wavelength tunable mode-locked laser system including a complex laser cavity comprising a broadband reflective mirror at one end and a wavelength chirped selective mirror at the other end. The system further includes a gain element and a low finesse Fabry-Perot etalon element inside the laser cavity. The gain element may be a semiconductor laser chip, with a broadband high reflection coating at one end and a partially reflecting coating at its other end. The gain element has a well-defined length, such that its longitudinal modes match a required optical frequency grid. The system also includes an active modulation element applied externally on said complex laser cavity to provide mode-locking of a specific cavity length among said defined predetermined cavity lengths, such that all possible optical frequencies emitted by the laser system are stabilized to the linear grid dictated by the Fabry-Perot longitudinal modes, that could be in accordance with the International Telecommunications Union Standards.

Abstract: A solid-state eye-safe laser and method with gain boost by dual-wavelength, synchronized pumplights. The laser includes a medium doped with ions that emit light at a laser wavelength as a result of the transition of electron energy from an upper energy level manifold to a lower energy level manifold. A first pumplight couples energy into the medium at a first wavelength that excites a first portion of the ions into said upper energy level manifold. A second pumplight couples energy into said medium at a second wavelength that excites a second portion of the ions to a third energy level manifold. A fraction of the ions relax to the upper energy level manifold and thereby increase the gain of the laser (2). The laser may be an erbium crystal laser, using yttrium-aluminum-garnet operating near 1640 nanometers.

Abstract: A laser transmitter adapted for use in small spaces such as pipes and sewers includes a housing having two exit windows positioned in generally orthogonal planes. The laser transmitter includes a leveling mechanism that is capable of directing a collimated beam through a select one of the two exit windows, in a generally horizontal direction at a specified grade irrespective of whether the laser transmitter is oriented generally horizontally or generally vertically.

Abstract: A substrate structure useful for photonics modules comprises a high-thermal-conductivity (e.g., greater than 20 W/m°K) substrate body with a low-thermal-conductivity (e.g., less than 5 W/m°K) dielectric layer overlying at least a portion of the substrate body. Patterned metal layers for electrical circuit connections can be located on the dielectric layer, on the substrate body (under the dielectric layer, on regions of exposed substrate body, or both), or on both. Where the laser is driven at high frequencies (e.g., 2.5 Gbits/sec), the dielectric layer material and thickness can be chosen to provide desired RF behavior. For example, the electrodes and dielectric layer can be configured to provide a transmission line with the desired impedance. Further, where it is desired to solder a component to the substrate, a heater resistor can be formed on the dielectric layer, thereby facilitating soldering the component.

Abstract: A light beam scanning device includes a light source section, a deflector and a reflection type optical system. The light source section is provided with three laser light sources. These laser light sources utilizes different modulation systems depending on corresponding semiconductor lasers. That is, the red-light laser light source and the blue-light laser light source each utilize a direct modulation system and the green-light laser light source utilizes an external modulation system using an external modulator (AOD). Reflecting mirrors and, the deflector and an arcsine mirror, which form the reflection type optical system, are arranged sequentially along an optical path at the side of the light source section from which light is emitted. Accordingly, laser light emitted from the light source section is guided only by the reflection type optical system to a recording material. As a result, no correction for light beams of different wavelengths is required.