Abstract: A method of polishing a SiC substrate by supplying a polishing liquid and bringing a polishing pad into contact with the SiC substrate is provided. The polishing liquid contains a permanganate, inorganic salts having an oxidizing ability, and water. The method includes: a first polishing step of polishing the SiC substrate by use of a first polishing pad; and a second polishing step of polishing the SiC substrate by use of a second polishing pad softer than the first polishing pad after the first polishing step.

Abstract: A method of forming an implant to be implanted into living bone is disclosed. The method comprises the act of roughening at least a portion of the implant surface to produce a microscale roughened surface. The method further comprises the act of immersing the microscale roughened surface into a solution containing hydrogen peroxide and a basic solution to produce a nanoscale roughened surface consisting of nanopitting superimposed on the microscale roughened surface. The nanoscale roughened surface has a property that promotes osseointegration.

Abstract: One illustrative method disclosed herein includes, among other things, forming an original fin-formation etch mask comprised of a plurality of original line-type features and removing at least a portion of at least one of the plurality of original line-type features so as to thereby define a modified fin-formation etch mask comprising the remaining portions of the plurality of original line-type features. The method also includes forming a conformal layer of material on the remaining portions of the plurality of original line-type features of the modified fin-formation etch mask and performing at least one etching process to remove at least portions of the conformal layer of material and to define a plurality of fin-formation trenches so as to thereby initially define a plurality of fins in the substrate.

Abstract: The method includes forming a graphite layer on a substrate, forming a supporting layer on the graphite layer to form a stack of the graphite layer and the supporting layer, removing the substrate to separate the stack from the substrate, transferring the stack of the graphite layer and the supporting layer onto a frame, and removing the supporting layer from the frame.

Abstract: In a method of manufacturing a semiconductor device, sacrificial layer patterns extending in a first direction are formed on an etch target layer. Preliminary mask patterns are formed on opposite sidewall surfaces of each of the sacrificial layer patterns. A filling layer is formed to fill a space between the preliminary mask patterns. Upper portions of the preliminary mask patterns are etched to form a plurality of mask patterns. Each of the mask patterns is symmetric with respect to a plane passing a center point of each of the mask patterns in a second direction substantially perpendicular to the first direction and extending in the first direction. The sacrificial layer patterns and the filling layer are removed. The etch target layer is etched using the mask patterns as an etching mask to form a plurality of target layer patterns.

Abstract: Disclosed herein is an epitaxial growth apparatus for growing an epitaxial layer on a surface of a wafer. The apparatus includes: a chamber in which the wafer is housed; an upper lamp group that includes a plurality of heating lamps arranged in a ring above the chamber; a lower lamp group that includes a plurality of heating lamps provided below the chamber; a reflection member that is provided inside the ring of the upper lamp group, the reflection member having a substantially cylindrical shape; and an additional reflection member that is provided inside the reflection member, the additional reflection member including a reflection surface that is substantially parallel to the surface of the wafer. The additional reflection member is provided in such a way as to close at least part of an opening of a lower end portion of the reflection member.

Abstract: A method for producing polarized eyewear is disclosed, which includes providing a polarizing film or a blank of the eyewear having a polarizing film, whereby the polarizing film is made of a substrate film and a polarizing agent; dipping the polarizing film or the blank with the polarizing film into a solvent; and dissolving the polarizing agent from the polarizing film.

Abstract: In one embodiment, a substrate treatment apparatus includes a housing configured to house a substrate. The apparatus further includes a chemical supplying module configured to supply one or more chemicals in a gas state to the substrate in the housing, the one or more chemicals including a first chemical that contains a silylation agent. The apparatus further includes a cooling module configured to cool the substrate in the housing while any of the one or more chemicals is supplied to the substrate in the housing.

Abstract: A method provides a magnetic transducer having a media-facing surface (MFS). The method includes providing a pole, providing a side gap, providing coil(s) for energizing the pole and providing side shield(s). A portion of the pole resides at the MFS. The side gap is between the pole and the side shield(s). The side shield(s) have a gradient in a saturation magnetization such that the saturation magnetization increases in a yoke direction perpendicular to the MFS. The step of providing the side shield(s) further includes providing a nonmagnetic structure having a side surface parallel to the MFS and providing at least one side shield layer. A portion of the side shield layer(s) are on the side surface. The portion of the side shield layer(s) has the gradient in the saturation magnetization. At least part of the side shield being formed by the portion of the side shield layer(s).

Abstract: A method of manufacturing a glass substrate to control the fragmentation characteristics by etching and filling trenches in the glass substrate is disclosed. An etching pattern may be determined. The etching pattern may outline where trenches will be etched into a surface of the glass substrate. The etching pattern may be configured so that the glass substrate, when fractured, has a smaller fragmentation size than chemically strengthened glass that has not been etched. A mask may be created in accordance with the etching pattern, and the mask may be applied to a surface of the glass substrate. The surface of the glass substrate may then be etched to create trenches. A filler material may be deposited into the trenches.

Abstract: Silicon deposited by CVD and/or silico dust is removed from a polycrystalline silicon deposition reactor component by abrasion with silicon-containing particles in a gas stream.

Abstract: A method of stabilizing electromagnetically charged particles, which includes coating electromagnetically charged particles with a protective layer; and etching the protective layer to produce a porous protective layer on the electromagnetically charged.

Abstract: A method of etching a pattern into a dielectric layer is provided. An organic planarization layer having a pattern is provided atop a dielectric layer. A cyclic fluorocarbon deposition step and plasma step is performed to etch the pattern into the dielectric layer. The energy for the plasma step is kept below the etch threshold of the dielectric layer.

Abstract: An apparatus to contain the reaction vessel in which gallium nitride crystals (henceforth referred to as bulk crystals) can be grown using the ammonothermal method at high pressure and temperature is disclosed. The apparatus provides adequate containment in all directions, which, for a typical cylindrical vessel, can be classified as radial and axial. Furthermore, depending on the specifics of the design parameters, the apparatus is capable of operating at a temperature up to 1,200 degrees Celsius, a pressure up to 2,000 MPa, and for whatever length of time is necessary to grow satisfactory bulk crystals. The radial constraint in the current disclosure is provided by using several stacked composite rings. The design of the apparatus is scalable to contain reaction volumes larger than 100 cubic centimeters.

Abstract: A resist underlayer film-forming composition including: (A) component: an isopoly or heteropoly acid, or a salt thereof, or a combination thereof; and (B) component: polysiloxan, poly hafnium oxide or zirconium oxide, or a combination thereof, wherein an amount of the (A) component is 0.1 to 85% by mass of a total amount of the (A) component and the (B) component; and polysiloxan is a hydrolysis-condensation product of hydrolyzable silane of Formula (1): R1aR2bSi(R3)4?(a+b)??Formula (1) and a hydrolyzable silane whose (a+b) is 0 is contained in a proportion of 60 to 85 mol % of a total hydrolyzable silane in Formula (1); the poly hafnium oxide is a hydrolysis-condensation product of hydrolyzable hafnium of Formula (2): Hf(R4)4??Formula (2) and the zirconium oxide is a hydrolysis-condensation product of hydrolyzable zirconium of Formula (3) or Formula (4): Zr(R5)4??Formula (3) ZrO(R6)2??Formula (4) or a hydrolysis-condensation product of a combination thereof.

Abstract: An apparatus for washing skin uses a brushless electric motor and a spring. The apparatus may include a case; an operation unit installed outside the case; a power supply unit installed at one end inside the case; the brushless electric motor installed inside the case; a control unit to output an electric signal; a face-washing brush fitted with a shaft of the brushless electric motor to be rotated forward and reverse as the brushless electric motor is operated; a holder and a spring.

Abstract: The present invention relates to a device for decontaminating surfaces such as a wall, a floor, or a ceiling of a building, or the like, having one or more toxic products, such as, asbestos, lead (Pb), PCBs (polychlorinated biphenyls), polycyclic aromatic hydrocarbons (PAHs), or radioactive products. The device includes at least one hydroblasting head fed by a high pressure unit and connected to a vacuum source comprising a low pressure source connected to a cyclone head mounted on a container which collects water containing toxic products and residues of the support. A filtration system having a filtering press is provided. The filtering press is fed with water containing toxic products collected in the container and whose output feeds a buffer tank wherein the water from the filtration comprises particles less than or equal to 5 ?m. Another objective of the invention concerns a method for decontaminating surfaces.

Abstract: A system for washing mechanical parts polluted with hydrocarbons is described, which includes a) a cleaning fluid; b) an enzymatic complex that catalyzes the oxidative degradation of hydrocarbons coating the mechanical parts, wherein said enzymatic complex is located within a filter cartridge; and, c) a washing sink. By using the described system, daily degradation efficiency from 250 to 500 g of transformed hydrocarbons in CO2 and H2O is achieved. Moreover, a method to perform washing of mechanical parts is described.

Abstract: A method of processing a substrate is provided. A substrate is placed on a turntable provided in a process chamber. The process chamber includes a process area for supplying an etching gas and a purge area for supplying a purge gas. The process area and the purge area are arranged along a rotational direction of the turntable and divided from each other. The etching gas is supplied into the process area. The purge gas is supplied into the purge area. The turntable rotates to cause the substrate placed on the turntable to pass through the process area and the purge area once per revolution, respectively. A film deposited on a surface of the substrate is etched when the substrate passes the process are. An etching rate of the etching or a surface roughness of the film is controlled by changing a rotational speed of the turntable.

Abstract: A BOP cleaning tool includes a first pipe section with a through central channel and radial channels to external fins, with nozzles for flushing fluid from the central channel out into a BOP bore for washing cavities in the BOP bore, the central channel provided with a flow control sleeve provided with holes, the flow control sleeve displaceable from a radially closed initial first closed position to a second position with the holes aligned with the inner radial channels for starting flushing through the nozzles, and further displaceable to a radially closed third position with the holes out of alignment with the inner radial channels for halting the flushing through the nozzles.