Abstract: A dishwasher appliance having a camera assembly. The dishwasher appliance is configured for obtaining an image of the door, determining the position of the door relative to a tub of the appliance; and using the position of the door in one or more dishwashing operations.

Abstract: A diverter valve for an appliance having water containing filamentous materials such as hair or string provides a low turbulence conduit (48) interconnecting an inlet (18) and multiple outlets (22a) reducing dead space and opportunities for filamentous materials to catch or collect. The conduit may be contained in a rotating spool (40) within a watertight housing (34) allowing simplified gasketing augmented by an ability to turn on and off waterflow separately, for example, with the valve or pump.

Abstract: The present invention provides a chemical solution, which demonstrates excellent etching performance for transition metal-containing substances and has excellent defect inhibition performance, a method for manufacturing the chemical solution, and a method for treating a substrate. The chemical solution according to an embodiment of the present invention includes one or more kinds of periodic acids selected from the group consisting of a periodic acid and a salt thereof, one or more kinds of first metal components selected from the group consisting of Ti and Zr, and water. In a case where the chemical solution includes one kind of first metal component, a content of the one kind of first metal component is 1 ppt by mass to 100 ppm by mass with respect to a total mass of the periodic acids.

Abstract: A method of reprocessing a surgical instrument includes converting force associated with a flow of fluid used during reprocessing of a surgical instrument to a drive force to drive an input drive member of a transmission mechanism of the instrument.

Abstract: The systems and methods discussed herein are for the fabrication of diffraction gratings, such as those gratings used in waveguide combiners. The waveguide combiners discussed herein are fabricated using nanoimprint lithography (NIL) of high-index and low-index materials in combination with and directional etching high-index and low-index materials. The waveguide combiners can be additionally or alternatively formed by the directional etching of transparent substrates. The waveguide combiners that include diffraction gratings discussed herein can be formed directly on permanent transparent substrates. In other examples, the diffraction gratings can be formed on temporary substrates and transferred to a permanent, transparent substrate.

Abstract: There is provided a technique that includes: processing a substrate in a process vessel by supplying a processing gas to the substrate and exhausting the processing gas from an exhaust part including an exhaust pipe and a pump; cleaning an interior of the exhaust part by supplying a first cleaning gas from a supply port installed in the exhaust pipe directly into the exhaust pipe; and cleaning an interior of the process vessel by supplying a second cleaning gas into the process vessel, wherein a frequency of performing the act of cleaning the interior of the exhaust part is set higher than a frequency of performing the act of cleaning the interior of the process vessel.

Abstract: A method includes performing a first post Chemical Mechanical Polish (CMP) cleaning on a wafer using a first brush. The first brush rotates to clean the wafer. The method further includes performing a second post-CMP cleaning on the wafer using a second brush. The second brush rotates to clean the wafer. The first post-CMP cleaning and the second post-CMP cleaning are performed simultaneously.

Abstract: A plasma purge method that is performed after dry cleaning in a process container and before applying a deposition process to a substrate includes: (a) activating and supplying a first process gas containing Cl2 in the process container; and (b) activating and supplying a second process gas containing H2 and O2 in the process container.

Abstract: The present disclosure provides a semiconductor structure and a method preparing it. After planarization of the Cu layer, a Si substrate is dry etched, so that a first height difference is configured in between the top surfaces of the the Si substrate and an insulating layer. By means of a wet etch process, Cu residues near an edge of a Cu post may be effectively removed. A second height difference is configured in between the top surfaces of the Cu post and the insulating layer. The first height difference is arranged to be greater than the second height difference. Channeling of Cu trace residues through the insulating layer are thereby avoided, effectively mitigating electrical leakage. Further, the Si substrate may be covered by a passivation layer, to prevent a conductive channel from being formed on the Si substrate, thereby further avoiding negative impact on the electrical properties of the device.

Abstract: Implementations of the present disclosure generally relate to the fabrication of integrated circuits. More particularly, the implementations described herein provide techniques for deposition of boron-carbon films on a substrate. In one implementation, a method of processing a substrate is provided. The method comprises flowing a hydrocarbon-containing gas mixture into a processing volume of a processing chamber having a substrate positioned therein, wherein the substrate is heated to a substrate temperature from about 400 degrees Celsius to about 700 degrees Celsius, flowing a boron-containing gas mixture into the processing volume and generating an RF plasma in the processing volume to deposit a boron-carbon film on the heated substrate, wherein the boron-carbon film has an elastic modulus of from about 200 to about 400 GPa and a stress from about ?100 MPa to about 100 MPa.

Abstract: A chemical mechanical polishing composition includes water, colloidal silica abrasive particles with a silica core containing a nitrogen species, a cerium compound coating including cerium oxide, cerium hydroxide or mixtures thereof, and a positive zeta potential, optionally an oxidizing agent, optionally a pH adjusting agent, optionally a biocide and optionally a surfactant. The chemical mechanical polishing composition has a pH of less than 7. Also described is a method of polishing a substrate containing silicon dioxide and a method of making the composite colloidal silica particles with the coating of cerium oxide, cerium hydroxide or mixtures thereof. The chemical mechanical polishing composition can be used to enhance the removal of silicon dioxide from a substrate in an acid environment.

Abstract: In certain embodiments, a workstation includes: a cleaning station configured to clean a die vessel, wherein the die vessel is configured to secure a semiconductor die; an inspection station configured to inspect the die vessel after cleaning to determine whether the die vessel is identified as passing inspection; and a conveyor configured to move the die vessel between the cleaning station and the inspection station.

Abstract: Methods for evaluating synergy of modification and removal operations for a wide variety of materials to determine process conditions for self-limiting etching by atomic layer etching are provided herein. Methods include determining the surface binding energy of the material, selecting a modification gas for the material where process conditions for modifying a surface of the material generate energy less than the modification energy and greater than the desorption energy, selecting a removal gas where process conditions for removing the modified surface generate energy greater than the desorption energy to remove the modified surface but less than the surface binding energy of the material to prevent sputtering, and calculating synergy to maximize the process window for atomic layer etching.

Abstract: A method for forming a semiconductor structure includes forming a hard mask layer over a target layer. The method also includes forming first mandrels over the hard mask layer. The method also includes forming a first opening in the first mandrels. The method also includes depositing a spacer layer over the hard mask layer and the first mandrels. The method also includes depositing a second mandrel material over the spacer layer. The method also includes planarizing the second mandrel material. The method also includes forming a second opening in the second mandrel material. The method also includes patterning and etching the second mandrel material to form second mandrels. The method also includes etching the spacer layer. The method also includes etching the hard mask layer and the target layer.

Abstract: A method for creating a three-dimensional (3D) mark in a protective coating including at least one of a TBC and a bond coating over a metal part, is provided. The method may include positioning a mask over the protective coating, the mask including an opening pattern therein; and performing an abrasive waterjet process on the protective coating using the mask. The abrasive waterjet erodes a first portion of the protective coating exposed through the first opening pattern to create the 3D mark. The mask is removed, leaving the 3D mark in the protective coating. The 3D mark only partially penetrates through the protective coating. A metal part may include a metal body, a protective coating over the metal body, and the 3D mark in the protective coating, is also provided. The 3D mark in the protective coating may include an opening having a width of between 30 and 300 micrometers.

Abstract: A nano-indent process for creating a single photon emitter in a two-dimensional materials platform comprising the steps of providing a substrate, providing a layer of polymer, providing a layer of two-dimensional material, utilizing a proximal probe, applying mechanical stress to the layer of two-dimensional material and to the layer of polymer, deforming the layer of two-dimensional material and the layer of polymer, and forming a nano-indent in the two-dimensional material. A single photon emitter in a two-dimensional materials platform comprising a substrate, a deformable polymer film, a two-dimensional material, and a nano-indent in the two-dimensional material.

Abstract: A gas ejection apparatus ejects gas by use of a compressor that compresses the gas, and the gas ejection apparatus includes a detector and a microcomputer. The detector detects a signal relating to an ejection target device. The microcomputer controls the compressor to change a number of times of ejection of the gas in accordance with an amount of time elapsing between a detection of the signal by the detector and a next detection of the signal by the detector.

Abstract: A method and safety device for a vehicle wash tunnel with a support structure with two parallel rails for the placement, by means of corresponding carriages, of the arms of an arch which incorporates a horizontal brush capable of linear movement along the arms of the arch and the rails. The safety device includes a rotation shaft, for fastening the arms of the arch to the carriages, and an extendable cylinder, spaced from the rotation shaft, which joins each carriage to the corresponding arch, such that the arch can rotate with respect to the carriages, and the extension of the extendable cylinder causes the rotation of the arch.

Abstract: An etchant composition includes an inorganic acid compound of about 8 wt % to about 15 wt %, a sulfonic acid compound of about 2.5 wt % to about 8 wt %, a sulfate compound of about 6 wt % to about 14 wt %, an organic acid compound of about 40 wt % to about 55 wt %, a metal or metal salt of about 0.01 wt % to about 0.06 wt %, and water.

Abstract: A method for manufacturing structured press elements comprises at least the following steps: the step of providing an element of metal; the step of providing a mask on a surface of the element for shielding portions of the surface; the step of treating non-shielded portions of the surface of the element; the step of removing the mask; wherein the method comprises at least a step in which the surface of the element is subjected to an ultrasonic treatment and/or that the step of providing the mask comprises at least a treatment with infrared radiation and/or that the step of chemically treating is performed with the surface directed downward.