Abstract: A method of detecting a ferroelectric signal from a ferroelectric film and a piezoelectric force microscopy (PFM) apparatus are provided. The method includes following steps. An input waveform signal is applied to the ferroelectric film. An atomic force microscope probe scans over a surface of the ferroelectric film to measure a surface topography of the ferroelectric film. A deflection of the atomic force microscope probe is detected when the input waveform signal is applied to the ferroelectric film to generate a deflection signal. Spectrum data of the ferroelectric film based on the deflection signal is generated. The spectrum data of the ferroelectric film is analyzed to determine whether the spectrum data of the ferroelectric film is a ferroelectric signal or a non-ferroelectric signal.

Abstract: Provided is a charged particle beam device capable of improving the accuracy of measurement and processing. The charged particle beam device includes an electrostatic chuck that adsorbs an inspection object, a voltage generation unit that generates a voltage to be supplied to the electrostatic chuck, and a state determination unit that determines a state of the inspection object.

Abstract: The invention provides a nano water ion group generator, including: at least a pair of P/N-type semiconductor dies including P-type semiconductor dies and N-type semiconductor dies, with one end being a cooling end and the other end being a heating end; a heat absorption member for obtaining a cold energy generated by the cooling end and transferring the cold energy to a blocking member; the blocking member for conducting the cold energy to obtain moisture in a condensed water or an air with high relative humidity; an ionizing member to absorb, collect or accumulate moisture in the condensed water or the air with high relative humidity, and be electrically coupled to the high voltage power supply for further ionizing the air and the moisture around the ionizing member under the action of avalanche effect to obtain at least one nanometer-sized substance among charged particles and oxygen-containing radicals.

Abstract: A sanitizer including a base that is at least one of flexible or foldable, and an ultraviolet (UV) light source configured to emit UV light and coupled to the base. The base of the sanitizer may be configured to be removably placed over a window of a vehicle such that UV light emitted from the sanitizer sanitizes surfaces within the interior of the vehicle and items placed within the vehicle. A sanitizer having a base that is movable from a deployed position in which it covers a storage compartment of a vehicle to an access position. A UV light source coupled to the base is configured to emit UV light. The UV light source is configured to emit UV light into the storage compartment when the base is in the deployed position.

Abstract: An apparatus comprising a beam emitter to emit a beam comprising electrons, ions or laser-light photons toward a target substrate. A motion sensor to detect mechanical vibrations of the target substrate. The motion sensor is mechanically coupled to the target substrate, a processor coupled to an output of the motion sensor. The processor is to generate a vibration correction signal proportional to the mechanical vibrations detected by the motion sensor, and beam steering optics coupled to the processor. The beam steering optics are to deflect the beam according to the vibration correction signal to compensate for the mechanical vibrations of the target substrate.

Abstract: A Procedural EBL system implements a user-provided oracle function (e.g., associated with a specific pattern) to generate control instructions for electron beam drive electronics in an on-demand basis. A control system may invoke the oracle function to query the pattern at individual point locations (e.g., individual x,y locations), and/or it may query the pattern over an area corresponding to a current field being addressed by the beam and stage positioner, for example. This Procedural EBL configuration manages control and pattern generation so that the low-level drive electronics and beam column may remain unchanged, allowing it to leverage existing EBL technologies.

Abstract: A lighting assembly includes a lightbulb, sleeve, motor assembly, a control circuit, power source, first state, and second state. The control circuit is communicatively coupled to the power source, the lightbulb, and the motor assembly. The lightbulb emits ultra violet (“UV”) radiation. The sleeve converts UV radiation to visible light, is circumferentially positioned about the lightbulb, and is rotatably coupled to the lightbulb via the motor assembly. The motor assembly is mechanically coupled to the sleeve, and selectively rotates the sleeve about the lightbulb and thereby positions the lighting assembly in the first state or the second state. The sleeve includes a slit that emits the UV radiation from the lightbulb. In the first state, the lighting assembly emits UV radiation towards a surface. In the second state, the lighting assembly emits visible light towards the surface.

Abstract: An example computer-implemented method for tuning a beam spot in a radiation therapy system based on radiation field measurements has been disclosed. The example method includes configuring an electron beam to generate a first beam spot on an electron-beam target of the radiation therapy system, determining a value for one or more radiation field quality metrics for a first radiation beam that originates from the first beam spot, and based on the value, determining whether the first radiation beam is outside a specified quality range.

Abstract: Methods and apparatus determine offcut angle of a crystalline sample using electron channeling patterns (ECPs), wherein backscattered electron intensity exhibits angular variation dependent on crystal orientation. A zone axis normal to a given crystal plane follows a circle as the sample is azimuthally rotated. On an ECP image presented with tilt angles as axes, the radius of the circle is the offcut angle of the sample. Large offcut angles are determined by a tilt technique that brings the zone axis into the ECP field of view. ECPs are produced with a scanning electron beam and a monolithic backscattered electron detector; or alternatively with a stationary electron beam and a pixelated electron backscatter diffraction detector. Applications include strain engineering, process monitoring, detecting spatial variations, and incoming wafer inspection. Methods are 40× faster than X-ray diffraction. 0.01-0.1° accuracy enables semiconductor applications.

Abstract: A quantum-dot-based measuring system is disclosed. The quantum-dot-based measuring system includes a laser to emit excitation light, an optical fiber probe including a tail end and a tapered tip, and the tapered tip of the optical fiber probe is attached with one or more quantum dots, and the excitation light is injected from the tail end of the optical fiber probe and emitted from the tapered tip to a sample to be detected, an objective lens to collect optical signal reflected by the sample and a spectrometer to receive the optical signal.

Abstract: The surface of the atomic force microscopy (AFM) cantilever is defined by a main cantilever body and an island. The island is partly separated from the main body by a separating space between facing edges of the main body and the island. At least one bridge connects the island to the main body, along a line around which the island is able to rotate through torsion of the at least one bridge. The island has a probe tip located on the island at a position offset from said line and a reflection area. In an AFM a light source directs light to the reflection area and a light spot position detector detects a displacement of a light spot formed from light reflected by the reflection area, for measuring an effect of forces exerted on the probe tip.

Abstract: Methods for confirming charged-particle generation in an instrument are provided. A method to confirm charged-particle generation in an instrument includes providing electrical connections to a charged-particle optics system of the instrument while the charged-particle optics system is in a chamber. The method includes coupling an electrical component having an impedance to charged-particle current generated in the chamber. Moreover, the method includes measuring an electrical response by the electrical component to the charged-particle current. Related instruments are also provided.

Abstract: The present document relates to a heterodyne scanning probe microscopy (SPM) method for subsurface imaging, and includes: applying an acoustic input signal to a sample and sensing an acoustic output signal using a probe. The acoustic input signal comprises a plurality of signal components at unique frequencies, including a carrier frequency and at least two excitation frequencies. The carrier frequency and the excitation frequencies form a group of frequencies, which are distributed with an equal difference frequency between each two subsequent frequencies of the group. The difference frequency is below a sensitivity threshold frequency of the cantilever for enabling sensing of the acoustic output signal. The document also describes an SPM system.

Abstract: An ion milling apparatus includes a pair of shielding members sandwiching a sample, and an ion source configured to irradiate the sample with an ion beam. The ion milling apparatus is configured to be capable of irradiating the sample with the ion beam in a first mode of irradiating the sample with the ion beam via one shielding member and in a second mode of irradiating the sample with the ion beam via the other shielding member.

Abstract: Provided is a machining technology to obtain a desired machining content while suppressing a possibility of causing a redeposition in a machining surface. The invention is directed to provide an ion milling device which includes an ion source which emits an ion beam, a sample holder which holds a sample, and a sample sliding mechanism which slides the sample holder in a direction including a normal direction of an axis of the ion beam.

Abstract: An electron beam apparatus is provided. The apparatus comprises an e-beam source configured to generate an electron beam, a first part configured to support a substrate, the first part comprising an object table for supporting the substrate, the first part further comprising a short stroke actuator system for actuating the object table relative to the e-beam source, the short stroke actuator system comprising a short stroke forcer. The apparatus further comprises a second part configured to movably support the first part and a long stroke actuator system configured to actuate movement of the first part with respect to the second part, the long stroke actuator system comprising a long stroke forcer, wherein the short stroke forcer and/or the long stroke forcer is configured to be switched off while the electron beam is projected onto the substrate.

Abstract: A method for enhancing vacuum tolerance of optical levitation particles includes steps of: (1) turning on a trapping laser to form an optical trap, loading the particles to an effective capture region of the optical trap, and collecting scattered light signals; (2) turning on the preheating laser, and directing a preheating laser beam to the captured particles; (3) adjusting a power of the preheating laser until a particle heating rate is larger than a heat dissipation rate; (4) turning on the vacuum pump, and stopping evacuating when a vacuum degree is greater than a vacuum inflection point of a first reduction of the effective capture region of the optical trap; and (5) turning off the preheating laser when the scattered light signals collected by the photodetector no longer changes. The present invention improves a stable capture probability of the particles in high vacuum environment.

Abstract: Described herein are a system and method of preparing integrated circuits (ICs) so that the ICs remain electrically active and can have their active circuitry probed for diagnostic and characterization purposes using charged particle beams. The system employs an infrared camera capable of looking through the silicon substrate of the ICs to image electrical circuits therein, a focused ion beam system that can both image the IC and selectively remove substrate material from the IC, a scanning electron microscope that can both image structures on the IC and measure voltage contrast signals from active circuits on the IC, and a means of extracting heat generated by the active IC. The method uses the system to identify the region of the IC to be probed, and to selectively remove all substrate material over the region to be probed using ion bombardment, and further identifies endpoint detection means of milling to the required depth so as to observe electrical states and waveforms on the active IC.

Abstract: Apparatus include a plurality of electrode arrangements spaced apart from each other opposite an ion propagation axis and defining an ion transfer channel that extends along the ion propagation axis that tapers between an input end that is situated to receive ions and an output end that is situated to couple the received ions to an input end of an ion guide. Methods include positioning a plurality of electrode arrangements at oblique angles opposite an ion propagation axis so as to form a ion transfer channel that tapers between an input end and an output end, and coupling the output end of the ion transfer channel to an input end of an ion optical element so as to direct ions in the ion transfer channel into the ion optical element. Related systems are also disclosed.

Abstract: The present disclosure provides a measuring method for measuring heat distribution of a specific space using an SThM probe, and a method and device for detecting a beam spot of a light source. The method according to an embodiment of the present disclosure is the measuring method for measuring heat distribution of a specific space, the measuring method includes: linearly moving a SThM probe that may measure a temperature change in the specific space; and calculating heat distribution of the specific space using continuous temperature change values obtained from the SThM probe during the moving step. According to the measuring method, and the method and device for detecting a beam spot of a light source, it is possible to map temperature distribution in a small space using a SThM probe and it is possible to accurately detect a beam spot using the temperature distribution.