Abstract: ALD and p-CVD methods to generate MgB2 and MgB2-containing films in the growth temperature range of 250-300° C. The thermal ALD and p-CVD methods shown herein ensure that the high-temperature-induced roughening, which causes high surface resistances in MgB2 coatings grown by the mentioned conventional techniques, is avoided. The MgB2 and MgB2-containing films exhibit superconductive properties at above 20° K.

Abstract: The present disclosure provides an interference filter, a lithography system incorporating an interference filter, and a method of fabricating an interference filter. The interference filter includes a transparent substrate having a front surface and a back surface, a plurality of alternating material layers formed over the front surface of the transparent substrate that form a bandpass filter, and an anti-reflective structure formed over the back surface of the transparent substrate. The alternating material layers alternate between a relatively high refractive index material and a relatively low refractive index material.

Abstract: Molybdenum(0) and coordination complexes are described. Methods for depositing molybdenum-containing films on a substrate are described. The substrate is exposed to a molybdenum precursor and a reactant to form the molybdenum-containing film (e.g., elemental molybdenum, molybdenum oxide, molybdenum carbide, molybdenum silicide, molybdenum disulfide, molybdenum nitride). The exposures can be sequential or simultaneous.

Abstract: The present application discloses forming self-assembled monolayers (SAMs) by exposing the substrate at least twice to SAM precursors with intervening cooling of a substrate.

Abstract: A method for forming a layer comprising SiOCN on a substrate is disclosed. An exemplary method includes thermally depositing the layer comprising SiOCN on a surface of the substrate. The layer comprising SiOCN can be used for various applications, including spacers, etch stop layers, and etch resistant layers.

Abstract: Passivation layers to inhibit vapor deposition can be used on reactor surfaces to minimize deposits while depositing on a substrate housed therein, or on particular substrate surfaces, such as metallic surfaces on semiconductor substrates to facilitate selective deposition on adjacent dielectric surfaces. Passivation agents that are smaller than typical self-assembled monolayer precursors can have hydrophobic or non-reactive ends and facilitate more dense passivation layers more quickly than self-assembled monolayers, particularly over complex three-dimensional structures.

Abstract: A deposition apparatus (20) comprising: a chamber (22); a process gas source (62) coupled to the chamber; a vacuum pump (52) coupled to the chamber; at least two electron guns (26); one or more power supplies (30) coupled to the electron guns; a plurality of crucibles (32,33,34) positioned or positionable in an operative position within a field of view of at least one said electron gun; and a part holder (170) having at least one operative position for holding parts spaced above the crucibles by a standoff height H. The standoff height H is adjustable in a range including at least 22 inches.

Abstract: Process for manufacturing a composite nuclear component comprising i) a support containing a substrate comprising a metallic material and a ceramic material (1), the substrate (1) being coated or not coated with an interposed layer (3) positioned between the substrate (1) and at least one protective layer (2) and ii) the protective layer (2) composed of a protective material comprising chromium; the process comprising a step a) of vaporizing a mother solution followed by a step b) of depositing the protective layer (2) onto the support via a DLI-MOCVD deposition process.

Abstract: Methods of forming a metal oxyfluoride films are provided. A substrate is placed in an atomic layer deposition (ALD) chamber having a processing region. Flows of zirconium-containing gas, a zirconium precursor gas, for example, Tris(dimethylamino)cyclopentadienyl zirconium, an oxygen-containing gas, a fluorine containing gas, and an yttrium precursor, for example, tris(butylcyclopentadienyl)yttrium gas are delivered to the processing region, where a metal oxyfluoride film such as an yttrium zirconium oxyfluoride film, is formed.

Abstract: A non-conformal, highly selective liner for etch methods in semiconductor devices is described. A method comprises forming a film stack on a substrate; etching the film stack to form an opening; depositing a non-conformal liner in the opening; etching the non-conformal liner from the bottom of the opening; and selectively etching the film stack relative to the non-conformal liner to form a logic or memory hole. The non-conformal liner comprises one or more of boron, carbon, or nitrogen.

Abstract: A method of manufacturing a thin film optical apparatus includes providing a substrate and applying an alignment layer over the substrate. The alignment layer ranges from about 50 to 100 nm in thickness. The method includes imprinting a hologram with a desired optic pattern onto the alignment layer and applying at least one layer of mesogen material over the alignment layer.

Abstract: Organosilicon chemistry, polymer derived ceramic materials, and methods. Such materials and methods for making polysilocarb (SiOC) and Silicon Carbide (SiC) materials having 3-nines, 4-nines, 6-nines and greater purity. Vapor deposition processes and articles formed by those processes utilizing such high purity SiOC and SiC.

Abstract: A method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process is disclosed. The method may include: contacting the substrate with a first vapor phase reactant comprising a metalorganic precursor, the metalorganic precursor comprising a metal selected from the group consisting of platinum, aluminum, titanium, bismuth, zinc, and combination thereof. The method may also include; contacting the substrate with a second vapor phase reactant comprising ruthenium tetroxide, wherein the ruthenium-containing film comprises at least one of a ruthenium-platinum alloy, or a ternary ruthenium oxide. Device structures including a ruthenium-containing film deposited by the methods of the disclosure are also disclosed.

Abstract: Disclosed is an ALD device in which a shower head is disposed at a position opposed to a film formation surface of a target workpiece in a chamber and has raw material gas ejection ports and OH* forming gas ejection ports alternately arranged at predetermined intervals in two film-formation-surface directions so as to face the film formation surface. The OH* forming gas ejection ports respectively include first ejection ports for ozone gas ejection and second ejection ports for unsaturated hydrocarbon gas ejection. An oxide film is formed on the film formation surface by ejecting a raw material gas from the raw material gas ejection ports and ejecting an ozone gas and an unsaturated hydrocarbon gas from the first and second ejection ports of the OH* forming gas ejection ports, respectively, while moving the target workpiece along the two film-formation-surface directions.

Abstract: A substrate processing method capable of improving thin film uniformity on a substrate by controlling the position of a substrate supporting apparatus includes: a first operation of moving the substrate supporting apparatus in a first direction by a first predetermined distance; a second operation of moving the substrate supporting apparatus in a second direction by a second predetermined distance; a third operation of moving the substrate supporting apparatus in the second direction by the first predetermined distance; and a fourth operation of moving the substrate supporting apparatus in the first direction by the second predetermined distance, wherein the second direction may be opposite to the first direction.

Abstract: Methods and apparatus for depositing a coating on a semiconductor manufacturing apparatus component are provided herein. In some embodiments, a method of depositing a coating on a semiconductor manufacturing apparatus component includes: sequentially exposing a semiconductor manufacturing apparatus component including nickel or nickel alloy to an aluminum precursor and a reactant to form an aluminum containing layer on a surface of the semiconductor manufacturing apparatus component by a deposition process.

Abstract: There is provided a heat treatment apparatus for performing a predetermined film forming process on a substrate by mounting the substrate on a surface of a rotary table installed in a processing vessel and heating the substrate by a heating part while rotating the rotary table. The heat treatment apparatus includes: a first temperature measuring part of a contact-type configured to measure a temperature of the heating part; a second temperature measuring part of a non-contact type configured to measure a temperature of the substrate mounted on the rotary table in a state where the rotary table is being rotated; and a temperature control part configured to control the heating part based on a first measurement value measured by the first temperature measuring part and a second measurement value measured by the second temperature measuring part.

Abstract: When a titanium-containing gas and an oxidizing gas, or a silicon-containing gas and a nitriding gas, are alternately supplied from a gas supplier and radio frequency power is supplied to each of a first electrode and a second electrode from a power supply, parallel to the supply of the oxidizing gas or the nitriding gas, so as to generate plasma and to perform a film formation, a magnitude of the radio frequency power to be supplied to each of the first electrode and the second electrode is controlled.

Abstract: Methods and apparatus for vapor deposition of an organic film are configured to vaporize an organic reactant at a first temperature, transport the vapor to a reaction chamber housing a substrate, and maintain the substrate at a lower temperature than the vaporization temperature. Alternating contact of the substrate with the organic reactant and a second reactant in a sequential deposition sequence can result in bottom-up filling of voids and trenches with organic film in a manner otherwise difficult to achieve.

Abstract: A method for depositing a film comprising silicon and oxygen onto a substrate includes (a) providing a substrate in a reactor; (b) introducing into the reactor at least one silicon precursor compound selected from the group consisting of Formulae A, B, and C as described herein, (c) purging the reactor with a purge gas; (d) introducing at least one of an oxygen-containing source and a nitrogen-containing source into the reactor; and (e) purging the reactor with the purge gas, wherein the steps b through e are repeated until a desired thickness of resulting silicon-containing film is deposited; and (f) treating the resulting silicon-containing film with R3xSi(NR1R2)4-x wherein R1-3 are the same as aforementioned, preferably methyl or ethyl; and x=1, 2, or 3; and wherein the method is conducted at one or more temperatures ranging from about 20° C. to 300° C.